| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 07/23/2014 | EP2756530A1 Strain induced reduction of switching current in spintransfer torque switching devices |
| 07/23/2014 | EP2756502A1 Memory system with a layer comprising a dedicated redundancy area |
| 07/23/2014 | EP2756501A1 Adaptive read wordline voltage boosting apparatus and method for multi-port sram |
| 07/23/2014 | EP2756500A1 Apparatus for selective word-line boost on a memory cell |
| 07/23/2014 | EP2756499A1 Improving sram cell writability |
| 07/23/2014 | CN203733474U 一种同步存储器 A synchronous memory |
| 07/23/2014 | CN103946997A 具有双隧道势垒的磁器件及其制造方法 A magnetic device and manufacturing method of the double tunnel barrier |
| 07/23/2014 | CN103946974A 存储元件、存储装置 Storage element, the storage device |
| 07/23/2014 | CN103946817A 半导体存储装置及其驱动方法 Semiconductor memory device and driving method |
| 07/23/2014 | CN103946805A 用于动态读取的清除技术 Clear technology for dynamic read |
| 07/23/2014 | CN103943144A 参考电阻优化的相变存储器读电路及参考电阻优选方法 Reference resistor optimization phase change memory read circuit and a reference resistor preferred method |
| 07/23/2014 | CN103943143A Sram电压辅助 Sram voltage auxiliary |
| 07/23/2014 | CN103943142A 一种静态随机存储器及其位线预充电自定时电路 One kind of static random access memory and a bit line precharge self-timed circuit |
| 07/23/2014 | CN103943141A 用于实施基于地址的sram访问协助的系统和方法 System and method for implementing sram-based access assistance addresses |
| 07/23/2014 | CN103943140A 具有感测放大器的互补金属氧化物半导体（cmos）动态随机存取存储器（dram）单元 A sense amplifier having complementary metal oxide semiconductor (cmos) dynamic random access memory (dram) unit |
| 07/23/2014 | CN103943139A 存储器漏电控制装置 Memory leakage control device |
| 07/23/2014 | CN103943138A 每单元多比特存储装置 Multi-bit per cell storage device |
| 07/23/2014 | CN102157196B 基于自参考反相器的1t1r型阻变存储器及其读写方法 1t1r type resistive memory based self-reference of the inverter and read and write methods |
| 07/23/2014 | CN101866684B 半导体存储器装置及其刷新控制方法 The semiconductor memory device and its refresh control method |
| 07/23/2014 | CN101681666B 用于浮体单元内存的读出装置及其方法 Floating body memory cell reading device and a method for |
| 07/22/2014 | USRE45035 Verification circuits and methods for phase change memory array |
| 07/22/2014 | US8788906 Memory device with internal signal processing unit |
| 07/22/2014 | US8788898 Remote testing system |
| 07/22/2014 | US8788780 Signal restoration circuit, latency adjustment circuit, memory controller, processor, computer, signal restoration method, and latency adjustment method |
| 07/22/2014 | US8788743 Mapping between program states and data patterns |
| 07/22/2014 | US8788741 Method and apparatus adapted to prevent code data from being lost in solder reflow |
| 07/22/2014 | US8787107 Memory device power control |
| 07/22/2014 | US8787102 Memory device and signal processing circuit |
| 07/22/2014 | US8787094 Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
| 07/22/2014 | US8787090 Memory cell operation |
| 07/22/2014 | US8787088 Optimized erase operation for non-volatile memory with partially programmed block |
| 07/22/2014 | US8787086 Inhibiting address transitions in unselected memory banks of solid state memory circuits |
| 07/22/2014 | US8787085 Semiconductor memory having both volatile and non-volatile functionality and method of operating |
| 07/22/2014 | US8787084 Semiconductor device and driving method thereof |
| 07/22/2014 | US8787083 Memory circuit |
| 07/22/2014 | US8787081 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array |
| 07/22/2014 | US8787078 Method and apparatus for reducing read disturb in memory |
| 07/22/2014 | US8787077 Nonvolatile memory device |
| 07/22/2014 | US8787076 Magnetic memory and method of manufacturing the same |
| 07/22/2014 | US8787075 Low-voltage semiconductor memory |
| 07/22/2014 | US8787074 Static random access memory test structure |
| 07/22/2014 | US8787073 Signal processing circuit and method for driving the same |
| 07/22/2014 | US8787072 Floating-body/gate DRAM cell |
| 07/22/2014 | US8787071 Nonvolatile storage device and method for writing into the same |
| 07/22/2014 | US8787070 Reference cell circuit and variable resistance nonvolatile memory device including the same |
| 07/22/2014 | US8787069 Write and erase scheme for resistive memory device |
| 07/22/2014 | US8787068 Semiconductor device |
| 07/22/2014 | US8787067 Semiconductor device and method of controlling semiconductor device |
| 07/22/2014 | US8787066 Method for forming resistive switching memory elements with improved switching behavior |
| 07/22/2014 | US8787064 Programmable bipolar electronic device |
| 07/22/2014 | US8787063 Analog memories utilizing ferroelectric capacitors |
| 07/22/2014 | US8785288 Methods of making memory cells |
| 07/17/2014 | WO2014110566A1 Non-volatile register with magnetic tunneling junctions and with edge detector for low read disturb of the mtjs |
| 07/17/2014 | WO2014110341A1 Resistive random access memory cells having variable switching characteristics |
| 07/17/2014 | WO2014110183A1 Systems and methods to update reference voltages in response to data retention in non-volatile memory |
| 07/17/2014 | WO2014110050A1 Memory device having an adaptable number of open rows |
| 07/17/2014 | WO2014109978A1 Mg discontinuous insertion layer for improving mt j shunt |
| 07/17/2014 | WO2014108215A1 Asymmetrical memristor |
| 07/17/2014 | US20140201436 DRAM Memory Interface |
| 07/17/2014 | US20140201435 Heterogeneous memory systems, and related methods and computer-readable media for supporting heterogeneous memory access requests in processor-based systems |
| 07/17/2014 | US20140198597 Dynamic random access memory for communications systems |
| 07/17/2014 | US20140198596 Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof |
| 07/17/2014 | US20140198568 Non-volatile memory systems and methods |
| 07/17/2014 | US20140198564 Magnetoresistive element and method of manufacturing the same |
| 07/17/2014 | US20140198563 Magnetic tunneling junction non-volatile register with feedback for robust read and write operations |
| 07/17/2014 | US20140198562 Ten-transistor dual-port sram with shared bit-line architecture |
| 07/17/2014 | US20140198560 Memory cell and memory device having the same |
| 07/17/2014 | US20140197847 Resistive memory element sensing using averaging |
| 07/17/2014 | DE102013200615A1 Komplementärer Widerstandsschalter, dessen Herstellung und Verwendung Resistance complementary switch, its preparation and use |
| 07/17/2014 | DE102013103400B4 Sram-zelle, die finfets umfasst SRAM cell, which comprises FinFETs |
| 07/16/2014 | EP2755208A1 Multiport memory with matching address and data line control |
| 07/16/2014 | EP2755207A1 Multiport memory with matching address control |
| 07/16/2014 | CN103930949A 具有双栅预充电和解码晶体管的读出放大器 Has a double gate transistor precharge and decode the sense amplifier |
| 07/16/2014 | CN103928610A 浮栅型阻变存储单元结构及其操作方法 Resistive-type floating gate memory cell structure and methods of operating |
| 07/16/2014 | CN103928607A 提供具有易锥各向异性的磁性隧道结元件的方法和系统 Provide a method and system with easy cone anisotropy magnetic tunnel junction element |
| 07/16/2014 | CN103928465A 一种基于半浮栅的双管增益存储器器件结构 Based on the double-barreled semi-floating gate memory device structures gain |
| 07/16/2014 | CN103928051A 一种随机存储器位单元、随机存储器和电子芯片 One kind of random access memory bit cells, random access memory, and electronic chip |
| 07/16/2014 | CN103928050A 存储单元和具有存储单元的存储设备 A storage unit and a storage device having a storage unit, |
| 07/16/2014 | CN103928049A 带有匹配地址控制的多端口存储器 With a matching address control of multi-port memory |
| 07/16/2014 | CN103928048A 带有匹配地址和数据线控制的多端口存储器 With a matching address and data lines to control the multi-port memory |
| 07/16/2014 | CN102339638B 具有电子反射绝缘间隔层的stram Stram with an electronic reflective insulating spacer layer |
| 07/16/2014 | CN102203869B 利用场感应反铁磁性或铁磁性耦合的自旋转矩转移单元结构 Using field sensing ferromagnetic or antiferromagnetic coupling of the spin torque transfer unit structure |
| 07/16/2014 | CN102194757B 半导体器件的制造方法和半导体器件 The method of manufacturing a semiconductor device and a semiconductor device |
| 07/16/2014 | CN101874271B 读出列选择和读出数据总线预充电控制信号的互锁 The readout column selection and readout data bus precharge control signal interlocking |
| 07/16/2014 | CN101030592B 磁存储器件 Magnetic memory device |
| 07/15/2014 | US8782474 Advanced converters for memory cell sensing and methods |
| 07/15/2014 | US8780665 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy |
| 07/15/2014 | US8780662 Semiconductor memory device including initialization signal generation circuit |
| 07/15/2014 | US8780661 Self refresh pulse generation circuit |
| 07/15/2014 | US8780658 Leakage reduction in memory devices |
| 07/15/2014 | US8780642 Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
| 07/15/2014 | US8780641 Method and apparatus for dynamic sensing window in memory |
| 07/15/2014 | US8780638 Random telegraph signal noise reduction scheme for semiconductor memories |
| 07/15/2014 | US8780637 Updating reference voltages to compensate for changes in threshold voltage distributions of nonvolatile memory cells |
| 07/15/2014 | US8780629 Semiconductor device and driving method thereof |
| 07/15/2014 | US8780625 Memory array |
| 07/15/2014 | US8780624 Memory array |
| 07/15/2014 | US8780623 Semiconductor memory device and control method thereof |
| 07/15/2014 | US8780622 Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance |
| 07/15/2014 | US8780621 Semiconductor integrated circuit system and method for driving the same |