Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2014
06/12/2014WO2014086990A1 Varistor
06/12/2014WO2014086718A1 Self-referenced magnetic random access memory (mram) and method for writing to the mram cell with increased reliability and reduced power consumption
06/12/2014US20140164692 Managing errors in a dram by weak cell encoding
06/12/2014US20140164691 Memory architecture for display device and control method thereof
06/12/2014US20140160874 Power management in semiconductor memory system
06/12/2014US20140160840 Memory device and driving method thereof
06/12/2014US20140160836 Three-dimensional memory array and operation scheme
06/12/2014US20140160835 Spin transfer torque magnetic memory device
06/12/2014US20140160834 Frequency Resistance Access Magnetic Memory
06/12/2014DE102013224082A1 System und Verfahren zur Ausführung einer SRAM-Schreibunterstützung System and method for performing an SRAM write support
06/11/2014EP2741296A1 Self-referenced magnetic random access memory (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption
06/11/2014EP2741295A1 Spin transfer torque magnetic memory device
06/11/2014EP2740123A1 Multi-bit magnetic memory cell
06/11/2014EP2740122A1 Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
06/11/2014CN203644398U 防止存储器芯片内部存储单元上下电被改写电路结构 To prevent the upper and lower memory cells inside the memory chip is rewritten electrical circuit configuration
06/11/2014CN103858349A Semiconductor device
06/11/2014CN103858246A Strain induced reduction of switching current in spintransfer torque switching devices
06/11/2014CN103858171A Reduced noise DRAM sensing
06/11/2014CN103858170A Contact structure and method for variable impedance memory element
06/11/2014CN103858169A Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
06/11/2014CN103855301A Multi-stage resistance conversion storage unit and storage device
06/11/2014CN103855299A Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
06/11/2014CN103855297A MAGNETIC JUNCTION, method for providing same, and magnetic memory comprising same
06/11/2014CN103854697A Static random access memory cell comprising fin type field effect transistor
06/11/2014CN103854696A SRAM cell comprising FinFET
06/11/2014CN103854695A Voltage generating device
06/11/2014CN103854694A Multi-phase clock generation circuit
06/11/2014CN103854693A Magnetoresistive random access memory (mram) differential bit cell and method of use
06/11/2014CN103853522A Folded fifo memory generator
06/11/2014CN102314938B Memory chip and memory device using the same
06/11/2014CN101842843B MRAM testing
06/11/2014CN101751994B Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
06/11/2014CN101114693B Semiconductor device using magnetic domain wall moving
06/10/2014US8750068 Memory system and refresh control method thereof
06/10/2014US8750066 Temperature compensation of conductive bridge memory arrays
06/10/2014US8750062 Memory element and method for determining the data state of a memory element
06/10/2014US8750049 Word line driver for memory
06/10/2014US8750038 Nonvolatile memory device and method of operating the same
06/10/2014US8750036 Unipolar spin-transfer switching memory unit
06/10/2014US8750035 Memory element and memory device
06/10/2014US8750034 Magnetoresistance element and semiconductor memory device
06/10/2014US8750033 Reading a cross point cell array
06/10/2014US8750032 Semiconductor recording device
06/10/2014US8750031 Test structures, methods of manufacturing thereof, test methods, and MRAM arrays
06/10/2014US8750030 Magnetoresistive element and magnetic random access memory
06/10/2014US8750029 Magnetoresistive effect element and magnetic memory
06/10/2014US8750028 Magnetic memory element and driving method for same
06/10/2014US8750027 SRAM devices and methods of manufacturing the same
06/10/2014US8750026 Integrated circuits with asymmetric and stacked transistors
06/10/2014US8750025 Data cells with drivers and methods of making and operating the same
06/10/2014US8750024 Memcapacitor
06/10/2014US8750023 Semiconductor memory device
