Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2014
06/24/2014US8760943 Semiconductor apparatus
06/24/2014US8760936 Multi-rank partial width memory modules
06/24/2014US8760933 Circuits, systems, and methods for driving high and low voltages on bit lines in non-volatile memory
06/24/2014US8760932 Determination of memory read reference and programming voltages
06/24/2014US8760931 Semiconductor device
06/24/2014US8760928 NAND flash biasing operation
06/24/2014US8760927 Efficient static random-access memory layout
06/24/2014US8760923 Non-volatile memory (NVM) that uses soft programming
06/24/2014US8760922 System and method for micro-tiering in non-volatile memory
06/24/2014US8760919 Nonvolatile memory device and method of reading data in nonvolatile memory device
06/24/2014US8760916 Circuit and system of using at least one junction diode as program selector for memories
06/24/2014US8760915 High speed low power magnetic devices based on current induced spin-momentum transfer
06/24/2014US8760914 Magnetic memory write circuitry
06/24/2014US8760913 Magnetic detecting element and magnetic sensor utilizing same
06/24/2014US8760912 Eight transistor soft error robust storage cell
06/24/2014US8760911 Memory system configured for use in a binary predictor
06/24/2014US8760910 Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
06/24/2014US8760909 Memory and manufacturing method thereof
06/24/2014US8760908 Non-volatile semiconductor memory device
06/24/2014US8760907 Analog memories utilizing ferroelectric capacitors
06/24/2014US8760906 Techniques for reducing disturbance in a semiconductor memory device
06/24/2014US8759980 Forming array contacts in semiconductor memories
06/24/2014US8759926 Semiconductor physical quantity sensor
06/24/2014US8758909 Scalable magnetoresistive element
06/19/2014WO2014092774A1 Apparatus and method for reducing leakage power of a circuit
06/19/2014WO2014092143A1 Semiconductor device
06/19/2014WO2014090406A1 Method, device, and system including configurable bit-per-cell capability
06/19/2014WO2014066160A3 Structures for connecting mram cells
06/19/2014US20140169116 Circuitry and methods minimizing output switching noise through split-level signaling and bus division enabled by a third power supply
06/19/2014US20140169111 Device including a plurality of memory banks and a pipeline control circuit configured to execute a command on the plurality of memory banks
06/19/2014US20140169087 Memory element and memory apparatus
06/19/2014US20140169086 Common source semiconductor memory device
06/19/2014US20140169085 Voltage-controlled magnetic memory element with canted magnetization
06/19/2014US20140169084 Memory device
06/19/2014US20140169083 Magnetoresistive layer structure with voltage-induced switching and logic cell application
06/19/2014US20140169082 Thermal spin torqure transfer magnetoresistive random access memory
06/19/2014US20140169080 Thermal spin torqure transfer magnetoresistive random access memory
06/19/2014US20140169079 Method and apparatus for sensing the state of a magnetic tunnel junction (mtj)
06/19/2014US20140169078 Piezoelectronic memory
06/19/2014US20140169077 Operation aware auto-feedback sram
06/19/2014US20140169075 Memory array voltage source controller for retention and write assist
06/19/2014US20140169074 Memory elements with stacked pull-up devices
06/19/2014US20140169072 Semiconductor device
06/19/2014US20140169071 Semiconductor memory device
06/19/2014US20140169063 Method and apparatus for reading variable resistance memory elements
06/19/2014US20140169061 Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
06/19/2014US20140169060 Pulse Generator and Ferroelectric Memory Circuit
06/19/2014US20140169058 Semiconductor device and data processing system
06/19/2014US20140169057 Semiconductor device and information processing system having the same
06/18/2014EP2744108A2 Pulse generator and ferroelectric memory circuit
06/18/2014EP2744002A1 Memory device
06/18/2014EP2742506A1 Systems and methods involving multi-bank, dual- or multi-pipe srams
06/18/2014CN103875038A Method and apparatus of reducing leakage power in multiple port Sram memory cell
06/18/2014CN103872242A Thermal spin torqure transfer magnetoresistive random access memory
06/18/2014CN103871463A Phase change memory array stacked structure and operating method thereof
06/18/2014CN103871462A Resistive random access memory equalization and sensing
06/18/2014CN103871461A Copy-on-write circuit suitable for static random access memory
06/18/2014CN103871460A Memory elements with stacked pull-up devices
06/18/2014CN103871459A Reducing the power consumption of memory devices
06/18/2014CN103871458A Integrated circuit, data processing method thereof, decoder, and memory
06/18/2014CN103871457A System and method for performing sram write assist
06/18/2014CN103871452A Memories with front end precharge
06/18/2014CN102084428B Multi-mode memory device and method
06/18/2014CN102017008B Localized calibration of programmable digital logic cells
06/18/2014CN101908369B Semiconductor memory device
06/18/2014CN101836259B Method and apparatus for programming memory cell array
06/18/2014CN101771131B Method for fabricating resistive memory device
06/18/2014CN101548331B Programmable CSONOS logic element
06/17/2014USRE44950 Method for driving a nonvolatile semiconductor memory device
06/17/2014US8756464 Flash memory device and flash memory programming method equalizing wear-level
06/17/2014US8756450 Memory channel having deskew separate from redrive
06/17/2014US8756401 Method for controlling non-volatile semiconductor memory system
06/17/2014US8756395 Controlling DRAM at time DRAM ready to receive command when exiting power down
06/17/2014US8756368 Memory controller with refresh logic to accommodate low-retention storage rows in a memory device
06/17/2014US8755247 System and method for processing signals in high speed DRAM
06/17/2014US8755244 Write contention-free, noise-tolerant multi-port bitcell
06/17/2014US8755239 Read assist circuit for an SRAM
06/17/2014US8755235 Voltage generation circuit which is capable of executing high-speed boost operation
06/17/2014US8755233 Memory system
06/17/2014US8755232 Hot carrier programming in NAND flash
06/17/2014US8755231 Flash memory
06/17/2014US8755230 Semiconductor memory device
06/17/2014US8755229 Limiting flash memory over programming
06/17/2014US8755224 Non-volatile memory device and related read method
06/17/2014US8755223 Three dimensional non-volatile storage with asymmetrical vertical select devices
06/17/2014US8755222 Bipolar spin-transfer switching
06/17/2014US8755221 Emulation of static random access memory (SRAM) by magnetic random access memory (MRAM)
06/17/2014US8755220 Hybrid superconducting-magnetic memory cell and array
06/17/2014US8755219 Hierarchical wordline loadless 4GST-SRAM with a small cell area
06/17/2014US8755218 Multiport memory element circuitry
06/17/2014US8755217 Semiconductor memory device
06/17/2014US8755216 Programmable resistance memory with feedback control
06/17/2014US8755213 Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
06/17/2014US8755212 Non-volatile graphene-drum memory chip
06/17/2014US8754687 Frequency-doubling delay locked loop
06/17/2014US8754671 Field programmable gate array utilizing two-terminal non-volatile memory
06/12/2014WO2014089182A1 A nonvolatile magnetic logic device
06/12/2014WO2014088803A1 Non-volatile storage nand string select gate voltage lowered during programming
06/12/2014WO2014088802A1 Local internal discovery and configuration of individually selected and jointly selected devices
06/12/2014WO2014088090A1 Semiconductor device
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