| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/02/2009 | WO2009081523A1 Single-crystal manufacturing apparatus and manufacturing method |
| 07/02/2009 | US20090165702 Self-coated single crystal, and production apparatus and process therefor |
| 07/02/2009 | DE112007000313T5 Verfahren zum Aufwachsenlassen von Halbleiter-Heterostrukturen auf der Basis von Galliumnitrid A method for growing of semiconductor heterostructures on the basis of gallium nitride |
| 07/01/2009 | EP2075357A2 Apparatus for producing single crystal silicon |
| 07/01/2009 | EP2075356A1 Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
| 07/01/2009 | EP2075355A2 Inner crystallization crucible and pulling method using the crucible |
| 07/01/2009 | EP2075354A2 Vitreous silica crucible for pulling single-crystal silicon |
| 07/01/2009 | EP2074245A1 Process for producing a silicon carbide substrate for microelectronic applications |
| 07/01/2009 | EP2074244A2 Crystal growth method and reactor design |
| 07/01/2009 | EP2074060A1 Process and apparatus for purifying low-grade silicon material |
| 07/01/2009 | EP1812335A4 Production of core/shell semiconductor nanocrystals in aqueous solutions |
| 07/01/2009 | EP1603652B1 Hydrodynamic cavitation crystallization process |
| 07/01/2009 | CN201265052Y Control device for single crystal electrofusion aluminum oxide crystal grain |
| 07/01/2009 | CN101473075A Method for growing A1xGa1-xN crystal, and A1xGa1-xN crystal substrate |
| 07/01/2009 | CN101473074A Method of manufacturing a silicon carbide single crystal |
| 07/01/2009 | CN101469452A Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
| 07/01/2009 | CN101469451A Epitaxial method for nitrifier material |
| 07/01/2009 | CN101469450A Series erbium-ytterbium borate laser crystal Er1-xYbxBa3B9O18 (0<x<1), and preparation and use thereof |
| 07/01/2009 | CN101469449A Method for preparing potassium titanium oxide phosphate crystal by liquid phase coprecipitation sythesis of growth material |
| 07/01/2009 | CN101469448A Method for growth of large size high quality zinc oxide single crystal thick film on sapphire |
| 07/01/2009 | CN101469447A Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon |
| 07/01/2009 | CN100508220C Serial tellurium-cadmium-mercury infrared material and preparation method thereof |
| 07/01/2009 | CN100507095C Dipping type silicon-piece making method |
| 07/01/2009 | CN100507094C Hydrothermal method for preparing zinc - oxalate of monocrstalline ZnO Nano line |
| 06/30/2009 | US7553694 Methods of forming a high conductivity diamond film and structures formed thereby |
| 06/30/2009 | US7553466 Narrow particle size distribution; decomposition of an organosilicon compound in vapor phase |
| 06/30/2009 | US7553368 Process for manufacturing a gallium rich gallium nitride film |
| 06/25/2009 | WO2009020430A3 Method of forming a cadmium containing nanocrystal |
| 06/25/2009 | WO2005084231A3 Germanium deposition |
| 06/25/2009 | US20090160026 Nitride semiconductor free-standing substrate and method for making same |
| 06/25/2009 | DE60320191T2 Ferromagnetischer Raumtemperatur-Halbleiter und Plasma unterstützte Molekularstrahlepitaxie wie Verfahren zu seiner Herstellung Room temperature ferromagnetic semiconductor and plasma-assisted molecular beam epitaxy as method for its preparation |
| 06/25/2009 | DE102007061977A1 Preparing semiconductor particles, useful e.g. to prepare wafers, comprises thermally treating semiconductor raw material, where the formation of the particles takes place by directional solidification process, and surface treating |
| 06/25/2009 | CA2646139A1 Method for growing group iii nitride semiconductor crystal and growing device for group iii nitride semiconductor crystal |
| 06/24/2009 | EP2072646A1 Process for producing single crystal of silicon carbide |
| 06/24/2009 | EP2072645A2 Method for producing a monocrystalline or polycrystalline semiconductor material |
| 06/24/2009 | CN101466878A III-th family nitride single crystal and growth method thereof |
| 06/24/2009 | CN101466877A Solid-phase sheet growing substrate and solid-phase sheet manufacturing method |
| 06/24/2009 | CN101466876A Single-crystal silicon wafer COP evaluation method |
| 06/24/2009 | CN101463499A Method for growing InAsxSb1-x film on gallium antimonide substrate |
| 06/24/2009 | CN101463498A Reduction reaction furnace for polysilicon |
| 06/24/2009 | CN100503902C Method for preparing samarium-barium-copper-oxygen single-orientation superconductive block |
| 06/24/2009 | CN100503901C Process for producing aluminum oxide crystal whisker |
| 06/23/2009 | US7550042 Method and apparatus for crystallization |
| 06/18/2009 | WO2009076621A1 High resolution structures of acidic mammalian chitinases and uses thereof |
| 06/18/2009 | WO2009075935A1 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
| 06/18/2009 | WO2009075361A1 Method for producing ca-la-f-based light-transparent ceramic, ca-la-f-based light-transparent ceramic, optical member, optical system, and composition for ceramic formation |
| 06/18/2009 | WO2009075321A1 MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE |
| 06/18/2009 | WO2009075288A1 Silicon substrate and method for manufacturing the same |
| 06/18/2009 | WO2009075257A1 Silicon substrate and method for manufacturing the same |
| 06/18/2009 | WO2009074742A2 Method for producing alcohol esters from triglycerides and alcohols using heterogeneous catalysts containing a hybrid solid with an organic-inorganic mixed matrix |
| 06/18/2009 | US20090155987 Method of fabricating gallium nitride substrate |
| 06/18/2009 | US20090155986 Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 06/18/2009 | DE112007001605T5 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben The same p-type zinc oxide thin film and method of forming |
| 06/18/2009 | DE102008062040A1 Epitaxiewafer und Verfahren zu dessen Herstellung Epitaxial wafers and process for its preparation |
| 06/17/2009 | EP2071125A1 Single crystal turbine blade |
| 06/17/2009 | EP2071062A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
| 06/17/2009 | EP2071061A1 Seed crystal fixing device |
| 06/17/2009 | EP2071059A1 High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot |
| 06/17/2009 | EP2071058A1 Crystallisation method |
| 06/17/2009 | EP2071053A1 Filming method for iii-group nitride semiconductor laminated structure |
| 06/17/2009 | EP2070873A1 Alpha-alumina powder |
| 06/17/2009 | EP2070871A1 Process for production of multicrystal silicon and facility for production of multicrystal silicon |
| 06/17/2009 | EP2069238A1 Process for the production of si by reduction of sihc13 with liquid zn |
| 06/17/2009 | EP1668356B1 Method for controlling the treatment of a crystal by means of a liquid |
| 06/17/2009 | CN101460665A Method of judging cop occurrence cause for single crystal silicon wafer |
| 06/17/2009 | CN101459215A Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 06/17/2009 | CN101457403A Green synthetic method of controllable dimension semi-conductor nano cluster and nanocrystalline |
| 06/17/2009 | CN101457402A Method for preparing erbium doped Na2Gd4(MoO4)7 laser crystal |
| 06/17/2009 | CN101457401A Method for preparing neodymium doped Na2Gd4(MoO4)7 laser crystal |
| 06/17/2009 | CN101457400A Method for preparing neodymium doped Na2La4(MoO4)7 laser crystal |
| 06/17/2009 | CN101457399A Erbium sodium ion double doped strontium molybdate laser crystal and preparation method thereof |
| 06/17/2009 | CN101457398A Ytterbium sodium ion double doped strontium molybdate laser crystal and preparation method thereof |
| 06/17/2009 | CN101457397A Self-active laser crystal erbium calcium vanadate and preparation method thereof |
| 06/17/2009 | CN101457396A Zinc oxide nano awl and preparation method thereof |
| 06/17/2009 | CN100502073C Precursor solutions and methods of using same |
| 06/17/2009 | CN100500953C Cerium vanadate crystal material of scintillating crystal |
| 06/17/2009 | CN100500952C Method for synthesizing magnesium borate whisker by using bittern |
| 06/17/2009 | CN100500951C Device and method for high-speed growth of diamond single-crystal |
| 06/16/2009 | US7547367 alloying a metal alloy containing nickel, manganese and gallium; forming the large crystal structure of the shape memory metal alloy and has a directional in a desired way |
| 06/16/2009 | US7547359 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 06/16/2009 | US7547358 System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism |
| 06/12/2009 | CA2647257A1 Rectangular parallelepiped maltitol |
| 06/11/2009 | WO2009072631A1 Method for manufacturing nitride semiconductor element, and nitride semiconductor element |
| 06/11/2009 | WO2009072378A1 Aln crystal and method for growing the same |
| 06/11/2009 | WO2009072254A1 Group iii nitride crystal, method for growing the group iii nitride crystal, and apparatus for growing crystal |
| 06/11/2009 | US20090148982 Method of Manufacturing Compound Semiconductor Devices |
| 06/11/2009 | US20090148976 Method for fabricating semiconductor epitaxial layers using metal islands |
| 06/11/2009 | US20090146566 Plasma display panel and method for manufacturing the same |
| 06/11/2009 | CA2675124A1 A1n crystal and method of its growth |
| 06/10/2009 | EP2068348A1 Conductive isostructural compounds |
| 06/10/2009 | EP2067884A1 III Nitride crystal substrate, and light-emitting device and method of its manufacture |
| 06/10/2009 | EP2067883A2 Vitreous silica crucible |
| 06/10/2009 | EP2066496A2 Equipment for high volume manufacture of group iii-v semiconductor materials |
| 06/10/2009 | DE10247017B4 SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist SiC single crystal, methods for producing an SiC single crystal, SiC wafer with an epitaxial film and method for manufacturing a SiC wafer having an epitaxial film |
| 06/10/2009 | CN201254620Y Continuous polysilicon purification crystallization furnace |
| 06/10/2009 | CN101454487A Methods for controllable doping of aluminum nitride bulk crystals |
| 06/10/2009 | CN101452894A Gaas semiconductor substrate , group III-v compound semiconductor device and method of manufacturing the same |
| 06/10/2009 | CN101451272A Silicon nitride production method capable of reducing cavity formation probability in metal front medium layer |
| 06/10/2009 | CN101451271A Apparatus for producing zonal polycrystalline silicon by edge limited silicon film growth method |
| 06/10/2009 | CN101451270A Large scale preparation of noble metal nano wire |