Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
09/2005
09/27/2005US6949782 Semiconductor memories
09/27/2005US6949779 Magnetoresistive element and magnetic memory
09/27/2005US6949441 Ferroelectric memory device and method of making the same
09/27/2005US6949435 Asymmetric-area memory cell
09/27/2005US6948799 Micro-electromechanical fluid ejecting device that incorporates a covering formation for a micro-electromechanical actuator
09/27/2005US6948794 Printhead re-capping assembly for a print and demand digital camera system
09/27/2005US6948661 Data structure encoded on a surface of an object
09/24/2005CA2500938A1 Memory devices based on electric field programmable films
09/24/2005CA2500937A1 Memory cell having an electric field programmable storage element, and method of operating same
09/22/2005WO2005088745A1 Magnetoresistive element and its manufacturing method
09/22/2005WO2005088642A1 Semiconductor memory
09/22/2005WO2005088641A1 Semiconductor memory and operating method of semiconductor memory
09/22/2005US20050210215 Semiconductor device permitting rapid data reading and writing between processor and memory
09/22/2005US20050210186 Semiconductor device
09/22/2005US20050210184 Operating non-volatile memory without read disturb limitations
09/22/2005US20050210175 Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the same
09/22/2005US20050208699 Phase Change Memory Cell On Silicon-On Insulator Substrate
09/22/2005US20050208681 Method for fabricating a flux concentrating system for use in a magnetoelectronics device
09/22/2005US20050208680 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
09/22/2005US20050207266 Semiconductor integrated circuit device
09/22/2005US20050207265 Memory cell with an asymmetric crystalline structure
09/22/2005US20050207263 Magnetic non-volatile memory element
09/22/2005US20050207257 Memory device and method having banks of different sizes
09/22/2005US20050207256 Semiconductor devices, capacitor antifuses, dynamic random access memories, and cell plate bias connection methods
09/22/2005US20050207254 Detection circuit for mixed asynchronous and synchronous memory operation
09/22/2005US20050207252 Semiconductor storage device, test method therefor, and test circuit therefor
09/22/2005US20050207251 Integrated semiconductor memory with sense amplifier
09/22/2005US20050207250 Sense amplifier of ferroelectric memory device
09/22/2005US20050207248 Shared bit line cross-point memory array manufacturing method
09/22/2005US20050207246 Semiconductor memory device
09/22/2005US20050207243 Semiconductor memory device with redundancy circuit
09/22/2005US20050207240 Digital processing device with disparate magnetoelectronic gates
09/22/2005US20050207239 Semiconductor memory device and timing control method
09/22/2005US20050207232 Access method for a NAND flash memory chip, and corresponding NAND flash memory chip
09/22/2005US20050207231 Memory card using NAND flash memory and its operating method
09/22/2005US20050207229 Nonvolatile semiconductor memory
09/22/2005US20050207227 Actively driven VREF for input buffer noise immunity
09/22/2005US20050207222 Detecting over programmed memory
09/22/2005US20050207220 Nonvolatile semiconductor memory
09/22/2005US20050207219 Magnetic tunnel junction structures and methods of fabrication
09/22/2005US20050207218 Tunneling diode magnetic junction memory
09/22/2005US20050207217 Layered magnetic structures having improved surface planarity for bit material deposition
09/22/2005US20050207216 Semiconductor integrated circuit device
09/22/2005US20050207215 Methods of forming memory circuitry
09/22/2005US20050207214 Semiconductor memory device
09/22/2005US20050207212 Semiconductor memory device
09/22/2005US20050207211 Programmable MOS device formed by hot carrier effect
09/22/2005US20050207210 Apparatus and Method for Small Signal Sensing in an SRAM Cell Utilizing PFET Access Devices
09/22/2005US20050207208 Situ patterning of electrolyte for molecular information storage devices
09/22/2005US20050207207 Random number generator and method for generating random numbers
09/22/2005US20050207206 Reducing the effect of write disturbs in polymer memories
09/22/2005US20050207205 Ferroelectric-type nonvolatile semiconductor memory
09/22/2005US20050207204 Optoelectronic device
09/22/2005US20050207203 FeRAM having common main bit line
09/22/2005US20050207202 Ferro-electric memory device and method of manufacturing the same
09/22/2005US20050207201 Method and apparatus to reduce storage node disturbance in ferroelectric memory
09/22/2005US20050207064 Magnetic switching device
09/22/2005US20050206677 High nozzle density inkjet printhead
09/22/2005US20050206593 Light emitting display, display panel, and driving method thereof
09/22/2005US20050206466 Refresh oscillator
09/22/2005US20050206440 High voltage generator in semiconductor memory device
09/22/2005US20050206427 Semiconductor integrated circuit device
09/22/2005US20050206421 Nonvolatile flip-flop circuit and method of driving the same
09/22/2005US20050206420 Apparatus for latency specific duty cycle correction
09/22/2005US20050206411 Device for generating a bit line selection signal of a memory device
09/22/2005US20050206410 Clock stop detector
09/22/2005US20050205983 Semiconductor memory device and multi-chip module comprising the semiconductor memory device
09/22/2005US20050205964 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/22/2005US20050205943 Memory and method of fabricating the same
09/22/2005US20050205939 Transistor of volatile memory device with gate dielectric structure capable of trapping charges and method for fabricating the same
09/22/2005US20050205909 Magnetic random access memory and data write method for the same
09/22/2005US20050205908 Semiconductor memory device provided with magneto-resistive element and method for fabricating the same
09/22/2005DE19706534B4 Halbleitereinrichtung, bei der eine interne Funktion entsprechend einem Potential einer speziellen Anschlußfläche bestimmt wird, und Verfahren des Bestimmens einer internen Funktion einer Halbleitereinrichtung A semiconductor device in which an internal function in accordance with a potential of a specific terminal area is determined, and procedures of determining an internal function of a semiconductor device
09/22/2005DE10323863B4 Integrierte Schaltung und Verfahren zum Betreiben einer integrierten Schaltung Integrated circuit and method for operating an integrated circuit
09/22/2005DE102005009700A1 Memory cell e.g. FET, programming method for computer system, involves applying additional programming pulse to selected cells that are programmed for highest state, without verifying state of cells, for enlarging read margin
09/22/2005DE102004032478A1 Verzögerungsregelkreis in Halbleiterspeichervorrichtung und sein Taktsynchronisierverfahren Delay control circuit in semiconductor memory device and its Taktsynchronisierverfahren
09/22/2005DE102004009958B3 Schaltungsanordnung zur Latenzregelung Circuit arrangement for latency control
09/22/2005DE102004009267B3 Selection arrangement for magneto-resistive component, has regulated voltage source to generate offset voltage in output branch for adjusting signal hub of magneto-resistive component
09/22/2005DE10008243B4 Integrierter Speicher mit Plattenleitungssegmenten Built-in memory with the plate line segments
09/21/2005EP1577898A2 Method for reading multiple bit ROM cell
09/21/2005EP1576615A2 Hardware security device for magnetic memory cells
09/21/2005EP1576614A2 Tamper-resistant packaging and approach
09/21/2005EP1576613A2 Method and device for protection of an mram device against tampering
09/21/2005EP1576612A1 A method for fabricating a flux concentrating system for use in a magnetoelectronics device
09/21/2005EP1576611A2 Tamper-resistant packaging and approach
09/21/2005EP1576610A2 Sense amplifier for a memory having at least two distinct resistance states
09/21/2005EP1576588A2 Phase change media for high density data storage
09/21/2005EP0916159B1 Static memory cell
09/21/2005CN1672217A Method and apparatus for erasing flash memory
09/21/2005CN1672216A Method of establishing reference levels for sensing multilevel memory cell states
09/21/2005CN1672215A Sense amplifier for multilevel non-volatile integrated memory devices
09/21/2005CN1672214A 互补位pcram感测放大器和操作方法 Complementary bit pcram sense amplifier and method of operation
09/21/2005CN1672213A 磁随机存取存储器 Magnetic random access memory
09/21/2005CN1672125A Methods of factoring and modular arithmetic
09/21/2005CN1670980A A chalcogenide memory cell having a horizontal electrode and method for forming same
09/21/2005CN1670979A Phase change memory cell on silicon-on insulator substrate
09/21/2005CN1670863A Organic-polymer memory element
09/21/2005CN1670862A Device for generating a bit line selection signal of a memory device
09/21/2005CN1670861A Semiconductor memory device and timing control method
09/21/2005CN1670860A Programmable mos storage circuit and its programmable method
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