Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2005
10/20/2005WO2005098097A1 Manufacture of cadmium mercury telluride
10/20/2005WO2005098096A1 Self-coated single crystal, and production apparatus and process therefor
10/20/2005US20050233910 Thick films of yba<sb>2</sb>cu<sb>3</sb>o <sb>7-y</sb> and preparation method thereof
10/20/2005US20050233495 Novel technique to grow high quality ZnSe epitaxy layer on Si substrate
10/20/2005US20050233263 Growth of carbon nanotubes at low temperature
10/20/2005US20050233171 Epitaxial oxide films via nitride conversion
10/20/2005US20050233163 Titanium dioxide - Cobalt magnetic film and method of its manufacture
10/20/2005US20050232320 Method of manufacturing optical crystal element of laser
10/20/2005US20050230726 Ferroelectric rare-earth manganese-titanium oxides
10/20/2005US20050229842 Manufacturing method of silicon wafer
10/20/2005US20050229841 Protein temperature evaporation-controlled crystallization device and method thereof
10/20/2005US20050229840 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
10/20/2005US20050229747 Silver Crystals Through Tollen's Reaction
10/20/2005DE10393635T5 Verfahren zur Herstellung eines Siliziumwafers A method for producing a silicon wafer
10/20/2005CA2561648A1 Manufacture of cadmium mercury telluride
10/19/2005EP1586681A1 Titanium oxide grain, process and apparatus for producing the same, and method of treating with the titanium oxide
10/19/2005CN1684925A Method for producing inverse opaline structures
10/19/2005CN1684276A Serial tellurium-cadmium-mercury infrared material and its preparing method and use
10/19/2005CN1683609A Neodymium doped lithium lanthanum tungstate lacer crystla and its prepn
10/19/2005CN1683608A Sapphire (Al2O3 single crystal) growing technology
10/19/2005CN1683607A Process for producing high temperature super conductivity material magnesium oxide single crystal and preparing device
10/19/2005CN1683605A Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
10/19/2005CN1683604A Process for preparing titanium doped lithium aluminate wafer
10/19/2005CN1683603A Process and its device for preparing fibrous zinc oxide whisker
10/18/2005US6955985 Domain epitaxy for thin film growth
10/18/2005US6955858 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
10/18/2005US6955719 Manufacturing methods for semiconductor devices with multiple III-V material layers
10/16/2005CA2502875A1 Protein temperature evaporation-controlled crystallization device and method thereof
10/13/2005WO2005096351A2 Fabrication and use of superlattice
10/13/2005WO2005095682A1 Gallium nitride single crystal growing method and gallium nitride single crystal
10/13/2005WO2005095681A1 Method for producing iii group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
10/13/2005WO2005095680A1 Semiconductor single crystal manufacturing equipment and graphite crucible
10/13/2005WO2005075339A3 Novel nanostructures and method for selective preparation
10/13/2005US20050227849 Optical element made of fluoride crystal
10/13/2005US20050227472 Group III-V Crystal and Manufacturing method thereof
10/13/2005US20050227458 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
10/13/2005US20050227457 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
10/13/2005US20050227453 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
10/13/2005US20050227117 Single crystals and methods for fabricating same
10/13/2005US20050226806 Photonic crystals having a skeleton structure
10/13/2005US20050225215 Crystal base plate and pressing device
10/13/2005US20050223994 Substrate susceptors for receiving semiconductor substrates to be deposited upon and methods of depositing materials over semiconductor substrates
10/13/2005US20050223968 Patterned atomic layer epitaxy
10/13/2005US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth
10/13/2005DE19649409B4 Verfahren zum Herstellen eines Diamantfilms auf einem Substrat A method for producing a diamond film on a substrate
10/13/2005CA2567032A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures
10/12/2005EP1583858A2 Sacrificial template method of fabricating a nanotube
10/12/2005CN1681977A Acicular silicon crystal and process for producing the same
10/12/2005CN1681974A Improvemrnt of process for obtaining of bulk monocrystallline gallium-containing nitride
10/12/2005CN1680637A Preparation of single-crystal of thermal negative expanding material ZrW2O8
10/12/2005CN1680636A Preparation of beta-FeSi2 single crystal by pulsing laser method
10/12/2005CN1680635A Device and method for supplementing melt growth crystal by crucible lifting method
10/12/2005CN1222642C Semi-insulating silicon carbide without vanadium domination
10/06/2005WO2005093795A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
10/06/2005WO2005093137A1 Reduction of carrot defects in silicon carbide epitaxy
10/06/2005WO2005093136A1 Support and method for processing semiconductor substrate
10/06/2005WO2005092791A1 Silicon casting device and multicrystal silicon ingot producing method
10/06/2005WO2005092784A1 Synthesis of platinum and palladium quantum well size nano-particles
10/06/2005WO2005077589A3 Methods for repair of single crystal superalloys by laser welding and products thereof
10/06/2005US20050221623 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same
10/06/2005US20050221515 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
10/06/2005US20050221235 Applying alternating material layers on a ridge and then removing some of the alternating layers to expose edges; exposed edges can be of nearly arbitrary length and curvature; edges can be used to fabricate an array of nano-scale-width curved wires
10/06/2005US20050220694 Method for producing nitrides
10/06/2005US20050217568 Deposition of buffer layers on textured metal surfaces
10/06/2005US20050217565 Method for epitaxial growth of a gallium nitride film separated from its substrate
10/06/2005US20050217563 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
10/06/2005US20050217561 Low-resistance n type semiconductor diamond and process for producing the same
10/06/2005DE10392313T5 Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren Gallium nitride-based devices and manufacturing processes
10/06/2005CA2555431A1 Reduction of carrot defects in silicon carbide epitaxy
10/06/2005CA2554408A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
10/05/2005EP1583140A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor
10/05/2005EP1581674A1 Method for the production of monocrystalline structures and component
10/05/2005CN1678772A Diboride single crystal substrate, semiconductor device using this and its manufacturing method
10/05/2005CN1678771A Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
10/05/2005CN1676682A Method for producing magnesia whisker using magnesite
10/05/2005CN1676681A Method for preparing high length-diameter ratio magnesia whisker
10/05/2005CN1676680A Er3+, Yb3+, Ce3+ codoped CaF2 laser crystal and its growth method
10/05/2005CN1676679A Up-conversion laser crystal Er3+, YB3+, Na+:CaF2
10/05/2005CN1676678A ZnO nano crystal column/nano crystal filament composite structure product and its preparing process
10/04/2005US6951695 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces
10/04/2005US6951575 Forming drops of mother liquor, crystallization, producing images, computer analyzing; macromolecules of protein; drug screening
09/2005
09/29/2005WO2005091028A2 Self assembled three-dimensional photonic crystal
09/29/2005WO2005090652A1 Self assembled organic nanocrystal superlattices
09/29/2005WO2005090651A1 Iron oxide whisker of high aspect ratio, titanium oxide whisker of high aspect ratio, structure containing these and process for producing them
09/29/2005WO2005090650A1 Compound semiconductor substrate
09/29/2005WO2005090649A1 Method of solid-phase flux epitaxy growth
09/29/2005WO2005090232A1 Fullerene hollow structure needle crystal and c60-c70 mixed fine wire, and method for preparation thereof
09/29/2005WO2004080889A3 Crystalline membranes
09/29/2005US20050215477 Treating agonist disorderssuch asd diabetes, obesity, heart dysfunctions, AIDS-related wasting, and kidney, neurological, whole body growth disorders by administering a crystal of an insulin-like growth factor-1 that diffracts x-ray radiation to produce a three-dimensional diffraction pattern
09/29/2005US20050215057 Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
09/29/2005US20050214991 Method and apparatus for producing semiconductor device
09/29/2005US20050214459 Diamond and aggregated carbon fiber and production methods
09/29/2005US20050214194 Biological process for the preparation of mineral crystals using seeds
09/29/2005US20050212001 Method for achieving low defect density AlGaN single crystal boules
09/29/2005US20050211987 Semiconductor device, manufacturing method thereof and manufacturing apparatus therefor
09/29/2005US20050211408 Single crystal investment cast components and methods of making same
09/29/2005US20050211160 Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof
09/29/2005US20050211159 Diamond single crystal substrate
09/29/2005US20050211158 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
09/29/2005US20050211156 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
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