| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 02/16/2006 | WO2006016659A1 Nitrogen doped silicon wafer and manufacturing method thereof |
| 02/16/2006 | WO2006015990A1 Method for producing a photonic crystal comprised of a material with a high refractive index |
| 02/16/2006 | WO2005048297A3 Nanostructures including a metal |
| 02/16/2006 | WO2005010949A3 Solution to thermal budget |
| 02/16/2006 | US20060035446 Apparatus of catalytic molecule beam epitaxy and process for growing III-nitride materials using the apparatus |
| 02/16/2006 | US20060035035 Film forming method and film forming apparatus |
| 02/16/2006 | US20060033119 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 02/16/2006 | US20060032526 Thermoelectric conversion material, thermoelectric conversion device and manufacturing method thereof |
| 02/16/2006 | US20060032434 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 02/16/2006 | US20060032428 Process for obtaining of bulk monocrystalline gallium-containing nitride |
| 02/15/2006 | CN1734247A III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 02/15/2006 | CN1733634A Nanometer thread and its preparation method |
| 02/15/2006 | CN1242469C Radiator and its manufacturing method |
| 02/15/2006 | CN1242101C Method for producing organic nano tube with porous template |
| 02/14/2006 | US6997987 Optical lithography fluoride crystal annealing furnace |
| 02/14/2006 | US6997986 Method for preparing single crystal |
| 02/09/2006 | WO2006014472A1 Iii-nitride materials including low dislocation densities and methods associated with the same |
| 02/09/2006 | WO2006013826A1 Bi LAYERED COMPOUND NANOPLATE, ARRAY THEREOF, PROCESS FOR PRODUCING THEM, AND APPARATUS UTILIZING THE SAME |
| 02/09/2006 | WO2006013344A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/09/2006 | WO2006012925A1 Apparatus for growing single crystals from melt |
| 02/09/2006 | WO2006012924A1 Method of growing single crystals from melt |
| 02/09/2006 | US20060030133 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 02/09/2006 | US20060030087 Compliant substrate for a heteroepitaxial structure and method for making same |
| 02/09/2006 | US20060029832 High surface quality GaN wafer and method of fabricating same |
| 02/09/2006 | US20060029792 Process for manufacturing self-assembled nanoparticles |
| 02/09/2006 | US20060027831 Method for fabricating Group III nitride compound semiconductors and Group III nitride compound semiconductor devices |
| 02/09/2006 | US20060027161 Method for heat-treating silicon wafer and silicon wafer |
| 02/09/2006 | DE102004034667A1 Producing synthetic diamond particles comprises exposing hydrogen and fluidized carbon seed particles to an energy source |
| 02/09/2006 | CA2569832A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/08/2006 | EP1624095A2 Nitride semiconductor single-crystal substrate and method of its synthesis |
| 02/08/2006 | EP1624094A1 Method for producing single crystal and single crystal |
| 02/08/2006 | EP1623954A1 Method for preparation of metal nano-rod and use thereof |
| 02/08/2006 | EP1622833A1 Perovskite titanium-containing composite oxide particle, production process and uses thereof |
| 02/08/2006 | CN1240886C Protein crystallization equipment and protein crystallization method |
| 02/08/2006 | CN1240885C Non-linear optical crystal potassium sodium alumino borate and its preparation process and application |
| 02/08/2006 | CN1240884C Amorphous silicon crystallizing method |
| 02/07/2006 | US6995078 Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch |
| 02/02/2006 | WO2006011976A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 02/02/2006 | WO2006011389A1 METHOD FOR PRODUCING RE-Ba-Cu-O OXIDE SUPERCONDUCTOR |
| 02/02/2006 | WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds |
| 02/02/2006 | WO2005007935A3 Tough diamonds and method of making thereof |
| 02/02/2006 | US20060022308 Group III-V compound semiconductor and method for producing the same |
| 02/02/2006 | US20060021567 Apparatus for pulling single crystal |
| 02/02/2006 | DE202004020812U1 Process for preparation especially of a non-111 oriented sliding plane large volume low stress crystal useful as an optical element for preparation of excimer-lasers, wafers, computer chips, and integrated circuits |
| 02/02/2006 | DE202004020811U1 Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits |
| 02/02/2006 | DE202004020810U1 Production of low stress calcium fluoride single crystal, for optical applications, including tempering of the crystal at specified temperature for specified time giving small residual stress |
| 02/01/2006 | EP1620881A1 Method for texturing surfaces of silicon wafers |
| 02/01/2006 | EP1620294A2 Chemical vapor deposition epitaxial growth |
| 02/01/2006 | EP1587971A4 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 02/01/2006 | EP1290251B8 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 02/01/2006 | CN1729383A Increasing of resistance of crystals to optical damage |
| 02/01/2006 | CN1729317A Method for forming carbon nanotubes |
| 02/01/2006 | CN1727528A Method for developing crystal of protein |
| 02/01/2006 | CN1727527A Boron aluminate, non-linear optic crystal of boron aluminate, growth method and usage |
| 02/01/2006 | CN1727526A Method for preparing microlite silicon |
| 02/01/2006 | CN1727525A Method for preparing polysilicon |
| 02/01/2006 | CN1727524A Method for preparing needle shaped Nano ZnO line under low temperature without catalyst |
| 02/01/2006 | CN1727523A Liquid phase method for synthesizing one-dimensional super long Nano line of metal copper |
| 02/01/2006 | CN1727522A Method for developing monocrystal of potassium dihydrogen phosphate in large aperture rapidly |
| 02/01/2006 | CN1727303A Method for fabricating Mg, Ti adulterated Al2O3 crystalline material, and transparent laser ceramics |
| 02/01/2006 | CN1727283A Method for preparing superfine zinc oxide and crystal whisker of zinc oxide |
| 02/01/2006 | CN1239759C Method for preparation of directional growth columnar crystal and monocrystal titanium alloy |
| 02/01/2006 | CN1239758C Massive prepn process of nano beta-Sic crystal whisker |
| 02/01/2006 | CN1239757C Method for preparing phosphoric acid rare earth monocrystalline nano-thread |
| 02/01/2006 | CN1239423C Quartz glass component and method for production thereof |
| 01/31/2006 | US6991959 Method of manufacturing silicon carbide film |
| 01/26/2006 | WO2006009802A2 A melter assembly and method for charging a crystal forming apparatus with molten source material |
| 01/26/2006 | WO2006008957A1 Silicon epitaxial wafer and process for producing the same |
| 01/26/2006 | WO2004081987A3 Sige rectification process |
| 01/26/2006 | US20060019472 Systems and methods for nanowire growth and harvesting |
| 01/26/2006 | US20060019470 Directionally controlled growth of nanowhiskers |
| 01/26/2006 | US20060019459 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision |
| 01/26/2006 | US20060016388 Domain epitaxy for thin film growth |
| 01/26/2006 | US20060016386 Silicon wafer and method for producing silicon single crystal |
| 01/26/2006 | DE19740257B4 Impfkristallhalter Seed crystal |
| 01/26/2006 | CA2580273A1 Thin film material and method for manufacturing the same |
| 01/25/2006 | EP1619277A2 Process for making a structure having at least one precisely positioned zone of one or several semiconductor nanocrystals |
| 01/25/2006 | EP1619276A2 Homoepitaxial growth of SiC on low off-axis SiC wafers |
| 01/25/2006 | EP1375692B1 Intermetallic compound superconducting material comprising magnesium and beryllium and alloy superconducting material containing the intermetallic compound and method for preparing them |
| 01/25/2006 | CN1725444A Epitaxial growing lanthanum aluminate film material on silicon substrate and preparation method |
| 01/25/2006 | CN1724724A Growing method of yttrium aluminate crystal |
| 01/25/2006 | CN1724723A Preparation method of large diameter zone melting silicon single crystal |
| 01/25/2006 | CN1724722A Cold core shouldering micropulling proparation method of large size sapphire single crystal |
| 01/25/2006 | CN1238578C Lithium niobate crystal waveguide preparation by ion implantation and anneal |
| 01/25/2006 | CN1238577C Preparation process of lamellar nano zinc oxide mono-crystal |
| 01/25/2006 | CN1238575C Method of building crystal to grow lead zirconate titanate film |
| 01/25/2006 | CN1238574C Process for preparing CdTe nano-crystal with high photo-luminescent efficiency by hydrothermal technique |
| 01/25/2006 | CN1238193C Substrate for electronic device, electronic device and equipment containing the electronic device |
| 01/24/2006 | US6989287 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device |
| 01/24/2006 | US6989060 Calcium fluoride crystal and method and apparatus for using the same |
| 01/24/2006 | US6989059 Process for producing single crystal of compound semiconductor and crystal growing apparatus |
| 01/24/2006 | US6989058 Use of thin SOI to inhibit relaxation of SiGe layers |
| 01/19/2006 | WO2006005637A1 Method for the deposition of layers containing silicon and germanium |
| 01/19/2006 | WO2004086489A8 System and method of silicon crystallization |
| 01/19/2006 | US20060014383 Method of producing semiconductor single crystal wafer and laser processing device used therefor |
| 01/19/2006 | US20060014040 Zn and Cd metal layer act to passivate and limit the diffusion rate of oxygen molecules to the semiconductor nanocrystal core CdTe; reduce lattice mismatch, increase the quantum efficiency |
| 01/19/2006 | US20060012011 Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method |
| 01/19/2006 | US20060011126 Three-dimensional periodic structure and method for producing the same |
| 01/19/2006 | DE10036672B4 GaAs-Flüssigphasenepitaxiewafer und Verfahren zum Herstellen desselben GaAs Flüssigphasenepitaxiewafer thereof and methods for preparing |
| 01/18/2006 | EP1617466A1 Method for producing single crystal ingot from which semiconductor wafer is sliced |