Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2014
05/27/2014US8737111 Memory cell with resistance-switching layers
05/27/2014US8736004 Magnetic tunnel junction for MRAM applications
05/27/2014US8735972 SRAM cell having recessed storage node connections and method of fabricating same
05/27/2014US8735964 Charge carrier device
05/27/2014US8735958 Multi-layer polysilicon suppression of implant species penetration
05/27/2014US8735865 Semiconductor memory device
05/27/2014US8735245 Metal oxide resistive switching memory and method for manufacturing same
05/27/2014CA2643280C Method of reducing electro-static discharge (esd) from conductors on insulators
05/22/2014WO2014078348A1 Ups systems and methods using ups modules with differential mode inductor coupling
05/22/2014WO2014078124A1 Pattern fortification for hdd bit patterned media pattern transfer
05/22/2014WO2014077154A1 Semiconductor device
05/22/2014WO2014075823A1 Back-up and restoration of data between volatile and flash memory
05/22/2014US20140140156 Memory operations using system thermal sensor data
05/22/2014US20140140154 Semiconductor memory device and refresh leveraging driving method thereof
05/22/2014US20140140145 Semiconductor device
05/22/2014US20140140144 Sense amplifier circuit
05/22/2014US20140140127 Magnetic random access memory apparatus, methods for programming and verifying reference cells therefor
05/22/2014DE19924568B4 Ladungspumpe Charge pump
05/22/2014DE19758673B4 Empfängerschaltung zur Verwendung in einem Signalübertragungssystem A receiver circuit for use in a signal transmission system
05/22/2014DE19744620B4 Signalübertragungssystem zur Übertragung von Signalen zwischen LSI-Chips A signal transmission system for transmitting signals between LSI chips
05/22/2014DE112004001864B4 Verfahren und Vorrichtung zur Verbesserung der Stabilität einer 6-Transistor-CMOS-SRAM-Zelle A method and apparatus for improving the stability of a 6-transistor CMOS SRAM cell
05/22/2014DE102012022728A1 Verfahren zur Steuerung eines Flash-Speichers zur Massenspeicherung, der von einem an einen Host anschließbaren Kommunikationsgerät umfasst ist, und Computerprogrammprodukt zur Ausführung des Verfahrens A method for controlling a flash memory for mass storage that is comprised in a connectable to a host communication device, and computer program product for carrying out the method
05/22/2014DE102007005701B4 Speichersteuerschaltung und -verfahren Memory control circuit and method
05/21/2014EP2732449A1 Mram sensing with magnetically annealed reference cell
05/21/2014CN103814410A 具有包括专用冗余区域的层的存储系统 Having a layer comprising a dedicated redundant area of ​​the storage system
05/21/2014CN103814409A 使用以二进制格式和多状态格式写入的数据的比较的非易失性存储器中的写入后读取 After using comparative data in binary format and written in a format of a multi-state non-volatile memory is written to read
05/21/2014CN103814408A 用于非易失性存储器的部分编程块的读取补偿 Read part of the programming block compensation for non-volatile memory
05/21/2014CN103811053A 非挥发性动态随机存取存储器装置、方法及单元阵列 Non-volatile dynamic random access memory device, the method and the cell array
05/21/2014CN103811052A 阻变存储器件及其驱动方法 Resistive switching memory device and driving method
05/21/2014CN103811051A 一种分层存储器阵列及其工作方法 A hierarchical memory array and its working methods
05/21/2014CN103811050A 存储电路及操作存储电路的方法 The method of operation of the memory circuit and the memory circuit,
05/21/2014CN103811049A 并串转换电路、接口电路和控制装置 Serial conversion circuit, interface circuit and control devices
05/21/2014CN103811048A 一种混合存储器结构的低功耗刷新方法 A low-power hybrid method for refreshing the memory structure
05/21/2014CN103811047A 一种基于分块dram的低功耗刷新方法 A block-based low-power dram refresh method
05/21/2014CN103811046A 一种新型高可靠性读取电路 A new high-reliability read circuit
05/21/2014CN103811045A 一种高可靠性、亦可多比特存储的双功能存储单元 A highly reliable, can store multi-bit dual-function storage unit
05/21/2014CN103810119A 一种利用三维集成电路片上温差降低stt-ram功耗的缓存设计方法 An advantage of reducing the temperature difference between the three-dimensional integrated circuit chip cache stt-ram-power design methodology
05/21/2014CN103810118A 一种新型的stt-mram缓存设计方法 A new design method of caching stt-mram
05/21/2014CN102292775B 存储器的适应性擦除和软编程 Adaptive memory erased and soft programming
05/21/2014CN102246237B 多位多铁性存储器元件 Many multiferroic memory elements
05/21/2014CN101727969B 操作半导体装置的方法 The method of operation of the semiconductor device
05/20/2014US8730758 Adjustment of write timing in a memory device
05/20/2014US8730740 Semiconductor memory device
05/20/2014US8730738 Nonvolatile memory devices and methods of operating nonvolatile memory devices
05/20/2014US8730737 Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
05/20/2014US8730735 Method of programming a semiconductor memory device
05/20/2014US8730734 Access line dependent biasing schemes
05/20/2014US8730731 Semiconductor memory device for compensating for operating voltage difference between near cell and far cell in consideration of cell position, and memory card and memory system including the same
