Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/1998
10/27/1998US5828457 Sample inspection apparatus and sample inspection method
10/27/1998US5828433 Liquid crystal display device and a method of manufacturing the same
10/27/1998US5828308 Current sensing circuit formed in narrow area and having sensing electrode on major surface of semiconductor substrate
10/27/1998US5828246 Circuit in CMOS technology for high speed driving of optical sources
10/27/1998US5828134 Metallization to improve electromigration resistance
10/27/1998US5828133 Support for an electrochemical deposit
10/27/1998US5828132 Semiconductor device having perfluorinated and non-fluorinated parylene intermetal dielectric
10/27/1998US5828131 Low temperature formation of low resistivity titanium silicide
10/27/1998US5828130 Selectively deposited tungsten/doped polysilicon composite landing pad overlaying and electrically connecting active region; good etch stop; barrier to aluminum/silicon interdiffusion
10/27/1998US5828129 Semiconductor memory device including a capacitor having a top portion which is a diffusion barrier
10/27/1998US5828128 Semiconductor device having a bump which is inspected from outside and a circuit board used with such a semiconductor device
10/27/1998US5828126 Package for containing an integrated circuit die within a central cavity
10/27/1998US5828125 Ultra-high density warp-resistant memory module
10/27/1998US5828124 Low-noise bipolar transistor
10/27/1998US5828122 Semiconductor body with a substrate glued to a support body
10/27/1998US5828121 Multi-level conduction structure for VLSI circuits
10/27/1998US5828120 Semiconductor device and production method thereof
10/27/1998US5828116 Semiconductor device with bonded wires
10/27/1998US5828114 Method for the prevention of misfit dislocation in silicon wafer and silicon wafer structure manufactured thereby
10/27/1998US5828113 Double density MROM array structure
10/27/1998US5828111 Underlying, raised grid topography (mesas) allows increased length; back to back diodes formed by ion implantation on flat regions
10/27/1998US5828109 Semi-conductor integrated circuit device
10/27/1998US5828108 Semiconductor integrated circuit suppressing noises due to short-circuit/substrate currents
10/27/1998US5828107 Semiconductor integrated circuit device
10/27/1998US5828106 ESD tolerated SOI device
10/27/1998US5828104 MOS structure device having asymmetric LDD structure and fabrication method thereof
10/27/1998US5828103 Recessed lightly doped drain (LDD) for higher performance MOSFET
10/27/1998US5828099 Semiconductor device having a nonvolatile memory cell in which the floating gate is charged with hot charge carriers at the source side
10/27/1998US5828098 Semiconductor capacitor dielectric having various grain sizes
10/27/1998US5828097 Semiconductor memory device with a stacked capacitance structure
10/27/1998US5828096 Semiconductor device having a contact hole
10/27/1998US5828094 Memory cell structure having a vertically arranged transistors and capacitors
10/27/1998US5828093 Ceramic capacitor and semiconductor device in which the ceramic capacitor is mounted
10/27/1998US5828092 Semiconductor memory device and method for its production
10/27/1998US5828091 Interline charge coupled device solid state image sensor
10/27/1998US5828087 AlInAs semiconductor device contaning Si and P
10/27/1998US5828084 High performance poly-SiGe thin film transistor
10/27/1998US5828083 Array of thin film transistors without a step region at intersection of gate bus and source bus electrodes
10/27/1998US5828082 Thin film transistor having dual insulation layer with a window above gate electrode
10/27/1998US5828081 Integrated semiconductor device
10/27/1998US5828080 A mixed oxide thin film of zirconium and rare earth elements including yttrium; rocking curve of the film has half-value width upto 1.50 degree; improved crystal and surface properties
10/27/1998US5828076 Microelectronic component and process for its production
10/27/1998US5828070 System and method for cooling workpieces processed by an ion implantation system
10/27/1998US5828039 Method and apparatus for heating chemical used in microelectronic device fabrication
10/27/1998US5828036 Method and apparatus for reflowing and annealing borophosphosilicate glass
10/27/1998US5827986 Apparatus for cleaning semiconductor wafers
10/27/1998US5827785 Introducing silicon tetrafluoride as first fluorine source, tetraethoxysilane as silicon source and fluorine and nitrogen trifloride as second halogen source in a chamber along with oxygen to form fluorine doped layer
10/27/1998US5827784 Cleaning using sequential application of two different aqueous etchants; low resistance contacts
10/27/1998US5827783 Stacked capacitor having improved charge storage capacity
10/27/1998US5827782 Multiple etch method for optimizing Inter-Metal Dielectric (IMD) spacer layer profile
10/27/1998US5827781 Planarization slurry including a dispersant and method of using same
10/27/1998US5827780 Additive metalization using photosensitive polymer as RIE mask and part of composite insulator
10/27/1998US5827779 Method of manufacturing semiconductor mirror wafers
10/27/1998US5827778 Method of manufacturing a semiconductor device using a silicon fluoride oxide film
10/27/1998US5827776 Method of making an integrated circuit which uses an etch stop for producing staggered interconnect lines
10/27/1998US5827775 Phase mask laser fabrication of fine pattern electronic interconnect structures
10/27/1998US5827774 Ion implantation method using tilted ion beam
10/27/1998US5827773 Depositing microcrystalline film having amorphous matter, microcrystallites embedded therein, annealing; forms uniform crystal grains
10/27/1998US5827772 Oxygen annealing followed by hydrogen annealing to reduce oxygen concentration; increased carrier mobility
10/27/1998US5827771 Readout backside processing for hybridization
10/27/1998US5827770 Method of making a semiconductor device having improved contacts to a thin conductive layer
10/27/1998US5827769 Method for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrode
10/27/1998US5827768 Method for manufacturing an MOS transistor having a self-aligned and planarized raised source/drain structure
10/27/1998US5827766 Method for fabricating cylindrical capacitor for a memory cell
10/27/1998US5827765 Etching portions of oxide collar and semiconducting material to reopen trench; filling with single crystalline semiconducting material; selectively controlling outdiffusion of dopant; greater thermal budget, prevent defect formation
10/27/1998US5827764 Forming isolation region on substrate, forming polysilicon and tungsten silicide layers, oxide layer, butt contact photoresist layer, etching, doping, depositing second polysilicon layer
10/27/1998US5827763 Method of forming a multiple transistor channel doping using a dual resist fabrication sequence
10/27/1998US5827762 Method for forming buried interconnect structue having stability at high temperatures
10/27/1998US5827761 Method of making NMOS and devices with sequentially formed gates having different gate lengths
10/27/1998US5827760 Method for fabricating a thin film transistor of a liquid crystal display device
10/27/1998US5827756 Method of manufacturing semiconductor device
10/27/1998US5827751 Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
10/27/1998US5827747 Method for forming LDD CMOS using double spacers and large-tilt-angle ion implantation
10/27/1998US5827623 Photolithography in forming semiconductors
10/27/1998US5827571 Hot-wall CVD method for forming a ferroelectric film
10/27/1998US5827437 Etchant gas mixture containing chlorine and boron trichloride; different flow ratios
10/27/1998US5827436 Boron trichloride, chlorine etching gases and an inert gas are used in first step of etching aluminum alloy film using high frequency power, just before underlayer silicon dioxide film is exposed frequency power is lowered
10/27/1998US5827435 Plasma processing method and equipment used therefor
10/27/1998US5827396 Power source, transmission device, roller, wafer carrier, wafer guide; uniform etching
10/27/1998US5827395 Polishing pad used for polishing silicon wafers and polishing method using the same
10/27/1998US5827394 Selectively exposing adhesive layer to radiation to degrade adhesive and remove integrated circuit die
10/27/1998US5827371 Unibody crucible and effusion source employing such a crucible
10/27/1998US5827370 Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace
10/27/1998US5827366 Czochralski growing apparatus suppressing growth striation of long large-diameter monocrystalline silicon
10/27/1998US5827365 Adding small amount of halide and/or halogen gas during crystallization of intermetallic using halogen-free hydride and organic metal; flattening heterojunction interface, prevention of polycrystalline growth on mask
10/27/1998US5827343 Anodically bonding predetermined glass with metal or semiconductor material as rapidly as possible, immediately cooling, then heating below glass transition temperature to achieve a change in flexibility
10/27/1998US5827339 Apparatus for generating chemical-free dry air
10/27/1998US5827118 Clean storage unit air flow system
10/27/1998US5827110 Polishing facility
10/27/1998US5827080 Rotary section current transmitting mechanism
10/27/1998US5827035 Lead frame pusher device
10/27/1998US5826969 Illuminating screw driver
10/27/1998US5826778 Clamping mechanism for a bonding apparatus
10/27/1998US5826628 Form tooling and method of forming semiconductor package leads
10/27/1998US5826601 Treating liquid replacing method, substrate treating method and substrate treating apparatus
10/27/1998US5826328 Method of making a thin radio frequency transponder
10/27/1998US5826292 Disk cleaning and drying apparatus
10/27/1998CA2094436C Pressurized interface apparatus for transferring a semiconductor wafer between a pressurized sealable transportable container and a processing equipment
10/27/1998CA2081222C Method for production of microcapsule type conductive filler
10/27/1998CA2048517C Process for growing crystalline thin film
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