Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2014
08/28/2014WO2014130604A1 Smart read scheme for memory array sensing
08/28/2014WO2014130327A1 Configurable single-ended driver
08/28/2014US20140241095 Semiconductor System
08/28/2014US20140241094 Memory device refresh commands on the fly
08/28/2014US20140241089 Read assist circuit for an sram technical field
08/28/2014US20140241088 Semiconductor device having complementary bit line pair
08/28/2014US20140241087 Sense amplifier
08/28/2014US20140241083 Read assist circuit for an sram technical field
08/28/2014US20140241054 Semiconductor device and electronic device
08/28/2014US20140241053 Trench isolation implantation
08/28/2014US20140241052 Carbon nanotube memory cell with enhanced current control
08/28/2014US20140241047 Self-aligned process for fabricating voltage-gated mram
08/28/2014US20140241045 Semi-conductor storing apparatus
08/28/2014US20140241032 Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
08/28/2014US20140241027 Static random access memory unit cell structure and static random access memory unit cell layout structure
08/28/2014US20140241025 Dram cell design with folded digitline sense amplifier
08/28/2014US20140239248 Three-dimensional nonvolatile memory and method of fabrication
08/28/2014DE112012005060T5 Höhere Energieeinsparung bei Speicher-Arrays Higher energy savings in storage arrays
08/28/2014DE112012004989T5 Erweiterter Datenaufbewahrungsmodus für dynamische Speicher Extended data storage mode for dynamic memory
08/28/2014DE10334387B4 System zum Überwachen interner Spannungen auf einer integrierten Schaltung A system for monitoring internal voltages on an integrated circuit
08/27/2014EP2769382A1 Instruction to compute the distance to a specified memory boundary
08/26/2014US8819329 Nonvolatile storage device, access device and nonvolatile storage system
08/26/2014US8817569 Immunity against temporary and short power drops in non-volatile memory
08/26/2014US8817566 Memory system
08/26/2014US8817563 Sensing circuit for programmable resistive device using diode as program selector
08/26/2014US8817551 Semiconductor memory device
08/26/2014US8817548 Semiconductor memory device having an electrically floating body transistor
08/26/2014US8817546 Complementary electrical erasable programmable read only memory
08/26/2014US8817545 Semiconductor memory devices, systems including non-volatile memory read threshold voltage determination
08/26/2014US8817543 Flash memory
08/26/2014US8817541 Data search using bloom filters and NAND based content addressable memory
08/26/2014US8817540 Nonvolatile memory device and program method thereof
08/26/2014US8817538 Nonvolatile semiconductor memory device and method for erasing data thereof
08/26/2014US8817536 Current controlled recall schema
08/26/2014US8817534 Techniques for providing a semiconductor memory device
08/26/2014US8817533 Crosspoint array and method of use with a crosspoint array having crossbar elements having a solid electrolyte material used as a rectifier with a symmetric or substantially symmetric resistive memory
08/26/2014US8817532 Semiconductor memory apparatus, and set program control circuit and program method therefor
08/26/2014US8817531 Magnetic random access memory device and method for producing a magnetic random access memory device
08/26/2014US8817530 Data-masked analog and digital read for resistive memories
08/26/2014US8817529 Magnetic memory device and reading method of magnetic memory device
08/26/2014US8817528 Device comprising a plurality of static random access memory cells and method of operation thereof
08/26/2014US8817527 Semiconductor device
08/26/2014US8817525 Semiconductor memory device
08/26/2014US8817522 Unipolar memory devices
08/26/2014US8817521 Control method for memory cell
08/26/2014US8817520 Two capacitor self-referencing nonvolatile bitcell
08/26/2014US8817516 Memory circuit and semiconductor device
08/26/2014US8817515 Nonvolatile semiconductor memory device
08/26/2014US8816422 Multi-trapping layer flash memory cell
08/26/2014US8815678 Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
08/26/2014US8815612 Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
08/21/2014WO2014126820A2 Group word line erase and erase-verify methods for 3d non-volatile memory
08/21/2014WO2014125254A1 Sram cells
08/21/2014US20140237177 Memory module and memory system having the same
08/21/2014US20140237174 Highly Efficient Design of Storage Array Utilizing Multiple Cache Lines for Use in First and Second Cache Spaces and Memory Subsystems
08/21/2014US20140233332 Semiconductor memory system
08/21/2014US20140233325 Dynamic random access memory with fully independent partial array refresh function
08/21/2014US20140233312 Semiconductor memory device for storing multivalued data
08/21/2014US20140233306 Bipolar spin-transfer switching
08/21/2014US20140233305 Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same
08/21/2014US20140233304 Semiconductor device and control method of the same
08/21/2014US20140233303 SRAM Multiplexing Apparatus
08/21/2014US20140233302 Write-tracking circuitry for memory devices
08/21/2014US20140233297 Graphene Ferroelectric Device and Opto-Electronic Control of Graphene Ferroelectric Memory Device
08/21/2014US20140233296 Ferroelectric memory device and method for manufacturing same
08/21/2014US20140231925 Semiconductor device having sufficient process margin and method of forming same
08/21/2014US20140231820 Memory device using graphene as charge-trap layer and method of operating the same
08/21/2014DE10315028B4 Backupspeichersteuereinheit mit reduziertem Stromverbrauch Backup memory controller with reduced power consumption
08/21/2014DE102008024519B4 Ferroelektrische Speicherzelle, Herstellungsverfahren und integrierte Schaltung mit der ferroelektrischen Speicherzelle A ferroelectric memory cell manufacturing process and integrated circuit with the ferroelectric memory cell
08/20/2014EP2766906A1 Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line
08/19/2014US8812933 Memory system and operating method thereof
08/19/2014US8811535 Time-frequency space constructions of families of signals
08/19/2014US8811110 Configuration for power reduction in DRAM
08/19/2014US8811108 Code coverage circuitry
08/19/2014US8811105 Information processing system including semiconductor device having self-refresh mode
08/19/2014US8811103 Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage
08/19/2014US8811100 Cell array and memory device including the same
08/19/2014US8811099 Period signal generation circuits
08/19/2014US8811098 Period signal generation circuit
08/19/2014US8811094 Non-volatile multi-level memory device and data read method
08/19/2014US8811092 Apparatus configured to program a memory cell to a target threshold voltage representing a data pattern of more than one bit
08/19/2014US8811091 Non-volatile memory and method with improved first pass programming
08/19/2014US8811089 Nonvolatile semiconductor memory device
08/19/2014US8811084 Memory array with power-efficient read architecture
08/19/2014US8811083 Semiconductor memory device and method of operating the same
08/19/2014US8811080 Flash memory system and word line interleaving method thereof
08/19/2014US8811076 Systems and methods of updating read voltages
08/19/2014US8811075 Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
08/19/2014US8811073 Magnetic device, and method for reading from and writing to said device
08/19/2014US8811072 Magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure
08/19/2014US8811071 Method of writing to a spin torque magnetic random access memory
08/19/2014US8811070 Write-tracking circuitry for memory devices
08/19/2014US8811069 Memory device and systems including the same
08/19/2014US8811068 Integrated circuit devices and methods
08/19/2014US8811067 Semiconductor device
08/19/2014US8811066 Semiconductor memory device and driving method thereof
08/19/2014US8811065 Performing error detection on DRAMs
08/19/2014US8811064 Semiconductor memory device including multilayer wiring layer
08/19/2014US8811063 Memory cells, methods of programming memory cells, and methods of forming memory cells
08/19/2014US8811062 Variable resistance memory device and method of manufacturing the same
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