Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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10/27/1993 | EP0566886A1 Method of producing diffraction grating |
10/27/1993 | EP0566872A2 A thermally enhanced semiconductor device and method for making the same |
10/27/1993 | EP0566838A2 Manufacturing method of thin film transistor |
10/27/1993 | EP0566739A1 Semiconductor device |
10/27/1993 | EP0566591A1 Semiconductor device. |
10/27/1993 | EP0566585A1 Storage cell arrangement and process for operating it. |
10/27/1993 | EP0506710A4 Process enhancement using molybdenum plugs in fabricating integrated circuits |
10/27/1993 | EP0448713B1 Semiconductor device |
10/27/1993 | EP0286690B1 Aluminum nitride and semiconductor substrate formed therefrom |
10/27/1993 | CN1077800A Time constant detecting circuit and time constant adjusting circuit |
10/27/1993 | CN1022595C Sintering technology for bidirectional thyristor |
10/26/1993 | US5257325 Electronic parallel raster dual image registration device |
10/26/1993 | US5257231 Semicustom-made integrated circuit with built-in memory unit associated with internal timing generator for internal write enable signal |
10/26/1993 | US5257230 Memory device including redundancy cells with programmable fuel elements and process of manufacturing the same |
10/26/1993 | US5257224 Semiconductor device with multiple layers of memory cell arrays |
10/26/1993 | US5257095 Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
10/26/1993 | US5256903 Plastic encapsulated semiconductor device |
10/26/1993 | US5256898 Semiconductor device with a different epitaxial thickness between adjacent circuit regions |
10/26/1993 | US5256896 Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor |
10/26/1993 | US5256895 Pad oxide protect sealed interface isolation |
10/26/1993 | US5256894 Semiconductor device having variable impurity concentration polysilicon layer |
10/26/1993 | US5256888 Transistor device apparatus employing free-space electron emission from a diamond material surface |
10/26/1993 | US5256881 Mask and charged particle beam exposure method using the mask |
10/26/1993 | US5256599 Stress relieving |
10/26/1993 | US5256597 Self-aligned conducting etch stop for interconnect patterning |
10/26/1993 | US5256595 Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor |
10/26/1993 | US5256594 Masking technique for depositing gallium arsenide on silicon |
10/26/1993 | US5256593 Masking with photoresist |
10/26/1993 | US5256592 Method for fabricating a semiconductor integrated circuit device |
10/26/1993 | US5256591 Method for forming isolation region in semiconductor device using trench |
10/26/1993 | US5256589 Method of improving the flatness of wiring layer |
10/26/1993 | US5256588 Method for forming a transistor and a capacitor for use in a vertically stacked dynamic random access memory cell |
10/26/1993 | US5256587 Hemisphere particles used as mask pattern |
10/26/1993 | US5256586 Gate-to-drain overlapped MOS transistor fabrication process |
10/26/1993 | US5256585 Process for fabricating a gate-drain overlapped semiconductor |
10/26/1993 | US5256584 Stacking conductors and nonconductors |
10/26/1993 | US5256583 Mask surrogate semiconductor process with polysilicon gate protection |
10/26/1993 | US5256581 Silicon film with improved thickness control |
10/26/1993 | US5256580 Controlled etching of T-shaped contactor |
10/26/1993 | US5256579 Varing doping profile between anode and cathode |
10/26/1993 | US5256578 Integral semiconductor wafer map recording |
10/26/1993 | US5256577 Process for determining the position of a p-n transition |
10/26/1993 | US5256576 Radio frequency deposited buffer |
10/26/1993 | US5256566 Low pressure vapor deposition |
10/26/1993 | US5256565 Electrochemical planarization |
10/26/1993 | US5256564 Method for manufacturing semiconductor device having a contact structure |
10/26/1993 | US5256563 Heating, nitriding to diffuse dopants |
10/26/1993 | US5256562 Array of thin film transistors on silicon substrate; cutting, tilting to transfer module body |
10/26/1993 | US5256550 Fabricating a semiconductor device with strained Si1-x Gex layer |
10/26/1993 | US5256517 Positive-working radiation-sensitive mixture and recording material for exposure to UV radiation containing polyfunctional compound having α-β-keto ester units and sulfonate units |
10/26/1993 | US5256455 Method of forming film of tantalum oxide by plasma chemical vapor deposition |
10/26/1993 | US5256454 Method for suppression of electrification |
10/26/1993 | US5256274 Depositing electroconductive layer on wafer, masking, selectively depositing metal onto conducting layer, removing masking, etching |
10/26/1993 | US5256248 Method for patterning semiconductor |
10/26/1993 | US5256247 Liquid etchant composition for thin film resistor element |
10/26/1993 | US5256245 Scavenging oxygen released from etching silicon oxide layer |
10/26/1993 | US5256204 Single semiconductor water transfer method and manufacturing system |
10/26/1993 | US5256162 Apparatus for forming shallow electrical junctions |
10/26/1993 | US5255797 Wafer carrier with wafer retaining cushions |
10/26/1993 | US5255783 Evacuated wafer container |
10/26/1993 | US5255431 Method of using frozen epoxy for placing pin-mounted components in a circuit module |
10/26/1993 | US5255430 Method of assembling a module for a smart card |
10/26/1993 | CA2014821C Semiconductor integrated circuit device |
10/26/1993 | CA1323529C Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia |
10/26/1993 | CA1323528C Method for preparation of multi-layer structure film |
10/23/1993 | CA2094522A1 Liquid crystal display device |
10/21/1993 | DE4312468A1 Dynamic random access memory cell - has insulating film on word-line, covered by conductive layer, insulating layer and bit-line formed on insulating layer |
10/21/1993 | DE4312324A1 Processing semiconductor, pref. capacitor - forming electrical connection with poly:silicon, forming layers of two materials, polishing and then etching |
10/21/1993 | DE4312239A1 Charge pump circuit for insulated gate MOS semiconductor memory - has transistor responsive to clock pulse signal applied by capacitor and rectifier comprising different conductivity type or conductivity mechanism |
10/21/1993 | DE4311763A1 Process parameter adjusting in semiconductor prodn. - inputting several process parameters and calculating impurity concentration for semiconductor |
10/21/1993 | DE4311761A1 Silicon nitride anti-reflection film prodn. for use in photolithographic steps of semiconductor device mfr. - by selecting optical characteristic of film, by determining values of real and imaginary parts of specified relationship |
10/21/1993 | DE4310955A1 Processing semiconductor wafer with increased switching density - by forming wafer with conducting zones, applying dielectric insulating layer, forming contact openings, and etching |
10/20/1993 | EP0566306A2 Semiconductor memory device |
10/20/1993 | EP0566286A1 Photoresist stripping method |
10/20/1993 | EP0566271A2 Wear-resistant transparent dielectric coatings |
10/20/1993 | EP0566262A2 Field effect transistor with a deep P body contacted by the source electrode |
10/20/1993 | EP0566258A1 Improved slurry polisher using ultrasonic agitation |
10/20/1993 | EP0566253A1 Method for forming contact structures in integrated circuits |
10/20/1993 | EP0566220A2 Magnetic field enhanced plasma etch reactor |
10/20/1993 | EP0566218A2 Method for finding a preferred spot for a laser beam of a laser beam interferometer and laser interferometer apparatus |
10/20/1993 | EP0566217A2 Method and apparatus for focussing a beam of radiant energy |
10/20/1993 | EP0566187A2 Non-volatile trench memory device and self-aligned method for making such a device |
10/20/1993 | EP0566186A2 Power integrated circuit with latch-up prevention |
10/20/1993 | EP0566179A1 A semiconductor component including protection means |
10/20/1993 | EP0566129A1 Charge transfer apparatus |
10/20/1993 | EP0566117A1 charge transfer image pick-up device |
10/20/1993 | EP0566112A2 Hetero bipolar transistor and method of manufacturing the same |
10/20/1993 | EP0566040A2 Process for selectively depositing copper aluminum alloy onto a substrate |
10/20/1993 | EP0565936A1 Semiconductor well structure and method |
10/20/1993 | EP0565901A1 Control and moderation of aluminum in silicon using germanium and germanium with boron |
10/20/1993 | EP0565807A1 MOS power transistor device |
10/20/1993 | EP0565784A1 Method of manufacturing X-ray exposure mask |
10/20/1993 | EP0565781A1 Ejecting device for separating a chip from an adhesive tape |
10/20/1993 | EP0565724A1 Apparatus for forming thin film |
10/20/1993 | EP0565588A1 Single crystal silicon arrayed devices for display panels |
10/20/1993 | EP0565521A1 Improved drying apparatus |
10/20/1993 | EP0495035A4 Method of applying metallized contacts to a solar cell |
10/20/1993 | CN1077569A Method for local compensating the collecting zone by ion implantation |
10/20/1993 | CN1022526C Etch process for silicon deep groove |
10/19/1993 | US5255279 Gallium arsenide substrate; double hetero structure of aluminum gallium indium phosphide crystals; etch stop layer; absorption layer; electrode |