Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/1998
10/13/1998US5821603 Integrated circuit die comprising silicon nitride dielectric protective layer formed by chemical depositing with variable ammonia flow rate, resulting gradually decreasing hydrogen concentration; blocking the over-etching
10/13/1998US5821601 Bipolar semiconductor integrated circuit with a protection circuit
10/13/1998US5821600 Isolation by active transistors with grounded gates
10/13/1998US5821598 Pyroelectric detector incorporating ferroelectric layer in transistor
10/13/1998US5821594 Semiconductor device having a self-aligned type contact hole
10/13/1998US5821592 Dynamic random access memory arrays and methods therefor
10/13/1998US5821591 High density read only memory cell configuration and method for its production
10/13/1998US5821590 Prevents increase of contact resistance
10/13/1998US5821589 Semiconductor device
10/13/1998US5821587 Semiconductor device
10/13/1998US5821585 Thin film transistor and manufacturing method thereof
10/13/1998US5821584 Thin film transistors comprising drain offset regions
10/13/1998US5821583 Trenched DMOS transistor with lightly doped tub
10/13/1998US5821582 Structures for preventing reverse engineering of integrated circuits
10/13/1998US5821581 Non-volatile memory cell structure and process for forming same
10/13/1998US5821579 Semiconductor memory device and method of manufacturing the same
10/13/1998US5821578 Semiconductor switching element, programmable functional device, and operation methods for programmable functional device
10/13/1998US5821577 Graded channel field effect transistor
10/13/1998US5821576 Silicon carbide power field effect transistor
10/13/1998US5821575 Compact self-aligned body contact silicon-on-insulator transistor
10/13/1998US5821574 Charge-coupled device having different light-receiving region and charge isolation layer structures
10/13/1998US5821573 Field effect transistor having an arched gate and manufacturing method thereof
10/13/1998US5821568 Multilayer element with nitride of aluminum, gallium or indium for light emitting diodes
10/13/1998US5821564 TFT with self-align offset gate
10/13/1998US5821563 Semiconductor device free from reverse leakage and throw leakage
10/13/1998US5821562 Semiconductor device formed within asymetrically-shaped seed crystal region
10/13/1998US5821560 Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element
10/13/1998US5821559 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
10/13/1998US5821558 Antifuse structures
10/13/1998US5821550 For writing a circuit pattern of a workpiece
10/13/1998US5821549 Through-the-substrate investigation of flip-chip IC's
10/13/1998US5821456 Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same
10/13/1998US5821175 Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
10/13/1998US5821174 Forming a chromium oxide layer on silicon nitride by physical vapor deposition to releive the compression stress of silicon nitride and prevent cracks from occurring
10/13/1998US5821173 Introducing chromium and/or a chromium compound only in the region of the silicon oxide film
10/13/1998US5821172 Oxynitride incorporated into gate dielectric; nitrogen free silicon oxide formed between substrate and oxynitride layer; carrier mobility preserved, reduced boron penetration, reliablity; increased oxidation rate
10/13/1998US5821170 Method for etching an insulating material
10/13/1998US5821169 Hard mask method for transferring a multi-level photoresist pattern
10/13/1998US5821168 Process for forming a semiconductor device
10/13/1998US5821167 Method of manufacturing semiconductor mirror wafers
10/13/1998US5821166 Method of manufacturing semiconductor wafers
10/13/1998US5821165 Forming a polysilicon and a silicon nitride dielectric film on insulator film, pattering nitride, performing thermal oxidation of polysilicon using nitride pattern as mask, removing nitride film, etching polysilicon using oxide mask
10/13/1998US5821164 Method for forming metal line
10/13/1998US5821163 Preventing oxygen microloading of a spin-on-glass layer by introducing hydrogen gas into the etching environment; controlled etchback
10/13/1998US5821162 Method of forming multi-layer wiring utilizing SOG
10/13/1998US5821161 For sealing semiconductor substrates to caps
10/13/1998US5821160 Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
10/13/1998US5821159 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same
10/13/1998US5821158 Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature
10/13/1998US5821157 Argon amorphizing polysilicon layer fabrication
10/13/1998US5821155 Adding gaseous compounds of group 3 and group 5 elements; simultaneously adding silicon iodide as dopant gas with a carrier; low growth temperatures; dopant concentration control
10/13/1998US5821154 Plated heat sink structure; gold layer, gallium arsenide substrate, tungsten layer
10/13/1998US5821153 Method to reduce field oxide loss from etches
10/13/1998US5821152 Methods of forming hemispherical grained silicon electrodes including multiple temperature steps
10/13/1998US5821151 Preferentially etching doped polysilicon coating masked by pattern of doped silicon oxide remaining on surface after chemomechanical polishing to remove discontinuous overcoating of undoped, oxidized silicon dots; simplification
10/13/1998US5821150 Forming a pair of openings in semiconductor material, plugging openings with electrically conductive material to form electrodes with semiconductor material between them
10/13/1998US5821149 Method of fabricating a heterobipolar transistor
10/13/1998US5821147 Integrated circuit fabrication
10/13/1998US5821146 Method of fabricating FET or CMOS transistors using MeV implantation
10/13/1998US5821145 Method for isolating elements in a semiconductor device
10/13/1998US5821144 Lateral DMOS transistor for RF/microwave applications
10/13/1998US5821143 Fabrication methods for nonvolatile memory devices including extended sidewall electrode
10/13/1998US5821142 Method for forming a capacitor with a multiple pillar structure
10/13/1998US5821141 Dynamic random access memory; wide upper hemispherical plug and narrower lower plug holes; formed by either isotropic etch followed by anisotropic etch; or etching layers with different etch rates
10/13/1998US5821140 Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
10/13/1998US5821139 Method for manufacturing a DRAM with increased electrode surface area
10/13/1998US5821138 Forming multilayer of first and second insulating films, an amorophous silicon films, holding a metal element that enhance the crystallization of silicon, crystallization by heat treatment, forming thin film transistor and sealing film
10/13/1998US5821137 Thin film semiconductor device including a driver and a matrix circuit
10/13/1998US5821136 Inverted field-effect device with polycrystalline silicon/germanium channel
10/13/1998US5821135 Irradiating through the backside of a transparent substrate with laser beam; forming nucleation sites within amorphous silicon; front side crystallization; large single silicon crystals for microelectromechanical system structures
10/13/1998US5821134 Method of manufacturing an optoelectronic device
10/13/1998US5821133 Method of manufacturing active matrix substrate
10/13/1998US5821131 Method for inspecting process defects occurring in semiconductor devices
10/13/1998US5821034 Method for forming micro patterns of semiconductor devices
10/13/1998US5821017 Method of deposition
10/13/1998US5821015 Photolithography
10/13/1998US5821014 Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
10/13/1998US5821005 Ferroelectrics thin-film coated substrate and manufacture method thereof and nonvolatile memory comprising a ferroelectrics thinfilm coated substrate
10/13/1998US5820950 Optical pellicle and package
10/13/1998US5820947 Plasma processing method and apparatus
10/13/1998US5820946 Method for fabricating ferroelectric thin film
10/13/1998US5820942 Atomizing a fluoropolymer solution than contacting with light energy forming a film adhering to a substrate
10/13/1998US5820926 Forming barrier layer on reflective layer provided on substrate, forming antireflection layer on barrier layer
10/13/1998US5820923 For use with temperature sensitive substrates such as dielectrics and electronics; lowered temperature processing
10/13/1998US5820919 Method of manufacturing a liquid jet recording head
10/13/1998US5820770 Thin film magnetic head including vias formed in alumina layer and process for making the same
10/13/1998US5820746 Sputtering a metal or alloy onto a substrate, corroding surface by applying halogen ions in solution and constant current electrolysis, measuring electrode potential, analyzing physical properties; in-line quantitative analysis
10/13/1998US5820723 Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
10/13/1998US5820716 Method for surface mounting electrical components to a substrate
10/13/1998US5820692 Vacuum compatible water vapor and rinse process module
10/13/1998US5820689 Processing semiconductor wafers that do not crack during a cleaning process
10/13/1998US5820688 Method for the treatment of semiconductor material
10/13/1998US5820685 Wafer support device
10/13/1998US5820683 Object-supporting boat
10/13/1998US5820682 Tilted target affixed to a rotatable target plate, substrate heater rotatable on its own axis, eximer laser in vacuum chamber; high temperature superconductive; high frequency filter for information communication technologies
10/13/1998US5820681 Unibody crucible and effusion cell employing such a crucible
10/13/1998US5820679 Fabrication system and method having inter-apparatus transporter
10/13/1998US5820677 Coater
10/13/1998US5820672 OISF control in czochralski-grown crystals
10/13/1998US5820658 Apparatus and method for processing exhaust gas
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