Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/1994
02/02/1994EP0581438A2 Etching a diamond body with a molten or partially molten metal
02/02/1994EP0581424A1 A wafer chamfer polishing apparatus with rotary circular dividing table
02/02/1994EP0581369A1 Method of manufacturing a semiconductor device with a heterojunction manufactured by implantation with a carbon-halogen compound
02/02/1994EP0581350A1 Slurry containment device for polishing semiconductor wafers
02/02/1994EP0581312A1 Non-volatile memory device and method of its manufacture
02/02/1994EP0581305A2 Field-effect transistor and method for fabricating the same
02/02/1994EP0581302A2 Method for fabricating photomasks having a phase shift layer
02/02/1994EP0581294A2 Process for producing a circuit substrate
02/02/1994EP0581284A2 Non-contact IC card and manufacturing and testing methods of the same
02/02/1994EP0581280A2 Pattern forming method
02/02/1994EP0581152A2 Multichip module and its manufacturing method
02/02/1994EP0581085A1 Radiation hardened CMOS structure using an implanted P guard structure and method for the manufacture thereof
02/02/1994EP0580987A1 Semiconductor device having a flag with opening
02/02/1994EP0580980A1 A method for vapor drying
02/02/1994EP0580953A1 GaP light emitting device and method for fabricating the same
02/02/1994EP0580927A1 Operational amplifier
02/02/1994EP0580921A1 Control of saturation of integrated bipolar transistors
02/02/1994EP0580895A2 Method of mapping a tested semiconductor device
02/02/1994EP0580880A1 Control of anisotropic silicon etching utilizing a selected catalyzed etchant
02/02/1994EP0580618A1 Electroluminescent silicon device.
02/02/1994CN1023675C Method for mfg. semiconductor device
02/01/1994USH1287 Ion implanted diamond metal-insulator-semiconductor field effect transistor
02/01/1994US5283746 Manufacturing adjustment during article fabrication
02/01/1994US5283717 Circuit assembly having interposer lead frame
02/01/1994US5283468 Electric circuit apparatus
02/01/1994US5283456 Vertical gate transistor with low temperature epitaxial channel
02/01/1994US5283455 Thin film field effect element having an LDD structure
02/01/1994US5283454 Semiconductor device including very low sheet resistivity buried layer
02/01/1994US5283453 Trench sidewall structure
02/01/1994US5283448 MESFET with indium gallium arsenide etch stop
02/01/1994US5283324 Process for preparing radiation sensitive compound and positive resist composition
02/01/1994US5283209 Deposition of photoresist on dielectric layer, forming window by selective ablation of resin
02/01/1994US5283208 Method of making a submicrometer local structure using an organic mandrel
02/01/1994US5283206 Migrate germanium particle reacts with copper to form a compound
02/01/1994US5283205 Method for manufacturing a semiconductor device on a substrate having an anisotropic expansion/contraction characteristic
02/01/1994US5283204 Method of forming passivation oxidation for improving cell leakage and cell area
02/01/1994US5283203 Self-aligned contact process for complementary field-effect integrated circuits
02/01/1994US5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
02/01/1994US5283201 High density power device fabrication process
02/01/1994US5283200 Boron doping in entire surface of substrate for adjusting threshold voltage after annealing impurities
02/01/1994US5283141 Photolithography control system and method using latent image measurements
02/01/1994US5283104 Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
02/01/1994US5283081 Applying photoresist to multilayer ceramic substrate, exposing to light, developing to form mask pattern, plating; printing with photosetting paste for dielectric, drying, forming via hole pattern, burying and sintering conductor paste in holes
02/01/1994US5282926 Method of anisotropically etching monocrystalline, disk-shaped wafers
02/01/1994US5282925 Controlling surface residence time, thickness and composition of reactant containing film
02/01/1994US5282924 Containing cantilever beam
02/01/1994US5282923 Liquid agitation and purification system
02/01/1994US5282922 Applying layer of material resistant to fluorine ion etching over silicon substrate surface
02/01/1994US5282921 Apparatus and method for optimally scanning a two-dimensional surface of one or more objects
02/01/1994US5282903 Reactive deposition of material in presence of oxidizing gas; stable, defect-free, no oxidation of substrate
02/01/1994US5282899 Apparatus for the production of a dissociated atomic particle flow
