Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2005
06/02/2005WO2005050664A1 Data retention indicator for magnetic memories
06/02/2005WO2005050662A1 Method and apparatus for partial refreshing of dram
06/02/2005WO2005050661A1 Antiferromagnetic stabilized storage layers in gmram storage devices
06/02/2005WO2005050660A1 Method and device for performing active field compensation during programming of a magnetoresistive memory device
06/02/2005WO2005050659A1 Non-homogeneous shielding of an mram chip with magnetic field sensor
06/02/2005WO2005050658A1 Method and device for preventing erroneous programming of a magnetoresistive memory element
06/02/2005WO2005050657A1 Method for operating a data storage apparatus employing passive matrix addressing
06/02/2005WO2005050655A1 Latch scheme with invalid command detector
06/02/2005WO2005050654A2 Back-bias voltage generator with temperature control
06/02/2005WO2005050653A2 Stress assisted current driven switching for magnetic memory applications
06/02/2005WO2005050628A1 Method for fabricating giant magnetoresistive (gmr) devices
06/02/2005WO2005041206A3 Method, system and circuit for programming a non-volatile memory array
06/02/2005WO2004090905A3 Three-dimensional memory device incorporating segmented bit line memory array
06/02/2005US20050120161 Methods of operation of a memory device and system
06/02/2005US20050118458 forming multilayers of dielectric spacers and cobalt iron-based ferromagnetic alloys, having improved perfomances, for use in electronics
06/02/2005US20050117444 Multiple use memory chip
06/02/2005US20050117442 Integrated semiconductor memory
06/02/2005US20050117440 Signal line driver circuit which reduces power consumption and enables high-speed data transfer
06/02/2005US20050117439 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
06/02/2005US20050117437 Semiconductor memory device, write control circuit and write control method for the same
06/02/2005US20050117435 Sense amplifier connecting/disconnecting circuit arrangement, and method for operating such a circuit arrangement
06/02/2005US20050117434 Semiconductor memory device
06/02/2005US20050117433 Semiconductor device
06/02/2005US20050117432 Low power control circuit and method for a memory device
06/02/2005US20050117431 Crosspoint-type ferroelectric memory
06/02/2005US20050117426 Apparatus to improve stability of an MRAM over process and operational variations
06/02/2005US20050117425 Method for optimizing MRAM circuit performance
06/02/2005US20050117422 Semiconductor integrated circuit including semiconductor memory
06/02/2005US20050117420 Memory test circuit and test system
06/02/2005US20050117419 Method of evaluating characteristics of semiconductor memory element, and method of extracting model parameter of semiconductor memory element
06/02/2005US20050117418 Data storage systems
06/02/2005US20050117413 Semiconductor device having automatic controlled delay circuit and method therefor
06/02/2005US20050117412 Selecting a magnetic memory cell write current
06/02/2005US20050117411 Semiconductor storage device
06/02/2005US20050117409 Selecting a magnetic memory cell write current
06/02/2005US20050117408 Current controlled word and sense source
06/02/2005US20050117407 Optimized MRAM current sources
06/02/2005US20050117403 Semiconductor integrated circuit device
06/02/2005US20050117402 Address input buffer of differential amplification type in semiconductor memory device
06/02/2005US20050117401 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
06/02/2005US20050117400 System and method for programming cells in non-volatile integrated memory devices
06/02/2005US20050117398 Semiconductor storing device
06/02/2005US20050117394 Switch matrix circuit, logical operation circuit, and switch circuit
06/02/2005US20050117393 Thin film magnetic memory device provided with program element
06/02/2005US20050117392 Magnetic nonvolatile memory cell and magnetic random access memory using the same
06/02/2005US20050117391 Magnetic random access memory
06/02/2005US20050117390 Semiconductor integrated circuit device
06/02/2005US20050117389 Easy axis magnetic amplifier
06/02/2005US20050117386 Magnetoresistive element, magnetic memory cell, and magnetic memory device
06/02/2005US20050117385 Method to equalize word current circuitry
06/02/2005US20050117384 Signal circuit, display apparatus including same, and method for driving data line
06/02/2005US20050117383 Ferroelectric memory devices having a plate line control circuit and methods for operating the same
06/02/2005US20050117382 Methods of fabricating ferroelectric memory devices having expanded plate lines
06/02/2005US20050117381 Current difference divider circuit
06/02/2005US20050117380 FeRAM having single ended sensing architecture
06/02/2005US20050117379 Nonvolatile ferroelectric memory device having power control function
06/02/2005US20050116960 Display controller with display memory circuit
06/02/2005US20050116696 Semiconductor integrated circuit device
06/02/2005US20050116361 Metal oxide semiconductor (MOS) type semiconductor device and manufacturing method thereof
06/02/2005US20050116308 Magnetoresistive memory cell with dynamic reference layer
06/02/2005US20050116261 In-pixel memory for display devices
06/02/2005DE10392539T5 Speicherchiparchitektur mit nichtrechteckigen Speicherbänken und Verfahren zum Anordnen von Speicherbänken Memory chip architecture with non-rectangular memory banks and method for disposing of memory banks
06/02/2005DE10349466A1 Taktsignal-Synchronisations-Vorrichtung, sowie Taktsignal-Synchronisationsverfahren Clock synchronization device, and clock signal synchronization method
06/02/2005DE10349464A1 Voltage level converter of input signal from first to second level (output), with level converter containing amplifier, while additionally delayed signal
06/02/2005DE10345491A1 Takt-Receiver-Schaltungsanordnung, insbesondere für Halbleiter-Bauelemente Clock receiver circuit arrangement, in particular for semi-conductor components
06/02/2005DE102004052213A1 Semiconductor memory device e.g. synchronous dynamic RAM, has clock buffer controlling two read pulse signals in synchronization with clocks of external clock signal when column address strobe latency is of preset value
06/02/2005DE102004033743A1 Eine Dünnfilmvorrichtung und ein Verfahren zum Bereitstellen einer thermischen Unterstützung in derselben A thin film device and a method for providing a thermal support in the same
06/02/2005DE102004031448A1 Synchronous semiconductor memory device, has two clock buffers receiving external clock signal and clock bar signal through its non-inverting terminal and inverting terminal, and vice versa to output clock input signals
06/02/2005DE102004031139A1 Verfahren zum Herstellen magnetischer Speicherstrukturen, die Speicherzellschichten mit unterschiedlicher Größe aufweisen Have method for producing magnetic memory structures, the memory cell layers with different size
06/02/2005DE102004030589A1 Magnetic memory cell e.g. magnetic random access memory has spacer layer provided between data layer and superparamagnetic layer having magnetic energy less than magnetic energy of data layer
06/02/2005DE102004030587A1 Thermisch gestützte magnetische Speicherstrukturen Thermally assisted magnetic memory structures
06/02/2005DE102004030544A1 Weichreferenz-Magnetspeicher-Digitalisiervorrichtung und Betriebsverfahren Soft reference magnetic memory digitizing device and method of operation
06/02/2005DE102004030543A1 Magnetspeicher mit einem Kalibrierungssystem Magnetic memory with a calibration system
06/02/2005DE10041375B4 Nichtflüchtige Speicheranordnung A nonvolatile memory device
06/02/2005CA2546263A1 Method for operating a data storage apparatus employing passive matrix addressing
06/01/2005EP1536474A2 Memory device and storage apparatus
06/01/2005EP1535285A1 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
06/01/2005EP1535284A1 Reference voltage generation for memory circuits
06/01/2005EP1535162A1 Memory device supporting a dynamically configurable core organisation
06/01/2005EP1245030B1 Memory device
06/01/2005CN1623206A Noise reduction technique for transistors and small devices utilizing an episodic agitation
06/01/2005CN1623204A Memory storage device with heating element
06/01/2005CN1623115A 液晶显示器及其驱动方法以及帧存储器 Liquid crystal display and driving method and a frame memory
06/01/2005CN1622462A 半导体器件 Semiconductor devices
06/01/2005CN1622421A Delay device and power supply device
06/01/2005CN1622360A Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
06/01/2005CN1622333A Memory cell and forming method thereof
06/01/2005CN1622221A Apparatus and method of analyzing magnetic random access memory
06/01/2005CN1622219A Self refresh oscillator
06/01/2005CN1622205A Molecular optoelectronic memory device
06/01/2005CN1622150A Signal circuit, display apparatus including same, and method for driving data line
06/01/2005CN1622008A Disk array optimizing the drive operation time
06/01/2005CN1204627C Semiconductor component and semiconductor storage
06/01/2005CN1204626C Semiconductor storage for synchronization with clock signal edge
06/01/2005CN1204562C Semiconductor storage device for shortening test time
06/01/2005CN1204561C Memory having plurality of threshold level in memory cell
06/01/2005CN1204506C Storing device
05/2005
05/31/2005US6901532 System and method for recovering from radiation induced memory errors
05/31/2005US6901491 Method and apparatus for integration of communication links with a remote direct memory access protocol
05/31/2005US6901026 Semiconductor integrated circuit equipment with asynchronous operation
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