Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2000
06/06/2000US6070731 IC receiving tray storage device and mounting apparatus for the same
06/06/2000US6070730 Disk container
06/06/2000US6070601 Jet-cleaning device for developing station
06/06/2000US6070600 Point of use dilution tool and method
06/06/2000US6070599 Non-plasma halogenated gas flow to prevent metal residues
06/06/2000US6070552 Substrate processing apparatus
06/06/2000US6070551 Deposition chamber and method for depositing low dielectric constant films
06/06/2000US6070550 Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers
06/06/2000US6070341 Vacuum processing and operating method with wafers, substrates and/or semiconductors
06/06/2000US6070321 Solder disc connection
06/06/2000US6070284 Wafer cleaning method and system
06/06/2000CA2197291C Low voltage silicon controlled rectifier structure for esd input pad protection in cmos ic's
06/06/2000CA2015891C Method for forming variable width isolation structures
06/04/2000CA2288621A1 Multi-wafer polishing tool
06/02/2000WO2000031806A1 Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
06/02/2000WO2000031798A1 High density electronic package
06/02/2000WO2000031796A1 Method for producing an integrated circuit processed on both sides
06/02/2000WO2000031795A1 Nonvolatile memory
06/02/2000WO2000031794A1 Chemical mechanical polishing of feram capacitors
06/02/2000WO2000031793A1 Peripheral transistor of a non-volatile memory
06/02/2000WO2000031792A1 Oxidative top electrode deposition process, and microelectronic device structure
06/02/2000WO2000031791A1 Textured bi-based oxide ceramic films
06/02/2000WO2000031790A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicum oxynitride layer
06/02/2000WO2000031789A1 Method of making straight wall containers and the resultant containers
06/02/2000WO2000031788A1 Bpsg reflow method
06/02/2000WO2000031787A1 Dry etching device and dry etching method
06/02/2000WO2000031786A1 Etching solution, etched article and method for etched article
06/02/2000WO2000031785A1 Etching solution, etched article and method for etched article
06/02/2000WO2000031783A1 Fabrication of gallium nitride layers on silicon
06/02/2000WO2000031782A1 Silane-based oxide anti-reflective coating for patterning of metal features in semiconductor manufacturing
06/02/2000WO2000031779A1 An improved high quality factor capacitor
06/02/2000WO2000031778A1 Integrated inductive resistor and method for producing a high quality integrated inductive resistor
06/02/2000WO2000031777A1 Fast heating and cooling apparatus for semiconductor wafers
06/02/2000WO2000031776A2 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
06/02/2000WO2000031775A2 A method of manufacturing an electronic device comprising two layers of organic-containing material
06/02/2000WO2000031774A2 Holding device for a substrate
06/02/2000WO2000031686A1 Method for making a flush chip card using a laser engraving step and resulting chip card
06/02/2000WO2000031592A1 Method of detecting aberrations of an optical imaging system
06/02/2000WO2000031589A1 Method of collecting photomask
06/02/2000WO2000031555A1 Probe assembly for testing
06/02/2000WO2000031324A1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
06/02/2000WO2000031322A1 Method for epitaxial growth on a substrate
06/02/2000WO2000031317A1 Reactor and method for chemical vapour deposition
06/02/2000WO2000031316A1 Co-Ti ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
06/02/2000WO2000031183A1 A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
06/02/2000WO2000030817A1 Single station cutting apparatus for separating semiconductor packages
06/02/2000WO2000030807A2 A carrier head with edge control for chemical mechanical polishing
06/02/2000WO2000020154A9 Method and apparatus for placing solder balls on a substrate
06/02/2000WO2000014793A3 In-situ integrated oxide etch process particularly useful for copper dual damascene
06/02/2000WO2000013227A3 Method of manufacturing a semiconductor device with a bipolar transistor
