| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/21/2009 | EP2016209A2 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate |
| 01/21/2009 | EP2016205A2 Semiconductor buffer structures |
| 01/21/2009 | EP1087040B1 Method for producing silicon single crystal |
| 01/21/2009 | CN201183850Y Guard board of polycrystalline silicon casting furnace copple |
| 01/21/2009 | CN201183849Y Thermal field structure of polycrystalline silicon casting furnace having graphitic cooling block heat preservation strips |
| 01/21/2009 | CN201183848Y Thermal field structure of polycrystalline silicon casting furnace having five layers of heat preservation strips |
| 01/21/2009 | CN201183847Y Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip |
| 01/21/2009 | CN201183846Y Thermal field structure of polycrystalline silicon casting furnace |
| 01/21/2009 | CN101351580A Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| 01/21/2009 | CN101351579A Method for growing III nitride single crystal |
| 01/21/2009 | CN101350333A GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate |
| 01/21/2009 | CN101348942A Method for preparing single crystal hollow NiO octahedron |
| 01/21/2009 | CN101348941A Substrate material for mercury cadmium telluride material growth by liquid phase epitaxy method and preparation thereof |
| 01/21/2009 | CN101348940A Improved Bridgman-Stockbarger method for compound semiconductor GaAs single crystal |
| 01/21/2009 | CN101348939A Growth method improving gallium arsenide single crystal utilization ratio |
| 01/21/2009 | CN101348938A Preparation of nano barium titanate powder |
| 01/21/2009 | CN101348937A Preparation of high length-diameter ratio magnesium hydroxide sulfate hydrate whisker |
| 01/21/2009 | CN101348936A Orientational alignment carbon nano-tube and carbon coating cobalt nano-particle complex and preparation thereof |
| 01/21/2009 | CN101348931A Method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition |
| 01/21/2009 | CN100454488C Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 01/21/2009 | CN100454487C Method of manufacturing GaN crystal substrate |
| 01/21/2009 | CN100453713C Preparation method of organic macromolecule nano-tube |
| 01/21/2009 | CN100453712C III-V nitride semiconductor substrate and its production method |
| 01/21/2009 | CN100453711C Zn0 crystallite material, and preparation method |
| 01/21/2009 | CN100453710C Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 01/21/2009 | CN100453709C Method for developing monocrystal of potassium dihydrogen phosphate in large aperture rapidly |
| 01/21/2009 | CN100453707C Method for preparing diameter different monocrystal bismuth nanowire microarray by using uniform hole diameter alumina template |
| 01/20/2009 | US7479658 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers |
| 01/20/2009 | US7479637 Scintillator crystals, method for making same, use thereof |
| 01/20/2009 | US7479188 Process for producing GaN substrate |
| 01/20/2009 | US7479186 Systems and methods for mixing reactants |
| 01/17/2009 | CA2633964A1 Method of manufacturing solar-grade polysilicon ingot with relevant induction apparatus |
| 01/15/2009 | WO2009008368A1 Method for producing bismuth germanate crystal and radiation detector |
| 01/15/2009 | WO2008141971A3 Inverse colloidal crystals |
| 01/15/2009 | WO2008134568A3 Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase |
| 01/15/2009 | DE112007000578T5 Verfahren zur Herstellung eines Substrats eines Nitridhalbleiters der Gruppe III-V A process for preparing a substrate of a nitride semiconductor of Group III-V |
| 01/14/2009 | EP2014803A1 Device for manufacturing a block of a crystalline material with modulation of its thermal conductivity |
| 01/14/2009 | EP2014802A1 Method of manufacturing plates of a semi-conductor material by directed crystallisation and moulding |
| 01/14/2009 | EP1639158A4 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 01/14/2009 | CN201180090Y Water cooled electrode bar of novel polysilicon reduction furnace |
| 01/14/2009 | CN201180089Y Water cooling double-layer glass viewing mirror of novel polysilicon reduction furnace |
| 01/14/2009 | CN101345221A Gan substrate, substrate with an epitaxial layer, semiconductor device, and gan substrate manufacturing method |
| 01/14/2009 | CN101343778A Process for producing golden nano stick with short length-diameter ratio |
| 01/14/2009 | CN101343776A Chemical vapor deposition preparation apparatus method for oxide |
| 01/14/2009 | CN101343774A Preparation of hydrophobic nature nano boric acid copper crystal whisker with in situ one-step method |
| 01/14/2009 | CN101343773A Preparation of hydrophobic nature calcium sulphate crystal whisker with liquid phase method of sodium sulfate wastewater in situ |
| 01/14/2009 | CN100452449C Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 01/14/2009 | CN100452407C SOI wafer and production method therefor |
| 01/14/2009 | CN100451185C Method for synthesizing magnetic nano crystal material from nematode |
| 01/14/2009 | CN100451184C Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 01/14/2009 | CN100451183C Method for synthesizing laser crystal emerald jewel by cosolvent method |
| 01/14/2009 | CN100451182C Production of non-metallic material calcium-sulfate whiskers |
