Patents for H01J 27 - Ion beam tubes (3,716)
11/2002
11/14/2002US20020166975 Gaseous ion source feed for oxygen ion implantation
11/12/2002CA2121892C Ion beam gun
11/07/2002WO2002089537A1 Production of nanocrystal beams
11/07/2002US20020163289 Hall-current ion source
11/07/2002US20020162508 Ionizer for gas cluster ion beam formation
11/06/2002EP1255277A1 Ionizer for gas cluster ion beam formation
11/05/2002US6476399 System and method for removing contaminant particles relative to an ion beam
10/2002
10/31/2002WO2002086489A1 High throughput ion source with multiple ion sprayers and ion lenses
10/31/2002US20020159891 Spatter ion pump
10/31/2002US20020158213 Ion implantation apparatus and insulating bushing therefor
10/31/2002DE10210006A1 Charged particle generator, produces electric field between discharging electrode and free end of charged particle generating electrode
10/29/2002US6472881 Liquid metal ion source and method for measuring flow impedance of liquid metal ion source
10/24/2002US20020154279 Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
10/24/2002US20020153493 Ion source vaporizer
10/22/2002CA2222369C Endcap for indirectly heated cathode of ion source
10/17/2002WO2002082518A1 An apparatus and a method for forming a pattern using a crystal structure of material
10/17/2002WO2002082492A1 Helium ion generation method and apparatus
10/17/2002WO2002082489A2 Ion source filament
10/17/2002DE19933762C2 Gepulste magnetische Öffnung von Elektronen-Zyklotron-Resonanz-Jonenquellen zur Erzeugung kurzer, stromstarker Pulse hoch geladener Ionen oder von Elektronen Pulsed magnetic opening of electron cyclotron resonance Jonen sources for generating short, strong current pulses of highly charged ions or electrons
10/15/2002US6464891 Method for repetitive ion beam processing with a carbon containing ion beam
10/08/2002US6462347 Charge exchanger, ion implantation system comprising the charge exchanger, and method of controlling the rate at which the polarity of ions is changed
10/08/2002CA2216818C Cathode mounting for ion source with indirectly heated cathode
10/03/2002WO2002078040A2 Neutral particle beam processing apparatus
10/03/2002WO2002078036A2 Device for generating an ion beam
10/03/2002CA2442189A1 Device for generating an ion beam
10/02/2002EP1245036A1 Ion implantation ion source, system and method
10/01/2002US6459082 Focused ion beam system
09/2002
09/19/2002WO2002073651A1 Thermal regulation of an ion implantation system
09/19/2002US20020130278 Thermal regulation of an ion implantation system
09/19/2002US20020130039 Apparatus and method of generating charged particles
09/18/2002CN2512110Y Supporter for solid ion source
09/17/2002US6451389 From ion beam and hydrocarbon gas; uniform and particle free; automatically cycles between modes to effect automatic removal of carbon-based buildups
09/12/2002WO2002071816A2 Improved double chamber ion implantation system
09/12/2002US20020125829 Double chamber ion implantation system
09/12/2002US20020125226 Toroidal low-field reactive gas source
09/12/2002US20020125225 Toroidal low-field reactive gas source
09/11/2002EP1238406A2 Gas cluster ion beam smoother apparatus
09/06/2002WO2002069364A2 Magnetic field for small closed-drift thruster
09/06/2002WO2002037525A3 A probe assembly for detecting an ion in a plasma generated in an ion source
08/2002
08/29/2002US20020117637 Ion generation chamber
08/28/2002CN1366706A Spatter ion pump
08/20/2002US6435131 Ion flow forming method and apparatus
08/15/2002WO2002043100A3 Radio frequency ion source
08/01/2002WO2002021566A3 Bulk gas delivery system for ion implanters
08/01/2002US20020102858 Low contamination high density plasma etch chambers and methods for making the same
08/01/2002US20020100876 Ion generation method and filament for ion generation apparatus
07/2002
07/25/2002US20020096650 Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof
07/18/2002US20020092473 Ion source
07/17/2002EP1222677A2 Electron impact ion source
07/16/2002US6421421 Extreme ultraviolet based on colliding neutral beams
