Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2003
08/05/2003US6603321 Method and apparatus for accelerated determination of electromigration characteristics of semiconductor wiring
08/05/2003US6603316 Semiconductor wafer test system
08/05/2003US6603295 Circuit configuration for the generation of a reference voltage
08/05/2003US6603210 Semiconductor module and producing method therefor
08/05/2003US6603209 Compliant integrated circuit package
08/05/2003US6603207 Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device
08/05/2003US6603206 Slot via filled dual damascene interconnect structure without middle etch stop layer
08/05/2003US6603204 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
08/05/2003US6603203 Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
08/05/2003US6603202 Circuit board-providing article, circuit board, semiconductor device and process for the production of the same
08/05/2003US6603198 Semiconductor structure having stacked semiconductor devices
08/05/2003US6603195 Planarized plastic package modules for integrated circuits
08/05/2003US6603194 Outer frame section; a plurality of chip mounting sections which are supported by the outer frame section and on which a plurality of semiconductor chips are mounted; lead sections surrounding the chip mounting sections;connecting and
08/05/2003US6603192 Scratch resistance improvement by filling metal gaps
08/05/2003US6603191 Semiconductor device and method of manufacturing the same
08/05/2003US6603190 Semiconductor device
08/05/2003US6603189 Improving a reverse recovery characteristic of a semiconductor device which solves a technical problem of breakdown voltage reduction which has conventionally caused in enhancing soft recover. To solve the technical problem, in a PN junction
08/05/2003US6603188 Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor
08/05/2003US6603186 Bipolar transistor with base drive circuit protection
08/05/2003US6603181 MOS device having a passivated semiconductor-dielectric interface
08/05/2003US6603180 Semiconductor device having large-area silicide layer and process of fabrication thereof
08/05/2003US6603179 Semiconductor apparatus for improving an operational performance of CMOS (Complementary Metal Oxide Semiconductor) circuits, and a method of manufacturing the same.
08/05/2003US6603178 Semiconductor integrated circuit device and method of manufacture thereof
08/05/2003US6603176 Power semiconductor device for power integrated circuit device
08/05/2003US6603175 Operating circuit with voltage regular circuit having at least a partially depleted soi field effect transistor
08/05/2003US6603174 An Silicon on Insulator substrate comprises a buried oxide film, an SOI layer formed on a first region of the surface of the buried oxide film, and a silicon oxide film (8) formed on a second region (52) of the surface. Formed on the surface
08/05/2003US6603173 Vertical type MOSFET
08/05/2003US6603172 Semiconductor device and method of manufacturing the same
08/05/2003US6603171 Manufacturing of electronic devices, including memory cells, involving forming, on a substrate of semiconductor material, multilayer stacks including a floating gate region, an intermediate dielectric region, and a control gate region,
08/05/2003US6603169 Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same
08/05/2003US6603168 Vertical DRAM device with channel access transistor and stacked storage capacitor and associated method
08/05/2003US6603167 Capacitor with lower electrode located at the same level as an interconnect line
08/05/2003US6603166 Frontside contact on silicon-on-insulator substrate
08/05/2003US6603165 Semiconductor device and method for fabricating the same
08/05/2003US6603164 Integrated semiconductor memory configuration
08/05/2003US6603163 Semiconductor device with capacitor and method of manufacturing thereof
08/05/2003US6603162 Semiconductor integrated circuit device including dummy patterns located to reduce dishing
08/05/2003US6603161 Semiconductor device having ferroelectric capacitor and method for manufacturing the same
08/05/2003US6603160 MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof
08/05/2003US6603159 System and methods for manufacturing and using a mask
08/05/2003US6603158 Semiconductor integrated circuit having high-density base cell array
08/05/2003US6603156 Strained silicon on insulator structures
08/05/2003US6603153 Fast recovery diode and method for its manufacture
08/05/2003US6603145 High temperature circuit apparatus
08/05/2003US6603143 Semiconductor device and method for fabricating same
08/05/2003US6603141 Organic semiconductor and method
08/05/2003US6603131 Charged-particle-beam optical systems and microlithography apparatus comprising a non-absorbing shaping aperture