| 01/14/2009 | CN100451181C Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| 01/14/2009 | CN100451180C Method for growing ZnO mono-crystalline by closed pipe chemical vapour transmission |
| 01/13/2009 | US7476895 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 01/08/2009 | WO2009004791A1 Single crystal scintillator material and method for producing the same |
| 01/08/2009 | WO2009003714A2 Device and method for measuring static and dynamic scattered light in small volumes |
| 01/07/2009 | EP2012373A1 Coated conductor with simplified layer architecture |
| 01/07/2009 | EP2011905A1 Method for measuring distance between reference reflector and melt surface, method for control the position of melt surface using same, and silicon single crystal producing apparatus |
| 01/07/2009 | EP2011640A1 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same |
| 01/07/2009 | EP1138063B1 Fabrication of gallium nitride layers by lateral growth |
| 01/07/2009 | EP1087041B1 Production method for silicon wafer and silicon wafer |
| 01/07/2009 | CN201176468Y Rotary positioning apparatus of seed crystal tray |
| 01/07/2009 | CN101341228A Single-source precursor for semiconductor nanocrystals |
| 01/07/2009 | CN101340058A Nitride semiconductor stacked structure and semiconductor optical device, and methods for manufacturing the same |
| 01/07/2009 | CN101339926A Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate |
| 01/07/2009 | CN101338453A Growth device of large size non-core YAG series laser crystal and growth process thereof |
| 01/07/2009 | CN101338452A High-density carbon nanotube array and method for preparing same |
| 01/07/2009 | CN101338448A Hydrothermal preparation method for aluminum oxide whiskers at low temperature |
| 01/06/2009 | US7473925 P-type group II-VI semiconductor compounds |
| 01/06/2009 | US7473316 Method of growing nitrogenous semiconductor crystal materials |
| 01/06/2009 | CA2352132C Method of producing a single crystal gan substrate and single crystal gan substrate |
| 01/02/2009 | DE102007028293A1 Plasmareaktor und Verfahren zur Herstellung einkristalliner Diamantschichten A plasma reactor and method for producing single-crystal diamond films |
| 01/01/2009 | US20090004458 Diffusion Control in Heavily Doped Substrates |
| 01/01/2009 | US20090004090 pressure difference between both sides of the reactor tube is maintained within a predetermined range, the fluidized bed reactor can be operated with long-term stability even at high pressures, satisfying various conditions required for preparing polycrystalline silicon based on fluidized bed process |
| 01/01/2009 | US20090001329 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 01/01/2009 | US20090000540 Liquid-phase growth apparatus and method |
| 12/31/2008 | WO2009003079A2 Systems and methods for fabricating crystalline thin structures using meniscal growth techniques |
| 12/31/2008 | WO2009001919A1 Zno substrate and method for processing zno substrate |
| 12/31/2008 | WO2009001833A1 Epitaxial wafer and method for manufacturing the same |
| 12/31/2008 | EP2009672A1 Conductive isostructural compounds |
| 12/31/2008 | EP2009148A1 Group iii-v nitride layer and method for producing the same |
| 12/31/2008 | EP2009135A1 Base substrate for epitaxial diamond film, method for manufacturing the base substrate for epitaxial diamond film, epitaxial diamond film manufactured by the base substrate for epitaxial diamond film, and method for manufacturing the epitaxial diamond film |
| 12/31/2008 | EP2008297A1 Epitaxial growth of iii-nitride compound semiconductors structures |
| 12/31/2008 | EP2007933A1 Methods for controllable doping of aluminum nitride bulk crystals |
| 12/31/2008 | EP1281196A4 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
| 12/31/2008 | CN201172701Y Heat treatment equipment for gallium arsenide single crystal open pipe |
| 12/31/2008 | CN101336314A Process for growth of low dislocation density gan |
| 12/31/2008 | CN101333685A Three-chamber continuous whisker-generating vacuum furnace for continuously preparing silicon carbide whisker |
| 12/31/2008 | CN101333684A Indium-and-yttrium-codoped strontium titanate material and its preparation method |
| 12/31/2008 | CN101333683A Novel infrared non-linear crystal CsV2O5 |
| 12/31/2008 | CN101333682A Substrate material for preparing low-temperature phase barium metaborate single crystal film |
| 12/31/2008 | CN101333681A Polysilicon casting furnace and control method |
| 12/31/2008 | CN101333678A Control pipeline for distributing and evaluating supply system of trichlorosilane or silicon tetrachloride |
| 12/31/2008 | CN100448097C Nonaqueous electrolyte battery, lithium-titanium composite oxide, battery pack and vehicle |
| 12/31/2008 | CN100448048C Piezoelectric single crystal element and method for fabricating the same |
| 12/31/2008 | CN100448042C Nitride-based semiconductor substrate and method of making the same |
| 12/31/2008 | CN100447951C Nitride semiconductor free-standing substrate and nitride semiconductor light emitting device |
| 12/31/2008 | CN100447948C Growth method of nitride semiconductor epitaxial layers |
| 12/31/2008 | CN100447311C Method for developing crystal of protein |