02/01/1994US5282565 Solder bump interconnection formed using spaced solder deposit and consumable path
02/01/1994US5282312 Multi-layer circuit construction methods with customization features
02/01/1994US5282289 Scrubber apparatus for cleaning a thin disk work
02/01/1994CA2099788A1 Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
02/01/1994CA2020246C Tapered semiconductor waveguides and method of making same
02/01/1994CA1326624C Liquid-phase-epitaxy deposition method in the manufacture of devices
01/1994
01/31/1994CA2101125A1 Field-effect transistor and method for fabricating the same
01/27/1994DE4324325A1 Optical component mfr. by reactive etching - of metal oxide dielectric, esp. tantalum or hafnium oxide
01/27/1994DE4324207A1 Semiconductor test system for checking integrated circuit - synchronises test device and optical-beam-induced-current measurement device and evaluates IC and OBIC output signals
01/27/1994DE4309005A1 Multilayer hybrid integrated circuit mfr. from ceramic green sheets - providing contacts between conductive tracks via feedthrough(s) in holes through interposed ceramic plate which prevents shrinkage
01/27/1994DE4224686A1 Method for implantation of ions into a solid body - comprises passing ions through an energy absorbent layer before implantation
01/27/1994DE4219774C1 Verfahren und Vorrichtung zum Stapeln von Substraten, die durch Bonden miteinander zu verbinden sind Method and device for stacking substrates, to be connected to each other by bonding
01/26/1994EP0580467A2 Segmented column memory array
01/26/1994EP0580452A1 Field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
01/26/1994EP0580410A2 Reusable fixture for carrier tape
01/26/1994EP0580408A1 Excimer laser processing method and apparatus
01/26/1994EP0580381A1 Sealing porous electronic substrates
01/26/1994EP0580318A1 Sub-micron device fabrication using multiple aperture filter
01/26/1994EP0580290A1 Self-aligned method of fabricating closely spaced apart metallization lines
01/26/1994EP0580242A1 A semiconductor component including protection means
01/26/1994EP0580213A1 High voltage transistor having edge termination utilizing trench technology
01/26/1994EP0580162A1 Wafer with defined grinded warp and process for manufacturing
01/26/1994EP0580052A2 Process for making microstructures
01/26/1994EP0580050A1 Process for making a polymer/metal or a polymer/semi-conductor band
01/26/1994EP0579993A1 Testing and exercising individual, unsingulated dies on a wafer
01/26/1994EP0579924A1 Intra-module spare routing for high density electronic packages
01/26/1994EP0579911A2 Process for preparing composite isotropic copper-based materials by slip casting, having a low thermal expansion coefficient and high electrical conductivity and their use
01/26/1994EP0579779A1 A single transistor non-volatile electrically alterable semiconductor memory device
01/26/1994EP0424394B1 Means for reducing damage to jfets from electrostatic discharge events
01/26/1994CN1081284A Asic prototyper
01/26/1994CN1081283A Semiconductor device having a double-layered silicide structure and fabricating method thereof
01/26/1994CN1081282A Electric circuit and method for forming the same
01/25/1994US5282224 Signal processing integrated circuit device
01/25/1994US5282167 Dynamic random access memory
01/25/1994US5282163 Programmable logic device with circuit portions common to both configuration and use circuits
01/25/1994US5282160 Non-volatile semiconductor memory having double gate structure
01/25/1994US5282159 Semiconductor memory with increased capacitive storage capabilities and reduced size
01/25/1994US5282158 Transistor antifuse for a programmable ROM
01/25/1994US5282139 Device for production control and method for production control using the same
01/25/1994US5282018 Power semiconductor device having gate structure in trench
01/25/1994US5281872 Current detectable transistor having sense resistor with particular temperature coefficient
01/25/1994US5281867 Multiple channel sampling circuit having minimized crosstalk interference
01/25/1994US5281854 Highly conductive, avoiding formation of silicon nodules at aluminum to silicon interface
01/25/1994US5281851 Integrated circuit packaging with reinforced leads
01/25/1994US5281850 Semiconductor device multilayer metal layer structure including conductive migration resistant layers
01/25/1994US5281849 Semiconductor package with segmented lead frame
01/25/1994US5281848 Tape carrier semiconductor device
01/25/1994US5281847 Groove structure for isolating elements comprising a GTO structure
01/25/1994US5281843 Thin-film transistor, free from parasitic operation