| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/22/2006 | CN1749446A Method for nano zinc oxide crystal surface controllable growth |
| 03/22/2006 | CN1748862A Process for preparing carbon nano tube and carbon onion by Ni/Al catalyst chemical gas phase deposition |
| 03/22/2006 | CN1246508C Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film |
| 03/22/2006 | CN1246505C Method for single-crystal growth |
| 03/21/2006 | US7015511 Gallium nitride-based light emitting device and method for manufacturing the same |
| 03/21/2006 | US7015041 Automated method for setting up multiple crystallization experiments in submicroliter volumes |
| 03/21/2006 | US7014923 Method of growing a MCrAlY-coating and an article coated with the MCrAlY-coating |
| 03/21/2006 | US7014711 Liquid-phase growth apparatus and method |
| 03/21/2006 | US7014706 Crystal forming apparatus and method for using same |
| 03/21/2006 | US7014705 Microfluidic device with diffusion between adjacent lumens |
| 03/21/2006 | US7014703 Method for annealing group IIA metal fluoride crystals |
| 03/16/2006 | WO2006029230A1 Manganese oxide nanowires, films, and membranes and methods of making |
| 03/16/2006 | WO2006028299A1 Antiferromagnetic half metallic semiconductor and method for forming the same |
| 03/16/2006 | WO2006028123A1 Process for producing polymer crystal and polymer crystal growing apparatus |
| 03/16/2006 | WO2006026994A1 Crystal structure of house dust mite allergen der p 1 |
| 03/16/2006 | WO2005099934A3 Method and arrangement for crystal growth from fused metals or fused solutions |
| 03/16/2006 | US20060057403 Use of thin SOI to inhibit relaxation of SiGe layers |
| 03/16/2006 | US20060057360 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 03/16/2006 | US20060054864 Method and structure for non-linear optics |
| 03/16/2006 | US20060054078 Liquid-phase growth apparatus and method |
| 03/16/2006 | US20060054077 Pulse sequencing lateral growth method |
| 03/16/2006 | US20060054076 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same |
| 03/16/2006 | DE10303875B4 Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur Structure, in particular semiconductor structure, as well as methods for manufacturing a structure |
| 03/16/2006 | DE102005046726A1 Unpolished semiconductor wafer manufacture, involves cutting off wafer from crystal, rounding off edge of wafer, grounding upper surface of one side of wafer, treating wafer with corrosive medium and cleaning wafer |
| 03/16/2006 | DE102004038573A1 Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer |
| 03/16/2006 | CA2579170A1 Crystal structure of house dust mite allergen der p 1 |
| 03/15/2006 | EP1634981A1 Indium phosphide substrate, indium phosphide single crystal and process for producing them |
| 03/15/2006 | EP1634980A1 Method for producing group iii nitride single crystal and apparatus used therefor |
| 03/15/2006 | EP1634321A2 Phase controlled sublimation |
| 03/15/2006 | CN1748290A Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| 03/15/2006 | CN1748287A Silicon semiconductor substrate and its manufacturing method |
| 03/14/2006 | US7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 03/14/2006 | US7011709 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display |
| 03/14/2006 | US7011704 Method and device for the production of a single crystal |
| 03/09/2006 | WO2006025420A1 Method for preparing silicon carbide single crystal |
| 03/09/2006 | US20060051942 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby |
| 03/09/2006 | US20060051600 Precursor solutions and methods of using same |
| 03/09/2006 | US20060051554 To be used for growth of a nitride semiconductor on a sapphire substrate |
| 03/09/2006 | US20060051041 Optical waveguide material and optical waveguide |
| 03/09/2006 | US20060048699 Apparatus for producing single crystal and quasi-single crystal, and associated method |
| 03/09/2006 | DE102005039116A1 Verfahren zur Erzeugung eines Siliziumwafers A method for producing a silicon wafer |
| 03/08/2006 | EP1632593A1 Apparatus for producing fluoride crystal |
| 03/08/2006 | EP1632591A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method |
| 03/08/2006 | EP1632590A2 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 03/08/2006 | EP1535309A4 Radiation detector |
| 03/08/2006 | EP1130137B1 Material for raising single crystal sic and method of preparing single crystal sic |
| 03/08/2006 | CN1744942A Improved pressure vessel |
| 03/08/2006 | CN1244724C Magnetic garnet monocrystal film and its preparation, and Faraday rotor using said monocrystal film |
| 03/07/2006 | US7008906 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 03/07/2006 | US7008864 Method of depositing high-quality SiGe on SiGe substrates |
| 03/02/2006 | WO2006022282A1 Silicon carbide single crystal wafer and method for manufacturing the same |
| 03/02/2006 | US20060046511 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method |
