| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/28/2008 | US20080206123 Silicon feedstock for solar cells |
| 08/28/2008 | US20080203915 Material of protective layer, method of preparing the same, protective layer formed of the material, and plasma display panel including the protective layer |
| 08/28/2008 | US20080202650 Heat Treatment Method For Monocrystalline or Directionally Solidified Structural Components |
| 08/28/2008 | US20080202582 Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device |
| 08/28/2008 | US20080202409 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 08/28/2008 | DE102007009839A1 Hydride vapor phase epitaxy method for producing aluminum gallium indium nitride mono-crystal, used in optoelectronics, particularly for ight-emitting diodes, involves utilizing mixture of aluminum, gallium and indium metals |
| 08/28/2008 | DE102007009412A1 Hydride vapor phase epitaxy process for the production of aluminum-gallium-nitrogen monocrystals useful in laser diode, comprises converting mixture of aluminum, gallium and indium metals having hydrogen compounds of halogens to halides |
| 08/28/2008 | DE102007009281A1 Procedure for the production of material deposition for semiconductor material wafer, comprises creating damage in a semiconductor material and subsequently treating the semiconductor material by heat for ten hours |
| 08/28/2008 | CA2679024A1 Group-iii metal nitride and preparation thereof |
| 08/27/2008 | EP1962348A2 Nanowires-based transparent conductors |
| 08/27/2008 | EP1961843A2 Method for producing BaLiF3 single crystal |
| 08/27/2008 | EP1961702A1 METALLIC ELECTROCONDUCTIVE 12Cao·7Al2O3 COMPOUND AND PROCESS FOR PRODUCING THE SAME |
| 08/27/2008 | EP1960571A2 Gan crystal sheet |
| 08/27/2008 | EP1960570A2 Large aluminum nitride crystals with reduced defects and methods of making them |
| 08/27/2008 | EP1960309A1 Method for producing nanostructures on a substrate |
| 08/27/2008 | EP1740735B1 Heat treatment method for monocrystalline or directionally solidified structural components |
| 08/27/2008 | CN201105993Y Polycrystalline silicon hydrogen reducing furnace suitable for low-voltage normal power supply hot start |
| 08/27/2008 | CN201105992Y Inlet nozzle of polycrystalline silicon hydrogen reducing furnace |
| 08/27/2008 | CN201105991Y Polycrystalline silicon hydrogen reducing furnace |
| 08/27/2008 | CN201105990Y Polycrystalline silicon hydrogen reducing furnace |
| 08/27/2008 | CN201105989Y Polycrystalline silicon hydrogen reducing furnace |
| 08/27/2008 | CN201105988Y Polycrystalline silicon hydrogen reducing furnace |
| 08/27/2008 | CN101250753A Process for synthesizing polycrystal lattice laminal compound |
| 08/27/2008 | CN101250752A Group iii nitride semiconductor substrate |
| 08/27/2008 | CN101250751A Method for preparing crystal wisker of potassium hexatitanate |
| 08/27/2008 | CN101250750A Amorphous diamond materials and associated methods for the use and manufacture thereof |
| 08/27/2008 | CN101250749A Gliding quartz boat for growth low-melting point semiconductor material |
| 08/27/2008 | CN101250747A Method for reducing helix dislocation density of ZnO crystal under hydro-thermal method |
| 08/27/2008 | CN101250746A Method for inhibition of ZnO crystal ¿Cc axis direction growth under hydrothermal condition |
| 08/27/2008 | CN101250725A Method for manufacturing large area evenly distributed cuprum octahedron nanometer particle |
| 08/27/2008 | CN101250719A Method for one-step synthesing and assembling cuprum nanometer particle |
| 08/27/2008 | CN100414005C Production method for semiconductor crystal and semiconductor luminous element |
| 08/27/2008 | CN100414004C Device and method for producing single crystals by vapor deposition |
| 08/27/2008 | CN100413939C Scintillator crystals, method for making same, and use thereof |
| 08/26/2008 | US7417255 Methods of forming a high conductivity diamond film and structures formed thereby |
| 08/21/2008 | WO2008099720A1 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal |
| 08/21/2008 | WO2008099422A2 Method and apparatus for producing single crystalline diamonds |
| 08/21/2008 | DE102005045337B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 08/20/2008 | EP1959033A2 Group III nitride semiconductor substrate |
| 08/20/2008 | EP1957689A2 High crystalline quality synthetic diamond |
| 08/20/2008 | EP1655789B1 Domain controlled piezoelectric single crystal and fabrication method therefor |
| 08/20/2008 | EP1567531A4 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 08/20/2008 | EP1456866A4 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| 08/20/2008 | EP1415023B1 Method of obtaining a cdte or cdznte single crystal |
| 08/20/2008 | EP1291456B1 Polycrystalline silicon rod and method for processing the same |
| 08/20/2008 | EP1264011A4 Iii-v nitride substrate boule and method of making and using the same |
| 08/20/2008 | EP1074643B1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 08/20/2008 | CN101248221A Process for producing semiconductor substrate |
| 08/20/2008 | CN101248210A High colour diamond layer |
| 08/20/2008 | CN101245491A Method for growing unsupported gallium nitride nanocrystalline on zinc oxide of nano-stick |
| 08/20/2008 | CN101245490A Flux growth method for CsLiB6O10 crystal |
| 08/20/2008 | CN101245489A Nanocrystalline silicon forming method |
| 08/20/2008 | CN101245488A Method for growing nanocrystalline silicon in critical condition |
| 08/20/2008 | CN100412239C Technique for growing Cd-Zn-Te crystal |
| 08/20/2008 | CN100412238C Equipment and process for preparing monocrystalline GaN film material |
| 08/19/2008 | US7413609 Semiconductor single crystal manufacturing apparatus |
| 08/19/2008 | US7413606 Method for producing crystal of fluoride |
| 08/19/2008 | US7413430 Crystal base plate and pressing device |
| 08/19/2008 | CA2405362C High temperature/high pressure colour change of diamond |
| 08/14/2008 | WO2008096889A1 Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal |
| 08/14/2008 | WO2008096884A1 N-type conductive aluminum nitride semiconductor crystal and method for producing the same |
| 08/14/2008 | WO2008096778A1 Zno thin film |
| 08/14/2008 | WO2008096518A1 Method for measuring distance between lower end surface of heat shielding member and material melt surface, and method for controlling the distance |
| 08/14/2008 | WO2008096314A2 Polycrystalline diamond (pcd) materials |
| 08/14/2008 | US20080193363 Metal Nitrides and Process for Production Thereof |
| 08/14/2008 | DE112006002580T5 Einkristallsiliciumziehgerät, Verfahren zum Verhindern der Kontamination von Siliciumschmelze und Gerät zum Verhindern der Kontamination von Siliciumschmelze Einkristallsiliciumziehgerät, method of preventing contamination of the silicon melt and apparatus for preventing contamination of the silicon melt |
| 08/14/2008 | DE102007005346A1 Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung Semiconductor wafers of silicon and process for their preparation |
| 08/14/2008 | CA2674999A1 Polycrystalline diamond (pcd) materials |
| 08/13/2008 | EP1956119A1 Quartz glass crucible, process for producing the same, and use |
| 08/13/2008 | EP1956112A2 System and method for reducing particles in epitaxial reactors |
| 08/13/2008 | EP1954857A2 Doped aluminum nitride crystals and methods of making them |
| 08/13/2008 | EP1451394B1 Aluminum oxide material for optical data storage |
| 08/13/2008 | CN101243011A Method of producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods |
| 08/13/2008 | CN101241883A Preparation method of a coating of gallium nitride |
| 08/13/2008 | CN101241851A Substrate for growing gallium nitride, method for preparing the substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 08/13/2008 | CN101240451A In-situ corrosion method for reducing HVPE GaN thin film dislocation density |
| 08/13/2008 | CN101240450A Synthesis method for producing potassium titanate series crystal whisker and titanium dioxide crystal whisker products |
| 08/13/2008 | CN101240449A Method for purifying silicon |
| 08/13/2008 | CN101240448A Vacuum purifying furnace specially used for metal silicon/silicon dioxide and purifying method thereof |
| 08/13/2008 | CN101240447A 硅晶片及其制造方法 A silicon wafer and manufacturing method thereof |
| 08/13/2008 | CN101240445A Heater rotating device used for silicon carbide epitaxy |
| 08/13/2008 | CN101240444A Method and device for manufacturing silica semiconductor wafer |
| 08/13/2008 | CN100410428C Self frequency-conversion laser crystal rare earth ion activated rare earth molybdenate |
| 08/13/2008 | CN100410427C Method for preparing material of ZrW1.7Mo0.308 single crystal in minus heat expansion |
| 08/13/2008 | CN100410426C Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same |
| 08/12/2008 | US7411274 Silicon semiconductor substrate and its manufacturing method |
| 08/12/2008 | US7411273 Nitride semiconductor substrate |
| 08/12/2008 | US7410539 Template type substrate and a method of preparing the same |
| 08/12/2008 | CA2405420C High temperature/high pressure colour change of diamond |
| 08/07/2008 | WO2008094491A1 New laser uses for single-crystal cvd diamond |
| 08/07/2008 | WO2008093759A1 Method for producing group 3-5 compound semiconductor |
| 08/07/2008 | WO2008093576A1 Silicon crystalline material and method for manufacturing the same |
| 08/07/2008 | WO2008093512A1 Polycrystal silicon, polycrystal silicon base, manufacturing method thereof, and photoelectric conversion element using the polycrystal silicon base |
| 08/07/2008 | WO2008093389A1 Microwave plasma cvd system |
| 08/07/2008 | WO2008092587A2 Synthetic crystal and method for the production thereof |
| 08/07/2008 | US20080188373 Precursor Solutions and Methods of Using Same |
| 08/07/2008 | DE102007006731A1 Zinc oxide single crystals production involves heating zinc oxide containing crucible from outside by inductively operated heat source and defined cooling of zinc oxide melt in crucible by generating temperature gradients |
| 08/07/2008 | DE102007005118A1 Synthetischer Kristall und Verfahren zu dessen Herstellung Synthetic crystal and method of producing the |
| 08/06/2008 | EP1953831A2 Stacked photoelectric conversion device and method of producing the same |
| 08/06/2008 | EP1953801A1 Radiation detector |