Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2008
11/19/2008CN101307487A Directional solidification method and its device for continuous production for polycrystalline silicon ingot
11/19/2008CN101307486A Electric plating synthesis method for diamond under atmospheric pressure
11/19/2008CN101307485A Nitrogen source ionization method and device for semiconductor material vapor deposition growth system
11/19/2008CN101307479A TiO2 nanometer pore array material preparation method and uses thereof
11/19/2008CN100435268C Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof
11/19/2008CN100434574C Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal
11/19/2008CN100434573C Method for developing aluminum nitride crystal in large size through flow of plasma flame
11/18/2008US7452790 Method of fabricating thin film transistor
11/18/2008US7452420 Apparatus and method for diamond production
11/18/2008CA2386472C Growth of diamond clusters
11/15/2008CA2588906A1 Fe3al(ru) nanocrystalline alloys and use thereof in nanocrystalline form or not for the production of electrodes for the synthesis of sodium chlorate
11/13/2008WO2008135444A1 Method and device for preparing a multilayered coating on a substrate
11/13/2008DE10047345B4 Wärmebehandlungsverfahren eines Siliciumwafers und behandelter Siliciumwafer Heat treatment process of a silicon wafer and treated silicon wafer
11/13/2008CA2685586A1 Method and device for preparing a multilayered coating on a substrate
11/12/2008EP1990809A1 Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material
11/12/2008EP1990313A1 Method to produce light-emitting nano-particles of diamond
11/12/2008EP1699951B1 Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
11/12/2008EP1535309B1 Radiation detector
11/12/2008CN101305115A Ferroelectric single crystal, surface acoustic filter making use of the same and process for producing the filter
11/12/2008CN101302648A Gallium nitride thin film epitaxial growth structure and method
11/12/2008CN101302647A Large size barium borate bismuth nonlinear optical crystal and preparation thereof
11/12/2008CN101302646A Method for producing semiconductor wafer of silicon and semiconductor wafer of silicon
11/12/2008CN101302609A Preparation of Ti5Si3 by normal pressure chemical vapor deposition
11/12/2008CN101302006A Preparation of tube wall layer number-controllable nano-carbon tube
11/12/2008CN100433259C Semiconductor substrate and process for producing it
11/12/2008CN100433257C Process for producing monocrystal thin film and monocrystal thin film device
11/12/2008CN100432303C Prepn process of nanometer wire and nanometer rod of monocrystalline perovskite type compound oxide La0.6Sr0.4CoO3
11/12/2008CN100432302C Sb doped P-type ZnO crystal film and preparation method thereof
11/11/2008US7449134 crystallization of 4-dimethylamino-4-stilbazolium tosylate (DAST), useful as an electro-optical element
11/06/2008WO2008134568A2 Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase
11/06/2008WO2008133278A1 Process for producing silicon single crystal, apparatus therefor and silicon single crystal ingot
11/06/2008WO2008133205A1 Silicon crystal material and method for manufacturing fz silicon single crystal by using the same
11/06/2008WO2008132323A2 Device and method for producing self-sustained plates of silicon or other crystalline materials
11/06/2008WO2008131794A1 Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as wafer of poly-crystalline or multi-crystalline...
11/06/2008WO2008103331A3 Wide-bandgap semiconductor devices
11/06/2008DE19712796B4 Epitaktischer SiC-Wafer, Verfahren zu seiner Herstellung und Halbleiter-Vorrichtung, die diesen verwendet SiC epitaxial wafer, a process for its preparation and semiconductor device using this
11/05/2008EP1988194A1 Substrate for growing of compound semiconductor and method of epitaxial growth
11/05/2008EP1988193A1 Epitaxial wafer manufacturing method
11/05/2008EP1986956A1 Method for preparing granular polycrystalline silicon using fluidized bed reactor
11/05/2008CN101298698A Method for surface in situ synthesis of conductive polyaniline PANi by using four acicular type zinc oxide crystal whisker T-ZnOw
11/05/2008CN101298697A Plating solution for preparing Ag2Te thin film or nano-wire array
11/05/2008CN101298696A Method for preparing single crystal granule tungsten carbide
11/05/2008CN101298695A Growth method of niobic acid calcium single crystal
11/05/2008CN101298694A Novel method for in situ preparing nano-zinc borate crystal whisker in normal pressure normal pressure liquid phase
11/05/2008CN101298693A Double-layer airflow quartz fairing reaction chamber apparatus for MOCVD system
11/05/2008CN101298457A Method for producing higher silanes
11/04/2008US7446217 Composition and method for low temperature deposition of silicon-containing films
11/04/2008US7446130 Catalysts; ordered multicomponent colloids formed by attractive electrostatic interactions; electro-optic materials, magneto-optic materials, ferroelectric materials, ferromagnetic materials, electrostrictive materials, and magnetostrictive materials
11/04/2008US7446045 Method of manufacturing nitride substrate for semiconductors
