Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2014
09/25/2014US20140284627 Wafer and method of fabricating the same
09/25/2014US20140284623 Semiconductor device and method of manufacturing the same
09/25/2014US20140284622 Semiconductor device and method of manufacturing the same
09/25/2014US20140284621 Semiconductor device and method of manufacturing the same
09/25/2014US20140284618 Semiconductor device and method of fabricating the same
09/25/2014US20140284615 Method for manufacturing a silicon carbide device and a silicon carbide device
09/25/2014US20140284609 Method and Substrate for Thick III-N Epitaxy
09/25/2014US20140284608 Laser annealing apparatus and method, and display apparatus manufactured by this method
09/25/2014US20140284606 Method of fabricating pixel structure and pixel structure thereof
09/25/2014US20140284597 Oxide semiconductor film and method for forming oxide semiconductor film
09/25/2014US20140284595 Semiconductor device and manufacturing method of the same
09/25/2014US20140284510 Compositions containing chlorfluoroolefins or fluoroolefins
09/25/2014US20140284306 Method for manufacturing porous structure and method for forming pattern
09/25/2014US20140284217 Minimizing plating stub reflections in a chip package using capacitance
09/25/2014US20140283994 Apparatus for treating surfaces of wafer-shaped articles
09/25/2014US20140283992 Substrate processing apparatus
09/25/2014US20140283991 Wafer Edge Protector
09/25/2014US20140283937 Electro control modulator valve and semiconductor production apparatus using the same
09/25/2014US20140283935 Collector for use with an apparatus for treating wafer-shaped articles
09/25/2014US20140283901 Nanostructure, nanostructure fabrication method, and photovoltaic cell incorporating a nanostructure
09/25/2014US20140283887 Substrate processing apparatus
09/25/2014US20140283886 Substrate processing method and substrate processing system for performing the same
09/25/2014US20140283884 Systems and methods for drying a rotating substrate
09/25/2014US20140283882 Substrate processing method
09/25/2014US20140283750 Batch-type vertical substrate processing apparatus and substrate holder
09/25/2014US20140283736 Vapor phase growth apparatus and vapor phase growth method
09/25/2014US20140283534 Plasma processing apparatus and plasma processing method
09/25/2014DE112012005422T5 Verfahren zum Bilden von Verdünnt-Nitrid-Materialien zur Verwendung in fotoaktiven Vorrichtungen und zugehörige Strukturen A method of forming Thinned nitride materials for use in photo-active devices and associated structures
09/25/2014DE112012005397T5 Verfahren zur Herstellung von verdünnten Nitrid-Halbleitermaterialien zur Verwendung in photoaktiven Vorrichtungen und verwandten Strukturen A process for the preparation of dilute nitride semiconductor materials for use in photoactive devices, and related structures
09/25/2014DE112012004930T5 Kontaktstrukturen für Halbleitertransistoren Contact structures for semiconductor transistors
09/25/2014DE112012003499T5 Depositionssystem mit Zugangstoren sowie Verfahren dafür Deposition system with access gates and method therefor
09/25/2014DE112011105978T5 Gruppe III-N-Transistoren für Ein-Chip-System-(SOC-)Architektur mit Stromverwaltung und Hochfrequenzschaltungen Group III-N transistors for single-chip system (SOC) architecture with power management and high-frequency circuits
09/25/2014DE112011105973T5 Halbleitervorrichtung mit metallischen Quellen- und Senkenregionen A semiconductor device with metallic source and drain regions
09/25/2014DE112011105972T5 III-V Schichten fir N-Typ- und P-Typ-MOS-Source/Drain-Kontakte III-V layers fir N-type and P-type MOS source / drain contacts
09/25/2014DE112011105970T5 CMOS-Implementierung aus Germanium und lll-V-Nanodrähten und -Nanobändern in Gate-Rundum-Architektur CMOS implementation of germanium and III-V nanowires and -Nanobändern in gate-all-around architecture
09/25/2014DE112011105965T5 Transistoren mit verformtem Kanalbereich unter Verwendung von Source- und Drain-Spannungserzeugern und System mit denselben Transistors with channel deformed area using source and drain voltage generators and system using the same
09/25/2014DE112011105945T5 Gruppe III-N Nanodraht-Transistoren Group III-N nanowire transistors
09/25/2014DE112011105925T5 Dielektrische Zwischenschicht für nichtplanare Transistoren Interlayer dielectric for non-planar transistors
09/25/2014DE10250875B4 Vorrichtung und Verfahren zum Konfigurieren einer integrierten Schaltung mit eingebettetem Speicher Apparatus and method for configuring an integrated circuit with embedded memory
09/25/2014DE102014104108A1 Grabenelektrodenanordnung Grave electrode assembly
09/25/2014DE102014104103A1 Verfahren und Substrat für dicke III-N-Epitaxieschichten A method and substrate for thick III-N-epitaxial layers
09/25/2014DE102014103773A1 Mehrchip-Halbleiter-Leistungsbauelement A multi-chip semiconductor power component
09/25/2014DE102014003068A1 Verfahren zur herstellung eines bildgebers und einer bildgebervorrichtung A method for manufacturing an image sensor and an imaging device
09/25/2014DE102013213838A1 Verfahren zum Polieren eines Substrates aus Halbleitermaterial A method for polishing a substrate of semiconductor material
09/25/2014DE102013205138A1 Halbleiterbauelement, Halbleitermodul sowie Verfahren zur Herstellung eines Halbleiterbauelements und eines Halbleitermoduls A semiconductor device, semiconductor module, and method of manufacturing a semiconductor device and a semiconductor module
09/25/2014DE102013205042A1 Verfahren und Vorrichtung zur Bestimmung von Materialparametern, insbesondere der Ladungsträgerlebensdauer eines Halbleitersubstrates durch Messung von Lumineszenzstrahlung Method and apparatus for determining material parameters, in particular the charge carrier lifetime of a semiconductor substrate by measuring luminescence
09/25/2014DE102013204926A1 Vorrichtung zum Schutz einer Elektrodendichtung in einem Reaktor zur Abscheidung von polykristallinem Silicium Device for protecting an electrode in a seal reactor for deposition of polycrystalline silicon
09/25/2014DE102013204883A1 Verfahren zur Kontaktierung eines elektrischen und/oder elektronischen Bauelements und korrespondierendes Elektronikmodul A method of contacting an electrical and / or electronic component and corresponding electronics module
09/25/2014DE102013204839A1 Verfahren zum Polieren einer Scheibe aus Halbleitermaterial A method of polishing a wafer of semiconductor material
09/25/2014DE102013204830A1 Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium Method and apparatus for treating a semiconductor wafer with an etching medium
09/25/2014DE102013204828A1 Rückseitenkontaktiertes Halbleiterbauelement und Verfahren zu dessen Herstellung Back-contacted semiconductor device and process for its preparation
09/25/2014DE102013204804A1 Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung Sensor device and method of manufacturing a sensor device
09/25/2014DE102013103875B3 Hubeinrichtung Lifting device
09/25/2014DE102013102819A1 Kameramodul sowie Verfahren zur Herstellung Camera module and methods for preparing
09/25/2014DE102011080066B4 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
09/25/2014DE102010060229B4 Halbleitervorrichtung mit Halbleiterzonen, Herstellungsverfahren hierfür und Integrierte Schaltung A semiconductor device comprising semiconductor zones, manufacturing method thereof and Integrated circuit
09/25/2014DE102010038910B4 Halbleitervorrichtung mit Durchgangselektrode und Herstellungsverfahren A semiconductor device having through-electrode and production method
09/25/2014DE102010021764B4 Verfahren zur Niedertemperatur Drucksinterverbindung zweier Verbindungspartner Method for low temperature pressure sintering connection of two link partners
09/25/2014DE102009035920B4 Halbleiterbauelement, Baugruppe und Verfahren zum Herstellen des Halbleiterbauelements A semiconductor device assembly and method of manufacturing the semiconductor device
09/25/2014DE102008049193B4 Niederinduktive Leistungshalbleiteranordnung The low-power semiconductor device
09/25/2014DE102008046724B4 Halbleitervorrichtung Semiconductor device
09/25/2014DE102008037835B4 Elektronische Komponente mit Pufferschicht, Herstellungsverfahren dafür und Halbleiteranordnung mit Puffermitteln Electronic component having a buffer layer, manufacturing method thereof, and semiconductor device comprising buffer means
09/25/2014DE102008011648B4 SIC-Halbleitervorrichtung und Verfahren zu deren Fertigung SiC semiconductor device, and methods for their production
09/25/2014DE102007023563B4 Integriertes Sensorelement mit Plasmon-Polariton-Resonanz-Effekt, zugehöriger integrierter Farbsensor sowie zugehöriges Herstellungsverfahren Integrated sensor element with plasmon-polariton resonance effect, associated integrated color sensor and manufacturing method thereof
09/24/2014EP2782140A1 Semiconductor device
09/24/2014EP2782137A1 Method for manufacturing semiconductor device, and semiconductor device
09/24/2014EP2782130A1 High-voltage-resistance semiconductor device
09/24/2014EP2782129A2 Substrate processing device and substrate processing method
09/24/2014EP2782128A2 Substrate processing device and substrate processing method
09/24/2014EP2782127A2 Substrate processing device and substrate processing method
09/24/2014EP2782126A1 Member for semiconductor manufacturing apparatuses
09/24/2014EP2782125A1 Wafer-related data management method and wafer-related data creation device
09/24/2014EP2782124A1 Power semiconductor mounting
09/24/2014EP2782123A1 Transfer substrate for forming metal wiring line and method for forming metal wiring line by means of said transfer substrate
09/24/2014EP2782122A2 Manufacturing method of JFET semiconductor device and JFET semiconductor device
09/24/2014EP2782121A1 Semiconductor device and method for manufacturing semiconductor device
09/24/2014EP2782120A1 Etching method
09/24/2014EP2782119A1 Method for locally modifying the strains in a SOI substrate, in particular a FD SOI substrate and corresponding device
09/24/2014EP2782118A1 Method for forming a stressed silicon layer
09/24/2014EP2782117A1 SiC epitaxial wafer and semiconductor device
09/24/2014EP2781630A1 Electrochemical deposition chamber
09/24/2014EP2781619A1 Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target
09/24/2014EP2781550A1 Self-organization composition for pattern formation and pattern formation method
09/24/2014EP2781528A1 Curable composition, composition for application, cured film, laser processing method, and manufacturing method for multi-layer wiring structure
09/24/2014EP2781504A1 Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern
09/24/2014EP2781501A1 Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern
09/24/2014EP2780944A1 Memory cells, integrated devices, and methods of forming memory cells
09/24/2014EP2780940A2 Semiconductor die assemblies with enhanced thermal management, semiconductor devices including same and related methods
09/24/2014EP2780937A1 Method of forming self -aligned contacts and local interconnects
09/24/2014EP2780936A1 Micro device transfer head heater assembly and method of transferring a micro device
09/24/2014EP2780935A2 Removal of selected portions of protective coatings from substrates
09/24/2014EP2780934A1 Micro device transfer head
09/24/2014EP2780933A1 Method of transferring a micro device
09/24/2014EP2780932A1 Laser scribing systems, apparatus, and methods
09/24/2014EP2780931A2 Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure
09/24/2014EP2780679A1 High throughput hot testing method and system for high brightness light emitting diodes
09/23/2014US8843875 Measurement model optimization based on parameter variations across a wafer
09/23/2014US8843859 Layout content analysis for source mask optimization acceleration
09/23/2014US8842710 Process for producing semiconductor device and semiconductor device
09/23/2014US8842440 Printed circuit board and method of manufacturing printed circuit board
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