07/11/2002US20020089332 Probe assembly for detecting an ion in a plasma generated in an ion source
07/11/2002US20020088950 Ion production device for ion beam irradiation apparatus
07/10/2002EP1221713A2 Mass spectrometry
07/04/2002WO2000070646A9 Secondary electron spectroscopy method and system
07/04/2002US20020084426 Focused ion beam system
07/04/2002US20020084180 Particle source
07/03/2002EP1220272A1 Beam source
07/03/2002EP1220271A2 Ion source having replaceable and sputterable solid source material
07/03/2002CN1356860A Ion generator for ion beam radiator
07/02/2002US6414307 Method and apparatus for enhancing yield of secondary ions
06/2002
06/26/2002EP0782763B1 An ion beam apparatus
06/25/2002CA2220605C Ion source block filament with labyrinth conductive path
06/25/2002CA2181076C Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
06/20/2002US20020074508 Ion optics with shallow dished grids
06/13/2002US20020070357 Magnetron negative ion sputter source
06/12/2002EP1212777A1 Ion beam vacuum sputtering apparatus and method
06/12/2002CN1353443A Ion source and its operating method
06/12/2002CN1353442A Apparatus and method for producing indium ion beam
06/06/2002WO2002045126A1 Ion source
06/06/2002WO2002043803A1 Ion implantation system and control method
06/05/2002EP0880792B1 Loadlock assembly for an ion implantation system
05/2002
05/30/2002WO2002043100A2 Radio frequency ion source
05/30/2002WO2001041181A9 Gas cluster ion beam smoother apparatus
05/30/2002CA2429737A1 Radio frequency ion source
05/29/2002DE10057182A1 Monitoring pulsed metal ion source involves evaluating current and voltage signals forming high voltage pulse in sputter pulser to logically detect one of two possible sputter process states
05/28/2002US6394026 Low contamination high density plasma etch chambers and methods for making the same
05/16/2002US20020056342 Apparatus and method for generating indium ion beam
05/15/2002EP1204986A1 System and method for providing implant dose uniformity across the surface of a substrate
05/14/2002US6388226 Toroidal low-field reactive gas source
05/10/2002WO2002037525A2 A probe assembly for detecting an ion in a plasma generated in an ion source
05/10/2002WO2002037521A2 Hall effect ion source at high current density
05/10/2002WO2002019376A3 System and method for removing contaminant particles relative to an ion beam
05/10/2002WO2001006533A3 Pulsed magnetic opening of electron resonance ion sources for the generation of short, high-current pulses of highly charged ions or electrons
05/09/2002US20020053880 Ion source and operation method thereof
05/09/2002US20020053642 System and method for rapidly controlling the output of an ion source for ion implantation
05/08/2002DE10047688A1 Ion source used in plasma deposition, implantation and ion etching of microstructures comprises gas volumes on either side of a separating wall to form a pressure difference between the gas volumes
05/02/2002EP1200988A2 Method and apparatus for milling copper interconnects in a charged particle beam system
04/2002
04/25/2002WO2002033727A1 Focused ion beam system
04/25/2002WO2002033725A2 System and method for rapidly controlling the output of an ion source for ion implantation
04/25/2002US20020046991 Toroidal low-field reactive gas source
04/18/2002US20020043630 Aluminum implantation method
04/11/2002US20020040969 Apparatus and method for preventing the short circuit of a filament of a source head to a cathode
04/04/2002WO2001072093A3 Plasma accelerator arrangement
03/2002
03/28/2002WO2002025685A1 Ion source magnet assembly
03/28/2002WO2001091523A3 Extreme ultraviolet source based on colliding neutral beams
03/28/2002US20020036461 Discharge device having cathode with micro hollow array
03/21/2002US20020033446 Neutral beam processing apparatus and method
03/19/2002US6359388 Cold cathode ion beam deposition apparatus with segregated gas flow
03/14/2002WO2002021566A2 Bulk gas delivery system for ion implanters
03/14/2002WO2002005315A3 System and method for improving thin films by gas cluster ion be am processing
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