11/04/2008US7445681 Intermetallic compound superconducting material comprising magnesium and beryllium and alloy superconducting material containing the intermetallic compound
11/04/2008US7445673 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
10/2008
10/30/2008WO2008129960A1 Expandable graphite sheet, method for protecting carbonaceous crucible using the expandable graphite sheet, and single crystal pulling apparatus
10/30/2008WO2008128781A1 Method for restructuring semiconductor layers
10/30/2008US20080268150 Method of Coating for Diamond Electrode
10/30/2008DE19621691B4 Wolframkarbidkristall und Verfahren zu dessen Herstellung Wolframkarbidkristall and process for its preparation
10/30/2008DE102007020006A1 Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen Apparatus and method for the production of poly- or multicrystalline silicon, thereby produced mass block (ingot) and poly- or multicrystalline silicon wafers, and use for the production of solar cells
10/29/2008EP1985593A2 Quartz glass crucible, its process of manufacture and use
10/29/2008EP1984545A2 Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
10/29/2008EP1984543A2 Synthesis of alloyed nanocrystals in aqueous or water-soluble solvents
10/29/2008EP1984297A1 High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
10/29/2008EP1498518B1 Method for the production of silicon carbide single crystal
10/29/2008EP1346087A4 Energy pathway arrangement
10/29/2008EP1292726B8 Single crystal diamond prepared by cvd
10/29/2008CN101296787A Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
10/29/2008CN101294305A Selenium selenium zinc compound photoresistor material
10/29/2008CN101294304A Growth technique for cadmium tungstate twinkling monocrystal with crucible descent method
10/29/2008CN101294303A Low-temperature solid phase reaction preparation of silicon nitride nano-material
10/29/2008CN101294302A Preparation technique for rare earth doped lutetium aluminum carbuncle crystal
10/29/2008CN101294301A Nonlinear optical crystal vanadium cadmium tellurite
10/29/2008CN101294300A Novel technique for producing solar level polysilicon
10/29/2008CN101293629A Process for producing carbon nano-tube or nano-wire bifurcate structure
10/29/2008CN100429334C Pyroelectric single crystal material of PMN-PT and application thereof
10/28/2008US7442660 Synthetic fire opal
10/28/2008US7442431 enhanced wear resistance and toughness; utilizing short pulses of precursors followed by purging steps with an inert gas such as Ar
10/28/2008US7442253 Process for forming low defect density, ideal oxygen precipitating silicon
10/28/2008US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
10/28/2008US7442250 Lithium tantalate substrate and method for producing same
10/23/2008WO2008126532A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal
10/23/2008WO2008125104A1 Method and apparatus for producing a single crystal
10/23/2008WO2008096314A3 Polycrystalline diamond (pcd) materials
10/23/2008WO2008078302A3 Iii-nitride light emitting diodes grown on templates to reduce strain
10/23/2008WO2008078300A3 Iii-nitride light emitting diodes grown on templates to reduce strain
10/23/2008DE112007000115T5 Verfahren zum Herstellen von supraleitendem Oxidmaterial A method for producing a superconducting oxide material
10/23/2008DE112006002595T5 Herstellungsvorrichtung und Herstellungsverfahren für ein Einkristall-Halbleiter Production apparatus and production method for a single crystal semiconductor
10/23/2008DE10344986B4 Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten A method for generating improved heteroepitaxial grown on silicon substrates Siliziumkarbidschichten
10/23/2008CA2688739A1 Method and apparatus for producing a single crystal
10/22/2008EP1983080A2 Single crystal diamond prepared by CVD
10/22/2008EP1983070A2 Metal oxide layer formed on substrates and its fabrication methods
10/22/2008EP1982370A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
10/22/2008CN201138138Y Polycrystalline silicon segregating and cogging furnace without need of moving component
10/22/2008CN101292062A Superabrasive particle synthesis with controlled placement of crystalline seeds
10/22/2008CN100428409C Nitride-based semiconductor substrate and semiconductor device
10/22/2008CN100427649C Growth method of doped-vanadium yttrium-iron-garnet crystal
10/21/2008US7438887 A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve in the form of a layer; microporous network; axially aligned layers; superior thermal and chemical properties to organic polymers; decreased brittleness; increased mechanical properties
10/21/2008US7438762 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
10/21/2008US7438761 Apparatus for fabricating a III-V nitride film and a method for fabricating the same
10/16/2008WO2008123801A1 Diamond cleaning method
10/16/2008WO2008123545A1 ZnO THIN FILM
10/16/2008WO2008123441A1 Polycrystalline thin film and method for producing the same and oxide superconductor
10/16/2008WO2008123242A1 Substrate for epitaxial growth and epitaxial growth process
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