Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2005
08/04/2005US20050172177 Semiconductor memory device for correcting errors using ECC (error correcting code) circuit
08/04/2005US20050170588 Method for forming multi-level mask ROM cell and NAND multi-level mask ROM
08/04/2005US20050170586 Method of manufacturing non-volatile DRAM
08/04/2005US20050170584 Compact and highly efficient DRAM cell
08/04/2005US20050170218 Tunnel junction type includes a magnetic multi-layered film, ferromagnetic film, insulating film such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film; entirety of first magnetic multi-layered film can be rewritten
08/04/2005US20050169552 Method of automatic image processing
08/04/2005US20050169133 Optical recording medium, recording/reproducing apparatus, and recording/reproducing method
08/04/2005US20050169097 Method and apparatus for coordinating memory operations among diversely-located memory components
08/04/2005US20050169091 Semiconductor memory device suitable for mounting on portable terminal
08/04/2005US20050169088 Voltage booster device for semi-conductor components
08/04/2005US20050169087 Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell
08/04/2005US20050169084 Semiconductor memory device and method of refreshing the semiconductor memory device
08/04/2005US20050169083 Semiconductor storage device and refresh control method therefor
08/04/2005US20050169082 Memory sensing circuit and method for low voltage operation
08/04/2005US20050169080 Triggering of IO equilibrating ending signal with firing of column access signal
08/04/2005US20050169079 Semiconductor memory device using tapered arrangement of local input and output sense amplifiers
08/04/2005US20050169067 Memory device capable of performing high speed reading while realizing redundancy replacement
08/04/2005US20050169061 Multi-port memory device for buffering between hosts and non-volatile memory devices
08/04/2005US20050169059 Current threshold detector
08/04/2005US20050169058 Data management apparatus and method used for flash memory
08/04/2005US20050169057 Semiconductor memory device which stores plural data in a cell
08/04/2005US20050169053 Window-based flash memory storage system and management and access methods thereof
08/04/2005US20050169052 Novel EEPROM cell structure and array architecture
08/04/2005US20050169051 Writable tracking cells
08/04/2005US20050169049 Non-volatile memory array with simultaneous write and erase feature
08/04/2005US20050169048 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
08/04/2005US20050169047 Magnetic field sensor using spin polarized current
08/04/2005US20050169046 Closed flux magnetic memory
08/04/2005US20050169044 Magnetic memory device having magnetic shield layer, and manufacturing method thereof
08/04/2005US20050169042 Multi-threshold MIS integrated circuit device and circuit design method thereof
08/04/2005US20050169040 Combination field programmable gate array allowing dynamic reprogrammability
08/04/2005US20050169039 Combination field programmable gate array allowing dynamic reprogrammability and non-volatile programmability based upon transistor gate oxide breakdown
08/04/2005US20050169038 Semiconductor memory device
08/04/2005US20050169037 Ferroelectric-type nonvolatile semiconductor memory
08/04/2005US20050169036 Nonvolatile memory device using serial diode cell
08/04/2005US20050169034 Remote sensed pre-amplifier for cross-point arrays
08/04/2005US20050169032 Memory macro with modular peripheral circuit elements
08/04/2005US20050168887 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
08/04/2005US20050168544 Replaceable memory device for a consumable substance container, and methods
08/04/2005US20050168533 Printer nozzle for ejecting ink
08/04/2005US20050168265 Power supply circuit for oscillator of semiconductor memory device and voltage pumping device using the same
08/04/2005US20050168263 Semiconductor device and driving method of semiconductor device
08/04/2005US20050167700 Conductive structure for microelectronic devices and methods of fabricating such structures
08/04/2005US20050167699 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory
08/04/2005US20050167689 Non-volatile zero field splitting resonance memory
08/04/2005US20050167657 Multi-bit magnetic memory cells
08/04/2005DE10361713A1 Use of oligo-thiophene or oligo-pyrrole compounds or metal-phthalocyanine complexes as electron donors in charge transfer complexes for use in non-volatile memory elements, e.g. multi-bit memory elements
08/04/2005DE10361496A1 Anordnung mit einer Speichereinrichtung und einer programmgesteuerten Einheit Arrangement with a memory device and a programmable unit
08/04/2005DE10297767T5 Verfahren zum Lesen eines Speichers mit einer strukturellen Phasenänderung A method of reading a memory having a structural phase-change
08/04/2005DE102005001855A1 Semiconductor memory device amplifies data of global data line pairs and outputs to other global data line pairs during writing operation
08/04/2005DE102005001308A1 Semiconductor memory device e.g. uni-transistor RAM, has row selection circuit to non-sequentially select word lines during successive refresh operations in full and reduced memory capacity modes based on refresh signal pulse
08/04/2005DE102004063767A1 Set programming method for phase change RAM, involves applying set current pulses such that magnitude of set current pulse is gradually decreased from stage to stage, for transitioning phase change cells to set resistance state
08/04/2005DE102004063583A1 Non-volatile memory device e.g. ROM, has gate oxide layer positioned on semiconductor substrate and block oxide layers disposed in bottom of lateral faces of polysilicon gate, and word lines vertically placed on substrate
08/04/2005DE102004062224A1 Halbleitervorrichtung und Halbleitervorrichtungsmodul Semiconductor device and semiconductor device module
08/04/2005DE102004059409A1 Magnetische Speichervorrichtung Magnetic storage device
08/04/2005DE102004038417A1 Programmierschaltung und -verfahren und nichtflüchtiger Halbleiterspeicherbaustein Programming circuit and method, and non-volatile semiconductor memory device
08/04/2005DE102004030174A1 Verfahren zur Herstellung magnetischer Direktzugriffsspeicher A process for the production of magnetic random access memory
08/04/2005DE102004001577A1 Halbleiter-Speicherschaltung und Verfahren zum Betreiben derselben in einem Bereitschaftsmodus A semiconductor memory circuit and method of operating same in a standby mode
08/04/2005DE102004001434A1 Speicherbauelement Memory device
08/03/2005EP1560332A2 Flip-flops, shift registers, and active-matrix display devices
08/03/2005EP1560225A2 Method and apparatus for reducing soft errors
08/03/2005EP1560223A2 A current threshold detector
08/03/2005EP1560222A1 Method for producing a combined RAM and ROM device
08/03/2005EP1560221A2 Semiconductor memory device
08/03/2005EP1560220A1 Low consumption integrated memory circuit
08/03/2005EP1560216A1 Optical recording medium recording/reproducing apparatus and recording/reproducing method
08/03/2005EP1560123A2 Information processing apparatus and method of accessing memory
08/03/2005EP1559558A2 Replaceable memory device for a consumable substance container
08/03/2005EP1559110A1 Control of memory arrays utilizing zener diode-like devices
08/03/2005EP1559109A1 Stacked organic memory devices and methods of operating and fabricating
08/03/2005EP1559107A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology
08/03/2005EP1559106A2 Magnetic memory device
08/03/2005EP1223586B1 Nonvolatile memory for storing multibit data
08/03/2005CN1650444A Programmable structure, an array including the structure, and methods of forming the same
08/03/2005CN1650371A Flexible redundancy for memories
08/03/2005CN1650370A Redundancy in chained memory architectures
08/03/2005CN1650369A Layout for thermally selected cross-point MRAM cell
08/03/2005CN1650368A Semiconductor memory device and operating method for a semiconductor memory device
08/03/2005CN1650270A Destructive-read random access memory system buffered with destructive-read memory cache
08/03/2005CN1649128A Integrated circuit and method for programming charge storage memory cells
08/03/2005CN1649031A Memory
08/03/2005CN1649030A Semiconductor memory device
08/03/2005CN1649029A Current threshold detector
08/03/2005CN1649027A Magnetic memory device and method of manufacturing the same
08/03/2005CN1649026A Semiconductor memory device
08/03/2005CN1648972A Flip-flops, shift registers, and active-matrix display devices
08/03/2005CN1648877A Information processing apparatus and method of accessing memory
08/03/2005CN1648756A Active matrix substrate and display device
08/03/2005CN1213472C 0peration of programmed and erasing P-channel SONOS memory unit
08/03/2005CN1213470C Semiconductor device and checkup apparatus thereof
08/03/2005CN1213453C Crossover point memory array containing blocking sneak path current shared equipment
08/03/2005CN1213437C Vertically stacked field programmable nonvolatile memory and method of fabrication
08/03/2005CN1213436C Semiconductor storage working at low power consumption
08/03/2005CN1213435C High data read-out allowance memory for storing data using change of resistance quantity
08/03/2005CN1213434C Differential reading-out amplifying circuit and dynamic logic circuit for using it
08/03/2005CN1213369C Reset device semiconductor IC device, semiconductor memory
08/02/2005US6925543 Burst transfer memory
08/02/2005US6925030 Nonvolatile ferroelectric memory device with split word lines
08/02/2005US6925029 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
08/02/2005US6925028 DRAM with multiple virtual bank architecture for random row access
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