Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2010
03/04/2010WO2010024230A1 METHOD FOR MANUFACTURING AlGaAs SUPPORT SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL WAFER, METHOD FOR MANUFACTURING LED, AlGaAs SUPPORT SUBSTRATE, EPITAXIAL WAFER, AND LED
03/04/2010WO2010023937A1 Crystal manufacturing apparatus, semiconductor device manufactured using same, and method for manufacturing semiconductor device using same
03/04/2010WO2010023846A1 Semiconductor substrate and method for manufacturing the same
03/04/2010WO2010023516A1 Uv absorption based monitor and control of chloride gas stream
03/03/2010EP2159828A2 Silicon wafer and method for producing the same
03/03/2010EP2159827A2 Silicon wafer and method for producing the same
03/03/2010CN201416045Y Autoclave heating system for growing artificial crystal by a hydro-thermal method
03/03/2010CN101661910A Gallium nitride semiconductor substrate and blue luminescent device
03/03/2010CN101660207A Method for synthesizing gallium phosphide polycrystal
03/03/2010CN101660206A Preparation method of integral GaN-based film
03/03/2010CN101660205A Laser crystal of sodium tungstate with waveband of 2 microns
03/03/2010CN101660204A Preparation method of hexagonal piece aluminum oxide whisker material
03/03/2010CN101660203A Preparation method of anatase single crystal TiO2 with large active surface
03/03/2010CN101660202A Method for preparing ceramic-based three-dimensional photonic crystals with photo-curing direct molding
03/03/2010CN101659409A High purity carbonaceous material and ceramic coated high purity carbonaceous material
03/02/2010US7670933 method of nanowire-templated lateral epitaxial growth employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition as templates for lateral growth and coalescence of virtually crack-free films
03/02/2010US7670435 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
03/02/2010US7670429 High throughput screening of crystallization of materials
02/2010
02/25/2010WO2010021967A1 Controlling transport of gas borne contaminants across a ribbon surface
02/25/2010WO2010021272A1 Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot
02/25/2010WO2010020224A2 Method for producing a material containing zinc oxide and a semiconductor element with a material containing zinc oxide
02/25/2010WO2010020054A1 Photonic crystal device
02/25/2010US20100044584 Carbon nanotube containing materials and articles containing such materials for altering electromagnetic radiation
02/25/2010US20100043859 Composite Comprising Array of Needle-Like Crystal, Method for Producing the Same, Photovoltaic Conversion Element, Light Emitting Element, and Capacitor
02/25/2010CA2734739A1 Photonic crystal device
02/24/2010EP2155933A2 Method for producing sic single crystal
02/24/2010EP2155923A1 Method and device for preparing a multilayered coating on a substrate
02/24/2010CN201411510Y Birdcage-structured resistance heating element of single crystal furnace for growth of big size sapphire
02/24/2010CN201411509Y Single crystal furnace body for growth of big sapphire with size over 300 mm
02/24/2010CN201411507Y Crucible for preparing orientation-determined pure metal single crystal
02/24/2010CN101657570A Expandable graphite sheet, method for protecting carbonaceous crucible using the expandable graphite sheet, and single crystal pulling apparatus
02/24/2010CN101654808A Neodymium-doped tungstic acid gadolinium lithium laser crystal, preparation method and use thereof
02/24/2010CN101654807A Tombarthite and ytterbium ion activation garnet scintillation crystal containing lutetium, yttrium and aluminum and preparation method thereof
02/24/2010CN101654806A Method for preparing crystal whisker of zinc oxide in large size
02/24/2010CN100591810C Low-temperature hydrothermal method for manufacturing zinc oxide nanocrystalline whisker
02/23/2010US7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
02/23/2010US7666799 Epitaxial growth of relaxed silicon germanium layers
02/23/2010US7666791 Systems and methods for nanowire growth and harvesting
02/18/2010WO2010017634A1 Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals
02/18/2010US20100038637 Composite Comprising Array of Needle-Like Crystal, Method for Producing the Same, Photovoltaic Conversion Element, Light Emitting Element, and Capacitor
02/18/2010CA2733643A1 Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals
02/17/2010EP2154712A1 Method for preparing a partially or fully semi-insulating or P-doped ZnO substrate, substrates obtained, and electronic, electro-optical or optoelectronic devices comprising same.
02/17/2010EP2154273A1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal
02/17/2010EP2154272A1 Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device
02/17/2010EP2154271A1 Method and apparatus for growing III-nitride-bulk crystals
02/17/2010EP2154270A2 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
02/17/2010EP2152943A1 Apparatus for crystal growth
02/17/2010CN201406482Y Metallic heater for growing big size vanadic acid illinium crystals by top seed crystal soaking growing method
02/17/2010CN201406481Y Silicon single crystal furnace crystal-bar bracket
02/17/2010CN101652505A Polycrystalline thin film and method for producing the same and oxide superconductor
02/17/2010CN101649491A Method for directionally growing SiC monocrystal nanowire array
02/17/2010CN101649490A Method for finely regulating monocrystal SiC low-dimensional nanostructure
02/17/2010CN101649489A Raw material synthesis method for growing yttrium vanadate crystal through pulling method
02/17/2010CN101649488A Synthesizing method for growing terbium gallium garnet crystal by pulling method
02/16/2010US7662706 Nanostructures formed of branched nanowhiskers and methods of producing the same
02/16/2010US7662427 organic films can be chemical vapor deposited on all surfaces of the substrate provided with the scintillator, and the substrate can easily be taken up from the turntable after the organic films of polyxylene are deposited; waterproof coating
02/11/2010WO2010017389A1 Generating a pumping force in a silicon melt by applying a time-varying magnetic field
02/11/2010WO2010017232A1 Process for large-scale ammonothermal manufacturing of gallium nitride boules
02/11/2010WO2010016586A1 Method for manufacturing semiconductor wafer
02/11/2010WO2010016257A1 Sharpened diamond needle, cantilever using the same for scanning-probe microscope, photomask-correcting probe, and electron beam source
02/11/2010WO2010015824A1 Surface functionalised nanoparticles
02/11/2010WO2010015296A2 Transmitting optical element consisting of magnesium-aluminium spinel
02/11/2010US20100035412 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
02/11/2010US20100035410 Method for Manufacturing InGaN
02/11/2010US20100035082 Internal gear pump
02/11/2010DE112008000491T5 Dotierungsmittel-Injektionsverfahren und Dotierungsvorrichtung Dopant injection method and device doping
02/11/2010CA2733443A1 Surface functionalised nanoparticles
02/10/2010EP2151292A1 Strategically placed large grains in superalloy casting to improve weldability
02/10/2010EP2150640A1 Nanocrystalline alloys of the fe3al(ru) type and use thereof optionally in nanocrystalline form for making electrodes for sodium chlorate synthesis
02/10/2010EP2150491A2 Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase
02/10/2010EP1412563B1 Method of preparation of colloidal nanocrystals in non-coordinating solvents
02/10/2010CN201400727Y Hook-shaped electromagnetic field device for growth of silicon single crystal
02/10/2010CN101646809A Process for producing zinc oxide single-crystal
02/10/2010CN101643938A Method for preparing submicron grade square pipe-shaped Sb2Se3
02/10/2010CN101643937A Growth method of bismuth silicate monocrystal with hydrothermal method
02/10/2010CN101643936A Horizontal growth method for lead tungstate scintillation crystal
02/10/2010CN101643935A 2mum-waveband K (Yb/Tm) W laser crystal
02/10/2010CN101643934A Bi-doped halide laser crystal and preparation method thereof
02/10/2010CN100588758C Preparation for sodium titanate crystal whisker
02/09/2010US7659190 Method for producing a Group III-V compound semiconductor
02/09/2010CA2560998C Single crystals and methods for fabricating same
02/09/2010CA2455851C High performance lithium titanium spinel l14t15012 for electrode material
02/04/2010WO2010014261A2 Polycrystalline complex-shaped mesoscale components
02/04/2010WO2010013607A1 Perovskite phosphor film
02/04/2010DE112008000877T5 Einkristall-Zuchtverfahren und Ziehvorrichtung für Einkristalle Single-crystal growth method and device for pulling single crystals
02/04/2010DE112007002987T5 System und Verfahren zur Ausbildung eines Kristalls System and method for forming a crystal
02/03/2010EP2149627A1 Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same
02/03/2010CN201395648Y Thermal field for growing silicon single crystal
02/03/2010CN201395647Y Heat apparatus for growing silicon single crystal
02/03/2010CN201395640Y Lower furnace body structure of mono-crystal furnace
02/03/2010CN100587135C Method for preparing Ni3Al-based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method
02/03/2010CN100587134C Method for preparing Ni3Al based single-crystal high-temperature alloy by employing seed crystal
02/03/2010CN100587133C Method for preparing Ni based single-crystal high-temperature alloy by employing seed crystal
02/03/2010CN100587132C Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate
02/03/2010CN100587131C Process for preparing lead tungstate-doped crystal
02/03/2010CN100587130C Process for preparing lead tungstate crystal
02/03/2010CN100587129C Growing method for large scale CuI crystal
02/02/2010US7655960 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same
02/02/2010US7655601 Enhanced melt-textured growth
02/02/2010US7655491 P-type Group III nitride semiconductor and production method thereof