Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2003
11/06/2003US20030205780 High voltage resistive structure integrated on a semiconductor substrate
11/06/2003US20030205777 Integrated fuse with regions of different doping within the fuse neck
11/06/2003US20030205776 Non-volatile semiconductor memory device and its manufacturing method
11/06/2003US20030205775 Low- voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
11/06/2003US20030205774 Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
11/06/2003US20030205772 Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
11/06/2003US20030205770 Mask read only memory device and fabrication method thereof
11/06/2003US20030205769 Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device
11/06/2003US20030205767 Dual metal gate CMOS devices
11/06/2003US20030205766 Particularly effective when applied to a semiconductor integrated circuit device having Static Random Access Memory.
11/06/2003US20030205765 Semiconductor device and method for manufacturing the same
11/06/2003US20030205764 Structure of two-bit mask read-only memory device and fabricating method thereof
11/06/2003US20030205761 Bi-directional silicon controlled rectifier for electrostatic discharge protection
11/06/2003US20030205760 Method of manufacturing SOI element having body contact
11/06/2003US20030205759 Reduction of parasitic bipolar leakage current in silicon on insulator devices
11/06/2003US20030205758 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
11/06/2003US20030205756 Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
11/06/2003US20030205755 Substrate, a floating gate, a control gate, a tunnel layer, a first doping region, and a second doping region; increasing the integration of ICs by decreasing the lateral dimension of the memory cell.
11/06/2003US20030205754 Dynamic electrically alterable programmable read only memory device
11/06/2003US20030205753 Non-volatile semiconductor memory device
11/06/2003US20030205752 Semiconductor integrated circuits and fabricating method thereof
11/06/2003US20030205750 Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
11/06/2003US20030205749 Localized masking for semiconductor structure development
11/06/2003US20030205748 DRAM cell structure capable of high integration and fabrication method thereof
11/06/2003US20030205747 Self-aligned source pocket for flash memory cells
11/06/2003US20030205746 Semiconductor device and method for fabricating the same
11/06/2003US20030205745 DRAM cell having independent and asymmetric source/drain and method of forming the same
11/06/2003US20030205744 TaON glue layer over a semiconductor substrate, and a lower electrode on the TaON glue layer; ferroelectric film on the lower electrode, and an upper electrode is on the film
11/06/2003US20030205743 Sputtering a target containing Pb, Zr, Ti, Ca and Sr to form a PZT ferroelectric film; annealing in an inert atmosphere containing O2; annealing in a second oxidizing atmosphere; and depositing strontium ruthanate
11/06/2003US20030205742 Single transistor ferroelectric transistor structure with high-k insulator
11/06/2003US20030205741 Multi-trench region for accumulation of photo-generated charge in a CMOS imager
11/06/2003US20030205740 Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof
11/06/2003US20030205738 Semiconductor device having ferroelectric capacitor and method for manufacturing the same
11/06/2003US20030205735 Semiconductor device and a process for producing same
11/06/2003US20030205734 Methods of forming ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof
11/06/2003US20030205733 Method of fabricating a semiconductor component
11/06/2003US20030205732 Microelectronic die including low RC under-layer interconnects
11/06/2003US20030205731 Semiconductor integrated circuit device and manufacturing method thereof
11/06/2003US20030205730 Semiconductor device and method for manufacturing the same, semiconductor wafer and semiconductor device manufactured thereby
11/06/2003US20030205729 MIM capacitor with metal nitride electrode materials and method of formation
11/06/2003US20030205728 Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure and fabrication method thereof
11/06/2003US20030205727 Flash memory device and a method for fabricating the same
11/06/2003US20030205725 Semiconductor device and its manufacturing method
11/06/2003US20030205724 Device comprising substrate, film on substrate consisting essentially of pb3geo5 phase lead germanium oxide, and conductive electrode overlaying film
11/06/2003US20030205723 Metal-to-metal antifuse employing carbon-containing antifuse material
11/06/2003US20030205722 Semiconductor device
11/06/2003US20030205721 Insulating oxide film formed in a peripheral portion of said active region on said substrate by oxidizing the nitride
11/06/2003US20030205720 High-resistivity metal in a phase-change memory cell
11/06/2003US20030205719 Semiconductor device and power amplifier using the same
11/06/2003US20030205717 Substrate having an upper face that is misaligned from a main crystal plane of said substrate at least 0.05 degrees ; base layer having a thickness exceeding about 5.5 micrometers; III-Nitride light emitting region above base layer
11/06/2003US20030205716 Semiconductor substrates and structures
11/06/2003US20030205712 Semiconductor LED flip-chip with dielectric coating on the mesa
11/06/2003US20030205711 N-type nitride semiconductor laminate and semiconductor device using same
11/06/2003US20030205705 II-VI Semiconductor device with BeTe buffer layer
11/06/2003US20030205699 Black composite particles for semiconductor sealing material, and semiconductor sealing material using the same
11/06/2003US20030205689 Aqueous mixture of chlorine- and fluorine-containing chemicals, especially hydrofluoric acid and potassium hypochlorite; the mixture reacts with the ruthenium silicide to produce water-soluble reaction products.
11/06/2003US20030205683 Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
11/06/2003US20030205669 Apparatus and method for secondary electron emission microscope
11/06/2003US20030205664 Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
11/06/2003US20030205628 Nozzle for ejecting molten metal
11/06/2003US20030205607 Bump joining method
11/06/2003US20030205604 Being capable of obtaining, at a time of the parting, a parting line being vertical to a face on which a scribe line is formed, thus enabling prevention of failure in the parting.
11/06/2003US20030205563 Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site
11/06/2003US20030205559 Apparatus and method for single substrate processing
11/06/2003US20030205557 Apparatus and method for controlling the voltage applied to an electrostatic shield used in a plasma generator
11/06/2003US20030205553 Process for treating solid surface and substrate surface
11/06/2003US20030205532 Method for purifying semiconductor gases
11/06/2003US20030205483 Method for fabricating trench capacitors for large scale integrated semiconductor memories
11/06/2003US20030205480 Anodizing method and apparatus and semiconductor substrate manufacturing method
11/06/2003US20030205478 Object plating method and system
11/06/2003US20030205461 Removable modular cell for electro-chemical plating
11/06/2003US20030205404 Composite sheet and process for producing the same
11/06/2003US20030205328 Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
11/06/2003US20030205327 Apparatus and methods for minimizing arcing in a plasma processing chamber
11/06/2003US20030205326 Semiconductor processing apparatus and a diagnosis method therefor
11/06/2003US20030205324 Wafer holder with stiffening rib
11/06/2003US20030205274 Semiconductor component manufacturing plant with ventilated false floor
11/06/2003US20030205254 Method for processing the surface of a workpiece
11/06/2003US20030205253 Single wafer type substrate cleaning method and apparatus
11/06/2003US20030205249 Removes the polymer residue and the metal oxide; reduces the via resistance and prevents erosion of the metal layer; and prevents further damage on the profile of the dual damascene.
11/06/2003US20030205241 An organic acid ammonium (NH4) salt added to a mixed solution of ammonium hydroxide, hydrogen peroxide and water.
11/06/2003US20030205240 For cleaning of semiconductor wafers
11/06/2003US20030205239 Chemical mechanical polishing pad pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk.
11/06/2003US20030205238 Reciprocating megasonic probe
11/06/2003US20030205237 Method of cleaning processing chamber of semiconductor processing apparatus
11/06/2003US20030205221 Method for cutting thin film filter work pieces
11/06/2003US20030205202 Plasma cvd device
11/06/2003US20030205197 Apparatus and process for precise encapsulation of flip chip interconnects
11/06/2003US20030205196 Substrate processing apparatus and substrate processing method
11/06/2003US20030205195 Group III nitride compound semiconductor device and producing method therefor
11/06/2003US20030205194 Process for manufacturing a semiconductor device
11/06/2003US20030205193 Method for achieving low defect density aigan single crystal boules
11/06/2003US20030205192 Film forming method
11/06/2003US20030205191 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
11/06/2003US20030205168 Chemical vapor deposition method and related material
11/06/2003DE20220316U1 Device for producing chlorine trifluoride for etching semiconductor substrates comprises a plasma reactor, plasma generating units for forming a plasma inside the reactor, and gas feeding for introducing gases into the reactor
11/06/2003DE10212610C1 Producing horizontal insulation layer on conducting material in trench, deposits insulant layer over trench- and sidewall structures, followed by controlled removal
11/06/2003CA2484227A1 Low input capacitance electrostatic discharge protection circuit utilizing feedback
11/06/2003CA2483009A1 Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
11/05/2003EP1359667A2 Low-impedance decoupling device
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