06/10/2014US8750021 Bipolar resistive-switching memory with a single diode per memory cell
06/10/2014US8750020 Resistive switching for non volatile memory device using an integrated breakdown element
06/10/2014US8750019 Resistive memory using SiGe material
06/10/2014US8750018 Sense amplifier circuitry for resistive type memory
06/10/2014US8750017 Resistance-change memory
06/10/2014US8750016 Resistive memory and program verification method thereof
06/10/2014US8750015 Integrated circuit comprising a FRAM memory and method for granting read-access to a FRAM memory
06/10/2014US8750013 Racetrack memory with low-power write
06/10/2014US8750012 Racetrack memory with low-power write
06/05/2014WO2014085347A1 An integrated circuit having improved radiation immunity
06/05/2014WO2014085268A1 Apparatus, method and system for memory device access with a multi-cycle command
06/05/2014WO2014085267A1 Apparatus, method and system for providing termination for multiple chips of an integrated circuit package
06/05/2014WO2014085257A1 Adaption of memory operation parameters according to predicted variations in cell dimension
06/05/2014WO2014084917A1 Row hammer monitoring based on stored row hammer threshold value
06/05/2014WO2014082897A1 Magnetic random access memory (mram) cell with low power consumption
06/05/2014WO2014082896A1 Magnetoresistive element having enhanced exchange bias and thermal stability for spintronic devices
06/05/2014WO2014059083A3 Improved seed layer for multilayer magnetic materials
06/05/2014US20140156923 Row hammer monitoring based on stored row hammer threshold value
06/05/2014US20140153352 Semiconductor device including plural chips stacked to each other
06/05/2014US20140153345 Method of operating write assist circuitry
06/05/2014US20140153328 Complementary soi lateral bipolar for sram in a cmos platform
06/05/2014US20140153327 Voltage controlled spin transport channel
06/05/2014US20140153325 Body voltage sensing based short pulse reading circuit
06/05/2014US20140153324 Magnetic Tunnel Junction Memory Device
06/05/2014US20140153323 Methods for Operating SRAM Cells
06/05/2014US20140153322 SRAM Cell Comprising FinFETs
06/05/2014US20140153321 Methods and Apparatus for FinFET SRAM Arrays in Integrated Circuits
06/05/2014US20140153320 Semiconductor storage device
06/05/2014US20140153319 Semiconductor memory device
06/05/2014US20140153313 System and Methods Using a Multiplexed Reference for Sense Amplifiers
06/05/2014US20140153312 Memory cells having ferroelectric materials
06/05/2014US20140153311 Semiconductor storage device
06/05/2014DE102013103400A1 Sram-zelle, die finfets umfasst SRAM cell, which comprises FinFETs
06/05/2014DE102007030973B4 Speichervorrichtung und Verfahren zur Betätigung einer Speichervorrichtung, insbesondere eines DRAM Memory device and method of operating a memory device, in particular a DRAM
06/04/2014EP2738770A1 Low resistance area magnetic stack
06/04/2014EP2738769A1 Magnetoresistive element having enhanced exchange bias and thermal stability for spintronic devices
06/04/2014EP2737488A2 Post-write read in non-volatile memories using comparison of data as written in binary and multi-state formats
06/04/2014EP2737487A1 Simultaneous sensing of multiple wordlines and detection of nand failures
06/04/2014EP2737486A2 Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
06/04/2014EP2737485A1 Nvm bitcell with a replacement control gate and additional floating gate
06/04/2014EP2737484A1 Non-volatile memory saving cell information in a non-volatile memory array
06/04/2014CN1836288B Read bias scheme for phase change memories
06/04/2014CN103843067A On chip dynamic read for non-volatile storage
06/04/2014CN103843066A Pseudo-inverter circuit with multiple independent gate transistors
06/04/2014CN103843065A Improving sram cell writability
06/04/2014CN103839580A Writing acceleration method and system for phase change memory
06/04/2014CN103839579A Dynamic random access memory apparatus
06/04/2014CN103839578A Method for prolonging data hold time of NAND-based solid-state memory
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