Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2006
05/17/2006CN1256470C Growing process of thulium doped yttrium aluminate laser crystal
05/16/2006US7045957 Polycrystal diamond thin film and photocathode and electron tube using the same
05/16/2006US7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
05/16/2006US7045223 Single crystals; reducing stresses; melt processability
05/16/2006US7045009 Method and apparatus for manufacturing single crystal
05/16/2006CA2354941C Polycrystalline diamond materials formed from coarse-sized diamond grains
05/11/2006WO2006049901A2 Method of purifying alkaline-earth and alkali-earth halides for crystal growth
05/11/2006WO2006049284A1 Pr-CONTAINING SINGLE CRYSTAL FOR SCINTILLATOR, PROCESS FOR PRODUCING THE SAME, RADIATION DETECTOR AND INSPECTION APPARATUS
05/11/2006WO2005095263A3 Methods of forming alpha and beta tantalum films with controlled and new microstructures
05/11/2006US20060099781 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
05/11/2006US20060097353 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped n-type gallium nitride freestanding single crystal substrate
05/11/2006CA2549283A1 Single-crystal diamond
05/10/2006EP1655789A1 Domain controlled piezoelectric single crystal and fabrication method therefor
05/10/2006EP1655766A1 Substrate for nitride semiconductor growth
05/10/2006EP1655392A1 Alumina layer with enhanced texture
05/10/2006EP1655387A1 Enhanced alumina layer with texture
05/10/2006EP1654405A1 Device and method for treating a crystal by applying microdrops thereto
05/10/2006CN1771356A CVD diamond in wear applications
05/10/2006CN1771195A Silicon manufacturing apparatus
05/10/2006CN1769548A Method for preparing one-dimension oriented nanometer titanium dioxide tubular crystal thin film
05/10/2006CN1769547A Monocrystalline Si3N4 nanometer belt and micro belt preparation method
05/10/2006CN1769546A Method for developping directionally aligning carbon nanometer tube array on silicon substrate
05/10/2006CN1769545A Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate
05/10/2006CN1769544A Method for developping monocrystalline iron nanometer thread on silicon substrate
05/10/2006CN1769539A Sb2Te3 monocrystalline nanometer line ordered array and its preparation method
05/10/2006CN1769179A Monocrystal type aluminum hydroxide production method
05/10/2006CN1255583C Method for producing gallium nitride
05/10/2006CN1255580C Preparation method for C-axis preferred orientation single crystal ZnO hexagonus microtubule
05/10/2006CN1255359C Production of oriented material or composite material through centrifugal sintering
05/09/2006US7042141 An epitaxial crystal thin film on a substrate, having formula Pb1-xLnxZryTi1-yO3, ( Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin)
05/09/2006US7042006 Micro-electronic junctions devices containing same
05/09/2006CA2132185C Solid state thermal conversion of polycrystalline alumina to sapphire
05/04/2006WO2006045920A1 Method for growing thin layers of low curvature silicon carbide on a silicon substrate
05/04/2006WO2006045885A1 Method of depositing lead containing oxides films
05/04/2006WO2006045600A1 Photovoltaic cell comprising a photovoltaic active semiconductor material
05/04/2006US20060090694 Method for atomic layer deposition (ALD) of silicon oxide film
05/04/2006US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film
05/04/2006DE19631407B4 Vorrichtung zur plasmachemischen Abscheidung von polykristallinem Diamant Device for the plasma-chemical deposition of polycrystalline diamond
05/04/2006CA2585166A1 Photovoltaic cell comprising a photovoltaically active semiconductor material
05/03/2006EP1653502A1 Semiconductor layer
05/03/2006EP1652973A1 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
05/03/2006CN1768259A Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal
05/03/2006CN1768167A Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
05/03/2006CN1768166A Magnetic garnet single crystal film formation substrate, optical element and production method of the same
05/03/2006CN1768165A Zinc oxide single crystal
05/03/2006CN1766178A Porous magnesia whisker preparation method
05/03/2006CN1254868C Group III nitride semiconductor device and its manufacturing method
05/03/2006CN1254855C Quick annealing and silicon wafer produced by same
05/03/2006CN1254569C Growth method of RE3+: KGd (WO4)2 laser crystal
05/03/2006CN1254568C Growth of LiB3O5 nonlinear optical crystal
05/03/2006CN1254566C Fused salt pulling method for growing LBO crystal
05/03/2006CN1254564C Growth of laser crystal Yb3+; Nd3+: REA3 (BO3)4
05/03/2006CN1254305C High temp/high pressure colour change of diamond
05/02/2006US7038300 Apparatus with improved layers of group III-nitride semiconductor
