H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2011
12/15/2011	US20110303915 Compressively Stressed FET Device Structures
12/15/2011	US20110303913 Semiconductor device and method for manufacturing the same
12/15/2011	US20110303912 Methods Of Manufacturing P-Type Zn Oxide Nanowires And Electronic Devices Including P-Type Zn Oxide Nanowires
12/15/2011	US20110303910 Field Effect Transistor
12/15/2011	US20110303899 Graphene deposition
12/15/2011	US20110303890 Electrically Actuated Device
12/15/2011	US20110303451 Multilayer printed wiring board
12/15/2011	US20110303364 Plasma processing apparatus
12/15/2011	US20110303362 Plasma processing apparatus and processing gas supply structure thereof
12/15/2011	US20110303291 Formation of thin layers of semiconductor materials
12/15/2011	US20110303265 Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
12/15/2011	US20110303153 Device and method for fabricating thin films by reactive evaporation
12/15/2011	DE112004002236B4 Herstellungsverfahren einer elektronischen Komponente Manufacturing process of an electronic component
12/15/2011	DE102011076272A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
12/15/2011	DE102011075365A1 Halbleitervorrichtung und Herstellungsverfahren hierfür A semiconductor device and manufacturing method thereof
12/15/2011	DE102011015404A1 Verfahren zur Herstellung einer stegartigen Halbleiterbaustruktur A process for producing a web-like Halbleiterbaustruktur
12/15/2011	DE102011005528A1 Organische lichtemittierende anzeigevorrichtung und herstellungsverfahren dafür An organic light emitting display device and production method thereof
12/15/2011	DE102011001402A1 Halbleiter-Bauelement und Herstellungsverfahren Semiconductor device and manufacturing method
12/15/2011	DE102010029939A1 Verfahren und Vorrichtung zum Kontaktieren eines Halbleitersubstrates mittels eines Strahldruckverfahrens Method and apparatus for contacting a semiconductor substrate by means of a jet printing method
12/15/2011	DE102010023343A1 Strahlungsemittierender Halbleiterkörper, Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterkörpers und strahlungsemittierendes Halbleiterbauelement Radiation-emitting semiconductor body, method for manufacturing a radiation-emitting semiconductor body and a radiation-emitting semiconductor component
12/15/2011	DE102010023221A1 Producing photovoltaic modules useful for converting sunlight into electrical energy, comprises string-ribbon-method, post treatment of the string-ribbon-wafers, and producing the photovoltaic modules by assembling and electrical connection
12/15/2011	DE102008053179B4 Verfahren zum Erzeugen eines Transistorgates mit sub-fotolithographischen Abmessungen A method for producing a transistor gate with sub-photolithographic dimensions
12/15/2011	DE102008035812B4 Flacher pn-Übergang, der durch in-situ-Dotierung während des selektiven Aufwachsens einer eingebetteten Halbleiterlegierung mittels eines zyklischen Aufwachs-Ätz-Abscheideprozesses gebildet wird Shallow pn junction formed by in-situ doping during the selective growth of an embedded semiconductor alloy by means of a cyclic nursery grounds etch-deposition process
12/15/2011	DE102007003583B4 Verfahren zum Herstellen eines Transistors A method of manufacturing a transistor
12/15/2011	DE102006026954B4 Verfahren zur Herstellung eines Kondensators in einem Halbleiterbauelement A method for manufacturing a capacitor in a semiconductor device
12/15/2011	DE102006025671B4 Verfahren zur Herstellung von dünnen integrierten Halbleitereinrichtungen A process for the production of thin semiconductor integrated devices
