| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/23/2009 | DE112005000735B4 Siliciumelektrodenplatte für ein Plasmaätzen mit überlegener Haltbarkeit Silicon electrode plate for plasma etching with superior durability |
| 04/22/2009 | EP2051288A1 GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD |
| 04/22/2009 | EP2051286A1 Semiconductor manufacturing apparatus |
| 04/22/2009 | EP2050842A1 Method of producing ultra-thin ferrite films |
| 04/22/2009 | EP1756337B1 A melter assembly for charging a crystal forming apparatus with molten source material |
| 04/22/2009 | EP1324946B1 Ultracoarse, monorystalline tungsten carbide and method for producing the same, and hard metal produced therefrom |
| 04/22/2009 | EP1193332B1 Method for producing silicon single crystal |
| 04/22/2009 | EP1039990A4 Fluorine-doped diamond-like coatings |
| 04/22/2009 | CN201224781Y Directional solidification polycrystalline silicon casting furnace with complementary charging device |
| 04/22/2009 | CN201224780Y Quartz wafer |
| 04/22/2009 | CN201224777Y Large size sapphire falling crucible method growth furnace |
| 04/22/2009 | CN101415868A Method for manufacturing semiconductor crystal and semiconductor substrate |
| 04/22/2009 | CN101415867A Method and apparatus for manufacturing group III nitride compound semiconductor |
| 04/22/2009 | CN101415866A Method for manufacturing epitaxial wafer |
| 04/22/2009 | CN101415864A Large aluminum nitride crystals with reduced defects and methods of making them |
| 04/22/2009 | CN101413142A Annealing method for lithium aluminate crystal |
| 04/22/2009 | CN101413141A Method for growing ZnO nano-wire array on flexible substrate |
| 04/22/2009 | CN100481331C Process for producing doped semiconductor wafers from silicon, and the semiconductor wafers produced thereby |
| 04/22/2009 | CN100481328C Flexible single-crystal film and method of manufacturing the same |
| 04/22/2009 | CN100481326C Method for manufacturing compound substrate of semiconductor |
| 04/22/2009 | CN100480439C Method for preparing TiO2 nano material by direct current deposition method using anode aluminum oxide as template |
| 04/22/2009 | CN100480438C Monocrystal AIN nano chain |
| 04/22/2009 | CN100480437C Method for preparing oriented growth dielectric-constant adjustable strontium lead titanate film |
| 04/22/2009 | CN100480436C Preparing method for Zr:LiNbO3 crystal |
| 04/22/2009 | CN100480435C Method for preparing barium calcium columbate column-like monocrystal particles |
| 04/21/2009 | US7521282 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/21/2009 | US7521034 3C-SiC nanowhisker |
| 04/21/2009 | US7520930 Silicon carbide single crystal and a method for its production |
| 04/16/2009 | WO2009048056A1 Compound semiconductor epitaxial wafer and process for producing the same |
| 04/16/2009 | WO2009047894A1 Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate |
| 04/16/2009 | WO2009014957A3 Methods for manufacturing cast silicon from seed crystals |
| 04/16/2009 | WO2008133653A3 Method for growing a crystalline composition comprising gallium nitride |
| 04/16/2009 | WO2008127220A3 Methods for in-situ generation of reactive etch and growth specie in film formation processes |
| 04/16/2009 | DE112007001378T5 Verfahren zur Bestimmung von Faktoren der COP-Erzeugung für einen Siliciumeinkristallwafer A method for the determination of factors of the COP for producing a silicon single crystal wafer |
| 04/16/2009 | DE112007001361T5 Verfahren zur Durchführung einer Cop-Evaluierung an einem Siliciumwafer A method for carrying out a cop-evaluation on a silicon wafer |
| 04/16/2009 | DE102004010676B4 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer |
| 04/15/2009 | EP2048696A2 Process for manufacturing silicon wafers for solar cell |
| 04/15/2009 | EP2048267A1 Process for producing single-crystal substrate with off angle |
| 04/15/2009 | EP2047014A1 Method and device for producing classified high-purity polycrystalline silicon fragments |
| 04/15/2009 | EP1831436B1 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
| 04/15/2009 | CN201220975Y Apparatus for preparing high purity polysilicon |
| 04/15/2009 | CN101410950A Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
| 04/15/2009 | CN101410558A Apparatus for producing group III nitride based compound semiconductor |
| 04/15/2009 | CN101410557A Semiconductor substrate, electronic device, optical device, and production methods therefor |
| 04/15/2009 | CN101410549A Microwave plasma CVD system |
| 04/15/2009 | CN101409424A Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof |
| 04/15/2009 | CN101407939A Halide laser crystal doped with Bi and preparing method thereof |
| 04/15/2009 | CN101407938A Method for preparing crystal form-controllable yttrium fluoride natrium nanocrystalline under normal temperature |
| 04/15/2009 | CN101407936A Method and apparatus for growing semiconductor crystals and crystal product and device support method |
| 04/15/2009 | CN100479221C Method for preparing tin-oxide mono-crystal film |
| 04/14/2009 | US7518292 Piezoelectric single crystal and piezoelectric single-crystal device and method for manufacturing the same |
| 04/14/2009 | US7518151 Gallium nitride/sapphire thin film having reduced bending deformation |
| 04/14/2009 | US7517720 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/14/2009 | US7517557 Oxide films, a method of producing the same and structures having the same |
| 04/14/2009 | US7517516 High purity carbonaceous material and ceramic coated high purity carbonaceous material |
| 04/14/2009 | CA2374337C Tellurium-containing nanocrystalline materials |
| 04/09/2009 | WO2009045177A1 Methods of forming a nanocrystal |
| 04/09/2009 | WO2009044882A1 Isotope diamond laminate |
| 04/09/2009 | WO2009044651A1 Process for charging liquefied ammonia, process for production of nitride crystals, and reactor for growth of nitride crystals |
| 04/09/2009 | WO2009044639A1 Method for growing group iii nitride crystal |
| 04/09/2009 | WO2009044638A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
| 04/09/2009 | WO2009043639A1 Material comprising finely layered heterostructures of oxide materials |
| 04/09/2009 | WO2006091448A3 Chemical vapor deposition reactor having multiple inlets |
| 04/09/2009 | WO2004042784A3 Stabilized semiconductor nanocrystals |
| 04/09/2009 | DE102004040053B4 Verfahren zur Herstellung eines Siliciumeinkristalls A process for producing a silicon single |
| 04/09/2009 | CA2672177A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
| 04/08/2009 | EP2045838A1 Method for producing zinc oxide semiconductor crystal |
| 04/08/2009 | EP2045835A1 Method for reducing dislocation in group iii nitride crystal and substrate for epitaxial growth |
| 04/08/2009 | EP2045374A2 Method of manufacturing a GaN substrate and a GaN epitaxial wafer |
| 04/08/2009 | EP2045372A2 Method for growing silicon ingot |
| 04/08/2009 | EP2045371A2 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot |
| 04/08/2009 | EP2044245A1 Piezoelectric substance, piezoelectric element, and liquid discharge head and liquid discharge apparatus using piezoelectric element |
| 04/08/2009 | EP2044244A1 Method of manufacturing substrates having improved carrier lifetimes |
| 04/08/2009 | CN201217713Y Graphite for polysilicon |
| 04/08/2009 | CN201217712Y Polysilicon directional long crystal thermal field structure |
| 04/08/2009 | CN101405440A Process for producing nitride single-crystal and apparatus therefor |
| 04/08/2009 | CN101405439A Apparatus for producing nitride single crystal |
| 04/08/2009 | CN101405438A Apparatus for producing nitride single crystal |
| 04/08/2009 | CN101405437A Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 04/08/2009 | CN101404248A GaN single-crystal substrate and method for producing GaN single crystal |
| 04/08/2009 | CN101403139A Preparation method for bismuth telluride based sintered fuel |
| 04/08/2009 | CN101403138A Oxide nanocrystalline synthesis |
| 04/08/2009 | CN101403137A Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot |
| 04/08/2009 | CN101402861A Phosphate upconversion luminescent nanocrystalline capable of emitting red light or green light and method of producing the same |
| 04/08/2009 | CN100477089C Crystal growing method for single-crystal gallium nitride |
| 04/08/2009 | CN100476047C Method for synthesizing single crystal beta Si3N4 nano wire using nano silicon-wire as template |
| 04/08/2009 | CN100476046C Aluminum oxide porous one-dimensional nano material and method for making same and usage |
| 04/07/2009 | US7514372 Epitaxial growth of relaxed silicon germanium layers |
| 04/07/2009 | US7514342 Method and apparatus for forming deposited film |
| 04/07/2009 | US7514146 Single crystal MgO substrate, an iridium film heteroepitaxially grown on the substrate, and a diamond film vapor-deposited on the Ir film, especially by microwave chemical vapor deposition; delamination-proof |
| 04/07/2009 | US7513949 Method and apparatus for producing semiconductor device |
| 04/07/2009 | CA2432213C Silicon production process |
| 04/02/2009 | WO2009041685A1 Quartz glass crucible for pulling silicon single crystal and method for manufacturing the crucible |
| 04/02/2009 | WO2009041631A1 Zno semiconductor and zno semiconductor element |
| 04/02/2009 | WO2009041053A1 Process for producing group iii element nitride crystal and apparatus for producing group iii element nitride crystal |
| 04/02/2009 | WO2009040580A1 Non-polar iii-v nitride semiconductor and growth method |
| 04/02/2009 | WO2009040579A1 Non-polar iii-v nitride material and production method |
| 04/02/2009 | WO2004069409A3 Automated sample analysis system and method |
| 04/02/2009 | US20090084669 Process and apparatus for producing a single crystal of semiconductor material |
| 04/02/2009 | US20090084288 Vapor deposition using amine containing organosilicon compound; integrated circuits; disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups |