Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2003
01/21/2003US6510074 Ferroelectric memory having a BaTiO3 recording layer oriented in a <111> direction
01/21/2003US6510073 Two transistor ferroelectric non-volatile memory
01/21/2003US6510072 Nonvolatile ferroelectric memory device and method for detecting weak cell using the same
01/21/2003US6509971 Interferometer system
01/21/2003US6509970 Wavelength monitoring apparatus for laser light for semiconductor exposure
01/21/2003US6509960 Generating signal indicative of intensity of emanated light
01/21/2003US6509957 Stage device and exposure apparatus
01/21/2003US6509956 Projection exposure method, manufacturing method for device using same, and projection exposure apparatus
01/21/2003US6509952 Method and system for selective linewidth optimization during a lithographic process
01/21/2003US6509951 Lithographic projection apparatus having a temperature controlled heat shield
01/21/2003US6509942 Liquid crystal display device, wiring substrate, and methods for fabricating the same
01/21/2003US6509759 Multi power supply circuit protection apparatus and method
01/21/2003US6509750 Apparatus for detecting defects in patterned substrates
01/21/2003US6509739 Method for locating defects and measuring resistance in a test structure
01/21/2003US6509650 Electronic device, and method of patterning a first layer
01/21/2003US6509649 Semiconductor device and fabricating method thereof
01/21/2003US6509648 Multilayer semiconductor device
01/21/2003US6509647 Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
01/21/2003US6509643 Tab tape with stiffener and semiconductor device using same
01/21/2003US6509634 Chip mounting structure having adhesive conductor
01/21/2003US6509631 Semiconductor device and liquid crystal module
01/21/2003US6509628 IC chip
01/21/2003US6509627 Flowable germanium doped silicate glass for use as a spacer oxide
01/21/2003US6509626 Conductive device components of different base widths formed from a common conductive layer
01/21/2003US6509625 Guard structure for bipolar semiconductor device
01/21/2003US6509624 Semiconductor fuses and antifuses in vertical DRAMS
01/21/2003US6509623 Microelectronic air-gap structures and methods of forming the same
01/21/2003US6509622 Structures that reduce or prevent damage to integrated circuits.
01/21/2003US6509621 Magnetic random access memory capable of writing information with reduced electric current
01/21/2003US6509619 Detectors
01/21/2003US6509618 Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates
01/21/2003US6509616 Semiconductor device and its manufacturing method
01/21/2003US6509615 Semiconductor device having dynamic threshold transistors and element isolation region and fabrication method thereof
01/21/2003US6509614 TFT-LCD formed with four masking steps
01/21/2003US6509613 Self-aligned floating body control for SOI device through leakage enhanced buried oxide
01/21/2003US6509612 High dielectric constant materials as gate dielectrics (insulators)
01/21/2003US6509611 Method for wrapped-gate MOSFET
01/21/2003US6509609 Grooved channel schottky MOSFET
01/21/2003US6509608 Trench-gate field-effect transistors and their manufacture
01/21/2003US6509607 Semiconductor device with reduced source diffusion distance and method of making same
01/21/2003US6509605 Flash memory cell having a flexible element
01/21/2003US6509604 Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation
01/21/2003US6509602 Nonvolatile memory and manufacturing method thereof
01/21/2003US6509601 Semiconductor memory device having capacitor protection layer and method for manufacturing the same
01/21/2003US6509600 Flash memory cell
01/21/2003US6509599 Trench capacitor with insulation collar and method for producing the trench capacitor
01/21/2003US6509597 Ferroelectric memory device
01/21/2003US6509595 DRAM cell fabricated using a modified logic process and method for operating same
01/21/2003US6509594 Semiconductor memory device having MFMIS transistor and increased data storage time
01/21/2003US6509593 Semiconductor device and method of manufacturing the same
01/21/2003US6509592 Ferroelectric memory
01/21/2003US6509587 Semiconductor device
01/21/2003US6509586 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
01/21/2003US6509583 Semiconductor device formed on insulating layer and method of manufacturing the same
01/21/2003US6509579 Semiconductor device
01/21/2003US6509577 Systems and methods for exposing substrate periphery
01/21/2003US6509572 Charged particle beam lithography apparatus for forming pattern on semi-conductor
01/21/2003US6509571 Proximity exposure method by oblique irradiation with light
01/21/2003US6509568 Electrostatic deflector for electron beam exposure apparatus
01/21/2003US6509546 Laser excision of laminate chip carriers
01/21/2003US6509542 Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
01/21/2003US6509415 Low dielectric constant organic dielectrics based on cage-like structures
01/21/2003US6509386 Porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material/dielectric material composition comprising at least one organic sacrificial material and at least one dielectric
01/21/2003US6509283 Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
01/21/2003US6509282 Silicon-starved PECVD method for metal gate electrode dielectric spacer
01/21/2003US6509281 Techniques for improving adhesion of silicon dioxide to titanium
01/21/2003US6509280 Method for forming a dielectric layer of a semiconductor device
01/21/2003US6509279 Methods for processing a coating film and for manufacturing a semiconductor element
01/21/2003US6509278 Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface
01/21/2003US6509277 Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen
01/21/2003US6509276 Focused ion beam etching of copper with variable pixel spacing
01/21/2003US6509275 Method of manufacturing thin film and pretreating method thereof
01/21/2003US6509274 Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate
01/21/2003US6509273 Method for manufacturing a semiconductor device
01/21/2003US6509272 Positioning pad for contact with wafer surface and planarizing surface using pad and fluid composition including a chelating agent
01/21/2003US6509271 Manufacturing method of semiconductor device
01/21/2003US6509270 Method for polishing a semiconductor topography
01/21/2003US6509269 Elimination of pad glazing for Al CMP
01/21/2003US6509268 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics
01/21/2003US6509267 Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layer
01/21/2003US6509266 Halogen addition for improved adhesion of CVD copper to barrier
01/21/2003US6509265 Process for manufacturing a contact barrier
01/21/2003US6509264 Method to form self-aligned silicide with reduced sheet resistance
01/21/2003US6509263 Method for fabricating a semiconductor memory device having polysilicon with an enhanced surface concentration and reduced contact resistance
01/21/2003US6509262 Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution
01/21/2003US6509261 Wiring forming method
01/21/2003US6509260 Method of shallow trench isolation using a single mask
01/21/2003US6509259 Lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer
01/21/2003US6509258 Etch stop in damascene interconnect structure and method of making
01/21/2003US6509257 Semiconductor device and process for making the same
01/21/2003US6509256 Methods of forming electrically conductive interconnections and electrically interconnected substrates
01/21/2003US6509255 Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same
01/21/2003US6509254 Method of forming electrode structure and method of fabricating semiconductor device
01/21/2003US6509253 T-shaped gate electrode for reduced resistance
01/21/2003US6509252 Method of manufacturing semiconductor device
01/21/2003US6509251 Method of forming a resist pattern for blocking implantation of an impurity into a semiconductor substrate
01/21/2003US6509250 Method for CMOS well drive in a non-inert ambient
01/21/2003US6509249 Method of fabricating shallow trench isolation
01/21/2003US6509248 Fabrication of semiconductor gettering structures by ion implantation
01/21/2003US6509247 Semiconductor device and alignment method