08/05/2003US6603130 Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses
08/05/2003US6603128 Charged-particle beam exposure apparatus and device manufacturing method
08/05/2003US6603120 Test method of mask for electron-beam exposure and method of electron-beam exposure
08/05/2003US6603117 Self contained sensing apparatus and system
08/05/2003US6603103 Circuit for machine-vision system
08/05/2003US6603101 Heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to
08/05/2003US6603071 Flexible printed circuit board, integrated circuit chip mounting flexible printed circuit board, display apparatus incorporating, integrated circuit chip mounted structure, and bonding method of integrated circuit chip mounting flexible printed circuit board
08/05/2003US6602808 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
08/05/2003US6602807 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
08/05/2003US6602806 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
08/05/2003US6602805 Method for forming gate dielectric layer in NROM
08/05/2003US6602804 Dielectric, polymer blend
08/05/2003US6602803 Direct attachment semiconductor chip to organic substrate
08/05/2003US6602802 Method of forming a porous film on a substrate
08/05/2003US6602801 Method for forming a region of low dielectric constant nanoporous material
08/05/2003US6602800 Forming a thin film on the substrate by plasma reaction while reducing or discharging an electric charge from the substrate surface
08/05/2003US6602799 Method of forming a uniform ultra-thin gate oxide layer
08/05/2003US6602798 Method and apparatus for reducing isolation stress in integrated circuits
08/05/2003US6602797 Wafer processing method
08/05/2003US6602796 Depositing a metal film at a first set of process conditions; and continuing to deposit the metal film at a second set of process conditions that are different from the first set of conditions.
08/05/2003US6602794 Silylation process for forming contacts
08/05/2003US6602793 Pre-clean chamber
08/05/2003US6602792 Method for reducing stress of sidewall oxide layer of shallow trench isolation
08/05/2003US6602789 Method of forming a metal line in a semiconductor memory device
08/05/2003US6602788 Forming barrier layer; then aluminum, germanium, copper alloy
08/05/2003US6602787 Method for fabricating semiconductor devices
08/05/2003US6602786 One-step process for forming titanium silicide layer on polysilicon
08/05/2003US6602785 Method of forming a conductive contact on a substrate and method of processing a semiconductor substrate using an ozone treatment
08/05/2003US6602784 Radical-assisted sequential CVD
08/05/2003US6602783 Deposition of titanium amides
08/05/2003US6602782 Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby
08/05/2003US6602781 Metal silicide gate transistors
08/05/2003US6602780 Method for protecting sidewalls of etched openings to prevent via poisoning
08/05/2003US6602779 Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer
08/05/2003US6602778 Apparatus and methods for coupling conductive leads of semiconductor assemblies
08/05/2003US6602775 Method to improve reliability for flip-chip device for limiting pad design
08/05/2003US6602774 Selective salicidation process for electronic devices integrated in a semiconductor substrate
08/05/2003US6602773 Methods of fabricating semiconductor devices having protected plug contacts and upper interconnections
08/05/2003US6602772 Method for non-contact stress evaluation of wafer gate dielectric reliability
08/05/2003US6602771 Method for fabricating semiconductor device
08/05/2003US6602770 Silicon layer to improve plug filling by CVD
08/05/2003US6602769 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same
08/05/2003US6602768 MOS-gated power device with doped polysilicon body and process for forming same
08/05/2003US6602767 Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
08/05/2003US6602765 Fabrication method of thin-film semiconductor device
08/05/2003US6602764 Methods of fabricating gallium nitride microelectronic layers on silicon layers
08/05/2003US6602763 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
08/05/2003US6602762 System and method of laser sintering dies and dies sintered by laser sintering
08/05/2003US6602761 Process for production of SOI substrate and process for production of semiconductor device
08/05/2003US6602760 Method of producing a semiconductor layer on a substrate
08/05/2003US6602759 Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysilicon
08/05/2003US6602758 Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing
08/05/2003US6602757 Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI