Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
04/2006
04/19/2006CN1761033A Mask, method of making the same, and method of making thin film transistor using the same
04/19/2006CN1252796C Method for making amorphous silicon crystalize using mask
04/19/2006CN1252324C Process for preparing column shape nanometer barium fluoride crystal
04/19/2006CN1252323C Process for growing calcium borate mono crystal by melt drawing
04/19/2006CN1252309C Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property
04/18/2006US7030000 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
04/18/2006US7029977 Fabrication method of semiconductor wafer
04/18/2006US7029644 Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell
04/18/2006US7029602 Inorganic oxide and phosphor
04/18/2006US7029528 Method for flattening surface of oxide crystal to ultra high degree
04/13/2006WO2006038467A1 Hexagonal wurtzite type single crystal, process for producing the same, and hexagonal wurtzite type single crystal substrate
04/13/2006WO2006037844A2 Cvd doped structures
04/13/2006WO2006037310A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals
04/13/2006US20060079090 Method for depositing nanolaminate thin films on sensitive surfaces
04/13/2006US20060079073 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby
04/13/2006US20060078492 Perovskite titanium-containing composite oxide particle, production process and uses thereof
04/13/2006US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
04/13/2006US20060075957 Annealed wafer and anneald wafer manufacturing method
04/13/2006DE102004049040A1 Verfahren zur Herstellung von Festelektrolytkondensatoren A process for producing solid electrolytic capacitors
04/13/2006DE102004048454A1 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal
04/12/2006EP1646078A1 Epitaxial growth process
04/12/2006EP1646077A1 Nitride semiconductor element and method for manufacturing thereof
04/12/2006EP1645664A1 The technique of production of fancy red diamonds
04/12/2006EP1645656A1 Organometallic compounds suitable for use in vapor deposition processes
04/12/2006CN1251404C Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
04/11/2006US7026179 Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate
04/11/2006US7026169 Method of forming PZT ferroelectric film
04/11/2006US7025909 Method for producing sphere-based crystals
04/11/2006US7025827 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
04/11/2006US7025826 Depositing amorphous material on substrate; ion beam bombardement with oxygen; high temperature superconductors
04/11/2006CA2229384C Silicon feed system
04/06/2006US20060073978 Method and apparatus for making continuous films of a single crystal material
04/06/2006US20060071234 Nitride semiconductor substrate and method of producing same
04/06/2006US20060070652 Drop tube type granular crystal producing device
04/06/2006DE19963283B4 Verfahren zur Herstellung eines GaN-Verbindungshalbleiters A method of making a GaN compound semiconductor
04/05/2006EP1643544A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
04/05/2006EP1643017A1 Crucible and method of growing single crystal by using crucible
04/05/2006EP1642865A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof
04/05/2006CN1249780C Method for growing GaN crystal chip and GaN crystal chip
04/05/2006CN1249276C Method for preparing stable nanometer cuprous oxide whiskers with chemical precipitation method
04/05/2006CN1249275C Preparation method of yttrium aluminium garnet nano-powder
04/05/2006CN1249274C Preparation of flash aluminate crystal doped with trivalent cerium ion
04/05/2006CN1249273C Growth method of titanium doped saphire laser crystal
04/05/2006CN1249271C Growth method of gallium arsenide monocrystal
04/04/2006US7022593 SiGe rectification process
04/04/2006US7022545 Production method of SiC monitor wafer
04/04/2006US7022403 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating
04/04/2006US7022182 Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof
04/04/2006US7022181 Liquid phase growth process, liquid phase growth system and substrate member production method
04/04/2006US7022180 Method and apparatus for growing multiple crystalline ribbons from a single crucible
04/04/2006CA2141131C Conversion of doped polycrystalline material to single crystal material
03/2006
03/30/2006WO2006033732A1 Synthesis of highly luminescent colloidal particles
03/30/2006WO2006033534A1 Single crystal wire and manufacturing method of the same
03/30/2006WO2006032756A1 Indium nitride layer production
03/30/2006US20060068597 Method for texturing surfaces of silicon wafers
03/30/2006US20060065184 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer
03/30/2006DE10319300B4 Verfahren zur Herstellung eines Formkörpers aus Kieselglas A process for producing a shaped article made of silica glass
03/30/2006DE10260320B4 Verglaster SiO2-Formkörper, Verfahren zu seiner Herstellung und Vorrichtung Glazed SiO2-shaped body, method for its production and device
03/30/2006DE10058320B4 Herstellungsverfahren für Silicium-Wafer Manufacturing method for silicon wafers
03/30/2006DE10043587B4 Verfahren zur Herstellung eines Substrats, nach diesem Verfahren hergestelltes Substrat A method for producing a substrate, prepared by this process substrate
03/29/2006EP1641051A2 Growth of III-nitride light-emitting devices on textured substrates
03/29/2006EP1640484A1 Process for producing single crystal and single crystal
03/29/2006EP1640483A1 Process for producing single crystal and single crystal
03/29/2006EP1640482A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method
03/29/2006EP1640431A1 Transition metal doped spinel type mgal sb 2 /sb o sb 4 /sb phosphor, laser apparatus including the same and process for producing the phosphor
03/29/2006EP1639509A2 Protein crystal comprising the processivity clamp factor of dna polymerase and a ligand, and its uses
03/29/2006EP1639158A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
03/29/2006EP1639157A1 Method of synthesising a crystalline material and material thus obtained
03/29/2006EP1348048B1 Process for preparing single crystal silicon having improved gate oxide integrity
03/29/2006CN1754266A Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible
03/29/2006CN1754014A Process for producing lithium tantalate crystal
03/29/2006CN1754013A B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
03/29/2006CN1754012A Annealing method for halide crystal
03/29/2006CN1247833C Silicon epitaxial wafer and its manufacturing method
03/29/2006CN1247832C Automatic pressure control device for SiC single-crystal growth
03/29/2006CN1247831C Silicon carbide crystal growth apparatus
03/29/2006CN1247829C Rare-earth supermagnetostrictive material one step preparation and apparatus and products thereof
03/28/2006US7019449 Chemical monolayer field emitter device
03/28/2006US7018915 Group III nitride compound semiconductor device and method for forming an electrode
03/28/2006US7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby
03/28/2006US7018750 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first
03/28/2006US7018728 Single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer having p-type or n-type electrical conductivity or high resistance; light emitting diodes
03/28/2006US7018600 Expanded carbon fiber product and composite using the same
03/28/2006US7018597 High resistivity silicon carbide single crystal
03/28/2006US7018468 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
03/23/2006WO2006030884A1 Thin film producing method
03/23/2006WO2006030741A1 Method for preparing silica porous crystal
03/23/2006WO2006030718A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL
03/23/2006DE10205085B4 Einkristall aus Silicium und Verfahren zu dessen Herstellung Single crystal of silicon and process for its preparation
03/23/2006CA2575803A1 Progesterone receptor structure
03/23/2006CA2520670A1 Nanocrystal coated surfaces
03/22/2006EP1637630A1 Apparatus for screening proptein crystallization conditions
03/22/2006EP1636807A2 Method of producing biaxially textured buffer layers and related articles, devices and systems
03/22/2006EP1636404A1 System for growing silicon carbide crystals
03/22/2006EP1348047B1 Magnetic field furnace and a method of using the same to manufacture dendritic web crystals
03/22/2006EP1242836B1 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME
03/22/2006CN1751379A Buffer structure for modifying a silicon substrate
03/22/2006CN1751141A Method for preparing borate-based crystal and laser oscillation apparatus
03/22/2006CN1750995A A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
03/22/2006CN1749447A Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface