Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2014
07/03/2014DE102013102427A1 Dual-Port-SRAM-Verbindungsstruktur Dual-port SRAM connecting structure
07/02/2014EP2748819A1 Read compensation for partially programmed blocks of non-volatile storage
07/02/2014CN203689919U 一种sram的读取、缓存电路 Sram one kind of read cache circuit
07/02/2014CN103907156A 用于自旋转移扭矩切换设备的耐热垂直磁各向异性耦合元件 Used to heat the perpendicular magnetic anisotropy coupling element spin transfer torque switching device
07/02/2014CN103903646A 一种低写功耗的两端口静态随机存储器 Write a low-power two-port static random access memory
07/02/2014CN103903645A 一种辐射加固设计的静态随机存储单元 Reinforcement design a static random access memory cell radiation
07/02/2014CN102292774B 存储器装置以及控制该存储器装置的存储器控制器 A memory device and memory means for controlling the memory controller
07/02/2014CN102177554B 补偿在非易失性存储器中的读操作期间的耦合 During a read operation is coupled to compensate the non-volatile memory
07/02/2014CN102176510B 磁电阻效应元件和使用它的磁电阻随机存取存储器 Magneto-resistance effect element and a magnetic resistance to use it a random access memory
07/02/2014CN102160119B 非易失性存储器中感测期间的基于数据状态的温度补偿 Temperature compensation based on the data state non-volatile memory sensing period
07/02/2014CN102117651B 静态随机存取存储器电路与静态随机存取存储单元阵列 Static random access memory circuits and static random access memory cell array
07/01/2014USRE44978 Method of verifying programming of a nonvolatile memory device
07/01/2014US8769234 Memory modules and devices supporting configurable data widths
07/01/2014US8769194 Information processing system including semiconductor device having self-refresh mode
07/01/2014US8767496 Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
07/01/2014US8767485 Operation method of a supply voltage generation circuit used for a memory array
07/01/2014US8767478 Non-volatile semiconductor storage device
07/01/2014US8767476 Charge loss compensation methods and apparatus
07/01/2014US8767475 Method of programming a nonvolatile memory device
07/01/2014US8767471 Systems and methods for auto-calibration of a storage memory controller
07/01/2014US8767469 Method of operating nonvolatile memory device
07/01/2014US8767468 Nonvolatile memory device capable of reducing read disturbance and read method thereof
07/01/2014US8767465 Nonvolatile memory device and method of manufacturing the same
07/01/2014US8767458 Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
07/01/2014US8767457 Apparatus relating to a memory cell having a floating body
07/01/2014US8767456 Multi-bit memory with selectable magnetic layer
07/01/2014US8767455 Spin torque transfer memory cell structures and methods
07/01/2014US8767454 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
07/01/2014US8767453 Magnetic device with exchange bias
07/01/2014US8767452 Semiconductor memory device
07/01/2014US8767451 Internal voltage generating circuit of phase change random access memory device and method thereof
07/01/2014US8767450 Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
07/01/2014US8767449 Memory devices with in-bit current limiters
07/01/2014US8767448 Magnetoresistive random access memory
07/01/2014US8767447 Drift-insensitive or invariant material for phase change memory
07/01/2014US8767446 Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
07/01/2014US8767445 SRAM circuits for circuit identification using a digital fingerprint
07/01/2014US8767444 Radiation-hardened memory element with multiple delay elements
07/01/2014US8767443 Semiconductor memory device and method for inspecting the same
07/01/2014US8767442 Semiconductor device including memory cell array
07/01/2014US8767441 Switching device having a non-linear element
07/01/2014US8767440 Sector array addressing for ECC management
07/01/2014US8767439 Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device
07/01/2014US8767437 Nonvolatile semiconductor memory device operating stably and method of control therein
07/01/2014US8767436 Memory support provided with memory elements of ferroelectric material and non-destructive reading method thereof
07/01/2014US8767432 Method and apparatus for controlled application of Oersted field to magnetic memory structure
07/01/2014US8767431 High current capable access device for three-dimensional solid-state memory
07/01/2014US8766629 Frequency conversion apparatus and frequency conversion method
07/01/2014US8766383 Method and system for providing a magnetic junction using half metallic ferromagnets
07/01/2014US8766382 MRAM cells including coupled free ferromagnetic layers for stabilization
07/01/2014US8765566 Line and space architecture for a non-volatile memory device
07/01/2014US8765489 Semiconductor device and method for fabricating the same
06/2014
06/26/2014WO2014100619A1 Integrated mram cache module
06/26/2014WO2014099031A1 Method, apparatus and system for responding to a row hammer event
06/26/2014WO2014099002A1 Mechanism to provide high performance and fairness in a multi-threading computer system
06/26/2014WO2014097957A1 Semiconductor device
06/26/2014US20140181613 Memory controller method and system compensating for memory cell data losses
06/26/2014US20140181393 Memory Systems and Methods for Dynamically Phase Adjusting a Write Strobe and Data to Account for Receive-Clock Drift
06/26/2014US20140181391 Hardware chip select training for memory using write leveling mechanism
06/26/2014US20140177372 Semiconductor device that performs refresh operation
06/26/2014US20140177371 Suspend sdram refresh cycles during normal ddr operation
06/26/2014US20140177370 Method, apparatus and system for responding to a row hammer event
06/26/2014US20140177367 Semiconductor device including plural chips stacked to each other
06/26/2014US20140177360 Device and method for controlling self-refresh
06/26/2014US20140177331 Semiconductor device and method for forming the same
06/26/2014US20140177330 Vertical bjt for high density memory
06/26/2014US20140177328 Multi-Bit Magnetic Memory Cell
06/26/2014US20140177327 Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
06/26/2014US20140177326 Electric field enhanced spin transfer torque memory (sttm) device
06/26/2014US20140177325 Integrated mram module
06/26/2014US20140177324 Single-Port Read Multiple-Port Write Storage Device Using Single-Port Memory Cells
06/26/2014US20140177323 Bit-flipping in memories
06/26/2014US20140177312 Semiconductor device and method of manufacturing semiconductor device
06/26/2014DE112012003852T5 Antiferromagnetische Speichereinheit Antiferromagnetic storage unit
06/25/2014CN203673830U 用于自旋状态元件的装置、磁解复用器、磁自旋逻辑单元和计算机系统 Means for the spin state of the element, the magnetic demultiplexer, magnetic spin logic unit and computer systems
06/25/2014CN103890855A 自旋霍尔效应磁性设备、方法及应用 Spin Hall effect magnetic devices, methods and applications
06/25/2014CN103890854A 磁振子磁随机存取存储器器件 Magnon magnetic random access memory devices
06/25/2014CN103890850A 使用热数据对3d栈式存储器的动态操作 Thermal data for dynamic operation of 3d stackers
06/25/2014CN103887425A 磁性结和磁存储器以及用于提供磁性结的方法 Magnetic junctions and magnetic memory and a method for providing a magnetic junction
06/25/2014CN103887424A 磁性结及其提供方法以及磁存储器 Junction to provide a method and a magnetic memory and a magnetic
06/25/2014CN103886914A 通道控制电路以及具有通道控制电路的半导体器件 Channel control circuit and a control circuit having a channel semiconductor device
06/25/2014CN103886896A 一种采用静态写技术减小写功耗的静态随机存储器 One kind of static write writing technique reduces the power consumption of the static random access memory
06/25/2014CN103886895A 一种静态随机存取存储器时序控制电路 One kind of a static random access memory timing control circuit
06/25/2014CN103886894A 基于交叉耦合密勒电容抗seu加固的新型存储单元 Miller capacitance-based cross-coupling reinforcement of anti-seu new storage unit
06/25/2014CN102571072B 配置状态可定制的可编程逻辑电路 Configuration state customizable programmable logic circuit
06/25/2014CN102543159B 一种ddr控制器及其实现方法和芯片 One kind of ddr controller and its implementation and chip
06/25/2014CN102446547B 交点自对准的可编程存储装置 Programmable memory means the intersection of self-alignment
06/25/2014CN102282619B 用以在ddr dram写入期间三态控制未使用数据字节的方法、系统及设备 For the tri-state control during ddr dram unused data byte is written to methods, systems and equipment
06/25/2014CN102194848B 自旋存储器和自旋晶体管 Spin and spin transistor memory
06/25/2014CN102017004B 磁阻随机存取存储器(mram)位单元的阵列结构设计 Design of the array structure magnetoresistive random access memory (mram) bit cells
06/25/2014CN101763889B 信息存储装置及其操作方法 The information storage device and an operation method
06/25/2014CN101727973B 半导体存储器装置 The semiconductor memory device
06/25/2014CN101393888B 栈式1T-n存储单元结构 Stacker 1T-n memory cell structure
06/24/2014US8762654 Selectively scheduling memory accesses in parallel based on access speeds of memory
06/24/2014US8762626 Data modification based on matching bit patterns
06/24/2014US8760957 Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
06/24/2014US8760953 Sense amplifier with selectively powered inverter
06/24/2014US8760951 Method of reading data in a non-volatile memory device
06/24/2014US8760946 Method and apparatus for memory access delay training
06/24/2014US8760944 Memory component that samples command/address signals in response to both edges of a clock signal
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