Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2003
02/25/2003US6524881 Method and apparatus for marking a bare semiconductor die
02/25/2003US6524877 Semiconductor device, and method of fabricating the same
02/25/2003US6524876 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
02/25/2003US6524875 Method for manufacturing tapered opening using an anisotropic etch during the formation of a semiconductor device
02/25/2003US6524872 Using fast hot-carrier aging method for measuring plasma charging damage
02/25/2003US6524871 Defect inspection apparatus and defect inspection method
02/25/2003US6524869 Method and apparatus for detecting ion implant induced defects
02/25/2003US6524868 Method for fabricating semiconductor memory device
02/25/2003US6524867 Flowing oxidizer while depositing a first layer of platinum-rhodium alloy on substrate; flowing reducer while depositing second layer of platinum-rhodium alloy on first layer; flowing second oxidizer while forming third alloy layer
02/25/2003US6524772 Method of manufacturing phase grating image sensor
02/25/2003US6524754 Semiconductor photomask having increased durability, improved transmission uniformity, and birefringence properties
02/25/2003US6524753 Method for manufacturing phase shift mask
02/25/2003US6524700 Pressure sensitive adhesive sheet for wafer sticking
02/25/2003US6524657 Using aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, as clean-up solvent or as part of a coating solution for polymeric dielectric materials; microelectronics
02/25/2003US6524651 Making an interfacial template for growing a crystalline metal oxide; vacuum depositing a metal on the Si and/or Ge surface at a high temperature; oxidation by exposure to oxygen at a low partial pressure and temperature
02/25/2003US6524650 Outside air and a gas-phase backward flow do not enter the inside of a reaction chamber while it is opened to the outside through a substrate carrying-in/carrying-out opening
02/25/2003US6524645 Process for the electroless deposition of metal on a substrate
02/25/2003US6524524 Method for making a heat dissipating tube
02/25/2003US6524517 Polymerization of hydrogel solution; solidification
02/25/2003US6524463 Transporting an article-mounted carrier into a process cell horizontally through an inlet opening, performing a process on said planar article and transporting said carrier horizontally out; automatic processing and plating system
02/25/2003US6524455 Sputtering apparatus using passive arc control system and method
02/25/2003US6524432 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
02/25/2003US6524430 Apparatus for fabricating a semiconductor device
02/25/2003US6524429 Method of forming buried wiring, and apparatus for processing substratum
02/25/2003US6524428 Method of holding substrate and substrate holding system
02/25/2003US6524389 Substrate processing apparatus
02/25/2003US6524385 Single crystal SiC composite material for producing a semiconductor device, and a method of producing the same
02/25/2003US6524376 Anticorrosive agent
02/25/2003US6524351 Semiconductor device mounting jig
02/25/2003US6524346 High degree of precision; protective and alignment structures to a substrate
02/25/2003US6524174 Clamp for connecting/disconnecting a rotary head to/from a spindle in apparatus for manufacturing a semiconductor device
02/25/2003US6524168 Composition and method for polishing semiconductors
02/25/2003US6524167 Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
02/25/2003US6524165 Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
02/25/2003US6524164 Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
02/25/2003US6524057 Manual guide vehicle and method for supplying power thereto
02/25/2003US6524051 Wafer positioning device with storage capability
02/25/2003US6523803 Mold apparatus used during semiconductor device fabrication
02/25/2003US6523748 Substrate for exposure, readout method and apparatus for the substrate, exposure apparatus, and method for producing semiconductor devices using the exposure apparatus
02/25/2003US6523734 Covered with a conductive pattern on a surface of a thin resin basic plate to a second wiring board covered with a conductive pattern on a thin resin basic plate to ensure the electric connection steps of putting said first and second
02/25/2003US6523733 Controlled attenuation capillary
02/25/2003US6523701 Elongated rib for cassette and substrate cassette
02/25/2003US6523695 Method and apparatus for operating a vibration isolation system having electronic and pneumatic control systems
02/25/2003US6523557 Megasonic bath
02/25/2003US6523553 Removing material from the edge of a disk. In one embodiment, the edge of the disk is contacted with etchant via an etchant containing swab or trough (which may contain one or more transducers) and is rotated such that successive portions of
02/25/2003US6523552 Facility for treating objects in a process tank
02/25/2003US6523494 Apparatus for depositing low dielectric constant oxide film
02/25/2003US6523493 Ring-shaped high-density plasma source and method
02/25/2003US6523419 Electrode tensile test method and apparatus, substrate/probe support device for electrode tensile test, and electrode-probe bonding device for electrode tensile test
02/25/2003US6523254 Method for gate blocking x-outs during a molding process
02/25/2003US6523249 Mounting method of IC chip and manufacturing method of head suspension assembly with the IC chip
02/25/2003US6523210 Cleaner with cylindrically shaped common tubular body with a plurality of sponge nubs formed in the outer surface, the tubular body being mounted for rotary movement relative to a surface of a wafer to be cleaned, each sponge nub defining a
02/25/2003CA2256699C Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
02/25/2003CA2248386C Liquid dispensing apparatus and method
02/20/2003WO2003015491A1 Apparatus and method for mounting electronic parts
02/20/2003WO2003015490A2 Method for fabricating large area flexible electronics
02/20/2003WO2003015489A2 Apparatus and method for mounting electronic parts
02/20/2003WO2003015485A1 Welded leadframe
02/20/2003WO2003015481A2 Suspended gas distribution manifold for plasma chamber
02/20/2003WO2003015283A2 Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom
02/20/2003WO2003015248A2 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
02/20/2003WO2003015232A1 Active power/ground esd trigger
02/20/2003WO2003015185A1 A method to gaas based lasers and a gaas based laser
02/20/2003WO2003015183A1 Method for manufacturing thin-film structure
02/20/2003WO2003015182A2 Fin field effect transistor and method for producing a fin field effect transistor
02/20/2003WO2003015181A1 Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
02/20/2003WO2003015180A2 Mis device having a trench gate electrode and method of making the same
02/20/2003WO2003015179A2 Mis device having a trench gate electrode and method of making the same
02/20/2003WO2003015178A1 Trench bipolar transistor
02/20/2003WO2003015177A1 Bipolar transistor and method of manufacturing same
02/20/2003WO2003015175A1 Bipolar transistor, semiconductor device and method of manufacturing same
02/20/2003WO2003015173A2 Floating gate memory array and methods of forming
02/20/2003WO2003015172A2 Method of manufacturing a non-volatile memory
02/20/2003WO2003015171A1 Open bit line dram with vertical ultra-thin body transistors
02/20/2003WO2003015170A1 Semiconductor device and its production method
02/20/2003WO2003015165A2 Electronic component with a plastic housing and method for production thereof
02/20/2003WO2003015163A2 Method for the parallel production of an mos transistor and a bipolar transistor
02/20/2003WO2003015162A2 Method for the parallel production of an mos transistor and a bipolar transistor
02/20/2003WO2003015161A2 Method for fabricating a semiconductor product
02/20/2003WO2003015160A2 Dual layer cmos devices
02/20/2003WO2003015159A2 Trench isolation having a self-adjusting surface seal and method for producing one such trench isolation
02/20/2003WO2003015158A1 Die bonder and method for detecting misaligned workpieces
02/20/2003WO2003015157A1 Ceramic joint body
02/20/2003WO2003015156A1 Foup mounting robot for semiconductor efem
02/20/2003WO2003015155A1 Method of manufacturing thin film sheet with bumps and thin film sheet with bumps
02/20/2003WO2003015154A1 Probe card carrier and method of carrying probe card
02/20/2003WO2003015153A2 Process to allow electrical and mechanical connection of an electrical device with a face equipped with contact pads
02/20/2003WO2003015152A2 Method of manufacturing a semiconductor non-volatile memory
02/20/2003WO2003015151A1 Base material treating method and electron device-use material
02/20/2003WO2003015150A1 Plasma curing of msq-based porous low-k film materials
02/20/2003WO2003015149A1 Heat treatment method and heat treatment device
02/20/2003WO2003015148A1 Slurry composition for use in chemical mechanical polishing of metal wiring
02/20/2003WO2003015147A1 Wafer holding ring for chemical and mechanical polisher
02/20/2003WO2003015146A1 Process and apparatus for treating a workpiece such as a semiconductor wafer
02/20/2003WO2003015145A1 Micromachining method using ionbeam
02/20/2003WO2003015144A1 Method and apparatus for doping semiconductors
02/20/2003WO2003015143A1 Group iii nitride semiconductor film and its production method
02/20/2003WO2003015142A2 Formation of planar strained layers
02/20/2003WO2003015141A1 Controlling anti-phase domains in semiconductor structures
02/20/2003WO2003015140A1 Semiconductor substrate, field-effct transistor, and their manufacturing methods
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