Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2005
11/17/2005US20050252441 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal
11/17/2005US20050252440 Method of fabricating orientation film for liquid crystal display device
11/17/2005DE102004020656A1 Device for growing a single crystal semiconductor compound/crystal rod by a vapor pressure controlled Czochralski process providing stable and reproducible crystal growth with control of the crystal rod diameter without the use of B2O3
11/16/2005EP1595979A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
11/16/2005EP1595968A1 Heat Treatment Process for Single Crystal or Directionally Solidified Components
11/16/2005EP1594603A1 High temperature high pressure capsule for processing materials in supercritical fluids
11/16/2005EP1594426A1 Marking of diamond
11/16/2005CN1697895A III-v compound semiconductor crystal and method for production thereof
11/16/2005CN1697894A Diamond composite substrate and process for producing the same
11/16/2005CN1697884A Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
11/16/2005CN1696358A Method of manufacturing nano-wire
11/16/2005CN1696357A Sb13 (S8)3 crystalline material, preparation method and application
11/16/2005CN1227718C Method for making gallium nitride or aluminium nitride crystal
11/16/2005CN1227395C Silicon wafer and method for producing silicon wafer crystal
11/16/2005CN1227155C Preparation method of tungsten and/or molybdenum metal powder, tungsten carbide and/or molybdenum carbide
11/15/2005US6964914 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material
11/15/2005US6964705 Method for producing semiconductor crystal
11/10/2005WO2005106984A1 Method for fabricating semiconductor epitaxial layers using metal islands
11/10/2005WO2005106967A1 Method for producing a thin-film chalcopyrite compound
11/10/2005WO2005106933A1 Flexible single-crystal film and method of manufacturing the same
11/10/2005WO2005106083A1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD
11/10/2005WO2005106082A1 Preparation of nanoparticle materials
11/10/2005WO2005106062A1 Heat treatment method for monocrystalline or directionally solidified structural components
11/10/2005WO2005105672A1 Inorganic mesoporous substance having chiral twisted structure and process for producing the same
11/10/2005WO2005105670A1 Method and installation for the production of blocks of a semiconductor material
11/10/2005WO2005091028A3 Self assembled three-dimensional photonic crystal
11/10/2005WO2005004197A3 Fluidic nanotubes and devices
11/10/2005US20050250856 Ionic colloidal crystals
11/10/2005US20050250349 High-resistance silicon wafer and process for producing the same
11/10/2005US20050250298 In situ doped epitaxial films
11/10/2005US20050247267 Molecular beam source for use in accumulation of organic thin-films
11/10/2005US20050247260 Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof
11/10/2005DE102004020058A1 Verfahren zum Abscheiden einer Schicht aus einer Formgedächtnislegierung A method of depositing a layer of a shape memory alloy
11/10/2005DE102004019690A1 B-terminated surface fabrication on perovskite single crystals contacts crystal with fluid and irradiates with light of specified electron transition energy
11/10/2005DE102004018664A1 Verfahren und Anordnung zur Kristallzüchtung aus metallischen Schmelzen oder Schmelzlösungen Method and system for crystal growth from fused metals or fused solutions
11/09/2005EP1593760A1 Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof
11/09/2005CN1695253A Semi-insulating silicon carbide without vanadium domination
11/09/2005CN1694258A SOI wafer and method for producing it
11/09/2005CN1693542A Bismuth sodium potassium titanate series nonlead ferroelectric piezoelectric monocrystal and its growing method and equipment
11/09/2005CN1226432C High purity gallium for preparation of compound semiconductor, and apparatus for purifying the same
11/05/2005CA2506388A1 Surface modification of nanocrystals using multidentate polymer ligands
11/03/2005WO2005103760A1 Scintillator material based on rare earth with a reduced nuclear background
11/03/2005WO2005103343A1 Electrostatic charge controlling process for piezoelectric oxide single crystal and apparatus for electrostatic charge controlling process
11/03/2005WO2005103342A1 Method for depositing a layer consisting of a shape memory alloy
11/03/2005WO2005103341A1 Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride
11/03/2005WO2005102922A1 Nanostructures and method for making such nanostructures
11/03/2005WO2005061379A3 Template and methods for forming photonic crystals
11/03/2005US20050245095 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
11/03/2005US20050245054 Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same
