Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2002
09/17/2002US6452227 Semiconductor memory device and manufacturing method thereof
09/17/2002US6452226 Non-volatile semiconductor memory device and manufacturing method thereof
09/17/2002US6452225 Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitride
09/17/2002US6452224 Method for manufacture of improved deep trench eDRAM capacitor and structure produced thereby
09/17/2002US6452223 Methods of fabricating buried digit lines and semiconductor devices including same
09/17/2002US6452222 MIS type semiconductor device and method for manufacturing the same
09/17/2002US6452221 Enhancement mode device
09/17/2002US6452219 Insulated gate bipolar transistor and method of fabricating the same
09/17/2002US6452216 Nitride semiconductor light emitting device and apparatus including the same
09/17/2002US6452213 Semiconductor device having first, second and third non-crystalline films sequentially formed on insulating base with second film having thermal conductivity not lower than that of first film and not higher than that of third film, and method of manufacturing the same
09/17/2002US6452212 Semiconductor device and method for operating the same
09/17/2002US6452211 Semiconductor thin film and semiconductor device
09/17/2002US6452204 Tunneling magnetoresistance transducer and method for manufacturing the same
09/17/2002US6452201 Wafer-mapping method of wafer load port equipment
09/17/2002US6452196 Power supply hardening for ion beam systems
09/17/2002US6452195 Wafer holding pin
09/17/2002US6452194 Radiation source for use in lithographic projection apparatus
09/17/2002US6452193 Electron beam exposure apparatus, electron lens, and device manufacturing method
09/17/2002US6452178 Method and an apparatus of an inspection system using an electron beam
09/17/2002US6452173 Charged particle apparatus
09/17/2002US6452117 Method for filling high aspect ratio via holes in electronic substrates and the resulting holes
09/17/2002US6452115 Circuit pattern for multi-layer circuit board for mounting electronic parts
09/17/2002US6452111 Adhesives and adhesive films
09/17/2002US6452110 Patterning microelectronic features without using photoresists
09/17/2002US6452091 Method of producing thin-film single-crystal device, solar cell module and method of producing the same
09/17/2002US6452087 Photovoltaic device and method of fabricating the same
09/17/2002US6452017 Thermally stable trispyrazolylmethanate metal complexes; chemical vapor deposition of such as barium strontium titanate thin films on random access memory devices
09/17/2002US6451875 Connecting material for anisotropically electroconductive connection
09/17/2002US6451714 Radiant power source
09/17/2002US6451713 Semiconductors
09/17/2002US6451712 Method for forming a porous dielectric material layer in a semiconductor device and device formed
09/17/2002US6451711 Semiconductors, gadolinium oxide
09/17/2002US6451710 Method of manufacturing multi-layer printed wiring board
09/17/2002US6451709 Methodology of removing misplaced encapsulant for attachment of heat sinks in a chip on board package
09/17/2002US6451708 Method of forming contact holes in a semiconductor device
09/17/2002US6451707 Method of removing reaction product due to plasma ashing of a resist pattern
09/17/2002US6451706 Attenuation of reflecting lights by surface treatment
09/17/2002US6451705 Self-aligned PECVD etch mask
09/17/2002US6451704 Method for forming PLDD structure with minimized lateral dopant diffusion
09/17/2002US6451703 Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
09/17/2002US6451701 Method for making low-resistance silicide contacts between closely spaced electrically conducting lines for field effect transistors
09/17/2002US6451700 Method and apparatus for measuring planarity of a polished layer
09/17/2002US6451699 Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom
09/17/2002US6451698 System and method for preventing electrochemical erosion by depositing a protective film
09/17/2002US6451697 Method for abrasive-free metal CMP in passivation domain
09/17/2002US6451696 Method for reclaiming wafer substrate and polishing solution compositions therefor
09/17/2002US6451695 Depositing a monolayer of metal on the substrate surface by flowing a molecular precursor gas or vapor bearing the metal over a surface, flowing at least one radical species into the chamber and over the surface
09/17/2002US6451694 Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films
