| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/06/2006 | US20060148225 Methods for fabricating strained layers on semiconductor substrates |
| 07/06/2006 | US20060148186 Method and apparatus for manufacturing gallium nitride based single crystal substrate |
| 07/06/2006 | US20060145182 Nitride semiconductor element and method for manufacturing thereof |
| 07/06/2006 | US20060144322 Ultrahard diamonds and method of making thereof |
| 07/06/2006 | DE102004062355A1 Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe A method for treating a semiconductor wafer with a gaseous medium, and the semiconductor wafer thus treated |
| 07/06/2006 | CA2593085A1 Hydrodynamic cavitation crystallization device and process |
| 07/05/2006 | EP1677344A1 Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer |
| 07/05/2006 | EP1370709A4 A chemical vapor deposition process and apparatus thereof |
| 07/05/2006 | EP1305823A4 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer |
| 07/05/2006 | CN1799150A Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| 07/05/2006 | CN1798881A Method for producing group iii nitride single crystal and apparatus used therefor |
| 07/05/2006 | CN1798880A Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
| 07/05/2006 | CN1796621A Rapid thermal annealing for silicon wafers and silicon wafers fabricated thereby |
| 07/05/2006 | CN1796620A Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers |
| 07/05/2006 | CN1796619A Method for lowering dislocation at tail of monocrystal of gallium phosphide |
| 07/05/2006 | CN1796617A Crystal of deuterated dideutero-ammouium phosphoric acid and development method |
| 07/05/2006 | CN1263206C 氮化物半导体激光元件及其制造方法 The nitride semiconductor laser device and manufacturing method |
| 07/05/2006 | CN1263063C Field emission nano material capable of being used in plane display |
| 07/05/2006 | CN1262692C Silicon nano-wire and its preparation method |
| 07/05/2006 | CN1262498C SiO2 formed body with local or full vitrification, its producing method and use |
| 07/04/2006 | US7071149 Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 07/04/2006 | US7071087 Technique to grow high quality ZnSe epitaxy layer on Si substrate |
| 07/04/2006 | US7070651 Process for growing a carbon film |
| 07/04/2006 | US7070650 Diamond film and method for producing the same |
| 07/04/2006 | US7070649 Process for producing a silicon single crystal which is doped with highly volatile foreign substances |
| 06/29/2006 | WO2006068130A1 Fluorescent material and method for preparation thereof, radiation detector using fluorescent material, and x-ray ct device |
| 06/29/2006 | WO2006068062A1 Metal fluoride single crystal pulling apparatus and process for producing metal fluoride single crystal with the apparatus |
| 06/29/2006 | WO2006067308A1 Method for growing optionally coated beta-sic or alpha-si3n4 nanowires |
| 06/29/2006 | WO2006066816A1 Optical element |
| 06/29/2006 | WO2006066341A1 Preparation of suspensions |
| 06/29/2006 | US20060141271 Cutting tool insert comprising a cemented carbide or cubic boron nitride(CBN) substrate, having caotings comprising refractory layers composed of crystal structured aluminum oxide particles; improved wear resistance and toughness |
| 06/29/2006 | US20060138446 Algainn based optical device and fabrication method thereof |
| 06/29/2006 | US20060137603 Methods and apparatus for rapid crystallization of biomolecules |
| 06/29/2006 | US20060137600 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 06/29/2006 | CA2594132A1 Preparation of suspensions |
| 06/28/2006 | EP1673306A1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures |
| 06/28/2006 | EP0972096B1 Process for preparing polysilicon using exothermic reaction heat |
| 06/28/2006 | CN1795542A Method for producing single crystal ingot from which semiconductor wafer is sliced |
| 06/28/2006 | CN1795141A Method for preparation of metal nano-rod and use thereof |
| 06/28/2006 | CN1794362A Laminated material used for p-type transparent conductor body and its preparation method |
| 06/28/2006 | CN1793440A Tech. for high temp. treating potassium dideuteride phosphate crystal growing solution |
| 06/28/2006 | CN1793439A Process for growing lanthanum chloride crystal by falling method of antivacuum crucible |
| 06/28/2006 | CN1261624C Gypsum whisker, its preparation method and application |
| 06/28/2006 | CN1261623C Barium fluoride (BaF2) crystal with scintillation slow component inhibition filter piece |
| 06/28/2006 | CN1261622C Method and apparatus for growing silicon carbide single crystal by physical vapor transportation |
| 06/27/2006 | US7067955 Method for making potassium niobate thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit and electronic apparatus |
| 06/27/2006 | US7067816 Scintillator crystals, method for making same, user thereof |
| 06/27/2006 | US7067815 Scintillator crystal, method for making same use thereof |
| 06/27/2006 | US7067401 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
| 06/27/2006 | US7067007 Process and device for growing single crystals |
| 06/22/2006 | WO2006064882A1 Process for producing boric acid compound crystal and boric acid compound crystal produced by said process |
| 06/22/2006 | WO2006064797A1 Semiconductor single crystal producing device and producing method |
| 06/22/2006 | WO2006064610A1 Process for producing single crystal and process for producing annealed wafer |
| 06/22/2006 | US20060131553 Silicon semiconductor substrate and its manufacturing method |
| 06/22/2006 | US20060130745 Domain epitaxy for thin film growth |
| 06/22/2006 | US20060130740 Process for producing single crystal and single crystal |
| 06/22/2006 | US20060130738 Method for measuring point defect distribution of silicon single crystal ingot |
| 06/22/2006 | US20060130737 Method for manufacturing silicon single crystal |
| 06/22/2006 | DE102005060391A1 Large single crystal production by the floating zone method uses insulating components or layers to suppress electrical charges between the heating coil and the polycrystalline and grown blocks and the melt zone |
| 06/21/2006 | EP1672102A1 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer |
| 06/21/2006 | EP1671726A1 Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry |
| 06/21/2006 | EP1337482B1 Apparatus for silica crucible manufacture |
| 06/21/2006 | CN2789282Y Semiconductor products |
| 06/21/2006 | CN1791966A Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| 06/21/2006 | CN1791706A Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 06/21/2006 | CN1791705A Silicon epitaxial wafer, and silicon epitaxial wafer producing method |
| 06/21/2006 | CN1790554A P type transparent conductor material and preparing method |
| 06/21/2006 | CN1789501A Method for preparing diluted magnetic semiconductor Ga1-xMnxSb monocrystal |
| 06/21/2006 | CN1260862C Self-frequency-doubled blue-violet coloured laser source |
| 06/21/2006 | CN1260410C Nickel ammonium sulfate hexahydrate crystal for ultraviolet filter |
| 06/21/2006 | CN1260409C Method for obtaining bulk monocrystalline gallium nitride |
| 06/21/2006 | CN1260408C Self excited laser crystal Sc-Sr-Nd borate and its preparation |
| 06/21/2006 | CN1260407C Growth process for DADP photoelectric crystal |
| 06/21/2006 | CN1260406C Nickel iron sulphate dodecahydrate crystal used for ultraviolet and blue-green light-flux belt filter |
| 06/21/2006 | CN1260405C Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
| 06/21/2006 | CN1260404C Method for crystallizing amorphous silicon using nanoparticles |
| 06/20/2006 | US7063986 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device |
| 06/20/2006 | US7063938 filling a monomer solution into interstices of colloidal crystals for photopolymerization inside them; masking; not only more simplified two-dimensional patterns but also complicated two- or three-dimensional patterns can be obtained |
| 06/20/2006 | US7063742 N-type semiconductor diamond and its fabrication method |
| 06/20/2006 | US7063741 High pressure high temperature growth of crystalline group III metal nitrides |
| 06/20/2006 | US7063740 Process for strengthen grain boundaries of an article made from a Ni based superalloy |
| 06/16/2006 | CA2514007A1 Reduction of non-specific adsorption of biological agents on surfaces |
| 06/15/2006 | WO2006062955A1 Process for producing high quality large size silicon carbide crystals |
| 06/15/2006 | WO2005041253A3 Methods for forming superconductor articles and xrd methods for characterizing same |
| 06/15/2006 | US20060125120 Method of fabricating polycrystalline silicon |
| 06/15/2006 | US20060125057 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
| 06/15/2006 | US20060124349 Diamond-coated silicon and electrode |
| 06/15/2006 | US20060124052 Heat shielding member of silicon single crystal pulling system |
| 06/15/2006 | US20060124048 Topological crystal of transition metal chalcogenide and method of forming the same |
| 06/14/2006 | EP1670044A1 Production method for silicon epitaxial wafer, and silicon epitaxial wafer |
| 06/14/2006 | EP1669478A2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
| 06/14/2006 | EP1668668A2 Deposition of silicon-containing films from hexachlorodisilane |
| 06/14/2006 | EP1668356A1 Method for controlling the treatment of a crystal by means of a liquid |
| 06/14/2006 | DE19983159B4 Verfahren zur Herstellung eines Funktionselementes zur Verwendung in einer elektrischen, elektronischen oder optischen Vorrichtung Process for the preparation of a functional element for use in an electric, electronic or optical device |
| 06/14/2006 | DE19922784B4 Verfahren zur Herstellung magnetischer Granat-Einkristallfilme mit niedrigem Bleigehalt und magnetostatische Wellenvorrichtung A process for the production of magnetic garnet single crystal films with low-lead content and magnetostatic wave device |
| 06/14/2006 | DE112004001549T5 Einkristalliner magnetischer Granat und YIG-Bauelement Single-crystal magnetic garnet YIG and component |
| 06/14/2006 | CN1788113A Apparatus for growing crystal by repeating adding material and method thereof |
| 06/14/2006 | CN1787965A Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
| 06/14/2006 | CN1786297A Flux growing method of R2CaB10O19 monocrystal |
| 06/14/2006 | CN1786296A Rutile type structure TiO2 single dispersed nano-monocrystal and its synthesis method |