Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2014
06/04/2014CN103839577A 存储电路 The memory circuit
06/04/2014CN102203871B Semiconductor integrated circuit
06/04/2014CN102203868B Resistive memory
06/04/2014CN101960532B Systems, methods, and apparatuses to save memory self-refresh power
06/04/2014CN101861622B Magnetic element having reduced current density
06/04/2014CN101714409B Non-volatile memory and control with improved partial page program capability
06/03/2014US8743653 Reducing dynamic power consumption of a memory circuit
06/03/2014US8743630 Current sense amplifier with replica bias scheme
06/03/2014US8743624 Programming and selectively erasing non-volatile storage
06/03/2014US8743617 Nonvolatile memory including plural memory cells stacked on substrate
06/03/2014US8743616 Write pre-compensation for nonvolatile memory
06/03/2014US8743614 Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
06/03/2014US8743611 Non-volatile semiconductor memory device
06/03/2014US8743608 Nonvolatile memory apparatus and verification method thereof
06/03/2014US8743607 Semiconductor memory device for storing multivalued data
06/03/2014US8743606 Natural threshold voltage distribution compaction in non-volatile memory
06/03/2014US8743604 Nonvolatile memory devices having improved read reliability
06/03/2014US8743603 Efficient data storage in multi-plane memory devices
06/03/2014US8743602 Nonvolatile memory device
06/03/2014US8743601 Non volatile semiconductor memory device and manufacturing method thereof
06/03/2014US8743600 Processors and systems using cell-refreshed phase-change memory
06/03/2014US8743599 Approach for phase change memory cells targeting different device specifications
06/03/2014US8743598 Reversing a potential polarity for reading phase-change cells to shorten a recovery delay after programming
06/03/2014US8743597 Self-referenced magnetic random access memory element comprising a synthetic storage layer
06/03/2014US8743596 Magnetoresistive random access memory
06/03/2014US8743595 Size-reduced magnetic memory cell
06/03/2014US8743594 Memory element and memory device
06/03/2014US8743593 Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
06/03/2014US8743592 Memory circuit properly workable under low working voltage
06/03/2014US8743591 Semiconductor memory device and method for driving the same
06/03/2014US8743590 Memory device and semiconductor device using the same
06/03/2014US8743589 Arrays of vertically stacked tiers of non-volatile cross point memory cells and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
06/03/2014US8743588 Resistance-change memory device and method of operating the same
06/03/2014US8743587 Semiconductor memory device
06/03/2014US8743586 Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
06/03/2014US8743584 Shift register memory and driving method thereof
06/03/2014US8743581 Memory devices having break cells
06/03/2014US8743580 Apparatus for high speed ROM cells
06/03/2014US8742520 Three axis magnetic sensor device and method
06/03/2014US8742519 Magnetic storage element and magnetic memory
06/03/2014US8742390 Logic compatible RRAM structure and process
06/03/2014CA2735725C Memory device for resistance-based memory applications
05/2014
05/30/2014WO2014080756A1 Semiconductor device
05/30/2014WO2014080184A1 Low-power sram cells
05/30/2014WO2014079747A1 Rram implication logic gates
05/30/2014WO2014043574A3 Reference cell repair scheme
05/30/2014WO2014004104A3 Configuration for power reduction in dram
05/29/2014US20140149654 Data independent periodic calibration using per-pin vref correction technique for single-ended signaling
05/29/2014US20140149653 Variable mapping of memory accesses to regions within a memory
05/29/2014US20140149648 Memory system with user configurable density/performance option
05/29/2014US20140147702 Thin Film With Tuned Anisotropy and Magnetic Moment
05/29/2014US20140146603 Nonvolatile memory device including sudden power off detection circuit and sudden power off detection method thereof
05/29/2014US20140146600 Memory system having variable operating voltage and related method of operation
05/29/2014US20140146599 Magnetoresistive random access memory (mram) differential bit cell and method of use
05/29/2014US20140146598 Reduced leakage memory cells
05/29/2014US20140146597 Dynamic random access memory apparatus
05/29/2014US20140146593 Method And Structure For Resistive Switching Random Access Memory With High Reliable And High Density
05/29/2014US20140146591 Method for improving data retention in a 2t/2c ferroelectric memory
05/29/2014US20140145772 Storage circuit
05/29/2014US20140144873 Plasma etching method
05/28/2014EP2736045A1 Magnetic random access memory (MRAM) cell with low power consumption
05/28/2014EP2736044A1 Rram implication logic gates
05/28/2014DE10361038B4 Modifizierbarer Bitleitungs-Leseverstärker Modifiable bit line sense amplifier
05/28/2014DE10346961B4 Spannungsregler mit verteiltem Ausgangstransistor Voltage regulator with distributed output transistor
05/28/2014DE102012111414A1 Speicherschaltung Memory circuit
05/28/2014DE102008014310B4 Speichersteuerung, Speichervorrichtung, Verfahren und System zum Austritt aus einer leistungssparenden Betriebsart eines Speichers Memory controller, memory device, method and system for exiting a power saving mode of a memory
05/28/2014DE102006048319B4 Multichip-Halbleiterspeicherelement Multi-chip semiconductor memory element
05/28/2014DE102004011425B4 Speicherzellenfolgen in einem Widerstands-Kreuzungspunkt-Speicherzellarray Memory cell strings in a resistive cross-point memory cell array
05/28/2014CN103827971A 具有使用多页的组合验证的加速的写入后读取的非易失性存储器和方法 Non-volatile memory and method with the use of a combination of a plurality of pages written verification accelerated read
05/28/2014CN103827969A 反铁磁性存储设备 Antiferromagnetic storage devices
05/28/2014CN103824590A 一种三态10管sram存储单元电路设计 A three-state 10 sram memory cell circuit design
05/28/2014CN103824589A 一种同步存储器 A synchronous memory
05/28/2014CN103824588A 一种对磁多畴态进行调控的方法 A kind of magnetic multidomain state regulate the method
05/28/2014CN102099865B 用于在闪存存储器中每信号电平编程多个编程值的方法和装置 Method and apparatus for programming a plurality of signal levels in each of the programmed value for the flash memory
05/28/2014CN101740118B 相变和阻变随机存取存储器及其执行突发模式操作的方法 The method of phase-change and resistive random access memory and Burst Mode operation
05/28/2014CN101661992B 相变存储单元器件的复合电极结构 Phase change storage unit composite electrode structure components
05/27/2014US8737153 Memory device, method of operating the same, and apparatus including the same
05/27/2014US8737147 Nonvolatile memory apparatus
05/27/2014US8737140 Semiconductor memory device and method of operating the same
05/27/2014US8737139 Determining soft data for combinations of memory cells
05/27/2014US8737135 Method for and flash memory device having improved read performance
05/27/2014US8737134 Nonvolatile semiconductor storage device
05/27/2014US8737133 Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
05/27/2014US8737131 Programming memory cells using smaller step voltages for higher program levels
05/27/2014US8737129 Nonvolatile memory device and read method thereof
05/27/2014US8737126 Data writing method, and memory controller and memory storage apparatus using the same
05/27/2014US8737125 Aggregating data latches for program level determination
05/27/2014US8737124 Semiconductor device
05/27/2014US8737123 Semiconductor device, information processing system including same, and controller for controlling semiconductor device
05/27/2014US8737122 Nonvolatile memory device
05/27/2014US8737121 Drift-insensitive or invariant material for phase change memory
05/27/2014US8737120 Reference voltage generators and sensing circuits
05/27/2014US8737119 Magnetic memory cell and magnetic random access memory
05/27/2014US8737118 Semiconductor memory device and test method therefor
05/27/2014US8737117 System and method to read a memory cell with a complementary metal-oxide-semiconductor (CMOS) read transistor
05/27/2014US8737116 Semiconductor device and its manufacturing method
05/27/2014US8737115 Method of forming process for variable resistive element and non-volatile semiconductor memory device
05/27/2014US8737114 Switching device structures and methods
05/27/2014US8737113 Memory resistor having multi-layer electrodes
05/27/2014US8737112 Resistive memory devices, initialization methods, and electronic devices incorporating same
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