| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 02/02/2010 | US7655490 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 02/02/2010 | US7655208 Single crystalline diamond and producing method thereof |
| 02/02/2010 | US7655197 III-V nitride substrate boule and method of making and using the same |
| 02/02/2010 | US7655089 Process and apparatus for producing a single crystal of semiconductor material |
| 01/28/2010 | WO2010010950A1 Garnet-type single crystal, optics using same and related apparatus thereof |
| 01/28/2010 | WO2010010719A1 Domain-patterned sapphire substrate and chip for screening biomolecule or cell culture substrate using the same |
| 01/28/2010 | WO2010010628A1 Process for producing single crystal, flow regulation tube and single crystal pulling apparatus |
| 01/28/2010 | WO2010010352A1 Diamond material |
| 01/28/2010 | WO2010010344A1 Solid state material |
| 01/28/2010 | WO2010009597A1 Doped low temperature phase bab2o4 single crystal, the manufacturing method thereof and wave changing elements therefrom |
| 01/28/2010 | WO2010009581A1 A doped low temperature phase barium metaborate single crystal, growth method and frequency converter thereof |
| 01/28/2010 | US20100021373 Lithium tantalate substrate and process for its manufacture |
| 01/28/2010 | US20100019273 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device |
| 01/28/2010 | DE112008000893T5 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot Method and apparatus for manufacturing silicon single crystals of silicon and |
| 01/28/2010 | CA2725084A1 Diamond material |
| 01/27/2010 | EP2147991A1 Expandable graphite sheet, method for protecting carbonaceous crucible using the expandable graphite sheet, and single crystal pulling apparatus |
| 01/27/2010 | CN201390804Y CGC single-crystal silicon crystal growth controller |
| 01/27/2010 | CN201390803Y Fluidized bed reaction equipment without sieve plate for preparing polysilicon granules |
| 01/27/2010 | CN100585838C Polycrystalline silicon layer, method for fabricating the same and flat panel display |
| 01/27/2010 | CN100585032C Method for preparing lead telluride nano-wire |
| 01/27/2010 | CN100585031C Dislocation-free silicon monocrystal production method |
| 01/27/2010 | CN100585030C Method for preparing monocrystalline silicon thin film |
| 01/26/2010 | US7651861 Method of producing fluorite crystal, fluorite and optical system incorporating the same |
| 01/21/2010 | WO2010009325A2 Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe) |
| 01/21/2010 | WO2010008595A1 Ready-to-sinter spinel nanomixture |
| 01/21/2010 | WO2010008037A1 Algan bulk crystal manufacturing method and algan substrate manufacturing method |
| 01/21/2010 | WO2010007983A1 Method for growing gan crystal |
| 01/21/2010 | WO2010007982A1 Piezoelectric single crystal and production method therefor |
| 01/21/2010 | WO2010007867A1 Process for producing group iii nitride crystal and group iii nitride crystal |
| 01/21/2010 | DE19734736B4 Behälter aus pyrolytischem Bornitrid Pyrolytic boron nitride container |
| 01/21/2010 | DE112008000486T5 Verfahren für die Fertigung eines Einkristall-Siliziumwafers A method for manufacturing a single crystal silicon wafer |
| 01/21/2010 | DE102009033648A1 Verfahren zum Herstellen eines III-V-Verbindungshalbleiter-Substrats, Verfahren zum Herstellen eines Epitaxial-Wafers, III-V-Verbindungshalbleiter-Substrat und Epitaxial-Wafer A method of preparing a group III-V compound semiconductor substrate, a method of manufacturing the epitaxial wafer, the III-V compound semiconductor substrate and epitaxial wafer |
| 01/21/2010 | DE102009023983A1 Siliciumepitaxialwafer und das Herstellungsverfahren dafür Siliciumepitaxialwafer and the production method thereof |
| 01/21/2010 | DE102008033548A1 Optimizing division of crystalline starting body in defect-poor region, comprises determining position of crystal axes and three-dimensional shape of the body, and fixing useful volume by determining location of crystal defects in the body |
| 01/20/2010 | EP2146384A1 Method of making a laser diode |
| 01/20/2010 | EP2145987A1 Fabrication method of a group III nitride crystal substance |
| 01/20/2010 | EP2145975A2 Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus |
| 01/20/2010 | CN101631902A Crystalline composition, wafer, and semi-conductor structure |
| 01/20/2010 | CN100582325C Process for producing cadmium sulfide quantum wire |
| 01/20/2010 | CN100582324C Method for producing AIN single crystal and AIN single crystal |
| 01/20/2010 | CN100582323C Particulate titanium oxide, method and apparatus for manufacturing the same, and treatment methods using such titanium oxide |
| 01/20/2010 | CN100582322C Nano monocrystalline diamond preparation method |
| 01/20/2010 | CN100582321C Method for growing Na doping p type ZnO crystal thin film |
| 01/20/2010 | CN100582320C Method for preparing diverse microcosmic appearance zinc oxide film |
| 01/20/2010 | CN100582315C Method for preparing gradient TiO2 nano-tube arrry thin film by using multistep anodic oxidation process |
| 01/20/2010 | CN100582298C Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned |
| 01/19/2010 | US7648690 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
| 01/14/2010 | WO2010006064A2 Pulsed electrical field assisted or spark plasma sintered polycrystalline ultra hard material and thermally stable ultra hard material cutting elements and compacts and methods of forming the same |
| 01/14/2010 | WO2010005705A1 Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| 01/14/2010 | WO2010004964A1 Gan crystal substrate, gan crystal substrate manufacturing method, gan crystal substrate provided with semiconductor epitaxial layer, semiconductor device and semiconductor device manufacturing method |
| 01/14/2010 | WO2010003922A1 Method for making nanodiamond grains by homogenous nucleation in a plasma |
| 01/14/2010 | WO2010003573A1 Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient |
| 01/14/2010 | WO2010003179A1 A method of fabricating a material |
| 01/13/2010 | EP2143833A1 Silicon crystal material and method for manufacturing fz silicon single crystal by using the same |
| 01/13/2010 | EP2143832A2 Method and reactor for preparing films and devices under high nitrogen chemical potential |
| 01/13/2010 | EP2143831A1 Silica glass crucible and method for pulling up silicon single crystal using the same |
| 01/13/2010 | EP2142686A1 Method and apparatus for producing a single crystal |
| 01/13/2010 | EP2142474A1 Method to produce light-emitting nano-particles of diamond |
| 01/13/2010 | CN201381377Y Device utilizing silicon materials containing impurities for preparing high purity silicon single crystal rod |
| 01/13/2010 | CN101624725A Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate |
| 01/13/2010 | CN100580156C Controllable doping method for Si3N4 single-crystal low-dimension nano material |
| 01/13/2010 | CN100580155C Method for developing zinc oxide crystallite by chemical gas-phase transmitting process |
| 01/12/2010 | US7646038 Method of fabricating heteroepitaxial microstructures |
| 01/12/2010 | US7645517 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon |
| 01/12/2010 | US7645338 Crystalline derivatives of (E)-2-(5-chlorothien-2-yl)-N-{(3S)-1-[(1S)-1-methyl-2-morpholin-4-yl-2-oxoethyl]-2-oxopyrrolidin-3-yl}ethenesulfonamide |
| 01/07/2010 | WO2010002795A1 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation |
| 01/07/2010 | WO2010001804A1 PROCESS FOR PRODUCTION OF AlXGa(1-X)N SINGLE CRYSTAL, AlXGa(1-X)N SINGLE CRYSTAL, AND OPTICS |
| 01/07/2010 | WO2010001803A1 PROCESS FOR PRODUCTION OF AlXGa(1-X)N SINGLE CRYSTAL, AlXGa(1-X)N SINGLE CRYSTAL AND OPTICAL LENSES |
| 01/07/2010 | WO2010001709A1 Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
| 01/07/2010 | WO2010001519A1 Single crystal manufacturing apparatus and manufacturing method |
| 01/07/2010 | WO2010001518A1 Silicon single crystal wafer, process for producing silicon single crystal wafer, and method for evaluating silicon single crystal wafer |
| 01/07/2010 | DE60123591T3 Hochtemperatur/hochdruck-farbeveränderng von diamanten High-temperature / high-pressure farbeveränderng of diamonds |
| 01/06/2010 | EP2141267A1 Process for producing group iii nitride crystal |
| 01/06/2010 | EP2140046A1 Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as wafer of poly-crystalline or multi-crystalline... |
| 01/06/2010 | EP2140038A2 Group-iii metal nitride and preparation thereof |
| 01/06/2010 | CN101622381A Method for manufacturing silicon single crystal wafer |
| 01/06/2010 | CN101619498A Non-linear optical crystal diethyldithiocarbamate aluminum pentaborate, preparation method and application thereof |
| 01/06/2010 | CN101619497A Non-linear optical crystal N-methyl-1,3-propane-diammonium aluminum pentaborate, preparation method and application thereof |
| 01/06/2010 | CN101619496A Non-linear optical crystal N-methyl-1,3- propane-diammonium aluminum pentaborate, preparation method and application thereof |
| 01/06/2010 | CN101619495A Method for thermally preparing single-crystal bismuth trisulfide nano-wires from mixed solvent |
| 01/06/2010 | CN101619494A Method for preparing perovskite structure lead titanate monocrystal nano rod |
| 01/06/2010 | CN101619493A Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions |
| 01/06/2010 | CN101619492A Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions |
| 01/06/2010 | CN101619491A Frroelectric material boron potassium ermanate, preparation method and application thereof |
| 01/06/2010 | CN101619490A Ferroelectric material dehydrate potassium metagermanate tetraborate, preparation method and application thereof |
| 01/06/2010 | CN101619489A Non-linear optical crystal tetrahydrate pentaborate potassium aluminate, preparation method and application thereof |
| 01/06/2010 | CN101619488A Preparation method of single-crystal tungsten oxide with high specific surface area |
| 01/06/2010 | CN101619487A P type conductive cuprous iodide monocrystal and hydrothermal growing method thereof |
| 01/06/2010 | CN100577896C Potassium hexatitanate whisker and its preparation process |
| 01/06/2010 | CN100577895C Method for preparing cuboid indium oxide single crystal |
| 01/06/2010 | CN100577894C Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/05/2010 | US7642623 Fabrication method for polycrystalline silicon thin film and apparatus using the same |
| 01/05/2010 | US7641988 Comprises an epitaxial nitride layer with a light-emitting device structure formed on the above self-supported nitride semiconductor substrate; having large light emission with a low driving voltage; gallium nitride |
| 01/05/2010 | US7641939 Chemical vapor deposition reactor having multiple inlets |
| 01/05/2010 | US7641736 Method of manufacturing SiC single crystal wafer |
| 12/31/2009 | US20090320745 Heater device and method for high pressure processing of crystalline materials |
| 12/30/2009 | WO2009157347A1 Method for growing nitride single crystal |
| 12/30/2009 | WO2009156440A1 Thermal insulation system having variable thermal insulating capacity and the use thereof, and apparatus and method for producing monocrystalline or multicrystalline or vitreous materials |
| 12/30/2009 | EP2138612A2 Single crystal nickel-based superalloy component and manufacturing method therefor |
| 12/30/2009 | EP2138611A1 Polycrystalline thin film and method for producing the same and oxide superconductor |