Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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04/19/2006 | CN1761033A Mask, method of making the same, and method of making thin film transistor using the same |
04/19/2006 | CN1252796C Method for making amorphous silicon crystalize using mask |
04/19/2006 | CN1252324C Process for preparing column shape nanometer barium fluoride crystal |
04/19/2006 | CN1252323C Process for growing calcium borate mono crystal by melt drawing |
04/19/2006 | CN1252309C Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property |
04/18/2006 | US7030000 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element |
04/18/2006 | US7029977 Fabrication method of semiconductor wafer |
04/18/2006 | US7029644 Method for producing a polycrystalline silicon, polycrystalline silicon and solar cell |
04/18/2006 | US7029602 Inorganic oxide and phosphor |
04/18/2006 | US7029528 Method for flattening surface of oxide crystal to ultra high degree |
04/13/2006 | WO2006038467A1 Hexagonal wurtzite type single crystal, process for producing the same, and hexagonal wurtzite type single crystal substrate |
04/13/2006 | WO2006037844A2 Cvd doped structures |
04/13/2006 | WO2006037310A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals |
04/13/2006 | US20060079090 Method for depositing nanolaminate thin films on sensitive surfaces |
04/13/2006 | US20060079073 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
04/13/2006 | US20060078492 Perovskite titanium-containing composite oxide particle, production process and uses thereof |
04/13/2006 | US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium |
04/13/2006 | US20060075957 Annealed wafer and anneald wafer manufacturing method |
04/13/2006 | DE102004049040A1 Verfahren zur Herstellung von Festelektrolytkondensatoren A process for producing solid electrolytic capacitors |
04/13/2006 | DE102004048454A1 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal |
04/12/2006 | EP1646078A1 Epitaxial growth process |
04/12/2006 | EP1646077A1 Nitride semiconductor element and method for manufacturing thereof |
04/12/2006 | EP1645664A1 The technique of production of fancy red diamonds |
04/12/2006 | EP1645656A1 Organometallic compounds suitable for use in vapor deposition processes |
04/12/2006 | CN1251404C Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device |
04/11/2006 | US7026179 Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate |
04/11/2006 | US7026169 Method of forming PZT ferroelectric film |
04/11/2006 | US7025909 Method for producing sphere-based crystals |
04/11/2006 | US7025827 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer |
04/11/2006 | US7025826 Depositing amorphous material on substrate; ion beam bombardement with oxygen; high temperature superconductors |
04/11/2006 | CA2229384C Silicon feed system |
04/06/2006 | US20060073978 Method and apparatus for making continuous films of a single crystal material |
04/06/2006 | US20060071234 Nitride semiconductor substrate and method of producing same |
04/06/2006 | US20060070652 Drop tube type granular crystal producing device |
04/06/2006 | DE19963283B4 Verfahren zur Herstellung eines GaN-Verbindungshalbleiters A method of making a GaN compound semiconductor |
04/05/2006 | EP1643544A1 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
04/05/2006 | EP1643017A1 Crucible and method of growing single crystal by using crucible |
04/05/2006 | EP1642865A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
04/05/2006 | CN1249780C Method for growing GaN crystal chip and GaN crystal chip |
04/05/2006 | CN1249276C Method for preparing stable nanometer cuprous oxide whiskers with chemical precipitation method |
04/05/2006 | CN1249275C Preparation method of yttrium aluminium garnet nano-powder |
04/05/2006 | CN1249274C Preparation of flash aluminate crystal doped with trivalent cerium ion |
04/05/2006 | CN1249273C Growth method of titanium doped saphire laser crystal |
04/05/2006 | CN1249271C Growth method of gallium arsenide monocrystal |
04/04/2006 | US7022593 SiGe rectification process |
04/04/2006 | US7022545 Production method of SiC monitor wafer |
04/04/2006 | US7022403 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating |
04/04/2006 | US7022182 Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof |
04/04/2006 | US7022181 Liquid phase growth process, liquid phase growth system and substrate member production method |
04/04/2006 | US7022180 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
04/04/2006 | CA2141131C Conversion of doped polycrystalline material to single crystal material |
03/30/2006 | WO2006033732A1 Synthesis of highly luminescent colloidal particles |
03/30/2006 | WO2006033534A1 Single crystal wire and manufacturing method of the same |
03/30/2006 | WO2006032756A1 Indium nitride layer production |
03/30/2006 | US20060068597 Method for texturing surfaces of silicon wafers |
03/30/2006 | US20060065184 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer |
03/30/2006 | DE10319300B4 Verfahren zur Herstellung eines Formkörpers aus Kieselglas A process for producing a shaped article made of silica glass |
03/30/2006 | DE10260320B4 Verglaster SiO2-Formkörper, Verfahren zu seiner Herstellung und Vorrichtung Glazed SiO2-shaped body, method for its production and device |
03/30/2006 | DE10058320B4 Herstellungsverfahren für Silicium-Wafer Manufacturing method for silicon wafers |
03/30/2006 | DE10043587B4 Verfahren zur Herstellung eines Substrats, nach diesem Verfahren hergestelltes Substrat A method for producing a substrate, prepared by this process substrate |
03/29/2006 | EP1641051A2 Growth of III-nitride light-emitting devices on textured substrates |
03/29/2006 | EP1640484A1 Process for producing single crystal and single crystal |
03/29/2006 | EP1640483A1 Process for producing single crystal and single crystal |
03/29/2006 | EP1640482A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
03/29/2006 | EP1640431A1 Transition metal doped spinel type mgal sb 2 /sb o sb 4 /sb phosphor, laser apparatus including the same and process for producing the phosphor |
03/29/2006 | EP1639509A2 Protein crystal comprising the processivity clamp factor of dna polymerase and a ligand, and its uses |
03/29/2006 | EP1639158A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
03/29/2006 | EP1639157A1 Method of synthesising a crystalline material and material thus obtained |
03/29/2006 | EP1348048B1 Process for preparing single crystal silicon having improved gate oxide integrity |
03/29/2006 | CN1754266A Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible |
03/29/2006 | CN1754014A Process for producing lithium tantalate crystal |
03/29/2006 | CN1754013A B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
03/29/2006 | CN1754012A Annealing method for halide crystal |
03/29/2006 | CN1247833C Silicon epitaxial wafer and its manufacturing method |
03/29/2006 | CN1247832C Automatic pressure control device for SiC single-crystal growth |
03/29/2006 | CN1247831C Silicon carbide crystal growth apparatus |
03/29/2006 | CN1247829C Rare-earth supermagnetostrictive material one step preparation and apparatus and products thereof |
03/28/2006 | US7019449 Chemical monolayer field emitter device |
03/28/2006 | US7018915 Group III nitride compound semiconductor device and method for forming an electrode |
03/28/2006 | US7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
03/28/2006 | US7018750 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first |
03/28/2006 | US7018728 Single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer having p-type or n-type electrical conductivity or high resistance; light emitting diodes |
03/28/2006 | US7018600 Expanded carbon fiber product and composite using the same |
03/28/2006 | US7018597 High resistivity silicon carbide single crystal |
03/28/2006 | US7018468 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing |
03/23/2006 | WO2006030884A1 Thin film producing method |
03/23/2006 | WO2006030741A1 Method for preparing silica porous crystal |
03/23/2006 | WO2006030718A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL |
03/23/2006 | DE10205085B4 Einkristall aus Silicium und Verfahren zu dessen Herstellung Single crystal of silicon and process for its preparation |
03/23/2006 | CA2575803A1 Progesterone receptor structure |
03/23/2006 | CA2520670A1 Nanocrystal coated surfaces |
03/22/2006 | EP1637630A1 Apparatus for screening proptein crystallization conditions |
03/22/2006 | EP1636807A2 Method of producing biaxially textured buffer layers and related articles, devices and systems |
03/22/2006 | EP1636404A1 System for growing silicon carbide crystals |
03/22/2006 | EP1348047B1 Magnetic field furnace and a method of using the same to manufacture dendritic web crystals |
03/22/2006 | EP1242836B1 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME |
03/22/2006 | CN1751379A Buffer structure for modifying a silicon substrate |
03/22/2006 | CN1751141A Method for preparing borate-based crystal and laser oscillation apparatus |
03/22/2006 | CN1750995A A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof |
03/22/2006 | CN1749447A Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface |