Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2003
01/16/2003US20030013301 Process for depositing WSIx layers on a high topography with a defined stoichiometry
01/16/2003US20030013300 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
01/16/2003US20030013299 Method for forming a metal plug of a semiconductor device
01/16/2003US20030013298 Coupling capacitance reduction
01/16/2003US20030013297 Reliability barrier integration for Cu application
01/16/2003US20030013296 Locally increasing sidewall density by ion implantation
01/16/2003US20030013295 Silicon carbide cap layers for low dielectric constant silicon oxide layers
01/16/2003US20030013294 Method of opening repair fuse of semiconductor device
01/16/2003US20030013293 Method of shallow trench isolation using a single mask
01/16/2003US20030013292 Etch stop in damascene interconnect structure and method of making
01/16/2003US20030013291 Passivation and planarization process for flip chip packages
01/16/2003US20030013290 Semiconductor device and method of formation
01/16/2003US20030013289 Method for forming a fuse in a semiconductor device
01/16/2003US20030013288 Gold wire for use in semiconductor packaging and high-frequency signal transmission and its fabrication method
01/16/2003US20030013285 Method of processing and plating wafers and other planar articles
01/16/2003US20030013284 Structure and method for fabricating power combining amplifiers
01/16/2003US20030013283 Method for improving a doping profile for gas phase doping
01/16/2003US20030013282 Method for fabricating a shallow ion implanted microelectronic structure
01/16/2003US20030013281 Polysilicon crystallizing method, method of fabricating thin film transistor using the same, and method of fabricating liquid crystal display thereof
01/16/2003US20030013280 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
01/16/2003US20030013279 Method for crystallizing amorphous film and method for fabricating LCD by using the same
01/16/2003US20030013278 Method for crystallizing amorphous film and method for fabricating LCD by using the same
01/16/2003US20030013277 Method of forming a patterned substantially crystalline Ta2O5 comprising material, and method of forming a capacitor having a capacitor dielectric region comprising substantially crystalline Ta2O5 comprising material
01/16/2003US20030013276 Compound semiconductor device
01/16/2003US20030013275 Isotopically pure silicon-on-insulator wafers and method of making same
01/16/2003US20030013274 Apparatus for manufacturing three-dimensional photonic crystal structure by fusion bonding the aligned lattice layers formed on wafers
01/16/2003US20030013273 Method of manufacturing SOI wafer
01/16/2003US20030013272 Trench device isolation structure and a method of forming the same
01/16/2003US20030013271 Method for high aspect ratio gap fill using sequential hdp-cvd
01/16/2003US20030013270 High aspect ratio high density plasma (HDP) oxide gapfill method in a lines and space pattern
01/16/2003US20030013269 Device having a high dielectric constant material and a method of manufacture thereof
01/16/2003US20030013268 Fabricating the semiconductor wafer, that reduces dishing over large area features in chemical-mechanical polishing processes. The semiconductor wafer has a substrate with an upper surface, a large area feature formed on the substrate,
01/16/2003US20030013266 Manufacturing method of semiconductor devices
01/16/2003US20030013265 Oxygen barrier for cell container process
01/16/2003US20030013263 Capacitor with high dielectric constant materials and method of making
01/16/2003US20030013262 Method of fabricating an integrated circuit and an integrated circuit with a monocrystalline silicon substrate
01/16/2003US20030013260 Increasing the electrical activation of ion-implanted dopants
01/16/2003US20030013259 Reduction of polysilicon stress in trench capacitors
01/16/2003US20030013258 Photomask esd protection and an anti-esd pod with such protection
01/16/2003US20030013257 Method for manufacturing semiconductor device
01/16/2003US20030013256 Semiconductor device and method for fabricating same
01/16/2003US20030013255 Method of fabricating a self-aligned non-volatile memory cell
01/16/2003US20030013254 Non-volatile semiconductor memory device and manufacturing method thereof
01/16/2003US20030013253 Optimized flash memory cell
01/16/2003US20030013252 Method of forming a cup capacitor
01/16/2003US20030013251 Method for manufacturing a semiconductor device
01/16/2003US20030013250 Nonvolatile memory device and manufacturing method thereof
01/16/2003US20030013249 Semiconductor wafer, semiconductor chip, semiconductor device and method for manufacturing semiconductor device
01/16/2003US20030013248 Method of depositing a tungsten comprising layer over a substrate, method of depositing an elemental tungsten comprising layer over a substrate, method of depositing a tungsten nitride comprising layer over a substrate, method of depositing a tungsten silicide comprising layer over a substrate, and method of forming a transistor gate line over a substrate
01/16/2003US20030013247 Liquid crystal device, liquid crystal display panel and method for manufacturing the same
01/16/2003US20030013245 Semiconductor device and method of fabricating the same
01/16/2003US20030013243 Method of manufacturing field effect transistor
01/16/2003US20030013242 Method for manufacturing a metal oxide semiconductor with a sharp corner spacer
01/16/2003US20030013241 Structure and method for fabricating vertical fet semiconductor structures and devices
01/16/2003US20030013240 Manufacturing method of compound semiconductor device
01/16/2003US20030013239 Method of manufacturing thin film transistor
01/16/2003US20030013237 Method for crystallizing amorphous film and method for fabricating LCD by using the same
01/16/2003US20030013236 Method for manufacturing active matrix substrate
01/16/2003US20030013235 for covering conductive parts without covering semiconductor device; superimposing; dielectrics; stereolithography
01/16/2003US20030013234 Use of diverse materials in air-cavity packaging of electronic devices
01/16/2003US20030013233 Semiconductor device and method for manufacturing the same
01/16/2003US20030013231 Three dimensionals interconnection method and electronic device obtained by same
01/16/2003US20030013229 Semiconductor device and method of manufacturing the same, apparatus for manufacturing semiconductor device, circuit board, and electronic instrument
01/16/2003US20030013228 Method and apparatus for attaching solder members to a substrate
01/16/2003US20030013226 Semiconductor device and process for manufacturing same
01/16/2003US20030013223 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant III-V arsenide nitride substrate used to form the same
01/16/2003US20030013221 Active matrix substrate plate and manufacturing method therefor
01/16/2003US20030013220 Thin films transistors; nonconductor passivation layer covering intakes, drains
01/16/2003US20030013218 Structure and method for fabricating semiconductor structures and devices for detecting chemical reactant
01/16/2003US20030013214 Pulse voltage breakdown (VBD) technique for inline gate oxide reliability monitoring
01/16/2003US20030013213 Exposure system, device production method, semiconductor production factory, and exposure apparatus maintenance method
01/16/2003US20030013212 System and method for removing deposited material from within a semiconductor fabrication device
01/16/2003US20030013211 Mend method for breakage dielectric film
01/16/2003US20030013210 Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same
01/16/2003US20030013100 Nucleic acid reading and analysis system
01/16/2003US20030013045 Integrated circuits, printed circuits; multilayer overcoatings of chromium, copper and polymer; removal zones
01/16/2003US20030013038 Resin which has a polymerization unit derived from p-hydroxystyrene and a polymerization unit having a group unstable against acid, and a dialkanesulfonate of isopropylidenedicyclohexanol
01/16/2003US20030013037 Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
01/16/2003US20030013026 Illumination tools and for detecting the presence of impure matters on the surface of the wafer.
01/16/2003US20030013025 Plurality of mask revision state output circuits and an EXOR circuit.
01/16/2003US20030012984 Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
01/16/2003US20030012965 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
01/16/2003US20030012949 Polymer in which the content of low-molecular components having a molecular weight of 105 or lower is 10% by weight or lower; especially an acrylic polymer obtained by polymerizing monomer(s) in liquid or supercritical carbon dioxide.
01/16/2003US20030012925 Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
01/16/2003US20030012890 Method for producing a plasma by microwave irradiation
01/16/2003US20030012889 Method of treating a substrate
01/16/2003US20030012885 Horizontally transporting vertically oriented wafers into a process cell; carrier is rotated from a horizontal orientation to a vertical orientation; cathode assembly secures the wafer and couples the wafer to a power source
01/16/2003US20030012884 Encapsulation for an electrical component and method for producing the same
01/16/2003US20030012882 Adhesive polyimide resin and adhesive laminate
01/16/2003US20030012881 Process for reducing the resistivity of an electrically conductive layer
01/16/2003US20030012877 Reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polysiloxane on the surface of the semiconductor substrate.
01/16/2003US20030012875 CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below
01/16/2003US20030012869 Pattern forming method and method for manufacturing liquid crystal display device using the same
01/16/2003US20030012868 Method for dispensing flowable substances on microelectronic substrates
01/16/2003US20030012712 Multiple whole wafers to be simultaneously processed while providing flexibility of accommodating different configurations of flowcells
01/16/2003US20030012709 Including recharge container block, pressurization gas block, purge gas block, waste recovery block, vacuum block, solvent supply block, degas block, control block, filtration block; use in electronics, optical fiber, semiconductor manufacturing
01/16/2003US20030012638 Article holders and article positioning methods
01/16/2003US20030012633 Ic handler
01/16/2003US20030012632 Carrying device
01/16/2003US20030012631 High temperature substrate transfer robot