12/15/2011	DE102005063131B4 Halbleiterbauelement und Verfahren zum Reduzieren von Leckströmen, die durch eine Fehljustierung einer Kontaktstruktur hervorgerufen werden, durch Erhöhen einer Fehlertoleranz des Kontaktstrukturierungsprozesses A semiconductor device and method for reducing leakage currents, which are caused by a misalignment of a contact structure, by increasing an error tolerance of the contact patterning process
12/15/2011	DE102005058139B4 Verfahren zur Herstellung einer Metallschichtanordnung für ein Halbleiterbauelement, Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a metal layer arrangement for a semiconductor device, method for manufacturing a semiconductor device and semiconductor device
12/15/2011	DE102005043657B4 Chipmodul, Verfahren zur Verkapselung eines Chips und Verwendung eines Verkapselungsmaterials Chip module, a chip and method of encapsulating the encapsulating material using a
12/15/2011	DE10111710B4 Befestigungsverfahren für elektrische Bauteile Attachment methods for electrical components
12/15/2011	CA2801875A1 Copper-electroplating composition and process for filling a cavity in a semiconductor substrate using this composition
12/14/2011	EP2395620A1 Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
12/14/2011	EP2395551A1 Thin film transistor substrate, method of fabricating the same and flat display having the same
12/14/2011	EP2395546A2 Method for processing solar cell substrates in a vertical furnace
12/14/2011	EP2395544A1 Semiconductor device producing method and semiconductor device
12/14/2011	EP2395543A1 Method for manufacturing a grid of conductive lines with crossed access
12/14/2011	EP2395397A1 Resist remover composition and method for removing resist using same
12/14/2011	EP2395394A2 Method for printing etch masks using phase-change materials
12/14/2011	EP2395134A1 GaN SUBSTRATE AND METHOD OF ITS MANUFACTURE, METHOD OF MANUFACTURING GaN LAYER-BONDED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
12/14/2011	EP2395133A1 Epitaxial silicon carbide single crystal substrate and mehtod for producing same
12/14/2011	EP2394787A1 Silicon carbide monocrystal substrate and manufacturing method therefor
12/14/2011	EP2394775A1 Workpiece cutting method
12/14/2011	EP2394299A1 Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure
12/14/2011	EP2394298A1 Ic and ic manufacturing method
12/14/2011	EP2394297A2 Scribe-line through silicon vias
12/14/2011	EP2394296A1 Trench formation method for releasing a thin-film substrate from a reusable semiconductor template
12/14/2011	EP2394295A2 Selecting one or more parameters for inspection of a wafer
12/14/2011	EP2394294A2 Patterned wafer inspection system using a non-vibrating contact potential difference sensor
12/14/2011	EP2394293A2 Ion implanted substrate having capping layer and method
12/14/2011	EP2394292A2 Semiconductor material manufacture
12/14/2011	EP2393630A1 Junction body, semiconductor module, and manufacturing method for junction body
12/14/2011	EP1954111B1 Process for producing multilayer ceramic substrate
12/14/2011	EP1797581B1 Precursor for film formation and method for forming ruthenium-containing film
12/14/2011	EP1797151B1 Cmp composition for improved oxide removal rate
12/14/2011	EP1665354B1 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
12/14/2011	EP1484788B1 High-frequency power supply structure and plasma cvd device using the same
12/14/2011	EP1393362B1 Method of manufacturing a trench-gate semiconductor device
12/14/2011	EP1326270B1 Method of manufacturing asilicon wafer and a silicon epitaxial wafer
12/14/2011	EP1232520B1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
12/14/2011	EP1164435B1 Photosensitive polysilazane composition and method of forming patterned polysilazane film
12/14/2011	EP1070347B1 Semiconductor wafer processing tapes
12/14/2011	CN202076307U 一种高性能硅片导入装置 Introducing a high-performance silicon devices
12/14/2011	CN202076299U 硅片导载部件及具有该导载部件的硅片转载设备 Reprinted silicon wafers guide contained parts and equipment have contained parts of the guide