| 03/02/2006 | US20060046325 Group III nitride semiconductor substrate and its manufacturing method |
| 03/02/2006 | US20060042541 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 03/02/2006 | DE4416543B4 Zonenschmelzvorrichtung mit einem verbesserten Suszeptor und Verfahren zum tiegelfreien Zonenschmelzen Zone melting apparatus with an improved susceptor and method of floating zone melting |
| 03/02/2006 | DE102004039197A1 Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium und derartige Halbleiterscheiben A process for the production of doped semiconductor wafers of silicon and semiconductor wafers such |
| 03/01/2006 | EP1630878A2 GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate |
| 03/01/2006 | EP1630263A1 Apparatus and method for forming biopolymer crystals |
| 03/01/2006 | EP1630262A1 Process for rebuilding a single crystal or directionally solidified metallic article |
| 03/01/2006 | EP1114885B1 CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF |
| 03/01/2006 | EP1097107B1 A method of altering the colour of a material |
| 03/01/2006 | EP0852097B2 Electronic program guide schedule localization system and method |
| 03/01/2006 | CN2761627Y Growth device of KDP kind crystal |
| 03/01/2006 | CN1742121A Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacita |
| 03/01/2006 | CN1741258A Process for growing high crystalline quality zinc oxide thin film on silicon substrate under low temperature |
| 03/01/2006 | CN1740408A Production process of serial potassium titanate whisker products |
| 03/01/2006 | CN1740407A Yb-dopped strontium-lanthanum aluminate-tantalate laser crystal and its prepn |
| 03/01/2006 | CN1740406A Nanometer silicon wire structure and its growth process |
| 03/01/2006 | CN1243855C Single crystal diamond prepared by CVD |
| 03/01/2006 | CN1243854C Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 03/01/2006 | CN1243606C High temp/high pressure colour change of diamond |
| 02/23/2006 | WO2006019692A1 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 02/23/2006 | WO2006019098A1 Metal nitrides and process for production thereof |
| 02/23/2006 | WO2006018101A1 Method for production of reactors for the decomposition of gases |
| 02/23/2006 | WO2006018013A1 Method for application of a zinc sulphide buffer layer to a semiconductor substrate by means of chemical bath deposition in particular on the absorber layer of a chalcopyrite thin-film solar cell |
| 02/23/2006 | WO2005114281A3 Method for fabricating three-dimensional photonic crystals using a single planar etch mask and deep reactive-ion/plasma etching |
| 02/23/2006 | US20060038194 Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible |
| 02/23/2006 | US20060037529 Single crystal and quasi-single crystal, composition, apparatus, and associated method |
| 02/23/2006 | DE102005038873A1 Vielkammer-MOCVD-Aufwachsvorrichtung für hohe Geschwindigkeit/ hohen Durchsatz Multi-chamber MOCVD growth apparatus for high speed / high throughput |
| 02/23/2006 | DE102004038718A1 Reaktor sowie Verfahren zur Herstellung von Silizium Reactor and to methods for producing silicon |
| 02/22/2006 | EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 02/22/2006 | CN1738931A Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
| 02/22/2006 | CN1737222A Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof |
| 02/22/2006 | CN1737221A Process for preparing lead sulfur family compound semiconductor single crystal |
| 02/22/2006 | CN1737220A Silicon carbide crystal whisker generation furnace and method for producing silicon carbide crystal whisker |
| 02/22/2006 | CN1737219A Ytterbium-doped yttrium luetcium silicate laser crystal and process for preparing the same |
| 02/22/2006 | CN1737218A Neodymium-doped lanthanum strontium aluminate tantalate laser crystal and process for preparing the same |
| 02/22/2006 | CN1737217A Non-linear optics crystal material, process for preparing the same and purposes thereof |
| 02/22/2006 | CN1737216A Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
| 02/22/2006 | CN1737215A Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent |
| 02/22/2006 | CN1243137C Annealing process of Yb: YAG crystal |
| 02/22/2006 | CN1243135C Growing method titanium-doped sapphire and sapphire composite laser crystal |
| 02/21/2006 | US7002230 CdTe-base compound semiconductor single crystal for electro-optic element |
| 02/21/2006 | US7002179 ZnO system semiconductor device |
| 02/21/2006 | US7001813 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
| 02/21/2006 | US7001791 GaN growth on Si using ZnO buffer layer |
| 02/21/2006 | US7001458 Process for growing of optical fluorite single crystals |
| 02/21/2006 | US7001455 Method and apparatus for doping semiconductors |
| 02/21/2006 | US7001438 Method for performing submicroliter crystallization experiments with high experiment to experiment precision |
| 02/21/2006 | US7000408 Superconducting magnet apparatus and maintenance method of refrigerator for the same |