| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 04/25/2002 | US20020048971 Manufacturing method of semiconductor integrated circuit device |
| 04/25/2002 | US20020048970 Method of controlling a shape of an oxide layer formed on a substrate |
| 04/25/2002 | US20020048969 Method of forming film, method of manufacturing semiconductor device, and film forming apparatus |
| 04/25/2002 | US20020048968 Porous silicon oxycarbide integrated circuit insulator |
| 04/25/2002 | US20020048967 Fabrication process of a semiconductor integrated circuit device |
| 04/25/2002 | US20020048965 Method of oxidzing a silicon surface |
| 04/25/2002 | US20020048964 Growth promoting film is partially formed on a substrate having a portion which acts as a growth suppressing film on a surface thereof, and a nitride compound semiconductor film of a single crystal is grown thereon. |
| 04/25/2002 | US20020048963 Plasma enhanced chemical vapor deposition process |
| 04/25/2002 | US20020048962 Method for manufacturing a functional device by forming 45-degree-surface on (100) silicon |
| 04/25/2002 | US20020048961 Semiconductor device and method for manufacturing semiconductor device |
| 04/25/2002 | US20020048960 Endpoint detection in the etching of dielectric layers |
| 04/25/2002 | US20020048959 Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow |
| 04/25/2002 | US20020048958 Cleaning exposed surfaces of said conductive film and said barrier film; washing using a rinsing liquid; polishing until a portion of said insulator film is exposed; and washing exposed surfaces |
| 04/25/2002 | US20020048957 Method of cleaning a polishing pad conditioner and apparatus for performing the same |
| 04/25/2002 | US20020048956 Method and apparatus for shaping semiconductor surfaces |
| 04/25/2002 | US20020048955 Method for fabricating a thin, free-standing semiconductor device layer and for making a three-dimensionally integrated circuit |
| 04/25/2002 | US20020048954 Contact structure and production method thereof and probe contact assembly using same |
| 04/25/2002 | US20020048953 Selectively etching unwanted metal deposits on a surface of a wafer; etching solution comprising citric acid and an oxidizing agent, espeically hydrogen peroxide. |
| 04/25/2002 | US20020048952 Hard Mask for copper plasma etch |
| 04/25/2002 | US20020048951 Method includes applying either a pre-flux or a cover sheet over the solder ball mounting pads that prevents the solder ball mounting pads being plated with gold. |
| 04/25/2002 | US20020048950 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes |
| 04/25/2002 | US20020048949 Method of forming a metal wiring in a semiconductor device |
| 04/25/2002 | US20020048948 Tape having implantable conductive lands for semiconductor packaging process and method for manufacturing the same |
| 04/25/2002 | US20020048947 Semiconductor integrated circuit device and the process of the same |
| 04/25/2002 | US20020048946 Local interconnect structures for integrated circuits and methods for making the same |
| 04/25/2002 | US20020048945 Method for manufacturing semiconductor devices |
| 04/25/2002 | US20020048944 Multi-level circuit structure |
| 04/25/2002 | US20020048942 Method of manufacturing semiconductor device with two step formation of contact hole |
| 04/25/2002 | US20020048941 Process for producing semiconductor integrated circuit device |
| 04/25/2002 | US20020048940 Depositing a metal film at a first set of process conditions; and continuing to deposit the metal film at a second set of process conditions that are different from the first set of conditions. |
| 04/25/2002 | US20020048939 A low step coverage plasma-enhanced oxide layer is formed between a polygate and a gate spacer; a gap, which is broad at the top and narrow at the bottom, is formed;metal silicide formed on exposed polygate surface |
| 04/25/2002 | US20020048938 Crystal grains of large grain sizes can be formed by using a gas containing hydrogen and a borane, such as diborane, for forming a tungsten film |
| 04/25/2002 | US20020048937 Method of forming a conductive contact |
| 04/25/2002 | US20020048936 Metal layer in semiconductor device and method for fabricating the same |
| 04/25/2002 | US20020048935 Semiconductor device and method for manufacturing the same |
| 04/25/2002 | US20020048934 Planarization method on a damascene structure |
| 04/25/2002 | US20020048933 Technique for intralevel capacitive isolation of interconnect paths |
| 04/25/2002 | US20020048932 Semiconductor Processing Methods of Forming Integrated Circuity |
| 04/25/2002 | US20020048931 Damascene structure and method of making |
| 04/25/2002 | US20020048930 Interconnects are held to a minimum in length by using polyimide or polyarylenecyclobutane as an intermetal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment |
| 04/25/2002 | US20020048929 Method of producing an interconnect structure for an integrated circuit |
| 04/25/2002 | US20020048928 Semiconductor device and method for fabricating the same |
| 04/25/2002 | US20020048926 Method for forming a self-aligned copper capping diffusion barrier |
| 04/25/2002 | US20020048925 Attaching bond wires between a package and a semiconductor device that is sensitive to particles generated by the bond out process. |
| 04/25/2002 | US20020048924 For connecting a nonconducting substrate and a chip without lateral shorting |
| 04/25/2002 | US20020048921 A diffusion region is formed in semiconductive material, conductive line is formed which is laterally spaced from the diffusion region; integrated memory circuitry |
| 04/25/2002 | US20020048920 Semiconductor processing methods of forming a conductive gate and line |
| 04/25/2002 | US20020048919 Inactivating ions are implanted only to the source region of the semiconductor layer, to damage the crystal near the surface of the semiconductor layer, promoting siliciding reaction; parasitic resistance reduced |
