Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2000
05/30/2000US6069096 Operating method of vacuum processing system and vacuum processing system
05/30/2000US6069095 Ultra-clean wafer chuck assembly for moisture-sensitive processes conducted in rapid thermal processors
05/30/2000US6069094 Method for depositing a thin film
05/30/2000US6069093 Process of forming metal films and multi layer structure
05/30/2000US6069092 Etching silicon dioxide surface within heated chemical reactor using fluorohydrocarbon plasma generated by applying a radio frequency power to the lower electrode supporting the substrate
05/30/2000US6069091 Etching with first fluorocarbon/bromine compound source gas mixture and then with second gas mixture containing also achlorine compound to form smooth sidewall profile silicon layers for microelectronic circuits
05/30/2000US6069090 Method and apparatus for semiconductor device fabrication
05/30/2000US6069089 Defective semiconductor redistribution labeling system
05/30/2000US6069088 Method for prolonging life time of a plasma etching chamber
05/30/2000US6069087 Highly selective dry etching process
05/30/2000US6069086 Non-HBr shallow trench isolation etch process
05/30/2000US6069085 Slurry filling a recess formed during semiconductor fabrication
05/30/2000US6069084 Method of forming a low-k layer in an Integrated circuit
05/30/2000US6069083 Polishing substrate surface having a stop film underlying material to be polished away using slurry of abrasive particles composed of same material as stop film
05/30/2000US6069082 Method to prevent dishing in damascene CMP process
05/30/2000US6069081 Two-step chemical mechanical polish surface planarization technique
05/30/2000US6069080 Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
05/30/2000US6069079 Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
05/30/2000US6069078 Multi-level interconnect metallization technique
05/30/2000US6069077 Curing patterned photoresist mask so that it can withstand higher than normal wafer temperatures during etching of silicon dioxide layer
05/30/2000US6069076 Method of making a semiconductor device with changeable interconnection
05/30/2000US6069075 Reducing reflectivity on a semiconductor wafer by annealing aluminum and titanium
05/30/2000US6069074 Method of forming conductor shielding to prevent arcing effect during contact implant process
05/30/2000US6069073 Method for forming diffusion barrier layers
05/30/2000US6069072 CVD tin barrier layer for reduced electromigration of aluminum plugs
05/30/2000US6069071 Method of manufacturing an interconnect by dissolving an intermetallic compound film into a main component of a metal film
05/30/2000US6069070 Multilevel interconnections of electronic components
05/30/2000US6069069 Method for planarizing a low dielectric constant spin-on polymer using nitride etch stop
05/30/2000US6069068 Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
05/30/2000US6069066 Method of forming bonding pad
05/30/2000US6069065 Increasing a bond strength with solder when performing wiring through soldering.
05/30/2000US6069063 Method to form polysilicon resistors shielded from hydrogen intrusion
05/30/2000US6069062 Methods for forming shallow junctions in semiconductor wafers
05/30/2000US6069061 Method for forming polysilicon gate
05/30/2000US6069060 Method of manufacturing a semiconductor device having a single crystal silicon electrode
05/30/2000US6069059 Well-drive anneal technique using preplacement of nitride films for enhanced field isolation
05/30/2000US6069058 Shallow trench isolation for semiconductor devices
05/30/2000US6069057 Method for fabricating trench-isolation structure
05/30/2000US6069056 Method of forming isolation structure
05/30/2000US6069055 Fabricating method for semiconductor device
05/30/2000US6069054 Method for forming isolation regions subsequent to gate formation and structure thereof
05/30/2000US6069053 Formation of conductive rugged silicon
05/30/2000US6069052 Process and structure for increasing capacitance of stack capacitor
05/30/2000US6069051 Method of producing planar metal-to-metal capacitor for use in integrated circuits
05/30/2000US6069049 Shrink-wrap collar from DRAM deep trenches
05/30/2000US6069048 Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits
05/30/2000US6069047 Method of making damascene completely self aligned ultra short channel MOS transistor
05/30/2000US6069046 Transistor fabrication employing implantation of dopant into junctions without subjecting sidewall surfaces of a gate conductor to ion bombardment
05/30/2000US6069045 Method of forming C49-structure tungsten-containing titanium salicide structure
05/30/2000US6069044 Process to fabricate ultra-short channel nMOSFETS with self-aligned silicide contact
05/30/2000US6069043 Method of making punch-through field effect transistor
05/30/2000US6069042 Multi-layer spacer technology for flash EEPROM
05/30/2000US6069041 Process for manufacturing non-volatile semiconductor memory device by introducing nitrogen atoms
05/30/2000US6069040 Fabricating a floating gate with field enhancement feature self-aligned to a groove
05/30/2000US6069038 Method of manufacturing a semiconductor integrated circuit device
05/30/2000US6069037 Method of manufacturing embedded DRAM
05/30/2000US6069036 Method of fabricating semiconductor device
05/30/2000US6069035 Techniques for etching a transition metal-containing layer
05/30/2000US6069034 DMOS architecture using low N-source dose co-driven with P-body implant compatible with E2 PROM core process
05/30/2000US6069033 Method of manufacturing a non-volatile memory and a CMOS transistor
05/30/2000US6069032 Salicide process
05/30/2000US6069031 Process to form CMOS devices with higher ESD and hot carrier immunity
05/30/2000US6069030 CMOSFET and method for fabricating the same
05/30/2000US6069029 Semiconductor device chip on lead and lead on chip manufacturing
05/30/2000US6069028 Technique for attaching die to leads
05/30/2000US6069027 Fixture for lid-attachment for encapsulated packages
05/30/2000US6069026 Semiconductor device and method of fabrication
05/30/2000US6069024 Method for producing a semiconductor device
05/30/2000US6069023 Attaching heat sinks directly to flip chips and ceramic chip carriers
05/30/2000US6069021 Boron phosphide buffer layers
05/30/2000US6069019 Method of manufacturing transistor array
05/30/2000US6069018 Method for manufacturing a cathode tip of electric field emission device
05/30/2000US6069017 Method for real-time in-line testing of semiconductor wafers
05/30/2000US6068971 Process for determination of ions in fluids by masking of interfering ions
05/30/2000US6068964 Method for patterning an insulator film and installing a grounding pin through electron beam irradiation
05/30/2000US6068952 Second pattern consists of a plurality of said first patterns so that it receives the same influence of aberration as said first pattern when irradiated with light.
05/30/2000US6068928 Forming a primary silicon structure in an amorphous or polycrystalline form, and doping the structure with an oxygen-containing dopant in a concentration exceeding the solubility limit. heat treatment to form dopant precipitations
05/30/2000US6068923 Use of argon sputtering to modify surface properties by thin film deposition
05/30/2000US6068884 Method of making low κ dielectric inorganic/organic hybrid films
05/30/2000US6068881 For applying a liquid as a coating on a substrate; avoids use of solvent to clean the back surface of the substrate
05/30/2000US6068879 Adding slurry with corrosion inhibitor on the polishing pad and polishing the partially fabricated integrated circuit surface which had corrosion inhibitor previously seeped into seams of metal plug
05/30/2000US6068818 Electronic device for performing active biological operations; and methods for manufacture of such devices containing active electrodes especially adapted for electrophoretic transport of nucleic acids, their hybridization and analysis
05/30/2000US6068788 Mixture of a phenyl sulfonate, hydrogen fluoride and water
05/30/2000US6068787 Chemical mechanical polishing; mixture of catalyst and stabilizer
05/30/2000US6068784 In vacuum; inductive coupling; controlling temperature
05/30/2000US6068727 Apparatus and method for separating a stiffener member from a flip chip integrated circuit package substrate
05/30/2000US6068704 Transfer arm apparatus and semiconductor processing system using the same
05/30/2000US6068703 Gas mixing apparatus and method
05/30/2000US6068699 Apparatus for fabricating semiconductor single crystal
05/30/2000US6068690 Precursor solution for forming thin film of ferroelectric substance and production process thereof
05/30/2000US6068685 Semiconductor manufacturing system with getter safety device
05/30/2000US6068669 Compliant interconnect for testing a semiconductor die
05/30/2000US6068668 A clean fabrication environment where manufacturing apparatus is streamline, operative space is maximized and operator interface is facilitated; having a sensor activated extensible shuttle housed where an outer door is closed flush
05/30/2000US6068441 Substrate transfer system for semiconductor processing equipment
05/30/2000US6068317 Device for adjusting space between chip in semiconductor chip tester
05/30/2000US6068316 Large diameter wafer conveying system and method thereof
05/30/2000US6068180 System, apparatus, and method for connecting a semiconductor chip to a three-dimensional leadframe
05/30/2000US6068174 Device and method for clamping and wire-bonding the leads of a lead frame one set at a time
05/30/2000US6068137 A carrier for supporting semiconductor wafers during washing, conveying, and transporting comprises a polybutylene naphthalate resin having tensile elongation of 100% or less and avoids contamination due to ahdesion with wafer
05/30/2000US6068104 Device for securing a moving object at a destination