Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2005
06/16/2005DE102004051158A1 Integrierter Halbleiterspeicher Integrated semiconductor memory
06/16/2005DE102004032466A1 Mehrfachabtastleseschaltung mit Testbetriebsmodus Mehrfachabtastleseschaltung with test mode
06/16/2005DE102004012487A1 Strom sparende Steuerschaltung einer elektronischen Vorrichtung und Betriebsverfahren davon Power saving control circuit of an electronic device and driving method thereof
06/15/2005EP1542284A1 Magnetic non-volatile memory element
06/15/2005EP1542276A2 Memory cell with a layer having colossal magnetoresistance and an asymmetric area
06/15/2005EP1542237A1 Semiconductor memory
06/15/2005EP1542236A2 Apparatus and method of analyzing magnetic random access memory
06/15/2005EP1542235A1 Composite storage circuit and semiconductor device having the same composite storage circuit
06/15/2005EP1540658A1 Refreshing of multi-port memory in integrated circuits
06/15/2005EP1540657A2 Software refreshed memory device and method
06/15/2005EP1540656A2 Replacement memory device
06/15/2005EP1540655A1 Bias sensing in dram sense amplifiers
06/15/2005CN1628358A Charge injection
06/15/2005CN1628357A Method for reading structural phase-Change memory
06/15/2005CN1628356A Reducing the effect of write disturbs in polymer memories
06/15/2005CN1628355A Reading circuit for reading a memory cell
06/15/2005CN1628263A 薄膜晶体管阵列面板 The thin film transistor array panel
06/15/2005CN1628032A Ink jet printhead chip with predetermined micro-electromechanical systems height
06/15/2005CN1627547A Phase change tip storage cell
06/15/2005CN1627546A Field emission phase change diode memory
06/15/2005CN1627521A 半导体集成电路器件 The semiconductor integrated circuit device
06/15/2005CN1627475A Fabricating of integrated memory modular
06/15/2005CN1627445A Delay circuit, ferroelectric memory device and electronic equipment
06/15/2005CN1627444A 半导体存储器件 A semiconductor memory device
06/15/2005CN1627443A Methods of activating word line segments enabled by row addresses and semiconductor memory devices
06/15/2005CN1627441A Latch circuit and synchronous memory including the same
06/15/2005CN1627440A Refresh oscillator
06/15/2005CN1627439A Semiconductor storage device
06/15/2005CN1627438A 半导体集成电路装置 The semiconductor integrated circuit device
06/15/2005CN1627437A Memory device
06/15/2005CN1627435A Gated diode memory cells and write method
06/15/2005CN1627434A Regulating a magnetic memory cell write current
06/15/2005CN1206656C Magnetic random access memory
06/14/2005US6907555 Self-test circuit and memory device incorporating it
06/14/2005US6907493 Memory device interface
06/14/2005US6906979 Semiconductor memory device having bit line kicker
06/14/2005US6906977 Refresh controlling method and apparatus
06/14/2005US6906976 Auto refresh control circuit of semiconductor memory device
06/14/2005US6906975 Reference voltage generating circuit of nonvolatile ferroelectric memory device
06/14/2005US6906972 Integrated DRAM semiconductor memory and method for operating the same
06/14/2005US6906971 Semiconductor integrated circuit device
06/14/2005US6906963 Semiconductor memory device having output driver for high frequency operation
06/14/2005US6906962 Method for defining the initial state of static random access memory
06/14/2005US6906961 Erase block data splitting
06/14/2005US6906958 Word-line voltage generator
06/14/2005US6906954 Semiconductor integrated circuit and nonvolatile memory element
06/14/2005US6906952 Nonvolatile semiconductor memory device and data writing method therefor
06/14/2005US6906951 Bit line reference circuits for binary and multiple-bit-per-cell memories
06/14/2005US6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof
06/14/2005US6906949 Magnetic element and magnetic element array
06/14/2005US6906948 Magnetic random access memory
06/14/2005US6906947 In-plane toroidal memory cell with vertically stepped conductors
06/14/2005US6906946 Compact and highly efficient DRAM cell
06/14/2005US6906945 Bitline precharge timing scheme to improve signal margin
06/14/2005US6906944 Ferroelectric memory
06/14/2005US6906943 Ferroelectric memory device comprising extended memory unit
06/14/2005US6906941 Magnetic memory structure
06/14/2005US6906940 Plane decoding method and device for three dimensional memories
06/14/2005US6906939 Re-writable memory with multiple memory layers
06/14/2005US6906575 Semiconductor integrated circuit device
06/14/2005US6906572 Semiconductor integrated circuit device
06/14/2005US6906504 Voltage booster circuit and semiconductor device for incorporating same
06/14/2005US6906376 EEPROM cell structure and array architecture
06/14/2005US6906369 Magnetic memory elements using 360° walls
06/14/2005US6906368 Magnetic recording medium and magnetic memory apparatus
06/14/2005US6906354 T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
06/14/2005US6905937 Methods of fabricating a cross-point resistor memory array
06/14/2005US6905930 Memory device and fabrication method thereof
06/14/2005US6905888 Magnetic memory element having controlled nucleation site in data layer
06/09/2005WO2005052990A2 Semiconductor device with magneticaly permeable heat sink
06/09/2005WO2005052944A1 Semiconductor memory having self-timing circuit
06/09/2005WO2005027134A3 Multiple bit chalcogenide storage device
06/09/2005WO2005022653A3 Magnetoresistive random access memory with reduced switching field variation
06/09/2005WO2005019848A3 Self-heating burn-in
06/09/2005WO2005015635A3 Spin on polymers for organic memory devices
06/09/2005WO2005001899A3 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
06/09/2005WO2004093083A3 Methods and apparatus for selectively updating memory cell arrays
06/09/2005WO2004059697B1 Adaptive negative differential resistance device
06/09/2005US20050125615 Methods and apparatus for writing an LRU bit
06/09/2005US20050125597 Compensated refresh oscillator
06/09/2005US20050125596 Access control unit and method for use with synchronous dynamic random access memory device
06/09/2005US20050125594 Memory with synchronous bank architecture
06/09/2005US20050125591 Semiconductor memory device having hierarchical bit line structure
06/09/2005US20050124112 Asymmetric-area memory cell
06/09/2005US20050122830 Semiconductor memory device and data read method of the same
06/09/2005US20050122829 Low voltage detector and method for detecting low voltage of FeRAM, and system using the same
06/09/2005US20050122826 Selectable memory word line deactivation
06/09/2005US20050122824 Packet addressing programmable dual port memory devices and related methods
06/09/2005US20050122821 Circuit and method for reducing SRAM standby power
06/09/2005US20050122820 Semiconductor devices including an external power voltage control function and methods of operating the same
06/09/2005US20050122819 Power supply device in semiconductor memory
06/09/2005US20050122818 Ferro electric memory device and electronic device
06/09/2005US20050122816 Storage device using resistance varying storage element and reference resistance value decision method for the device
06/09/2005US20050122814 Memory device and method having data path with multiple prefetch I/O configurations
06/09/2005US20050122813 FeRAM and sense amplifier array having data bus pull-down sensing function and sensing method using the same
06/09/2005US20050122811 Precharge circuit and method employing inactive weak precharging and equalizing scheme and memory device including the same
06/09/2005US20050122810 Methods and systems for dynamically selecting word line off times and/or bit line equalization start times in memory devices
06/09/2005US20050122809 Increasing a refresh period in a semiconductor memory device
06/09/2005US20050122804 Shift redundancy circuit, method for controlling shift redundancy circuit, and semiconductor memory device
06/09/2005US20050122803 Non-volatile multi-level, semiconductor flash memory device and method of driving same
1 ... 381 382 383 384 385 386 387 388 389 390 391 392 393 394 395 396 397 398 399 400 401 ... 761