| 04/25/2002 | US20020048918 Forming two layers, etching the top one and oxidizing to form a notch, where the bottom layer oxidizes at a faster rate than the top layer; making a transistor gate |
| 04/25/2002 | US20020048917 Semiconductor device and method of fabricating same |
| 04/25/2002 | US20020048916 Thinned, stackable semiconductor device having low profile |
| 04/25/2002 | US20020048914 Complementary metal oxide semiconductor (CMOS); transistor of a second conductivity type is Lateral MOS (LMOS) structure, and transistor of a first conductivity type is a Lateral Double-diffused (LDMOS) structure |
| 04/25/2002 | US20020048913 Beam of ions directed at a glancing angle to a layer of dielectric (silicon oxide, SiO2) over a semiconductor so ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of SiO2 |
| 04/25/2002 | US20020048912 Low concentration drain region has two or more kinds of different impurity concentrations, and not by changing impurity distribution uniformly over whole low concentration drain regions, drain withstanding voltage improved |
| 04/25/2002 | US20020048911 Selectively depositing polysilicon via chemical vapor deposition on the crystalline region and not the amorphous region of a substrate; conditions include chlorine gas-free and plasma-free |
| 04/25/2002 | US20020048910 Method and apparatus for forming a semiconductor device utilizing a low temperature process |
| 04/25/2002 | US20020048909 Process of vapor phase growth of nitride semiconductor |
| 04/25/2002 | US20020048908 Of a semiconductor substrate, by drawing impurities to a localized region, measuring such as with mass spectrometry, and calculating bulk impurities based on localized levels |
| 04/25/2002 | US20020048907 Methods of processing semiconductor wafer and producing IC card, and carrier |
| 04/25/2002 | US20020048906 Semiconductor device, method of manufacturing the device and mehtod of mounting the device |
| 04/25/2002 | US20020048905 Conductive resin film configured as a plurality of interconnect lines connected to the bump front electrodes; large number can be made at same time |
| 04/25/2002 | US20020048904 Method of fabricating semiconductor device |
| 04/25/2002 | US20020048903 Semiconductor device |
| 04/25/2002 | US20020048902 Method for forming overlay verniers for semiconductor devices |
| 04/25/2002 | US20020048901 Wafer thickness control during backside grind |
| 04/25/2002 | US20020048900 Adding a reactive layer to a first material, adding a hydrophilic layer to a second material, joining and pressing; hydrophilic silicon to aluminum gallium arsenide layer for example |
| 04/25/2002 | US20020048899 Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed |
| 04/25/2002 | US20020048898 Method of forming active and isolation areas with split active patterning |
| 04/25/2002 | US20020048897 Method of forming a self-aligned shallow trench isolation |
| 04/25/2002 | US20020048896 Method of fabricating isolation trenches in a semiconductor substrate |
| 04/25/2002 | US20020048895 Method of improving planarity of a photoresist |
| 04/25/2002 | US20020048894 Transistor and process for fabricating the same |
| 04/25/2002 | US20020048893 Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
| 04/25/2002 | US20020048892 Bipolar transistor with trenched-groove isolation regions |
| 04/25/2002 | US20020048891 Method for crystallizing semiconductor material without exposing it to air |
| 04/25/2002 | US20020048890 Sidewall spacer based fet alignment technology |
| 04/25/2002 | US20020048889 Method of manufacturing semiconductor device with sidewall metal layers |
| 04/25/2002 | US20020048888 Bombarding oxygen of silicon oxide and oxygen atoms proximate to said silicon oxide with an inert ion in an oxidizing atmosphere to increase thickness of silicon oxide |
| 04/25/2002 | US20020048887 Method for fabricating semiconductor device |
| 04/25/2002 | US20020048886 Semiconductor device and method for fabricating the same |
| 04/25/2002 | US20020048885 Method for fabricating semiconductor device |
| 04/25/2002 | US20020048884 Angled dopant implantation is followed by the formation of vertical trenches |
| 04/25/2002 | US20020048883 Method of forming a semiconductor-on-insulator transistor |
| 04/25/2002 | US20020048882 Capacitance coupling between the source and the floating gate forms a channel in the substrate, which is injected with hot electrons |
| 04/25/2002 | US20020048881 Charge trapping within a floating gate transistor to indicate a 0 or 1 bit state |
| 04/25/2002 | US20020048880 Method of manufacturing a semiconductor device including metal contact and capacitor |
| 04/25/2002 | US20020048879 Structure of a lower electrode of a capacitor and a process for fabricating the same |
| 04/25/2002 | US20020048878 Method of manufacturing capacitor in semiconductor devices |
| 04/25/2002 | US20020048877 Forming a tantalum oxynitride film with a high dielectric constant on a rubidium film, and further forming an upper electrode |
| 04/25/2002 | US20020048876 Method for fabricating capacitor of semiconductor device |
| 04/25/2002 | US20020048875 Thin film transistors and methods of forming thin film transistors |
| 04/25/2002 | US20020048874 Method for manufacturing semiconductor integrated circuit and semiconductor integrated circuit manufactured by this method |
| 04/25/2002 | US20020048873 Semiconductor device and production thereof |
| 04/25/2002 | US20020048871 Semiconductor device and manufacturing method therefor |
| 04/25/2002 | US20020048870 Method of patterning noble metals for semiconductor devices by electropolishing |
| 04/25/2002 | US20020048869 Method of forming semiconductor thin film and plastic substrate |
| 04/25/2002 | US20020048868 Insulated gate field effect transistor and method for forming the same |
| 04/25/2002 | US20020048867 Process for forming thin film transistor |
| 04/25/2002 | US20020048865 Method of forming a local interconnect |
| 04/25/2002 | US20020048864 Front and back sides of a film are irradiated with laser light from a solid state laser |