| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 09/28/2005 | EP1580306A2 Single crystal investment cast components and methods of making same |
| 09/28/2005 | CN1673424A Synthesis method for nonlinear optical crystal Nb2O5:KTP |
| 09/28/2005 | CN1673095A Prepn process of nano CdSe crystal |
| 09/28/2005 | CN1220799C Process and apparatus for preparation of silicon crystals with preduced metal content |
| 09/27/2005 | US6949474 Method of manufacturing a semiconductor device and a semiconductor manufacture system |
| 09/22/2005 | WO2005088688A1 Substrate processing apparatus and method for manufacturing semiconductor device |
| 09/22/2005 | WO2005088687A1 Method for manufacturing gallium nitride semiconductor substrate |
| 09/22/2005 | WO2005088666A1 Process for producing layered member and layered member |
| 09/22/2005 | WO2005087986A1 A substrate having a film grown thereon & a method of forming a film on a substrate |
| 09/22/2005 | WO2005087984A1 Method for growing large-size perfect lithium triborate crystals |
| 09/22/2005 | WO2005087983A2 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 09/22/2005 | WO2005071715A3 Nanotube fabrication basis |
| 09/22/2005 | US20050208687 Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate |
| 09/22/2005 | US20050207960 charging and mixing silicon oxide and gallium dopes in a crucible, then melting and cooling to incorporate gallium in the crystals used as substrates for photoelectric cells |
| 09/22/2005 | US20050206271 Potassium niobate deposited body, method for manufacturing the same, piezoelectric thin film resonator, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| 09/22/2005 | US20050206020 Self assembled three-dimensional photonic crystal |
| 09/22/2005 | US20050205873 Method for making compound semiconductor and method for making semiconductor device |
| 09/22/2005 | US20050205871 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
| 09/22/2005 | US20050205014 Dual ion beam assisted deposition of biaxially textured template layers |
| 09/22/2005 | US20050205010 In situ growth of oxide and silicon layers |
| 09/22/2005 | US20050205003 Silicon carbide single crystal and method and apparatus for producing the same |
| 09/22/2005 | US20050205000 Low defect density silicon |
| 09/22/2005 | US20050204999 Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 09/22/2005 | US20050204998 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 09/22/2005 | DE102004010377A1 Herstellung von Substratwafern für defektarme Halbleiterbauteile, ihre Verwendung, sowie damit erhaltene Bauteile Preparation of substrate wafers for low-defect semiconductor devices, their use, and thus obtained components |
| 09/22/2005 | CA2476028A1 Novel purified polypeptides from staphylococcus pneumoniae |
| 09/21/2005 | EP1577956A1 Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible |
| 09/21/2005 | EP1577933A2 Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate |
| 09/21/2005 | EP1577425A1 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME |
| 09/21/2005 | EP1576655A2 Stabilized semiconductor nanocrystals |
| 09/21/2005 | EP1576591A2 Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
| 09/21/2005 | CN1671892A Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby |
| 09/21/2005 | CN1671891A Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
| 09/21/2005 | CN1670918A Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate |
| 09/21/2005 | CN1670917A Method for making compound semiconductor and method for making semiconductor device |
| 09/21/2005 | CN1670916A Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 09/21/2005 | CN1670268A Method and device for growing sapphire crystal by laser |
| 09/21/2005 | CN1670267A Microwave hydrothermal synthesis method for nanometer crystal strontium titanate barium |
| 09/21/2005 | CN1669920A Method for preparing one-dimensional nanostructure in anode alumina template |
| 09/20/2005 | US6946373 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 09/20/2005 | US6946370 Semiconductor crystal producing method |
| 09/20/2005 | US6946317 Method of fabricating heteroepitaxial microstructures |
| 09/20/2005 | US6946308 Method of manufacturing III-V group compound semiconductor |
| 09/20/2005 | US6946030 Method for the production of a silica glass crucible with crystalline regions from a porous silica glass green body |
| 09/15/2005 | WO2005085503A1 Method for producing corundam crystal |
| 09/15/2005 | WO2005084225A2 System for continuous growing of monocrystalline silicon |
| 09/15/2005 | WO2005007568A3 Gas storage medium and methods |
| 09/15/2005 | WO2004102619A3 Chemical vapor deposition epitaxial growth |
| 09/15/2005 | US20050202665 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 09/15/2005 | US20050202284 Protection of the SiC surface by a GaN layer |
| 09/15/2005 | US20050201901 Crystal forming devices and systems and methods for using the same |
| 09/15/2005 | US20050200235 Potassium niobate deposited body, method for manufacturing the same, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| 09/15/2005 | US20050199180 Method for producing barium titanium oxide single-crystal piece using containerless processing |
| 09/15/2005 | DE10393690T5 III-V Halbleiter und Verfahren zur seiner Herstellung III-V semiconductors and methods for its preparation |