09/17/2002US6451693 Double silicide formation in polysicon gate without silicide in source/drain extensions
09/17/2002US6451691 Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern
09/17/2002US6451690 Method of forming electrode structure and method of fabricating semiconductor device
09/17/2002US6451689 Electroless plating of copper
09/17/2002US6451688 Opening of a downwardly protruding window for a dual damascene structure
09/17/2002US6451687 Intermetal dielectric layer for integrated circuits
09/17/2002US6451686 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
09/17/2002US6451685 Method for multilevel copper interconnects for ultra large scale integration
09/17/2002US6451684 Semiconductor device having a conductive layer side surface slope which is at least 90° and method for manufacturing the same
09/17/2002US6451683 Damascene structure and method of making
09/17/2002US6451682 Method of forming interconnect film
09/17/2002US6451681 Method of forming copper interconnection utilizing aluminum capping film
09/17/2002US6451679 Ion mixing between two-step titanium deposition process for titanium salicide CMOS technology
09/17/2002US6451678 Method of reducing overetch during the formation of a semiconductor device
09/17/2002US6451677 Plasma-enhanced chemical vapor deposition of a nucleation layer in a tungsten metallization process
09/17/2002US6451676 Method for setting the threshold voltage of a MOS transistor
09/17/2002US6451675 Semiconductor device having varied dopant density regions
09/17/2002US6451674 Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon
09/17/2002US6451673 Carrier gas modification for preservation of mask layer during plasma etching
09/17/2002US6451672 Method for manufacturing electronic devices in semiconductor substrates provided with gettering sites
09/17/2002US6451671 Semiconductor device production method and apparatus
09/17/2002US6451670 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method
09/17/2002US6451669 Method of forming insulated metal interconnections in integrated circuits
09/17/2002US6451667 Self-aligned double-sided vertical MIMcap
09/17/2002US6451666 Method for forming a lower electrode by using an electroplating method
09/17/2002US6451665 Method of manufacturing a semiconductor integrated circuit
09/17/2002US6451664 Method of making a MIM capacitor with self-passivating plates
09/17/2002US6451663 Method of manufacturing a cylindrical storage node in a semiconductor device
09/17/2002US6451662 Method of forming low-leakage on-chip capacitor
09/17/2002US6451661 DRAM capacitor formulation using a double-sided electrode
09/17/2002US6451660 Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water
09/17/2002US6451659 In semiconductors
09/17/2002US6451658 Graded layer for use in semiconductor circuits and method for making same
09/17/2002US6451657 Transistor with an ultra short channel length defined by a laterally diffused nitrogen implant
09/17/2002US6451656 CMOS inverter configured from double gate MOSFET and method of fabricating same
09/17/2002US6451655 Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure of limited planar dimension
09/17/2002US6451654 Process for fabricating self-aligned split gate flash memory
09/17/2002US6451653 Manufacturing process for the integration in a semiconductor chip of an integrated circuit including a high-density integrated circuit components portion and a high-performance logic integrated circuit components portion
09/17/2002US6451652 Method for forming an EEPROM cell together with transistor for peripheral circuits
09/17/2002US6451651 Method of manufacturing DRAM device invention
09/17/2002US6451650 Low thermal budget method for forming MIM capacitor
09/17/2002US6451649 Method for fabricating semiconductor device having a capacitor
09/17/2002US6451648 Process for buried-strap self-aligned to deep storage trench
09/17/2002US6451647 Semiconductors
09/17/2002US6451646 High-k dielectric materials and processes for manufacturing them
09/17/2002US6451645 Method for manufacturing semiconductor device with power semiconductor element and diode
09/17/2002US6451644 Method of providing a gate conductor with high dopant activation
09/17/2002US6451643 Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs
09/17/2002US6451642 Method to implant NMOS polycrystalline silicon in embedded FLASH memory applications
09/17/2002US6451641 Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
09/17/2002US6451640 Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
09/17/2002US6451639 Method for forming a gate in a semiconductor device