Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2013
11/14/2013US20130299953 Method for lower thermal budget multiple cures in semiconductor packaging
11/14/2013US20130299952 Method for manufacturing a semiconductor device and a semiconductor device
11/14/2013US20130299950 Semiconductor structure with buried through substrate vias
11/14/2013US20130299949 Through Silicon Via and Method of Forming the Same
11/14/2013US20130299947 Passivated test structures to enable saw singulation of wafer
11/14/2013US20130299946 Substrate treating method, stack and semiconductor device
11/14/2013US20130299944 Methods and Apparatus for Bipolar Junction Transistors and Resistors
11/14/2013US20130299942 Capacitor and method for fabricating the same
11/14/2013US20130299940 Beol anti-fuse structures for gate last semiconductor devices
11/14/2013US20130299939 Chip identification pattern and method of forming
11/14/2013US20130299922 Integrated circuit and method for fabricating the same having a replacement gate structure
11/14/2013US20130299919 MOS Devices with Mask Layers and Methods for Forming the Same
11/14/2013US20130299913 Device and methods for high-k and metal gate stacks
11/14/2013US20130299912 Semiconductor device having high-k gate insulation films and fabricating method thereof
11/14/2013US20130299910 Strained-channel semiconductor device fabrication
11/14/2013US20130299905 Butted contact shape to improve sram leakage current
11/14/2013US20130299899 Power Semiconductor Devices and Methods
11/14/2013US20130299898 Power mosfet structure and method
11/14/2013US20130299897 Inverted thin channel mosfet with self-aligned expanded source/drain
11/14/2013US20130299895 Iii-v compound semiconductor device having dopant layer and method of making the same
11/14/2013US20130299885 Finfet and method for manufacturing the same
11/14/2013US20130299884 Memory device and method for manufacturing memory device
11/14/2013US20130299883 Printed transistor and fabrication method
11/14/2013US20130299882 Method and system for a gan vertical jfet with self-aligned source metallization
11/14/2013US20130299876 Method For Improving Selectivity Of EPI Process
11/14/2013US20130299875 Semiconductor device and manufacturing method
11/14/2013US20130299874 Tmah recess for silicon germanium in positive channel region for cmos device
11/14/2013US20130299873 Method and system for a gan vertical jfet with self-aligned gate metallization
11/14/2013US20130299871 Lateral transistor on polymer
11/14/2013US20130299850 Active matrix substrate, display device, method for inspecting the active matrix substrate, and method for inspecting the display device
11/14/2013US20130299848 Semiconductor Packages and Methods of Formation Thereof
11/14/2013US20130299845 Semiconductor device, semiconductor device module and method of fabricating semiconductor device
11/14/2013US20130299840 Schottky barrier diode and manufacturing method thereof
11/14/2013US20130299839 Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof
11/14/2013US20130299832 Semiconductor device and method of fabricating the same
11/14/2013US20130299828 Via chains for defect localization
11/14/2013US20130299772 Heavily doped semiconductor nanoparticles
11/14/2013US20130299764 Localized device
11/14/2013US20130299605 Compression member for use in showerhead electrode assembly
11/14/2013US20130299464 Methods and Apparatus for Ex Situ Seasoning of Electronic Device Manufacturing Process Components
11/14/2013US20130299386 Device and method for aligning and holding a plurality of singulated semiconductor components in receiving pockets of a terminal carrier
11/14/2013US20130299384 Front opening wafer container with wafer cushion
11/14/2013US20130299354 Electrochemical processor
11/14/2013US20130299098 Manufacturing method for semiconductor integrated device
11/14/2013US20130299091 Plasma processing apparatus
11/14/2013US20130299089 Low-k damage avoidance during bevel etch processing
11/14/2013US20130299088 Laser and plasma etch wafer dicing using water-soluble die attach film
11/14/2013US20130299080 Method for permanent bonding of wafers
11/14/2013US20130298985 Microelectronic structures including cuprous oxide semiconductors and having improved p-n heterojunctions
11/14/2013US20130298984 Passivation of silicon surfaces using intermediate ultra-thin silicon oxide layer and outer passivating dielectric layer
11/14/2013US20130298977 Method of forming an array of nanostructures
11/14/2013US20130298942 Etch remnant removal
11/14/2013US20130298940 Purging of porogen from uv cure chamber
11/14/2013US20130298393 Selective Leadframe Planishing
11/14/2013DE19956550B4 Trimmschaltung für systemintegrierte Schaltung Trimming circuit for system integrated circuit
11/14/2013DE19800574B4 Mikromechanisches Bauelement Micromechanical component
11/14/2013DE112012000788T5 Verfahren zum Herstellen eines Siliziumwafers A method for manufacturing a silicon wafer
11/14/2013DE112012000726T5 Suszeptor und Verfahren zum Herstellen eines Epitaxialwafers unter Verwendung desselben Of the same susceptor and method for producing an epitaxial wafer using
11/14/2013DE112012000717T5 Halbleitereinheit, die Bereiche mit hohen Feldern beinhaltet, sowie zugehöriges Verfahren Semiconductor unit, which includes areas with high fields, and associated method
11/14/2013DE112012000662T5 Polierzusammensetzung und Polierverfahren unter Verwendung derselben Polishing composition and polishing method using the same
11/14/2013DE112011104880T5 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
11/14/2013DE112004000152B4 Magnetspeicher und Schreibstrom-Treiberschaltung The magnetic memory write current and driving circuit
11/14/2013DE102013208490A1 Werkstückteilungsverfahren Workpiece dividing method
11/14/2013DE102013208352A1 Waferbearbeitungsverfahren Wafer processing method
11/14/2013DE102013208350A1 Herstellungsverfahren für einen kühler Manufacturing method for a radiator
11/14/2013DE102013208317A1 Verfahren zum Ausbilden einer Leitung, Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A method for forming a line, the semiconductor device and method of manufacturing a semiconductor device
11/14/2013DE102013104952A1 Halbleiterpackages und Verfahren zu deren Ausbildung Semiconductor packages and methods of training
11/14/2013DE102013103966A1 Kontaktstrukturen für Verbindungshalbleitervorrichtungen Contact structures for compound semiconductor devices
11/14/2013DE102013007685A1 Siliziumkarbid-halbleiterbauelement und verfahren zu dessen herstellung Silicon carbide semiconductor device and process for its preparation
11/14/2013DE102012208033A1 Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung Hybrid integrated component and method for its production
11/14/2013DE102012208031A1 +Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung + Hybrid integrated component and method for its production
11/14/2013DE102012207969A1 Light source device e.g. LED has light source cover whose specific side portion is clouded, melted and partially removed, so that predetermined target light intensity and/or target radiation level are adjusted
11/14/2013DE102012207764A1 Method for boron doping silicon wafers in zone oven, involves diffusing boron from borosilicate glass layer in silicon wafer, cooling diffusion chamber at defined removal temperature, and removing silicon wafer out of chamber
11/14/2013DE102012207652A1 Zweistufiges Verfahren zum Fügen eines Halbleiters auf ein Substrat mit Verbindungsmaterial auf Silberbasis Two-stage process for joining a semiconductor on a substrate having bonding material based on silver
11/14/2013DE102012207593A1 Producing components, comprises applying molding material comprising recesses, on lead frame, providing predetermined breaking points between recesses, separating connecting lines intersecting breaking points, and breaking molding material
11/14/2013DE102012108666B3 Vorrichtung und Verfahren für ein Carbon Nanotube-Interconnect mit niedrigem Übergangswiderstand Apparatus and method for a carbon nanotube interconnect with low contact resistance
11/14/2013DE102012104903A1 Verfahren zum Herstellen von Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Metall-Keramik-Substrat A method for producing metal-ceramic substrates and manufactured by this process the metal-ceramic substrate
11/14/2013DE102012104011A1 Surface suction gripper for gripping planar workpiece e.g. silicon wafer used in photovoltaic device, has suction plate that is provided on workpiece side facing concave recess which is provided with aperture
11/14/2013DE102012008907A1 Rhodiumlegierung zur Herstellung eines Drahts für Prüfnadeln Rhodium alloy for producing a wire for test needles
11/14/2013DE102010038746B4 Verfahren zum Reduzieren der Topographie in Isolationsgebieten eines Halbleiterbauelements durch Anwenden einer Abscheide/Ätzsequenz vor der Herstellung des Zwischenschichtdielektrikums A method of reducing topography in insulation regions of a semiconductor device by applying a deposition / etch sequence before making the interlayer dielectric
11/14/2013DE102010037319B4 Solarzelle mit verbesserter Rückseitenmetallisierungsschicht Solar cell with improved Rückseitenmetallisierungsschicht
11/13/2013EP2662897A1 Method for manufacturing semiconductor device
11/13/2013EP2662896A2 Semiconductor layer structure
11/13/2013EP2662893A1 Semiconductor device and manufacturing method thereof
11/13/2013EP2662889A1 Aluminium coated copper ribbon
11/13/2013EP2662888A1 Methods for protecting a die surface with photocurable materials
11/13/2013EP2662887A1 Semiconductor element and method for producing same
11/13/2013EP2662886A1 Method for producing semiconductor device
11/13/2013EP2662885A1 A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
11/13/2013EP2662884A1 Group 13 nitride semiconductor device and method of its manufacture
11/13/2013EP2662883A1 Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
11/13/2013EP2662882A1 Semiconductor element and method for producing same
11/13/2013EP2662881A2 Energy-saving silencer assembly, a semiconductor manufacturing vacuum pump with same and method for heating nitrogen gas
11/13/2013EP2662728A1 Lithography system, method of clamping and wafer table
11/13/2013EP2662727A2 Compound for resist and radiation-sensitive composition
11/13/2013EP2662427A2 Chemical mechanical polishing composition having chemical additives and methods for using same
11/13/2013EP2662426A1 Metal ion-containing cmp composition and method for using the same
11/13/2013EP2661769A2 Methods and systems for improved localized feature quantification in surface metrology tools
11/13/2013EP2661768A2 Method of making a semiconductor component comprising a lateral resistive region
11/13/2013EP2661598A1 Cooling system and method for cooling a heat generating unit
1 ... 426 427 428 429 430 431 432 433 434 435 436 437 438 439 440 441 442 443 444 445 446 ... 6590