12/14/2011	CN202076243U 一种硅片倒片夹具 Silicon wafers rewind fixture
12/14/2011	CN202076242U 适用于双列直插式外壳封盖的夹具 For dual in-line fixture housing cover
12/14/2011	CN202076241U Multipurpose annealing silicon carbide boat
12/14/2011	CN202076240U 用于集成电路植球的装置 Integrated circuit device for bumping
12/14/2011	CN202076239U 光学指纹模组快速封装模具 Fast optical fingerprint module packaging mold
12/14/2011	CN202076238U 一种半导体引线框架连续切断成型结构 A semiconductor lead frame structure forming a continuous cut
12/14/2011	CN202076237U Pressure plate of heat seal semiconductor device
12/14/2011	CN202076236U Lead frame punching forming automatic pipe-loading device with material pipe expanding mechanism
12/14/2011	CN202076235U 一种用于集成电路晶圆烘焙的热板单元 Hot plate unit for an integrated circuit wafer baking
12/14/2011	CN202076234U 一种用于集成电路晶圆烘焙的热板 Hot plate for an integrated circuit wafer baking
12/14/2011	CN202072288U 基片传输装置 Substrate transfer means
12/14/2011	CN202071023U 夹具 Fixture
12/14/2011	CN1988116B 制造场效应晶体管的方法以及由此制造的晶体管结构 The method of producing a field effect transistor, and a transistor structure fabricated therefrom
12/14/2011	CN1944716B 凸点形成用非氰系电解镀金浴 Bump forming system with a non-cyanide electroless gold plating bath
12/14/2011	CN1942606B 液体处理装置和液体处理方法 Liquid processing apparatus and liquid processing method
12/14/2011	CN1941410B 生产高密度半导体功率器件的钴-硅接触绝缘金属工艺 Production of high-density semiconductor power devices cobalt - silicon contact insulated metal craft
12/14/2011	CN1934404B 用于对处理物体进行加工的系统 For the processing system for processing an object
12/14/2011	CN1910600B Id标记、id卡和id标签 Id tag, id cards and id tag
12/14/2011	CN1868068B 完全耗尽型绝缘衬底硅cmos逻辑 Fully depleted silicon insulating substrate cmos logic
12/14/2011	CN1868002B 具有多个控件的基于纳米管的开关元件及由其制成的电路 Based on circuit switching element and nanotubes made therefrom have multiple controls
12/14/2011	CN1849379B 用于化学机械抛光的磨料颗粒 For chemical mechanical polishing abrasive grain
12/14/2011	CN1849260B 金属纳米粒子及其制造方法、金属纳米粒子分散液及其制造方法、以及金属细线和金属薄膜及其制造方法 A method of manufacturing the metal nanoparticles, metal nanoparticles dispersion liquid and manufacturing method thereof, and a metal thin film and its manufacturing method and metal
12/14/2011	CN1770474B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/14/2011	CN1768306B 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物 Lithography containing an epoxy compound and a carboxylic acid compound represented by the underlayer coating forming composition
12/14/2011	CN1763049B 三甲基镓的制造方法以及氮化镓薄膜的制造方法 Method for producing trimethyl gallium and the gallium nitride thin film manufacturing method of
12/14/2011	CN1655356B 集成电路器件及其制造方法 Integrated circuit device and manufacturing method thereof
12/14/2011	CN102282917A 等离子处理装置以及等离子生成装置 The plasma processing apparatus and a plasma generating means
12/14/2011	CN102282916A 等离子体生成装置及方法 Plasma generation device and method
12/14/2011	CN102282717A 燃料仪电路以及电池组 Fuel meter circuit and battery pack
12/14/2011	CN102282686A 用于制造光电子器件的方法和光电子器件 Method of manufacturing optoelectronic devices and optoelectronic devices for
12/14/2011	CN102282684A 发光器件用衬底 The light emitting device using the substrate
12/14/2011	CN102282682A 增加晶片薄层电阻和/或光电池功率密度水平的溶液 Solution to increase the sheet resistance of the wafer and / or optical power density of the battery level
12/14/2011	CN102282674A 固体摄像装置 The solid-state imaging device
12/14/2011	CN102282673A 用于透明电子装置的透明存储器 Transparent memory for a transparent electronic device
12/14/2011	CN102282668A 嵌埋硅/锗材料相对沟道区的偏移降低的晶体管 Embedded silicon / germanium material relative offset of the channel region of the transistor to reduce
12/14/2011	CN102282667A 半导体集成电路的电源布线构造 The power supply wiring structure of the semiconductor integrated circuit
12/14/2011	CN102282666A 多深度浅沟槽隔离工艺 More depth shallow trench isolation process

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