Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2005
08/30/2005US6937087 Temperature sensor and method for detecting trip temperature of a temperature sensor
08/30/2005US6937001 Circuit for generating a reference voltage having low temperature dependency
08/30/2005US6936903 Magnetic memory cell having a soft reference layer
08/30/2005US6936886 High density SRAM cell with latched vertical transistors
08/30/2005US6936878 Semiconductor memory device with reduced memory cell area
08/30/2005US6936479 Method of making toroidal MRAM cells
08/30/2005US6935724 Ink jet nozzle having actuator with anchor positioned between nozzle chamber and actuator connection point
08/25/2005WO2005078735A1 Semiconductor memory
08/25/2005WO2005078734A1 Dll circuit
08/25/2005WO2005078733A2 Self-boosting system for flash memory cells
08/25/2005WO2005078732A1 Electronic memory with tri-level cell pair
08/25/2005WO2005078731A1 Semiconductor memory
08/25/2005WO2005078730A1 Non-switching pre-and post-disturb compensational pulses
08/25/2005WO2005077025A2 Secured phase-change devices
08/25/2005WO2005076916A2 Non-volatile memory array with simultaneous write and erase feature
08/25/2005WO2005076745A2 Method of managing a multi-bit-cell flash memory
08/25/2005WO2005043541A3 Method and system for providing a programmable current source for a magnetic memory
08/25/2005US20050188150 Method and apparatus for providing a memory with write enable information
08/25/2005US20050186686 Method of fabricating data tracks for use in a magnetic shift register memory device
08/25/2005US20050186326 High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments
08/25/2005US20050185572 Fast reading, low consumption memory device and reading method thereof
08/25/2005US20050185567 Storage device having a storage cell programmable to one of more than two storage states
08/25/2005US20050185497 Semiconductor memory device
08/25/2005US20050185493 Data transfer method and system
08/25/2005US20050185491 Semiconductor memory device having optimum refresh cycle according to temperature variation
08/25/2005US20050185489 Dynamic data restore in thyristor-based memory device
08/25/2005US20050185484 Semiconductor memory device having test mode for data access time
08/25/2005US20050185481 Redundancy relieving circuit
08/25/2005US20050185478 Method to produce data cell region and system region for semiconductor memory
08/25/2005US20050185477 Liquid crystal display device
08/25/2005US20050185474 Semiconductor integrated circuit
08/25/2005US20050185473 Memory cell testing feature
08/25/2005US20050185471 Method of erasing NAND flash memory device
08/25/2005US20050185470 Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device
08/25/2005US20050185469 Reverse voltage generation circuit
08/25/2005US20050185465 Memory device
08/25/2005US20050185464 Array structure of two-transistor cells with merged floating gates for byte erase and re-write if disturbed algorithm
08/25/2005US20050185463 Nonvolatile memory and data processing system
08/25/2005US20050185462 Non-volatile memory and semiconductor device
08/25/2005US20050185458 Low magnetization materials for high performance magnetic memory devices
08/25/2005US20050185457 Magnetic memory device and method of manufacturing the same
08/25/2005US20050185456 Thin film device and a method of providing thermal assistance therein
08/25/2005US20050185455 Perpendicular magnetization magnetic element utilizing spin transfer
08/25/2005US20050185454 Magnetic tunnel junctions for MRAM devices
08/25/2005US20050185453 Stacked magnetic memory structure
08/25/2005US20050185452 Pulsed write techniques for magneto-resistive memories
08/25/2005US20050185450 Semiconductor integrated circuit
08/25/2005US20050185449 Nonvolatile data storage apparatus
08/25/2005US20050185448 Low leakage current static random access memory
08/25/2005US20050185445 Semiconductor device
08/25/2005US20050185444 Phase-changeable memory device and method of manufacturing the same
08/25/2005US20050185443 Ferroelectric memory input/output apparatus
08/25/2005US20050185439 Memory module and a method of arranging a signal line of the same
08/25/2005US20050185435 Magnetic storage device and method of fabricating the same
08/25/2005US20050185347 Magnetoresistive element and magnetic memory device
08/25/2005US20050185198 Printhead controller integrated circuit
08/25/2005US20050184839 Spin transfer magnetic element having low saturation magnetization free layers
08/25/2005US20050184795 Boosting circuit and semiconductor device using the same
08/25/2005US20050184784 Flip-flops, shift registers, and active-matrix display devices
08/25/2005US20050184770 Internal circuit protection device
08/25/2005US20050184329 Multi-layer memory arrays
08/25/2005US20050184325 Integrated dynamic random access memory element, array and process for fabricating such elements
08/25/2005US20050184078 Drinking container with article holding clip
08/25/2005DE4435649B4 Dateneingabepuffer für eine Halbleiterspeichervorrichtung Data input buffer for a semiconductor memory device
08/25/2005DE10393447T5 Mehrabtastsignal-Gerät, Testgerät und Einstellverfahren Mehrabtastsignal equipment, test equipment and setting
08/25/2005DE10393096T5 Magnetspeicher unter Verwendung eines ferromagnetischen Tunnelübergangselements A magnetic memory using a ferromagnetic tunnel junction element
08/25/2005DE102005004126A1 Magnetic RAM memory cell, has reference layer with magnetization oriented parallel to remnant magnetization that occurs when external magnetic field perpendicular to direction of intrinsic anisotropy of storage layer is applied
08/25/2005DE102005003903A1 System und Verfahren zumn Auffrischen einer dynamischen Speichervorrichtung System and method zumn refreshing a dynamic memory device
08/25/2005DE102005003863A1 Speichervorrichtung mit Nicht-Variabler Schreiblatenz Memory device with non-variable write latency
08/25/2005DE102005001851A1 Multichip package has pad of one semiconductor chip electrically connected to spacer pad which is connected to substrate bonding pad
08/25/2005DE102004020575B3 Semiconductor memory in crosspoint architecture, includes chalcogenide glass forming memory cell with pn junction to bit line and electrode forming memory cell with word line
08/25/2005DE102004004785A1 Spannungs-Pumpen-Anordnung für Halbleiter-Bauelemente Voltage pump assembly for semiconductor devices
08/25/2005DE102004004091A1 Vorrichtung zur Verwendung bei der Synchronisation von Taktsignalen, sowie Taktsignal-Synchronisationsverfahren Apparatus for use in the synchronization of clock signals, and clock signal synchronization method
08/25/2005CA2555581A1 Non-switching pre-and post-disturb compensational pulses
08/25/2005CA2553130A1 Secured phase-change devices
08/24/2005EP1565914A2 Full rail drive enhancement to differential seu hardening circuit while loading data
08/24/2005EP1181691B1 Read-write amplifier for a dram memory cell and dram memory
08/24/2005EP0842537B1 Programmable, non-volatile memory device, and method of manufacturing such a device
08/24/2005CN2720573Y Device for detecting and correcting error in refresh time-pulse of dynamic random access internal storage
08/24/2005CN2720572Y Random access storage unit of four transistors
08/24/2005CN1659708A Variable capacitances for memory cells within a cell group
08/24/2005CN1659707A Magnetoresistive random-access memory device and control method for ferromagnetic trsfer temp of ferromagnetiv semiconductor for comprising the device
08/24/2005CN1659661A Ferroelectric memory integrated circuit with improved reliability
08/24/2005CN1659615A MRAM in-pixel memory for display devices
08/24/2005CN1658484A Reverse voltage generation circuit
08/24/2005CN1658329A Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device
08/24/2005CN1658328A Semiconductor device
08/24/2005CN1658326A Controlled temperature, thermal-assisted magnetic memory device
08/24/2005CN1658325A Memory device with different termination units for different signal frequencies
08/24/2005CN1658315A Optical recording medium, recording/reproducing apparatus, and recording/reproducing method
08/24/2005CN1658286A Magnetic device and magnetic memory
08/24/2005CN1657295A Replaceable memory device for a consumable substance container, and methods
08/24/2005CN1216425C Ferroelectric memory device and its manufacturing method, and hybrid device
08/23/2005US6934645 Temperature sensor scheme
08/23/2005US6934424 E-field-modulated bistable molecular mechanical device
08/23/2005US6934216 Semiconductor memory device
08/23/2005US6934215 Semiconductor memory device having duty cycle correction circuit and interpolation circuit interpolating clock signal in the semiconductor memory device
08/23/2005US6934214 Semiconductor memory device having a hierarchical I/O structure
08/23/2005US6934212 Semiconductor apparatus
08/23/2005US6934211 DRAM with refresh control function
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