05/20/2014US8730729 Systems and methods for averaging error rates in non-volatile devices and storage systems
05/20/2014US8730728 EEPROM cell with transfer gate
05/20/2014US8730726 Multi-gate bandgap engineered memory
05/20/2014US8730724 Common line current for program level determination in flash memory
05/20/2014US8730720 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
05/20/2014US8730719 MRAM with metal gate write conductors
05/20/2014US8730718 Memory architecture and cell design employing two access transistors
05/20/2014US8730717 Semiconductor device
05/20/2014US8730716 Embedded magnetic random access memory (MRAM)
05/20/2014US8730715 Tamper-resistant MRAM utilizing chemical alteration
05/20/2014US8730714 Magnetic tunnel junction and spin transfer torque random access memory having the same
05/20/2014US8730713 SRAM cell writability
05/20/2014US8730712 SRAM including write assist circuit and method of operating same
05/20/2014US8730711 Low noise memory array
05/20/2014US8730710 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
05/20/2014US8730708 Performing forming processes on resistive memory
05/20/2014US8729647 Thermally stable magnetic tunnel junction cell and memory device including the same
05/15/2014WO2014074632A1 Configurable embedded memory system
05/15/2014WO2014074408A2 3d stacked non-volatile storage programming to conductive state
05/15/2014WO2014074362A1 Concurrent use of sram cells with both nmos and pmos pass gates in a memory system
05/15/2014WO2014073584A1 Information processing apparatus, method for controlling the same and program
05/15/2014US20140137211 Apparatus-specific information generation device, apparatus-specific information generation method, terminal apparatus, and authentication system
05/15/2014US20140136774 Management of memory refresh power consumption
05/15/2014US20140133255 Semiconductor device, refresh control method thereof and computer system
05/15/2014US20140133251 Semiconductor storage apparatus
05/15/2014US20140133248 Apparatus and method to adjust clock duty cycle of memory
05/15/2014US20140133234 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
05/15/2014US20140133225 Data compensating method for flash memory
05/15/2014US20140133221 Magnectic Structure
05/15/2014US20140133220 Methods and devices for avoiding lower page corruption in data storage devices
05/15/2014US20140133219 Power Line Lowering for Write Assisted Control Scheme
05/15/2014US20140133218 Memory Cell
05/15/2014US20140133217 Concurrent use of sram cells with both nmos and pmos pass gates in a memory system
05/15/2014US20140133212 Non-Volatile Counter Utilizing a Ferroelectric Capacitor
05/15/2014US20140133211 Resistive random access memory equalization and sensing
05/15/2014US20140131653 Unipolar programmable metallization cell
05/15/2014DE102013101036A1 Neuartiger ansatz für die 4f2-treiberausbildung für einen rram und einen mram mit hoher dichte Novel approach for the 4f2-driver training for a RRAM and MRAM with high density
05/15/2014DE102007019825B4 Integrierte Schaltung Integrated circuit
05/15/2014DE102006053744B4 Lese-, Schreib- und Zugriffsverfahren für ein Widerstandsspeicherbauelement und Widerstandsspeicherbauelement Literacy and access method for a resistive memory device and resistive memory device
05/15/2014DE102006012896B4 Halbleiterbauelement und Datenabtaststeuerverfahren Semiconductor device and Datenabtaststeuerverfahren
05/15/2014DE102005053171B4 Auffrischungsverfahren, Speicher, Speichersystem und Betriebsverfahren Rejuvenation process, memory, storage system and method of operation
05/15/2014DE102005003863B4 Speichervorrichtung mit Nicht-Variabler Schreiblatenz Memory device with non-variable write latency
05/14/2014EP2729875A1 Differential vector storage for non-volatile memory
05/14/2014CN1717743B 用于在磁致电阻存储器件的写操作期间改善磁场产生的方法和设备 During a write operation method for a magnetoresistive memory element and to improve the magnetic field generating device
05/14/2014CN103797540A 采用被分解为多遍的阶梯波形的编程算法 Is decomposed into multiple passes using a staircase waveform programming algorithms
05/14/2014CN103797539A 用于多端口sram的自适应读取字线电压升高设备和方法 Adaptive read word line voltage for multi-port sram rise apparatus and method
05/14/2014CN103797538A 用于存储器单元上的选择性字线升压的设备 Selective memory cells on the word line boosting device for
05/14/2014CN103797400A Mems显示像素控制电路及方法 Mems display pixel control circuit and method
05/14/2014CN103794716A 磁存储器件及其制造方法 The method of manufacturing a magnetic memory device and
05/14/2014CN103794715A 一种基于电压控制的磁存储器 A magnetic memory voltage control based
05/14/2014CN103794249A 用于改进升压箝位的对位线编程 Boost for improving the clamp on the bit line programming
05/14/2014CN103794244A 一种基于spi接口的相变存储器读出电路及方法 A readout circuit and method based on phase change memory spi interface
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