| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 10/16/2008 | WO2008123141A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device |
| 10/16/2008 | WO2007111967A3 Chemically attached diamondoids for cvd diamond film nucleation |
| 10/16/2008 | US20080251008 Substrate Processing Apparatus and Semiconductor Device Producing Method |
| 10/16/2008 | DE10205084B4 Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe Method for the thermal treatment of a silicon wafer and silicon wafer produced thereby |
| 10/16/2008 | DE102006041513B4 Hochtemperatur-Schichtsupraleiteraufbau und Verfahren zu seiner Herstellung High-temperature layer superconductor structure and process for its preparation |
| 10/16/2008 | DE102005013831B4 Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe Silicon wafer and method for heat treating a silicon wafer |
| 10/15/2008 | EP1981093A1 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate |
| 10/15/2008 | EP1981065A1 Process for producing soi wafer and soi wafer |
| 10/15/2008 | EP1980652A2 Multilayer nanocrystal structure and method for producing the same |
| 10/15/2008 | EP1654405B1 Method for treating a crystal by applying microdrops thereto |
| 10/15/2008 | EP1394865B1 Iii group nitride based semiconductor element and method for manufacture thereof |
| 10/15/2008 | CN201133766Y Polycrystalline silicon fine ingot furnace adopting gradient temperature reduction |
| 10/15/2008 | CN201133765Y Polycrystalline silicon segregation ingot furnace |
| 10/15/2008 | CN201132204Y Furnace body protecting equipment for polycrystalline silicon ingot furnace |
| 10/15/2008 | CN101286728A Energy exchanging device for magnetoelectric resonant |
| 10/15/2008 | CN100425745C Method for developing potassium fluoroboric beryllium acid / sodium crystal through hydrothermal method |
| 10/15/2008 | CN100425744C Homogeneous-thickness silicon-phase epitaxial-layer growth device and method |
| 10/15/2008 | CN100425743C Process for growing gallium nitride single crystal utilizing new flux molten-salt growth method |
| 10/15/2008 | CN100425742C Method for developing rubidium fluoroboric beryllium acid / cesium monocrystal through hydrothermal method |
| 10/14/2008 | US7435667 Method of controlling polysilicon crystallization |
| 10/14/2008 | US7435608 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 10/14/2008 | US7435297 Molten-salt-based growth of group III nitrides |
| 10/14/2008 | US7435295 Method for producing compound single crystal and production apparatus for use therein |
| 10/14/2008 | CA2326056C Direct synthesis process of indium phosphide |
| 10/09/2008 | WO2008120435A1 Method of growing single crystal and single crystal pulling apparatus |
| 10/09/2008 | WO2008085998A3 Crystalline gallium nitride and associated wafer and device |
| 10/09/2008 | US20080248304 Growth of single crystal nanowires |
| 10/09/2008 | US20080248291 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 10/09/2008 | US20080248259 Gallium nitride/sapphire thin film having reduced bending deformation |
| 10/09/2008 | US20080247935 Compound Semiconductor Substrate |
| 10/09/2008 | US20080246054 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it |
| 10/09/2008 | US20080246053 P-Type Group III Nitride Semiconductor and Production Method Thereof |
| 10/09/2008 | CA2681752A1 Crystalline anti-human 1l-12 antibodies |
| 10/08/2008 | EP1978137A1 PROCESS FOR PRODUCING SiC SINGLE CRYSTAL |
| 10/08/2008 | EP1977029A2 Crystalline composition, device, and associated method |
| 10/08/2008 | EP1977028A1 Process for growth of low dislocation density gan |
| 10/08/2008 | EP1620881B1 Method for texturing surfaces of silicon wafers |
| 10/08/2008 | EP1052313B1 Silicon wafer and method of manufacture thereof |
| 10/08/2008 | CN201128779Y Preparing device for monocrystalline silicon film/ polysilicon film and components thereof |
| 10/08/2008 | CN201128778Y Railboat for preventing silicon chip from edge-breaking in polycrystalline growing process |
| 10/08/2008 | CN101283122A ZnO crystal, method for growing the crystal, and method for manufacture of light-emitting element |
| 10/08/2008 | CN101281864A Method and apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
| 10/08/2008 | CN101281863A Method for preparing large scale nonpolar surface GaN self-supporting substrate |
| 10/08/2008 | CN101280460A Method for preparing beta phase silicon nitride rod-like crystal whisker by self-propagating synthetic method |
| 10/08/2008 | CN101280459A Growing method of lanthanum aluminate crystal |
| 10/08/2008 | CN101280458A Growing method of carbon-doped sapphire crystal by EFG method |
| 10/08/2008 | CN101280457A Preparation of silicon dioxide nano-tube |
| 10/08/2008 | CN101280456A Growing method by Ti3O5 by bridgman method |
| 10/08/2008 | CN101279374A Method for preparing metallic simple substance nano-crystal material |
| 10/08/2008 | CN100424904C Thermoelectric material of isotope battery and its preparation method |
| 10/08/2008 | CN100424817C Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate |
| 10/08/2008 | CN100424236C Two-dimensional photonic crystal with large absolute band gap |
| 10/08/2008 | CN100424235C Process for producing lithium tantalate crystal |
| 10/08/2008 | CN100424234C Formulation and preparation of solar energy grade silicon single crystal material |
| 10/08/2008 | CN100424233C Prepn process of polycrystalline Zinc oxide film material |
| 10/08/2008 | CN100424225C Manufacturing method of colored diamond by ion implantation and heat treatment |
| 10/07/2008 | US7433788 Crystallization of IGF-1 |
| 10/07/2008 | US7431765 Process for preparing single crystal silicon having improved gate oxide integrity |
| 10/07/2008 | CA2403236C Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating |
| 10/02/2008 | WO2008117571A1 Process for producing nitride single crystal |
| 10/02/2008 | WO2008117564A1 Method for manufacturing nitride single crystal |
| 10/02/2008 | WO2008092587A3 Synthetic crystal and method for the production thereof |
| 10/02/2008 | WO2008063444A3 Gallium nitride crystals and wafers |
| 10/02/2008 | WO2008051585A3 Gallium nitride crystal |
| 10/02/2008 | WO2007143076A3 Nanoparticles and coated nanoparticles |
| 10/02/2008 | US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics |
| 10/02/2008 | US20080236476 Silicon single crystal wafer for particle monitor |
| 10/02/2008 | DE19703620B4 Einkristall-Ziehvorrichtung Single crystal pulling apparatus |
| 10/01/2008 | EP1975990A1 Method for manufacturing silicon single crystal wafer |
| 10/01/2008 | EP1975283A1 Process for producing silicon single crystal wafer |
| 10/01/2008 | EP1974069A1 Symmetrical pulling of composite ribbons |
| 10/01/2008 | EP1641964B1 Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 10/01/2008 | EP1310583B1 Method for manufacturing of silicon single crystal wafer |
| 10/01/2008 | CN101278411A Grown photonic crystals in semiconductor light emitting devices |
| 10/01/2008 | CN101275285A Tetrapod zinc oxide whisker coated with functional layer and preparation thereof |
| 10/01/2008 | CN101275282A Preparation for superlattice thermoelectric material |
| 10/01/2008 | CN101275281A Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal |
| 10/01/2008 | CN101275280A Preparation for InAsSb thick film material |
| 10/01/2008 | CN101275279A Piezo crystal having four-lattice structure |
| 10/01/2008 | CN101275278A Stibium gallium silicate piezoelectric single crystal |
| 10/01/2008 | CN101275277A Niobium barium gallium silicate crystal, preparation and use thereof |
| 10/01/2008 | CN101275276A Preparation for sodium titanate crystal whisker |
| 10/01/2008 | CN101275275A Method for preparing stoichiometric proportion lithium niobate or lithium tantalate wafer |
| 10/01/2008 | CN101275274A Manufacturing method for artificial hair crystal |
| 10/01/2008 | CN101275273A Manufacturing method for piezoelectric quartz |
| 10/01/2008 | CN101275272A Improved temperature gradient method for BaY2F8 monocrystal growing and device therefor |
| 10/01/2008 | CN101275271A Methods for growing ZnO monocrystalline film and microcrystalline film, and p type doping of ZnO |
| 10/01/2008 | CN101275194A Magnetic shape memory alloy monocrystalline and preparation thereof |
| 10/01/2008 | CN100423215C Shaped nanocrystal particles and methods for working the same |
| 10/01/2008 | CN100422395C Preparation method of penta-member plane square chalcogenide metal cluster compound functional molecular crystal |
| 10/01/2008 | CN100422394C Method for preparing high-quality ZnO single-crystal film on si (111) substrate |
| 09/25/2008 | WO2008114855A1 Process for producing zinc oxide single-crystal |
| 09/25/2008 | WO2008114845A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
| 09/25/2008 | WO2008114822A1 Method and apparatus for manufacturing silicon ingot |
| 09/25/2008 | WO2008114466A1 Silicon of prismatic shape and process for producing the same |
| 09/25/2008 | US20080233277 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
| 09/25/2008 | US20080229999 Method Of Manufacturing A Calcium Fluoride Single Crystal |
| 09/25/2008 | DE10313037B4 Verfahren zur Herstellung einer Wasserstoffspeicherlegierung A process for producing a hydrogen storage alloy |
| 09/25/2008 | DE10234250B4 Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium An apparatus and method for monitoring the crystallization of silicon |
| 09/25/2008 | DE102006018711B4 Werkstoff, insbesondere für ein optisches Bauteil zum Einsatz in der Mikrolithographie und Verfahren zur Herstellung eines Formkörpers aus dem Werkstoff Material, in particular for an optical component for use in microlithography and method for producing a shaped body from the material |