Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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09/25/2008 | CA2681353A1 Method and apparatus for manufacturing silicon ingot |
09/24/2008 | EP1972702A1 Method for manufacturing aluminum nitride crystal, aluminum nitride crystal, aluminum nitride crystal substrate and semiconductor device |
09/24/2008 | EP1972607A1 Anisotropically shaped ceramic particles and process for production of the same |
09/24/2008 | CN100421213C Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices |
09/24/2008 | CN100420776C Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus |
09/24/2008 | CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same |
09/23/2008 | US7427818 Relaxor ferroelectric solid-solution single crystal, device, and method of using device |
09/23/2008 | US7427556 Method to planarize and reduce defect density of silicon germanium |
09/23/2008 | CA2419709C Semiconductive polycrystalline diamond |
09/23/2008 | CA2401968C Intermetallic compound superconductors and alloy superconductors, and methods of making them |
09/18/2008 | WO2008111401A1 Method of forming film of group iii nitride such as gallium nitride |
09/18/2008 | WO2008111289A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
09/18/2008 | WO2008111277A1 Single crystal zinc oxide substrate |
09/18/2008 | US20080227617 Artificial Corundum Crystal |
09/18/2008 | DE10343522B4 Verfahren und Speichermedium zur Steuerung der Behandlung eines Kristalls mit einer Flüssigkeit A method and storage medium for controlling the treatment of a crystal with a liquid |
09/17/2008 | EP1970946A1 AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
09/17/2008 | EP1969606A1 Microtips and nanotips, and method for their production |
09/17/2008 | EP1459372A4 Shaped nanocrystal particles and methods for making the same |
09/17/2008 | EP1157428B1 Thin multiple quantum well active layer LED with controlled oxygen-doping |
09/17/2008 | CN201116314Y Polysilicon directional solidification down-drawing crystal growth barycenter driving transmission mechanism |
09/17/2008 | CN101265607A Graphite heater for polycrystalline silicon casting ingot process |
09/17/2008 | CN100419958C Susceptor for epitaxial growth and epitaxial growth method |
09/17/2008 | CN100419134C Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
09/17/2008 | CN100419133C Method for growing high-performance tube type sapphire back cover |
09/17/2008 | CN100419132C Prepn process of cubic monocrystalline magnesia particle with tetragonal and hexagonal burrow-shaped mesopores |
09/17/2008 | CN100419131C Method of preparing rod, wire and hexagonal shaped C60 monocrystal |
09/17/2008 | CN100419130C Sb2Te3 monocrystalline nanometer line ordered array and its preparation method |
09/16/2008 | CA2483108C Drop tube type granular crystal producing device |
09/12/2008 | WO2008108381A1 Process for producing group iii nitride crystal |
09/12/2008 | WO2008107575A1 Method for recycling helium and device for implementing the same |
09/12/2008 | WO2008107010A1 Method and device for the production of a compound semiconductor material by means of gas phase epitaxy |
09/12/2008 | WO2008081103A3 Crystal growth in a solution in stationary conditions |
09/12/2008 | WO2008077386A3 METHOD FOR PRODUCING ONE-DIMENSIONAL COAXIAL Ge/SiCxNy HETEROSTRUCTURES, CORRESPONDING STRUCTURE AND USE OF SAID STRUCTURE |
09/11/2008 | US20080220593 Nanoparticles |
09/11/2008 | US20080219910 Single-Crystal GaN Substrate |
09/11/2008 | US20080216892 Shaped nanocrystal particles and methods for making the same |
09/10/2008 | EP1968096A2 Material of protective layer, method of preparing the same, protective layer formed of the material, and plasma display panel including the protective layer |
09/10/2008 | EP1967599A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
09/10/2008 | EP1967598A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
09/10/2008 | EP1966847A2 Methods for oriented growth of nanowires on patterned substrates |
09/10/2008 | EP1663881B1 Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method |
09/10/2008 | EP1342075B1 Device contaning nanosensors for detecting an analyte and its method of manufacture |
09/10/2008 | CN101262117A Laser multiple part based on non-linear optical crystal twin structure and its design method |
09/10/2008 | CN101260567A Modified four-feet needle-shaped zinc oxide crystal whisker and preparation method thereof |
09/10/2008 | CN101260566A Organic super crystal lattice material composed of disk-shaped molecule organic semiconductor and preparation method thereof |
09/10/2008 | CN101260565A Micron-stage sheet-like sodium bismuth titanate crystal and preparation method thereof |
09/10/2008 | CN101260564A Method for preparing micron/nano tungsten oxide crystal whisker/wire/bar |
09/10/2008 | CN101260563A Seed crystal free vertical gas phase growth method for thallium bromide single-crystal |
09/10/2008 | CN101260562A Spontaneous nucleation growth method for thallium bromide single-crystal |
09/10/2008 | CN101260561A Hydrothermal growth method for near-infrared up-conversion fluoride crystal |
09/10/2008 | CN101260557A Coaxial double-pipe titanium dioxide nano-pipe array thin film and preparation method thereof |
09/10/2008 | CN100417755C Process of preparing nano sulfide semiconductor line |
09/10/2008 | CN100417754C Process of preparing nano lead sulfide semiconductor particle |
09/10/2008 | CN100417753C Normal pressure zinc vapor oxidizing process for preparing four-needle zinc oxide whisker |
09/10/2008 | CN100417752C Chemical process for preparing one-dimensional nano lanthanum fluoride material |
09/10/2008 | CN100417751C Preparation method of ferromagnetic nano wire |
09/09/2008 | US7422633 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
09/09/2008 | CA2284475C Growth of gan on sapphire with mse grown buffer layer |
09/04/2008 | WO2008105136A1 Method for manufacturing silicon single crystal wafer |
09/04/2008 | WO2008089181A3 Guided diameter sic sublimation growth with multi-layer growth guide |
09/04/2008 | US20080213158 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
09/04/2008 | US20080210975 Method of fabricating heteroepitaxial microstructures |
09/04/2008 | US20080210155 Silicon single crystal and process for producing it |
09/04/2008 | DE102007010286A1 Compound semi-conductor material manufacturing, involves applying gas phase epitaxies of reactor with in mixture of feed gases, which is carried along single or multiple reaction gases in direction of substrate |
09/03/2008 | EP1964946A1 Capillary transport of nanoparticles or microparticles to form an ordered structure |
09/03/2008 | EP1723086B1 Method of incoporating a mark in cvd diamond |
09/03/2008 | EP1576591A4 Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
09/03/2008 | EP1292726B1 Single crystal diamond prepared by cvd |
09/03/2008 | EP1259662A4 Method and apparatus for growing low defect density silicon carbide and resulting material |
09/03/2008 | CN101258586A Vapor deposition of hafnium silicate materials with tris(dimethylamido)silane |
09/03/2008 | CN101258271A Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon |
09/03/2008 | CN101257079A Semiconductor layer |
09/03/2008 | CN101256922A Material of protective layer, method of preparing the same, protective layer formed of the material, and plasma display panel including the protective layer |
09/03/2008 | CN101255607A Method for preparing Ni3Al-based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method |
09/03/2008 | CN101255606A Method for preparing Ni based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method |
09/03/2008 | CN101255605A Method for preparing Ni3Al based single-crystal high-temperature alloy by employing seed crystal |
09/03/2008 | CN101255604A Method for preparing Ni based single-crystal high-temperature alloy by employing seed crystal |
09/03/2008 | CN101255603A Method for preparing II-VI family semiconductor nano-wire by template electric-sedimentation |
09/03/2008 | CN101255602A Non-crucible growing method for magneto-optic rear earth ferrite crystal |
09/03/2008 | CN101255601A Method for synthesizing spindle-shaped and bar-shaped La2CuO4 by using copper oxide as crystal seed |
09/03/2008 | CN101255600A Method for preparing ZnO-based diluted magnetic semiconductor nano-wire array |
09/03/2008 | CN101255599A Growing method for large scale CuI crystal |
09/03/2008 | CN101255598A Method for preparing solar energy grade polycrystalline silicon |
09/03/2008 | CN101255597A Crystal growth method performing physical gas-phase transmission by using curved seed crystal |
09/03/2008 | CN100416868C Nitride semiconductor wafer and method of processing nitride semiconductor wafer |
09/03/2008 | CN100415952C Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method |
09/03/2008 | CN100415951C Method for SiC whisker growth |
09/03/2008 | CN100415950C Birefraction functional material potassium pentavanadate crystal |
09/03/2008 | CN100415949C Blended ytterbium boric acid Gd yttrium oxygen calcium self-frequency doubling laser crystal |
09/03/2008 | CN100415948C Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
09/03/2008 | CN100415644C Industrial preparation method for silica carbide crystal whisker and micropowder |
09/02/2008 | US7420261 Bulk nitride mono-crystal including substrate for epitaxy |
09/02/2008 | CA2359710C Epitaxial thin films |
09/02/2008 | CA2348397C Method of forming diamond film and film-forming apparatus |
08/28/2008 | WO2008103331A2 Wide-bandgap semiconductor devices |
08/28/2008 | WO2008102358A2 Group-iii metal nitride and preparation thereof |
08/28/2008 | WO2008101982A1 Device and method for selectively depositing crystalline layers using mocvd or hvpe |
08/28/2008 | WO2008101626A1 Method for producing (al, ga)inn crystals |
08/28/2008 | WO2008101625A1 Method for producing (al,ga)n crystals |
08/28/2008 | US20080206838 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |