| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 03/01/1994 | US5290729 Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof |
| 03/01/1994 | US5290728 Method for producing a semiconductor device |
| 03/01/1994 | US5290727 Method for suppressing charge loss in EEPROMs/EPROMS and instabilities in SRAM load resistors |
| 03/01/1994 | US5290726 DRAM cells having stacked capacitors of fin structures and method of making thereof |
| 03/01/1994 | US5290725 Semiconductor memory device and a method for producing the same |
| 03/01/1994 | US5290724 Method of forming an electrostatic discharge protection circuit |
| 03/01/1994 | US5290723 Method of manufacturing a nonvolatile semiconductor memory |
| 03/01/1994 | US5290721 Depositing gate oxide film, electroconductive layer as float-ing gate, patterning, oxidation, forming second electrocon-ductive layer, etching |
| 03/01/1994 | US5290720 Transistor with inverse silicide T-gate structure |
| 03/01/1994 | US5290719 Method of making complementary heterostructure field effect transistors |
| 03/01/1994 | US5290718 Simplified high reliability gate oxide process |
| 03/01/1994 | US5290717 Method of manufacturing semiconductor devices having a resist patern coincident with gate electrode |
| 03/01/1994 | US5290716 Method of manufacturing semiconductor devices |
| 03/01/1994 | US5290715 Method of making dielectrically isolated metal base transistors and permeable base transistors |
| 03/01/1994 | US5290714 Method of forming semiconductor device including a CMOS structure having double-doped channel regions |
| 03/01/1994 | US5290713 Process of manufacturing a semiconductor device by using a photoresist mask which does not encircle an area of implanted ions |
| 03/01/1994 | US5290712 Implanting ions of element of amorphous semiconductor film in film except a fine region therein, heat treating film at temperature not higher than its melting point to generate crystal nucleus in fine region, crystal growth at nucleus |
| 03/01/1994 | US5290711 Method for fabricating semiconductor devices which lessens the effect of electrostatic discharge |
| 03/01/1994 | US5290710 Method for testing integrated circuits on a carrier substrate |
| 03/01/1994 | US5290709 Method of manufacturing semiconductor device |
| 03/01/1994 | US5290664 Method for preparing electrode for semiconductor device |
| 03/01/1994 | US5290658 Positive type photoresist composition comprising polyaromatic hydroxy quinone diazide esters as the photosensitive ingredient |
| 03/01/1994 | US5290657 Improved sensitivity while maintaining heat resistance and film thickness retention |
| 03/01/1994 | US5290609 Method of forming dielectric film for semiconductor devices |
| 03/01/1994 | US5290588 Titanium, tungsten alloys |
| 03/01/1994 | US5290423 Electrochemical interconnection |
| 03/01/1994 | US5290399 Surface planarizing methods for integrated circuit devices |
| 03/01/1994 | US5290397 Multilayer photoresists on substrates from images on silicon diene-styrene copolymers, masking and etching |
| 03/01/1994 | US5290396 Trench planarization techniques |
| 03/01/1994 | US5290394 Method of manufacturing a thin Hg1-x Cdx Te film |
| 03/01/1994 | US5290393 Crystal growth method for gallium nitride-based compound semiconductor |
| 03/01/1994 | US5290384 Apparatus for controlled spray etching |
| 03/01/1994 | US5290383 Plasma-process system with improved end-point detecting scheme |
| 03/01/1994 | US5290382 Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
| 03/01/1994 | US5290381 Plasma etching apparatus |
| 03/01/1994 | US5290361 Surface treating cleaning method |
| 03/01/1994 | US5290358 System for controlling thickness profile of deposited thin film layers over three-dimensional topography: gaseous reactant beam provision, beam collimation, specific angle of incidence of beam, reaction probability of beam with surface |
| 03/01/1994 | US5290354 Coatings for microelectronic devices and substrates |
| 03/01/1994 | US5290197 Method for mounting a wiring board on a liquid crystal display substrate |
| 03/01/1994 | US5290134 Pick and place for automatic test handler |
| 03/01/1994 | US5290081 Chip mounter |
| 03/01/1994 | US5289639 Fluid treatment apparatus and method |
| 03/01/1994 | US5289632 Applying conductive lines to integrated circuits |
| 03/01/1994 | US5289631 Method for testing, burn-in, and/or programming of integrated circuit chips |
| 03/01/1994 | CA2104487A1 Hermetic protection for integrated circuits |
| 03/01/1994 | CA2104484A1 Hermetic protection for integrated circuits |
| 03/01/1994 | CA2104340A1 Hermetic protection for integrated circuits |
| 03/01/1994 | CA2097791A1 High aspect ratio, flexible thick film positive photoresist |
| 03/01/1994 | CA1327338C Process for producing devices containing silicon nitride films |
| 02/24/1994 | DE4328111A1 Prodn. of mask ROMs - by forming gate oxide film, gate electrode, and source and drain regions on semiconductor substrate |
| 02/24/1994 | DE4327662A1 Fine, highly accurate resist pattern prodn. using positive photoresist - contg. naphtho-quinone-di:azide and novolak resin with alkaline coating, pref. contrast enhancing or antireflective coating |
| 02/24/1994 | DE4327660A1 Configurable integrated circuit mfg. device, e.g. for field programmable gate array - uses logic function determination data to load required logic function configuration via data input terminals |
| 02/24/1994 | DE4325331A1 Gallium arsenide phosphide epitaxial disc - having layer system of gallium arsenide phosphide and used to mfr. light emitting diodes |
| 02/24/1994 | DE4227237A1 Microstructuring substrate surface - by casting shadow of beam of atom agglomerates onto surface |
| 02/23/1994 | EP0584030A1 Process for the abatement of propylene carbonate emissions |
| 02/23/1994 | EP0584028A1 As-deposited large grain aluminium |
| 02/23/1994 | EP0583997A1 Topographical selective patterns |
| 02/23/1994 | EP0583974A1 Diamond temperature and radiation sensor |
| 02/23/1994 | EP0583942A2 Phase-shifting lithographic masks having phase-shifting layers of differing compositions |
| 02/23/1994 | EP0583911A1 MOS transistor channel structure |
| 02/23/1994 | EP0583897A2 Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
| 02/23/1994 | EP0583877A1 Improved semiconductor bond pad structure and method |
| 02/23/1994 | EP0583876A2 Planar contact with a void |
| 02/23/1994 | EP0583866A1 Void free oxide fill for interconnect spaces |
| 02/23/1994 | EP0583784A2 Apparatus and method for interlevel dielectric planarization |
| 02/23/1994 | EP0583678A2 Process to create surface pattern and applications thereof |
| 02/23/1994 | EP0583625A2 Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of I/O area to active area per die |
| 02/23/1994 | EP0583585A2 Individually powering-up unsingulated dies on a wafer |
| 02/23/1994 | EP0583374A1 Method and apparatus for plasma deposition |
| 02/23/1994 | EP0404760B1 Semiconductor component with two connections and process and device for manufacturing it |
| 02/23/1994 | CN1082770A Electronic devices having metallurgies containing copper-semiconductor compounds |
| 02/23/1994 | CN1082769A Realization of SI/n+ buried tayer structure and element internal interconnection by high energy ion injection |
| 02/23/1994 | CN1082725A A method for forming a patterned polyimide coating film on a substrate |
| 02/23/1994 | CN1082567A A polymeric substrate containing polymeric microelements and methods of making and using the same |
| 02/23/1994 | CN1082541A Fluoro taxols |
| 02/22/1994 | US5289422 Semiconductor device having dummy wiring pattern therein and manufacturing method thereof |
| 02/22/1994 | US5289421 Dynamic random access memory with low noise characteristics |
| 02/22/1994 | US5289416 Semiconductor integrated device and wiring correction arrangement therefor |
| 02/22/1994 | US5289411 Floating gate memory array device having improved immunity to write disturbance |
| 02/22/1994 | US5289405 Semiconductor memory circuit device having memory cells constructed on a Bicmos gate array |
| 02/22/1994 | US5289384 Device simulator for semiconductor device |
| 02/22/1994 | US5289312 Catadioptric reduction projection optical system |
| 02/22/1994 | US5289260 Pattern defect detection device and a spatial frequency filter used therein |
| 02/22/1994 | US5289043 Switching system for selectively enabling electrical power to be applied to plural loads |
| 02/22/1994 | US5289039 Resin encapsulated semiconductor device |
| 02/22/1994 | US5289038 Bump electrode structure and semiconductor chip having the same |
| 02/22/1994 | US5289037 Conductor track configuration for very large-scale integrated circuits |
| 02/22/1994 | US5289035 Containign titanium nitride |
| 02/22/1994 | US5289033 Packaging of semiconductor chips with resin |
| 02/22/1994 | US5289032 Tape automated bonding(tab)semiconductor device and method for making the same |
| 02/22/1994 | US5289031 Silicon oxide and/or silicon nitride barrier layer for heavy metals |
| 02/22/1994 | US5289030 Semiconductor device with oxide layer |
| 02/22/1994 | US5289029 Semiconductor integrated circuit device having wells biased with different voltage levels |
| 02/22/1994 | US5289028 High power semiconductor device with integral on-state voltage detection structure |
| 02/22/1994 | US5289026 Array of electrically erasable non-volatile memory devices |
| 02/22/1994 | US5289025 Integrated circuit having a boosted node |
| 02/22/1994 | US5289024 Bipolar transistor with diffusion compensation |
| 02/22/1994 | US5289022 CCD shift register having a plurality of storage regions and transfer regions therein |
| 02/22/1994 | US5289021 Basic cell architecture for mask programmable gate array with 3 or more size transistors |
| 02/22/1994 | US5289020 Heterojunction bipolar transistor |