11/03/2005US20050245048 SOI wafer and method for producing it
11/03/2005US20050244324 Acicular silicon crystal and process for producing the same
11/03/2005US20050242340 Strained silicon NMOS devices with embedded source/drain
11/03/2005US20050241571 Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same
11/03/2005US20050241570 Crucible and method for growing large crystals, in particular CaF2 monocrystals
11/03/2005US20050241569 Crystallization method and crystallization apparatus
11/03/2005DE202005013898U1 Calcium difluoride single crystal with small scattering (sic), refractive index difference and number of small angle grain boundaries useful in the production of computer chips and electronic circuits
11/03/2005DE102005013787A1 Arsen-Dotiermittel für das Ziehen von Siliziumeinzelkristallen, Verfahren für deren Erzeugung und Verfahren zur Erzeugung eines Siliziumeinzelkristalls unter deren Verwendung Arsenic dopant for pulling silicon single crystals, methods for their production and process for producing a silicon single crystal using them
11/03/2005CA2562646A1 Scintillator material based on rare earth with a reduced nuclear background
11/02/2005EP1592045A1 Silicon semiconductor substrate and its manufacturing method
11/02/2005EP1591566A1 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafe
11/02/2005EP1591565A1 Diamond single crystal substrate
11/02/2005EP1590509A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
11/02/2005EP1590171A2 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
11/02/2005EP1390296B1 Method for producing highly pure, granular silicon in a fluidised bed
11/02/2005CN1692506A Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator
11/02/2005CN1692499A Gallium nitride-based devices and manufacturing process
11/02/2005CN1692482A Method for manufacturing silicon wafer
11/02/2005CN1692186A Low-resistance n type semiconductor diamond and process for producing the same
11/02/2005CN1692185A Process for producing single crystal of compound semiconductor and crystal growing apparatus
11/02/2005CN1692184A Solid phase single crystal growing method
11/02/2005CN1691283A Method of growing nitride single crystal, nitride semiconductor light emitting device, method of manufacturing the same
11/02/2005CN1691281A Method for manufacturing substrate wafer used for semiconductor component with few defect, component made by the method and application thereof
11/02/2005CN1690257A La1-XPbXMnO3 compound ordered nano-line array and method for preparing same
11/02/2005CN1225572C Integrated melt method for crystal growth
11/01/2005US6960528 Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions
11/01/2005US6960255 Framework assisted crystal growth
11/01/2005US6960254 Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature
11/01/2005US6960249 Tetracalcium phosphate (TTCP) having calcium phosphate whisker on surface
11/01/2005CA2272100C Method for preparation of metal intercalated fullerene-like metal chalcogenides
10/2005
10/27/2005WO2005101530A1 Optically-regulated optical emission using colloidal quantum dot nanocrystals
10/27/2005WO2005100647A1 Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device
10/27/2005WO2005100646A1 Single crystals and methods for fabricating same
10/27/2005WO2005100645A1 Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device
10/27/2005WO2005100644A1 Method for the growth of semiconductor ribbons
10/27/2005WO2005099934A2 Method and arrangement for crystal growth from fused metals or fused solutions
10/27/2005WO2005054121A8 Nanostructures formed of branched nanowhiskers and methods of producing the same
10/27/2005US20050239274 Method for growth of group III-V semiconductor material on a dielectric
10/27/2005US20050238905 Vacancy-dominated, defect-free silicon
10/27/2005US20050238568 Method of synthesizing colloidal nanocrystals
10/27/2005US20050236556 Optically-regulated optical emission using colloidal quantum dot nanocrystals
10/27/2005US20050235907 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
10/27/2005US20050235904 Method of manufacturing nano-wire
10/26/2005EP1588406A2 Semiconductor structures with structural homogeneity
10/26/2005EP1587971A2 Method and apparatus for producing large, single-crystals of aluminum nitride
10/26/2005CN1689148A Annealed wafer and annealed wafer manufacturing method
10/26/2005CN1224735C Apparatus and method for manufacturing monocrystals, and monocrystal
10/25/2005US6958900 Multi-layered unit including electrode and dielectric layer
10/25/2005US6958286 Method of preventing surface roughening during hydrogen prebake of SiGe substrates
10/25/2005US6958254 Method to produce germanium layers
10/25/2005US6958093 Free-standing (Al, Ga, In)N and parting method for forming same
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