Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2003
03/04/2003US6528848 Semiconductor device and a method of manufacturing the same
03/04/2003US6528847 Metal oxide semiconductor device having contoured channel region and elevated source and drain regions
03/04/2003US6528846 Asymmetric high voltage silicon on insulator device design for input output circuits
03/04/2003US6528845 Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
03/04/2003US6528844 Split-gate flash memory cell with a tip in the middle of the floating gate
03/04/2003US6528843 Self-aligned split-gate flash memory cell having a single-side tip-shaped floating-gate structure and its contactless flash memory arrays
03/04/2003US6528841 NAND type flash memory device having dummy region
03/04/2003US6528840 Semiconductor device
03/04/2003US6528839 Semiconductor integrated circuit and nonvolatile memory element
03/04/2003US6528838 Damascene MIM capacitor with a curvilinear surface structure
03/04/2003US6528837 Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
03/04/2003US6528836 Photomask ESD protection and an anti-ESD pod with such protection
03/04/2003US6528835 Titanium nitride metal interconnection system and method of forming the same
03/04/2003US6528834 Dense memory arrays
03/04/2003US6528830 Thin film transistor
03/04/2003US6528829 Integrated circuit structure having a charge injection barrier
03/04/2003US6528828 Differential negative resistance HBT and process for fabricating the same
03/04/2003US6528826 High breakdown voltage
03/04/2003US6528822 High display quality
03/04/2003US6528821 Optimized reachthrough implant for simultaneously forming an MOS capacitor
03/04/2003US6528820 Semiconductor device and method of fabricating same
03/04/2003US6528816 Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
03/04/2003US6528808 Transmitting photoelectric sensor array
03/04/2003US6528807 Method for applying or removing material
03/04/2003US6528806 Charged-particle-beam microlithography apparatus, reticles, and methods for reducing proximity effects, and device-manufacturing methods comprising same
03/04/2003US6528805 Dose monitor for plasma doping system
03/04/2003US6528799 Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
03/04/2003US6528767 Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
03/04/2003US6528760 Apparatus and method using rotational indexing for laser marking IC packages carried in trays
03/04/2003US6528757 Apparatus processing a gate portion in a semiconductor manufacturing apparatus, which remove a gate correspondence portion from a semiconductor package connected to a lead frame, and a resin burr deposited on a lead portion associated with the semiconductor package
03/04/2003US6528751 Plasma reactor with overhead RF electrode tuned to the plasma
03/04/2003US6528722 Ball grid array semiconductor package with exposed base layer
03/04/2003US6528605 Cured coating film excellent in heat resistance, solvent resistance, low dielectric, and mechanical strength; from a 1,2-diethynylbenzene and a dihaloaromatic compound
03/04/2003US6528436 Method of forming silicon nitride layer directly on HSG polysilicon
03/04/2003US6528435 Plasma processing
03/04/2003US6528434 Forming different thickness" of a gate oxide layer simultaneously, by employing a pulse nitrogen plasma implantation
03/04/2003US6528433 Method for monitoring nitrogen processes
03/04/2003US6528432 H2-or H2/N2-plasma treatment to prevent organic ILD degradation
03/04/2003US6528431 Method for fabricating semiconductor integrated circuit drive using an oxygen and hydrogen catalyst
03/04/2003US6528430 Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
03/04/2003US6528429 Methods of etching insulative materials, of forming electrical devices, and of forming capacitors
03/04/2003US6528428 Method of forming dual damascene structure
03/04/2003US6528427 Methods for reducing contamination of semiconductor substrates
03/04/2003US6528426 Integrated circuit interconnect and method
03/04/2003US6528425 Method and apparatus for processing substrate surface with striped ridge patterns
03/04/2003US6528424 Method of electroplating a copper-zinc alloy thin film on a copper surface using a chemical solution
03/04/2003US6528423 Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric material
03/04/2003US6528422 Method to modify 0.25μm 1T-RAM by extra resist protect oxide (RPO) blocking
03/04/2003US6528421 Method for forming silicide
03/04/2003US6528420 Double acting cold trap
03/04/2003US6528419 Process of fabricating an integrated circuit
03/04/2003US6528418 Manufacturing method for semiconductor device
03/04/2003US6528417 Metal patterned structure for SiN surface adhesion enhancement
03/04/2003US6528416 Semiconductor device and method of making utilizing hemispherical grain silicon technology
03/04/2003US6528415 Method of forming a metal line in a semiconductor device
03/04/2003US6528414 Methods for forming wiring line structures in semiconductor devices
03/04/2003US6528413 Semiconductor device and method of manufacturing the same
03/04/2003US6528412 Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect opening
03/04/2003US6528411 Semiconductor device and method of its fabrication
03/04/2003US6528410 Method for manufacturing semiconductor device
03/04/2003US6528409 Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
03/04/2003US6528408 Method for bumped die and wire bonded board-on-chip package
03/04/2003US6528407 Process for producing electrical-connections on a semiconductor package, and semiconductor package
03/04/2003US6528405 Enhancement mode RF device and fabrication method
03/04/2003US6528404 Semiconductor device and fabrication method thereof
03/04/2003US6528403 Fabrication process of a semiconductor integrated circuit device
03/04/2003US6528402 Dual salicidation process
03/04/2003US6528401 Method for fabricating polycide dual gate in semiconductor device
03/04/2003US6528400 Method of manufacturing a semiconductor device
03/04/2003US6528399 MOSFET transistor with short channel effect compensated by the gate material
03/04/2003US6528398 Thinning of trench and line or contact spacing by use of dual layer photoresist
03/04/2003US6528397 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
03/04/2003US6528396 Transistor and method of making the same
03/04/2003US6528395 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device
03/04/2003US6528394 Growth method of gallium nitride film
03/04/2003US6528393 Method of making a semiconductor package by dicing a wafer from the backside surface thereof
03/04/2003US6528392 Dicing configuration for separating a semiconductor component from a semiconductor wafer
03/04/2003US6528391 Controlled cleavage process and device for patterned films
03/04/2003US6528390 Process for fabricating a non-volatile memory device
03/04/2003US6528389 Substrate planarization with a chemical mechanical polishing stop layer
03/04/2003US6528388 Method for manufacturing semiconductor device and ultrathin semiconductor device
03/04/2003US6528387 SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same
03/04/2003US6528386 Protection of tungsten alignment mark for FeRAM processing
03/04/2003US6528385 Method for fabricating a capacitor
03/04/2003US6528384 Method for manufacturing a trench capacitor
03/04/2003US6528383 Simultaneous formation of deep trench capacitor and resistor
03/04/2003US6528382 Semiconductor device and method for fabricating the same
03/04/2003US6528381 Method of forming silicide
03/04/2003US6528379 Method for manufacturing semiconductor integrated circuit device
03/04/2003US6528378 Semiconductor device
03/04/2003US6528377 Semiconductor substrate and method for preparing the same
03/04/2003US6528376 Sacrificial spacer layer method for fabricating field effect transistor (FET) device
03/04/2003US6528375 Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
03/04/2003US6528374 Method for forming dielectric stack without interfacial layer
03/04/2003US6528373 Layered dielectric on silicon carbide semiconductor structures
03/04/2003US6528372 Sidewall spacer definition of gates
03/04/2003US6528371 Method for fabricating semiconductor device
03/04/2003US6528370 Semiconductor device and method of manufacturing the same
03/04/2003US6528369 Layer structure having contact hole and method of producing same
03/04/2003US6528368 Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugs
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