| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/05/2009 | CN100524579C High-performance semiconductor nanometer silicon field electronic emission material and its preparation method |
| 08/05/2009 | CN100523313C Silicon wafer and its heat treatment method |
| 08/05/2009 | CN100523312C Preparation method of calcium sulfate whisker |
| 08/05/2009 | CN100523311C Crystal of barium tellurium aluminate, preparation method and application |
| 08/05/2009 | CN100522805C Dust-free and pore-free, high-purity granulated polysilicon |
| 08/05/2009 | CN100522618C Stacked body, exciter and ink-jet head applying the stacked body |
| 08/04/2009 | US7568609 Welding method |
| 07/30/2009 | WO2009093753A1 Method for manufacturing iii metal nitride single crystal |
| 07/30/2009 | US20090189185 Epitaxial growth of relaxed silicon germanium layers |
| 07/30/2009 | US20090188695 Nanostructures and method for making such nanostructures |
| 07/29/2009 | EP2083099A1 Process for producing group iii element nitride crystal |
| 07/29/2009 | EP2083098A1 Apparatus for manufacturing semiconductor single crystal ingot and method using the same |
| 07/29/2009 | EP2082419A2 Systems and methods for nanowire growth |
| 07/29/2009 | EP2082081A1 C-plane sapphire method and apparatus |
| 07/29/2009 | EP1740331B1 Method and arrangement for crystal growth from fused metals or fused solutions |
| 07/29/2009 | EP1500633B1 Production method for compound semiconductor single crystal |
| 07/29/2009 | EP1268884B1 Method and device for making substrates |
| 07/29/2009 | CN201280608Y Flexible structure cooling jacket of polysilicon reduction furnace |
| 07/29/2009 | CN101496127A Plasma display panel and method for manufacturing the same |
| 07/29/2009 | CN101496126A Plasma display panel and method for manufacturing the same |
| 07/29/2009 | CN101495682A Method and device for producing classified high-purity polycrystalline silicon fragments |
| 07/29/2009 | CN101495681A Device and method for production of semiconductor grade silicon |
| 07/29/2009 | CN101495675A Chemical vapor deposition reactor having multiple inlets |
| 07/29/2009 | CN101492836A Method for manufacturing solar battery grade polysilicon product |
| 07/29/2009 | CN101492835A Method for extension of plumbago alkene with ultra-thin hexagonal phase silicon carbide membrane on insulated substrate |
| 07/29/2009 | CN100519831C Annealing single crystal chemical vapor depositon diamonds |
| 07/23/2009 | WO2009091285A1 Personified grown jewellery diamond |
| 07/23/2009 | WO2009091067A1 Silicon carbide single crystal ingot, and substrate and epitaxial wafer obtained from the silicon carbide single crystal ingot |
| 07/23/2009 | WO2009091053A1 Crystal production method, frozen crystal production method, crystal, crystal structure analysis method, crystallization screening method, and crystallization screening apparatus |
| 07/23/2009 | WO2009090923A1 Laminate and process for producing the laminate |
| 07/23/2009 | WO2009090904A1 Method for growing group iii nitride crystal |
| 07/23/2009 | WO2009090840A1 Method for growing gallium nitride crystal and method for producing gallium nitride substrate |
| 07/23/2009 | WO2009090831A1 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 07/23/2009 | WO2009090821A1 Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate |
| 07/23/2009 | WO2009090536A1 Method for growing silicon carbide single crystal |
| 07/23/2009 | WO2009090535A1 Method for growing silicon carbide single crystal |
| 07/23/2009 | CA2712149A1 Laminated body and the method for production thereof |
| 07/22/2009 | EP2080823A1 Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element |
| 07/22/2009 | EP1538243B1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 07/22/2009 | EP1514838B1 Process for producing nanoparticles |
| 07/22/2009 | EP1504141B1 Method for producing inorganic semiconductor nanocrystalline rods and their use |
| 07/22/2009 | CN101490316A Piezoelectric substance, piezoelectric element, and liquid discharge head and liquid discharge apparatus using piezoelectric element |
| 07/22/2009 | CN101487139A Process for depositing polycrystalline silicon |
| 07/22/2009 | CN100517571C 3-5 group compound semiconductor and method for preparation thereof |
| 07/22/2009 | CN100516319C Seed crystal free vertical gas phase growth method for thallium bromide single-crystal |
| 07/22/2009 | CN100516318C Spontaneous nucleation growth method for thallium bromide single-crystal |
| 07/21/2009 | US7563319 Manufacturing method of silicon wafer |
| 07/16/2009 | WO2009087724A1 Single crystal producing device |
| 07/16/2009 | WO2009087104A1 Dosimeter based on monocrystalline synthetic diamond |
| 07/16/2009 | US20090181169 Method for growing thin films |
| 07/16/2009 | US20090180948 making optical components or elements from CaF2 with parallel (100)- or (110)-oriented optic axes (principle direction) by tempering at elevated temperatures and suitably adapted cooling |
| 07/16/2009 | DE10155712B4 Zinkoxid-Schicht und Verfahren zu dessen Herstellung Zinc oxide layer, and process for its preparation |
| 07/15/2009 | EP2078105A1 Method for forming nitride crystals |
| 07/15/2009 | EP1302976B1 Single crystal wafer and solar battery cell |
| 07/15/2009 | EP1272264B2 High temperature/high pressure colour change of diamond |
| 07/15/2009 | CN101484617A Process for producing substrate of AlN crystal, method of growing AlN crystal, and substrate of AlN crystal |
| 07/15/2009 | CN101484616A One hundred millimeter sic crystal grown on off-axis seed |
| 07/15/2009 | CN101481823A Control method for high pressure protective gas for mercury cadmium telluride material mercury-rich preparing technology |
| 07/15/2009 | CN101481822A Method for preparing beta-sialon crystal whisker by two-step reduction nitridation reaction |
| 07/15/2009 | CN101481821A Novel technology for growth of yttrium-aluminum garnet crystal and equipment thereof |
| 07/15/2009 | CN101481820A Ultrafast scintillation crystal CuI and growth method |
| 07/15/2009 | CN101481819A Process for preparing polysilicon film |
| 07/15/2009 | CN100513653C Preparation method for potassium titanate crystal whisker or potassium titanate granule based on disintegration effect |
| 07/15/2009 | CN100513652C Technique and device for low dislocations germanium mono-crystal with crucible lowering down czochralski method |
| 07/14/2009 | US7560725 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| 07/14/2009 | US7560086 Single crystal diamond having 12C, 13C, and phosphorous |
| 07/14/2009 | CA2227615C Silicon nitride nanowhiskers and method of making same |
| 07/09/2009 | WO2009083694A1 Apparatus including a plasma torch for purifying a semiconductor material |
| 07/09/2009 | WO2009067641A3 R-plane sapphire method and apparatus |
| 07/09/2009 | US20090175777 Single crystal diamond prepared by cvd |
| 07/09/2009 | CA2646374A1 Polycrystalline ultra-hard compact constructions |
| 07/09/2009 | CA2646370A1 Polycrystalline ultra-hard constructions with multiple support members |
| 07/08/2009 | EP2077346A2 Method for measuring point defect distribution of silicon single crystal lingot |
| 07/08/2009 | EP2077345A1 Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 07/08/2009 | EP2077344A1 Method of applying a diamond layer to a graphite substrate |
| 07/08/2009 | EP1702352B1 Nanotube fabrication basis |
| 07/08/2009 | EP1620294A4 Chemical vapor deposition epitaxial growth |
| 07/08/2009 | CN101479411A Silicon single crystal manufacturing system and silicon single crystal manufacturing method using the system |
| 07/08/2009 | CN101479410A Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| 07/08/2009 | CN101476162A Method for synthesizing flower shaped ZnSe semiconductor nanocrystalline |
| 07/08/2009 | CN101476161A Method for synthesizing acicular ZnSe semiconductor nanocrystalline |
| 07/08/2009 | CN101476160A Ultrasonic aging synthesis for manganese doped zinc sulphide nanocrystalline |
| 07/08/2009 | CN101476159A Novel ultraviolet light passband filter material sodium nickel sulfate tetrahydrate crystal |
| 07/08/2009 | CN101476158A Rubidium nickel sulfate hexahydrate crystal for ultraviolet light band filter |
| 07/08/2009 | CN101476157A Method for preparing silicon carbide whisker by laser irradiation of nano silicon carbide powdered material |
| 07/08/2009 | CN101476156A Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method |
| 07/08/2009 | CN101476155A Electrochemical deposition preparation for Mg doped ZnO nano-wire |
| 07/08/2009 | CN101476154A Rapid coning method for heavy caliber potassium dihydrogen phosphate single crystal |
| 07/08/2009 | CN101476153A Reduction production process for polysilicon and reducing furnace for production thereof |
| 07/08/2009 | CN100510205C Yb-doped gadolinium germanate, lanthanum germanate and melt-method growth process thereof |
| 07/08/2009 | CN100510204C Lithium niobate pn junction and preparation method thereof |
| 07/08/2009 | CN100510203C Crystal growth way of crystal pulling method for tantalate |
| 07/08/2009 | CN100510202C Method for preparing garnet single crystal and garnet single crystal prepared thereby |
| 07/08/2009 | CN100510201C Method for synthesizing beryllium fluoroborate single-phase polycrystalline powder |
| 07/08/2009 | CN100510200C Equipment for pulling crystal using direct pulling |
| 07/07/2009 | US7557018 Element fabrication substrate |
| 07/07/2009 | US7556688 Method for achieving low defect density AlGaN single crystal boules |
| 07/07/2009 | US7556687 Gallium nitride crystal substrate and method of producing same |
| 07/02/2009 | WO2009081720A1 Method for manufacturing epitaxial silicon wafer |
| 07/02/2009 | WO2009081687A1 Apparatus for growing nitride single crystal |