| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 06/10/2009 | CN101451269A Method for preparing centimeter grade mono-layer or double layers ordered single crystal graphite layer |
| 06/10/2009 | CN101451265A Gaas single crystal substrate and epitaxial wafer using the same |
| 06/10/2009 | CN100499186C P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| 06/10/2009 | CN100497762C Method for preparing mullite crystal whisker from coal refuse and aluminum oxide |
| 06/10/2009 | CN100497761C Method for synthesizing controllable template of nano polyaniline tube |
| 06/10/2009 | CN100497760C High doping concentration silicon carbide epitaxial growth method |
| 06/10/2009 | CN100497759C Yb and Zn double-doped lead tungstate crystal and its preparation method |
| 06/10/2009 | CN100497758C Zr dopped lithium niobate crystal |
| 06/10/2009 | CN100497757C Low-temperature alkaline-solution synthesis of oxygen metal inorganic compound monocrystal nano-material |
| 06/10/2009 | CN100497756C Sapphire (Al2O3 single crystal) growing technology |
| 06/10/2009 | CN100497752C Method of solid-phase flux epitaxy growth |
| 06/09/2009 | USRE40718 Method for producing nitride monocrystals |
| 06/09/2009 | US7544345 Magnesium oxide single crystal having controlled crystallinity and method for producing the same |
| 06/09/2009 | US7544343 useful as a substrate for optical devices such as an infrared sensor; wherein a Group 14 (4B) element and a transition metal element are further included in the crystal |
| 06/09/2009 | US7544273 Deposition methods and stacked film formed thereby |
| 06/09/2009 | US7544249 Large-diameter SiC wafer and manufacturing method thereof |
| 06/09/2009 | US7544248 Lithium tantalate substrate and method of manufacturing same |
| 06/09/2009 | US7544247 Lithium tantalate substrate and method of manufacturing same |
| 06/09/2009 | US7544246 Lithium tantalate substrate and method of manufacturing same |
| 06/09/2009 | US7544245 Method for producing barium titanium oxide single-crystal piece using containerless processing |
| 06/09/2009 | US7544244 Method of manufacturing ceramic film and structure including ceramic film |
| 06/04/2009 | WO2009069706A1 Optical material, wavelength conversion element, single crystal of ferroelectric fluoride, and process for producing single crystal of ferroelectric fluoride |
| 06/04/2009 | WO2009069684A1 Heat dissipation structure, process for producing the heat dissipation structure, heat dissipation device using the heat dissipation structure, diamond heat sink, process for producing the diamond heat sink, heat dissipation device using the diamond heat sink, and heat dissipation method |
| 06/04/2009 | WO2009069564A1 Process for growing single-crystal silicon carbide |
| 06/04/2009 | WO2009068756A1 Crystallisation method |
| 06/04/2009 | US20090140652 Plasma display panel and method for manufacturing the same |
| 06/04/2009 | US20090140390 GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 06/03/2009 | EP2065491A2 Group III nitride semiconductor crystal substrate and semiconductor device |
| 06/03/2009 | EP2065490A1 GaN substrate manufacturing method, GaN substrate, and semiconductor device |
| 06/03/2009 | EP2065489A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS |
| 06/03/2009 | EP2064745A1 Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
| 06/03/2009 | EP2064374A1 Method for the growth of indium nitride |
| 06/03/2009 | CN101448984A Method for producing silicon carbide single crystal |
| 06/03/2009 | CN101445961A Superfine Mg-doped ZnO nano wire and synthetic method thereof |
| 06/03/2009 | CN101445960A Method for preparing adulteration monocrystalline zinc oxide nanometer brush by vapour deposition and device thereof |
| 06/03/2009 | CN101445959A Method for manufacturing polycrystalline silicon |
| 06/03/2009 | CN101445958A Silicon crystallization method |
| 06/03/2009 | CN101445957A Vacuum electron beam melting furnace for polysilicon purification |
| 06/03/2009 | CN100494520C Method for producing iii group element nitride crystal, production apparatus used therein, and semiconductor element produced thereby |
| 06/03/2009 | CN100494519C Zr:Fe:LiNbO3 crystal and its preparing method |
| 06/03/2009 | CN100494518C Method for growing near-stoichiometric ratio lithium niobate crystal |
| 06/03/2009 | CN100494517C Re3+,Cr5+:LnVO4 automodulation laser crystal and preparation method and application thereof |
| 06/03/2009 | CN100494516C Production method for controlling yttrium-barium-copper-oxygen superconducting thick film in-plane oriented growth in oxygen ambient |
| 06/03/2009 | CN100494515C Oriented growth method of ZnO micron tube |
| 06/03/2009 | CN100494514C Method for synthesizing ZnO micron tube |
| 06/03/2009 | CN100494513C Fluxing agent growth method for trigallium phosphate crystal |
| 06/03/2009 | CN100494512C Method and equipment for synthesizing polycrystal of phosphor, germanium and zinc |
| 06/03/2009 | CN100494511C Process for preparing gallium doped element solar energy single crystal |
| 06/03/2009 | CN100494510C Method for synthesizing diamond film under low-temperature by micro-wave and plasma |
| 06/02/2009 | US7541623 P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| 06/02/2009 | CA2555754C Scintillation substances (variants) |
| 06/02/2009 | CA2392445C Silicon layer highly sensitive to oxygen and method for obtaining same |
| 06/02/2009 | CA2347425C Fabrication of gallium nitride layers by lateral growth |
| 05/28/2009 | WO2009067641A2 R-plane sapphire method and apparatus |
| 05/28/2009 | WO2009066663A1 Polygonal columnar material of aluminum nitride single crystal, and process for producing plate-like aluminum nitride single crystal using the polygonal columnar material |
| 05/28/2009 | WO2009066566A1 PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS |
| 05/28/2009 | WO2009066464A1 Nitride semiconductor and nitride semiconductor crystal growth method |
| 05/28/2009 | WO2009065639A1 Iii-v nanoparticles and method for their manufacture |
| 05/28/2009 | WO2009065444A1 A method of producing polycrystalline and single crystal silicon |
| 05/28/2009 | WO2009042157A3 Integral single crystal/columnar grained component and method of casting the same |
| 05/28/2009 | CA2706464A1 Iii-v nanoparticles and method for their manufacture |
| 05/27/2009 | EP2063458A2 Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate |
| 05/27/2009 | EP2063457A2 Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate |
| 05/27/2009 | EP2063002A2 Method for depositing and patterning carbon nanotubes using chemical self-assembly process |
| 05/27/2009 | EP1173885A4 Dual process semiconductor heterostructures and methods |
| 05/27/2009 | CN101443488A Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate |
| 05/27/2009 | CN101443476A High crystalline quality synthetic diamond |
| 05/27/2009 | CN101442030A Group iii nitride semiconductor crystal substrate and semiconductor device |
| 05/27/2009 | CN101441999A Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor |
| 05/27/2009 | CN101440523A Ruler-like ZnS single crystal and synthesizing method thereof |
| 05/27/2009 | CN101440522A Dice-like PbS single crystal and synthesizing method thereof |
| 05/27/2009 | CN101440521A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate |
| 05/27/2009 | CN101440520A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate |
| 05/27/2009 | CN101440519A Silicon core electrode for polysilicon reducing furnace |
| 05/27/2009 | CN101440518A Apparatus for manufacturing poly crystaline silicon ingot for solar battery having door open/close device using hinge |
| 05/27/2009 | CN101440517A Method for dynamically controlling high temperature furnace inner pressure |
| 05/27/2009 | CN101440516A Direct doping method for zinc oxide single crystal growth process |
| 05/27/2009 | CN101440515A Growth method of manganese doped lithium aluminate crystal |
| 05/27/2009 | CN100492687C Nitride semiconductor substrate and nitride semiconductor device |
| 05/27/2009 | CN100492668C A series of semiconductor material |
| 05/27/2009 | CN100491604C Condensed aromatic organic semiconductor single-crystal micro/nano materials and their preparation method and application |
| 05/27/2009 | CN100491603C Process for preparing alkali metal titanium-base crystal whisker and lamellar crystal |
| 05/27/2009 | CN100491602C Process for preparing lithium titanate crystal whisker |
| 05/27/2009 | CN100491601C Polycrystal material for fast high-temperature sensing sensor |
| 05/26/2009 | US7537659 Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained |
| 05/22/2009 | WO2009064674A1 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly insoluble gases into the melt |
| 05/21/2009 | US20090127664 Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrate |
| 05/21/2009 | US20090127663 Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrate |
| 05/21/2009 | US20090127136 Electrode |
| 05/21/2009 | US20090126631 Chemical vapor deposition reactor having multiple inlets |
| 05/21/2009 | US20090126622 Device and method for counter-diffusion crystal growth |
| 05/20/2009 | EP2061082A1 Semiconductor substrate for solid state imaging device, solid state imaging device, and method for manufacturing them |
| 05/20/2009 | EP2060663A1 Oxygen-doped N-type gallium nitride single crystal substrate |
| 05/20/2009 | EP2060662A2 MBE device and method of its operation |
| 05/20/2009 | EP2059946A1 Micropipe-free silicon carbide and related method of manufacture |
| 05/20/2009 | DE112007000867T5 Verfahren und Vorrichtung zum Herstellen eines Gruppe III-Nitrid basierten Verbindungshalbleiters Method and apparatus for manufacturing a Group III nitride based compound semiconductor |
| 05/20/2009 | DE112007000836T5 Herstellungsverfahren für Halbleiterkristall und Halbleitersubstrat Manufacturing processes for semiconductor crystal and semiconductor substrate |
| 05/20/2009 | DE102007056115A1 Verfahren zum Trennen von Einkristallen A method for separating single crystals |
| 05/20/2009 | DE102007054851A1 MBE-Einrichtung und Verfahren zu deren Betrieb MBE device and method for its operation |
| 05/20/2009 | CN201241198Y Trinity polycrystalline silicon directional crystallization furnace |