06/02/2000WO2000013211A9 Silicon on insulator structure from low defect density single crystal silicon
06/02/2000WO2000013208A3 Selectively doped trench device isolation
06/02/2000WO2000013207A3 Method for forming a metal film
06/02/2000WO2000013206A3 METHOD FOR DOPING EXTERNAL BASE CONNECTION AREAS OF Si-BASED SINGLE POLYSILICON NPN BI-POLAR TRANSISTORS
06/01/2000CA2290048A1 Semiconductor device with low parasitic capacitance
05/2000
05/31/2000EP1005163A2 Programmable logic device architectures
05/31/2000EP1005159A1 Switching circuit
05/31/2000EP1005157A2 Tunable CMOS delay element
05/31/2000EP1005095A1 Photovoltaic element and method for manufacture thereof
05/31/2000EP1005094A2 Semiconductor devices having a thin film field-effect transistor and corresponding manufacturing methods
05/31/2000EP1005093A2 Semiconductor circuit with TFTs
05/31/2000EP1005092A1 High breakdown voltage PN junction structure and related manufacturing process
05/31/2000EP1005091A1 A method of manufacturing a vertical-channel MOSFET
05/31/2000EP1005090A1 Semiconductor component with at least a capacitor having a resistance element and its fabrication process
05/31/2000EP1005088A1 Sintered body for and manufacture of ceramic substrates
05/31/2000EP1005087A1 Integrated circuit and its manufacturing method
05/31/2000EP1005086A2 Metal foil having bumps, circuit substrate having the metal foil, and semiconductor device having the circuit substrate
05/31/2000EP1005081A2 Semiconductor nonvolatile memory and manufacturing method thereof
05/31/2000EP1005080A2 Method of forming a buried plate
05/31/2000EP1005079A1 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
05/31/2000EP1005078A1 Process for forming a conductive structure
05/31/2000EP1005077A2 Substrate support apparatus and method for fabricating same
05/31/2000EP1005076A1 Floating apparatus of substrate
05/31/2000EP1005075A1 Method of fabricating semiconductor device
05/31/2000EP1005074A1 Structure and method for improving low temperature copper reflow in semiconductor features
05/31/2000EP1005073A1 Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film
05/31/2000EP1005072A1 Method for wet-chemical treatment of semiconductor substrates
05/31/2000EP1005071A1 Method and device for dissolving surface layer of semiconductor substrate
05/31/2000EP1005070A2 A process for manufacturing a semiconductor integrated circuit device
05/31/2000EP1005069A2 Semiconductor wafer and method for fabrication thereof
05/31/2000EP1005068A2 GaN film having a reduced threading dislocations density and fabrication method thereof
05/31/2000EP1005067A2 Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
05/31/2000EP1005066A2 Resist pattern, process for the information of the same, and process for the formation of wiring pattern
05/31/2000EP1005065A2 Method of forming wiring pattern
05/31/2000EP1005064A2 Apparatus for wet etching the edge of a semiconductor wafer
05/31/2000EP1005063A2 Shadow ring and guide for supporting the shadow ring in a chamber
05/31/2000EP1005046A2 Semiconductor memory device
05/31/2000EP1004923A2 Liquid crystal display device with light diffusing layer
05/31/2000EP1004688A1 Substrate processing reactors
05/31/2000EP1004648A1 Improvements in or relating to semiconductor devices
05/31/2000EP1004524A1 Sheet support container
05/31/2000EP1004401A2 Wafer flattening system
05/31/2000EP1004142A1 Method and apparatus for identifying integrated circuits
05/31/2000EP1004141A1 A system and method for packaging integrated circuits
05/31/2000EP1004139A4 Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
05/31/2000EP1004139A1 Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
05/31/2000EP1004136A1 Plasma processing apparatus
05/31/2000EP1004057A1 Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
05/31/2000EP1003615A1 Method for passivation of a metallization layer
05/31/2000EP0885315B1 Misted precursor deposition apparatus and method with improved mist and mist flow