| 09/15/2005 | DE10393271T5 Wärmeabschirmungselement einer Vorrichtung zum Heraufziehen eines Siliciumeinkristalls Heat shielding member of an apparatus for pulling up a silicon single crystal |
| 09/15/2005 | DE102004009130A1 Einlasssystem für einen MOCVD-Reaktor An intake system for an MOCVD reactor |
| 09/14/2005 | EP1574602A1 Process for producing single crystal of compound semiconductor and crystal growing apparatus |
| 09/14/2005 | EP0993235B1 Thin film forming method, display and color filter |
| 09/14/2005 | CN1668786A Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method |
| 09/14/2005 | CN1668370A High temperature high pressure capsule for processing material in supercritical fluid |
| 09/09/2005 | WO2005083809A1 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
| 09/09/2005 | WO2005083161A1 Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof |
| 09/09/2005 | WO2005029550A3 Method and system for producing crystalline thin films with a uniform crystalline orientation |
| 09/08/2005 | US20050196547 Manufacturing method of colored diamond by ion implantation and heat treatment |
| 09/08/2005 | US20050193942 Method for making substrate wafers for low-defect semiconductor components, obtained thereby and uses thereof |
| 09/08/2005 | DE102004008754A1 Herstellung von spannungsarmen, nicht (111)-orientierten, großvolumigen Einkristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung Preparation of low stress not (111) oriented, large-volume single crystals of low birefringence and a homogeneous refractive index, and the use thereof |
| 09/08/2005 | DE102004008753A1 Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits |
| 09/08/2005 | DE102004008752A1 Herstellung von großvolumigen CaF2-Einkristallen für die Verwendung als optische Bauelemente mit einer optischen Achse parallel zur (100) oder (110)-Kristallachse Manufacture of large-volume CaF2 single crystals for use as optical components having an optical axis parallel to the (100) or (110) crystal axis |
| 09/08/2005 | DE102004008749A1 Verfahren zur Herstellung eines großvolumigen CaF2-Einkristalles mit geringer Streuung und verbesserter Laserstabilität, sowie ein solcher Kristall und dessen Verwendung A method for producing a large volume of CaF2 single crystal with low scattering and improved laser stability, as well as such a crystal and its use |
| 09/07/2005 | EP1571242A2 Production of substrate wafers for low defect semiconductor components, applications thereof and components made therewith |
| 09/07/2005 | EP1570101A2 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof |
| 09/07/2005 | CN1666319A Group III nitride semiconductor substrate and its manufacturing method |
| 09/07/2005 | CN1665969A Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method |
| 09/07/2005 | CN1664179A Method of manufacturing group-III nitride crystal |
| 09/07/2005 | CN1664178A Tungstate laser crystal and its preparation method and use |
| 09/07/2005 | CN1664177A Metaborate laser crystal and its preparation method and use |
| 09/07/2005 | CN1664176A Method for preparing magnesia crystal by using temperature control arc furnace |
| 09/07/2005 | CN1664175A Visual low oblique zone melting growth device of crystals and growth method therefor |
| 09/07/2005 | CN1664162A Manufacturing method of colored diamond by ion implantation and heat treatment |
| 09/07/2005 | CN1218374C Semiconductor substrate based on III family nitride and its mfg. method |
| 09/06/2005 | US6940098 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 09/06/2005 | CA2261769C Catio3 interfacial template structure on superconductor |
| 09/01/2005 | WO2005080948A1 Process for preparing caf2 lens blanks especially for 193 nm and 157 nm lithography with minimized defects |
| 09/01/2005 | WO2005080648A1 Method for producing compound single crystal and production apparatus for use therein |
| 09/01/2005 | WO2005080646A1 Method for manufacturing single crystal semiconductor |
| 09/01/2005 | WO2005080645A2 Diamond structure separation |
| 09/01/2005 | WO2005080631A1 Inlet system for an mocvd reactor |
| 09/01/2005 | US20050191773 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device |
| 09/01/2005 | US20050189544 Methods of forming a high conductivity diamond film and structures formed thereby |
| 09/01/2005 | US20050188914 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
| 09/01/2005 | DE10393222T5 Nadelförmiger Siliziumkristall und Verfahren für seine Erzeugung Needle-shaped crystal silicon and method for its production |
| 09/01/2005 | DE102004005878A1 Verfahren zur Überwachung der Herstellung von Biomolekülkristallen A method for monitoring the manufacture of Biomolekülkristallen |
| 08/31/2005 | EP1569264A1 Method for producing silicon epitaxial wafer |
| 08/31/2005 | EP1569019A1 Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method |
| 08/31/2005 | EP1568083A2 Gallium nitride-based devices and manufacturing process |
| 08/31/2005 | EP1567531A2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 08/31/2005 | EP1036863B1 Method for synthesizing n-type diamond having low resistance |
| 08/31/2005 | EP1034325B1 Gallium nitride epitaxial layer |
| 08/31/2005 | CN2721283Y Composite crystallizer for single crystal and directional cylindrulite composite crystalline blade |
| 08/31/2005 | CN1662681A N-type semiconductor diamond producing method and semiconductor diamond |