05/02/2006US7038299 Selective synthesis of semiconducting carbon nanotubes
04/2006
04/27/2006US20060088713 Surface modification of nanocrystals using multidentate polymer ligands
04/27/2006DE19741307B4 Verfahren zur Kristallzüchtung Method for growing crystals
04/26/2006EP1650788A1 Vapor deposition apparatus and vapor deposition method
04/26/2006EP1650332A1 Method for producing single crystal and single crystal
04/26/2006EP1650330A1 Method of producing silicon wafer and silicon wafer
04/26/2006EP1650164A1 ELECTROCONDUCTIVE 12CaO.7Al sb 2 /sb O sb 3 /sb AND COMPOUND OF SAME TYPE, AND METHOD FOR PREPARATION THEREOF
04/26/2006EP1649500A2 Method and structure of strain control of sige based photodetectors and modulators
04/26/2006EP1649495A2 Epitaxial growth of relaxed silicon germanium layers
04/26/2006EP1649039A2 Crystallization reagent matrices and related methods and kits
04/26/2006EP1648636A1 Method for producing magnetically active shape memory metal alloy
04/26/2006CN1763271A Anion and cation co-doped PbWO4 crystal and its growth method
04/26/2006CN1763270A Process for preparing two-dimensional nano zinc oxide single chip
04/26/2006CN1763269A Laser crystal with shortwave stimulated emission
04/26/2006CN1763268A Growth control method for A-plane and M-plane GaN film material
04/26/2006CN1763267A Preparation method for large-particle monocrystal diamond by DC plasma sedimentation
04/26/2006CN1763266A Process for preparing gas phase doped float-zone silicon monocrystal for solar cell
04/26/2006CN1763265A Process for preparing magnetic Czochralski silicon monocrystal
04/26/2006CN1763264A Flux method for growth of gallium phosphate crystal
04/26/2006CN1763263A Oriented ZnO nanorod or nanowire film and preparation process thereof
04/26/2006CN1763259A Method for preparing diameter different monocrystal bismuth nanowire microarray by using uniform hole diameter alumina template
04/26/2006CN1763049A Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
04/26/2006CN1762822A Method and device for in situ preparing zinc oxide nanometer crystal using coaxial oxygen transporting laser
04/26/2006CN1762803A Sol-gel method and method for manufacturing optical crystal fiber using the same
04/26/2006CN1762589A Method for preparing supported catalyst with single wall or double wall carbon nano tube
04/26/2006CN1253612C Process for preparing zinc oxide crystal whisker
04/26/2006CN1253611C Process for preparing monocrystal membrane of Gallium nitride
04/26/2006CN1253610C Low defect density self-interstitial atom controlled silicon
04/25/2006US7035306 Method of assaying fluorite sample and method of producing fluorite crystal
04/25/2006US7033858 Method for making Group III nitride devices and devices produced thereby
04/25/2006US7033563 Method for reducing oxygen component and carbon component in fluoride
04/25/2006US7033439 Apparatus for fabricating a III-V nitride film and a method for fabricating the same
04/25/2006US7033433 Crystal growth methods
04/20/2006WO2006041660A2 100 mm silicon carbide wafer with low micropipe density
04/20/2006WO2006041067A1 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
04/20/2006WO2006022302A3 Process for producing aluminum nitride crystal and aluminum nitride crystal obtained thereby
04/20/2006US20060084563 Non-crazing, for use in jewelry and ornaments; made by adding tetraethylorthosilicate to homogenous mixture of absolute ethanol (99.9%), concentrated nitric acid, distilled water, and an inorganic salt, gelating the clear sol, drying and sintering; similar physical and chemical properties as natural opal
04/20/2006US20060084246 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
04/20/2006US20060081173 Device and method for forming macromolecule crystal
04/20/2006US20060081172 Method for preparing diamond from graphite by inner shell electron excitation
04/20/2006DE102005048680A1 Trimethylgallium, Verfahren zur Herstellung desselben und aus dem Trimethylgallium gezüchteter Galliumnitriddünnfilm Trimethylgallium, method for producing the same and bred from the trimethylgallium Galliumnitriddünnfilm
04/20/2006DE102004048453A1 Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze A method for increasing the conversion of group III metal to group III nitride in a group-III-containing molten metal
04/20/2006DE102004021113B4 SOI-Scheibe und Verfahren zu ihrer Herstellung SOI wafer and processes for their preparation
04/19/2006EP1647843A1 Colloidal crystal and method and device for manufacturing colloidal crystal gel
04/19/2006EP1210171B1 High pressure/high temperature production of colored diamonds
04/19/2006CN1761776A Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacita